• 전기의세계
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• 제20권2호
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• pp.9-14
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• 1971

N type single crystal CdTe is grown by doping Gallium as 0.01 percent, by using zone melting method. And also p type CdTe is grown by doping Ag, Sb, and Te as 0.01%. Resistivity and Concentration of the n.p type single crystal are measured. And then Li ions are implanted on the n type CdTe by high voltage accellerator with different amount of impurity. Indium is evaporated on the p type in high vacuum condition. These sample are heated so as to make P-N Junction in Argon gas flow. Electrical properties for solar cell are investigated. Photovoltage and current are found to be varyed according to following factor: 1) amount of impurity 2) diffusion thickness 3) temperature and time for making P-N junction. Efficiency of the P-N Junction evaporated Indium is 6.5 when it is heated at 380.deg. C for 15 minutie.

• 반도체디스플레이기술학회지
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• 제4권3호
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• pp.23-27
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• 2005

The effects of the base vacuum level on a plasma display panel (PDP) produced by the vacuum in-line sealing technology were investigated. The main equipment of the vacuum in-line sealing process consists of the sealing chamber, pumping systems for evacuating, mass flow controller for introducing the plasma gases, and other measuring systems. During the sealing process, the impurity gases were fully evacuated and the panel was prevented from the adsorption of impurity gases. As a result, the brightness increased as the impurity gas density decreased, so we found that the vacuum in-line sealing process was more efficient technology an the conventional sealing process.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1999년도 춘계학술발표강연 및 눈문개요집
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• pp.48-48
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• 1999

• 한국전기전자재료학회논문지
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• 제19권12호
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• pp.1078-1084
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• 2006

Impurity contamination induced by $CF_4\;and\;HBr/Cl_2/O_2$ plasma etching on Si surface was examined by using surface spectroscopes. XPS(x-ray photoelectron spectroscopy) surface analysis showed that F of 0.4 at % exists in the surface layer in the form of Si-F bonding but Br and Cl are below the detection limit $(0.1{\sim}1.0%)$ of the spectroscope. Static-SIMS(secondary ion mass spectrometry) surface analysis showed that the etched Si surface was contaminated with etching gas elements such as H, F, Cl and Br, and they existed to the depth of about $20{\sim}40nm$. The etched Si surface was treated with three different methods that were HF dip, thermal oxidation followed by HF dip and oxygen-plasma oxidation followed by HF dip. They showed an effect in reducing the impurity contamination and the oxygen-plasma oxidation followed by HF dipping method appears to be a little bit more effective.

• 공업화학
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• 제32권3호
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• pp.290-298
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• 2021

천연 흑연의 음극재 적용을 위하여 정제 공정을 실시하였으며, 공정에 따른 흑연의 구조적 변화와 불순물 함량이 음극 특성에 미치는 영향을 고찰하였다. 천연 흑연은 불화암모늄과 황산을 동일 비로 하여 사용량을 달리한 산처리 및 온도(800~2500 ℃)를 달리한 열처리를 통하여 화학적/물리적으로 정제되었다. 산을 이용한 불순물 제거는 한계가 있었으며, 이후 진행된 2500 ℃까지의 열처리를 통해 Si과 같은 일부 원소를 제외하고 대부분의 불순물이 전량 제거되는 것을 확인하였다. 복합 정제 공정에 따라 제조된 흑연 음극재의 특성이 향상되었으며, 구조와 불순물 함량 변화는 각각 용량 및 속도 특성과 초기 쿨롱 효율에 지배적인 영향을 미쳤다. 복합 정제 공정은 흑연 구조를 향상시켰으며, 불순물을 효율적으로 제거하여 SEI층 형성 억제 및 Li⁺ 삽입 공간 확대를 통해 리튬 이온 전지의 성능을 향상시켰다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.362-362
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• 2009

$MgB_2$ bulk samples were sintered at different ambient. In this work, high purity Ar gas was added with oxygen and hydrogen gas, which can be regarded as impurity in a sense, as a possible dopant in the $MgB_2$. It was found that oxygen in the sintering ambient leads to a decrease in the critical current density $J_c$ at self field and lower fields. However, we can obtained higher $J_c$ at higher fields. It was also noted that $MgB_2$ samples sintered with 5% hydrogen in Ar revealed the increased $J_c$ at all fields compared to those processed in pure Ar ambient. From the XRD and FESEM analysis, the impurity gas in Ar can refine the $MgB_2$ grain size and result in increased grain. boundary, which can act as a strong flux pinning sites in $MgB_2$ samples. Also discussed are the effects of sintering ambient on irreversibility field, $H_{irr}$ and the upper critical field, $H_{C2}$.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 1996년도 추계학술대회 논문집
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• pp.313-317
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• 1996

