Journal of the Korean Crystal Growth and Crystal Technology (한국결정성장학회지)

The Korea Association of Crystal Growth (한국결정성장학회)
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Effect of surface roughness on the quality of silicon epitaxial film grown after UV-irradiated gas phase cleaning

  • Kwon, Sung-Ku (Department of Chemical engineering and Process Analysis Laboratory Korea Advanced Institute of Science and Technology) ;
  • Kim, Du-Hyun (Department of Chemical engineering and Process Analysis Laboratory Korea Advanced Institute of Science and Technology)
  • Published : 1999.10.01
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Abstract

In-situ cleaning and subsequent silicon epitaxial film growth were performed in a load-locked reactor equipped with Hg-grid UV lamp and PBN heater to obtain the smooth and contaminant-free underlying surface and develop low-temperature epitaxial film growth process. The removals of organic and native oxide were investigated using UV-excited $O_2$ and $NF_{3}/H_{2}$, and the effect of the surface condition was examined on the quality of silicon epitaxial film grown at temperature as low as $750^{\circ}C$. UV-excited gas phase cleaning was found to be effective in removing the organic and native oxide successfully providing a smooth surface with RMS roughness of 0.5$\AA$ at optimal condition. Crystalline quality of epitaxial film was determined by smoothness of cleaned surface and the presence of native oxide and impurity. Crystalline defects such as dislocation loops or voids due to the surface roughness were observed by XTEM.

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