This work deals with description of gas purifing system to product high pure helium gas using low temperature absorption. The system controls temperature of heaters, open/close of solenoid valves and levels of liquid nitrogen to purify a raw gas and continuously products purified gas with perfoming alternatively purification and regeneration. We develop the monitoring and control program to monitor the gas purification process on real-time and control the process time with checking the impurities in purified gas. From the result of system operation, the developed monitoring and control system continuously products high pure helium gas with reducing impurities in raw gas to permitted limits(less than 0.01 ~ 0.05 ppm)

• 한국응용과학기술학회지
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• 제29권4호
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• pp.594-598
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• 2012

고분자 전해질막 연료전지는 연료극의 연료와 공기극의 공기에 각각 $H_2S$와 $SO_2$이 포함되어 있을 때 그 성능이 심각하게 감소한다. 본 연구는 고분자전해질막 연료전지의 공기극과 연료극에 1 ppm에서 10 ppm의 불순물 가스를 공급하여 전기적 성능측정을 통해 복합적인 황불순물이 단위전지에 미치는 영향을 확인하였다. 최적의 운전조건에서 불순물가스를 피독하였을 때 $SO_2$와 $H_2S$의 농도가 증가할수록 성능이 급격히 감소하였다(단위전지 온도 $65^{\circ}C$, 상대습도 100%). 그리고 황의 흡착은 MEA의 백금 촉매층 표면서 일어나며, 불순물 가스가 MEA에 누적되는 것을 확인하였다. 1, 3, 5, 및 10 ppm 4회의 연속적인 피독 후 연료전지의 성능이 0.71 V에서 0.54 V(76 %)로 감소하였다.

• Korean Chemical Engineering Research
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• 제54권6호
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• pp.838-846
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• 2016

산업체에서 많이 사용되는 연소공정은 배가스 성분의 회수나 제거를 필요로 한다. 최근에는 배가스로부터 이산화탄소를 회수하기 위해 제올라이트 13X를 사용하는 MBA(이동상흡착) 공정이 개발되었다. 본 연구에서는 제올라이트 13X에 대한 이산화탄소, 질소, 이산화황 및 수증기의 흡착 실험을 수행하여 흡착평형 및 고체입자 안으로의 흡착속도를 조사하였다. 여러 실험온도에서의 흡착데이터를 Langmuir, Toth, Freundlich 등온흡착식에 적용하여 각 흡착등온식의 파라미터를 구했고, 이론식에 의한 예측값과 실험데이터가 잘 일치함을 확인하였다. 이산화황과 수증기가 불순물로 존재할 경우에 주성분인 이산화탄소의 흡착량을 측정하였다. 이성분 흡착 데이터는 순수 성분에 대해 얻어진 파라미터를 extended Langmuir 등온흡착식에 적용하여 예측한 결과와 잘 일치하였다. 다만, $H_2O$ 불순물이 대략 ${\sim}10^{-5}H_2O\;mol/g$ zeolite 13X 이하 존재할 때에는 $CO_2$ 흡착량이 순수 $CO_2$의 흡착보다 오히려 소량 증가하는 현상이 관찰되었다. 실험으로 측정한 흡착속도를 구형 입자 확산모델에 적용하여 이산화탄소, 이산화황, 질소, 수분의 확산계수와 활성화에너지를 구했다. 미량의 불순물이 흡착되어있을 때는 이산화탄소나 이산화황의 확산계수가 줄어들었다. 본 연구에서 얻어진 파라미터 값들은 실제 흡착공정의 설계에 유용할 것이다.

• 한국세라믹학회지
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• 제48권5호
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• pp.426-432
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• 2011

The oxidation behavior of CVD ${\beta}$-SiC was investigated for Very High Temperature Gas-Cooled Reactor (VHTR) applications. This study focused on the surface analysis of the oxidized CVD ${\beta}$-SiC to observe the effect of impurity gases on active/passive oxidation. Oxidation test was carried out at $950^{\circ}C$ in the impurity-controlled helium environment that contained $H_2$, $H_2O$, CO, and $CH_4$ in order to simulate VHTR coolant chemistry. For 250 h of exposure to the helium, weight changes were barely measurable when $H_2O$ in the bulk gas was carefully controlled between 0.02 and 0.1 Pa. Surface morphology also did not change based on AFM observation. However, XPS analysis results indicated that a very small amount of $SiO_2$ was formed by the reaction of SiC with $H_2O$ at the initial stage of oxidation when $H_2O$ partial pressure in the CVD ${\beta}$-SiC surface placed on the passive oxidation region. As the oxidation progressed, $H_2O$ consumed and its partial pressure in the surface decreased to the active/passive oxidation transition region. At the steady state, more oxidation did not observable up to 250 h of exposure.