• 제목/요약/키워드: Impurity concentration

검색결과 156건 처리시간 0.018초

수평 구조의 MOS-controlled Thyristor에서 채널 길이 및 불순물 농도에 의한 Anode 전류 특성 (Characteristics of Anode Current due to the Impurity Concentration and the Channel Length of Lateral MOS-controlled Thyristor)

  • 정태웅;오정근;이기영;주병권;김남수
    • 한국전기전자재료학회논문지
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    • 제17권10호
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    • pp.1034-1040
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    • 2004
  • The latch-up current and switching characteristics of MOS-Controlled Thyristor(MCT) are studied with variation of the channel length and impurity concentration. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator is used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of impurity concentration. The channel length and impurity concentration of the proposed MCT power device show the strong affect on the anode current and turn-off time. The increase of impurity concentration in P and N channels is found to give the increase of latch-up current and forward voltage-drop.

A study on the effect of material impurity concentration on radioactive waste levels for plans for decommissioning of nuclear power plant

  • Gilyong Cha;Minhye Lee;Soonyoung Kim;Minchul Kim;Hyunmin Kim
    • Nuclear Engineering and Technology
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    • 제55권7호
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    • pp.2489-2497
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    • 2023
  • Co and Eu impurities in the SSCs are nuclides that dominantly influence the neutron-induced radioactive inventory in metal and concrete radwastes (radioactive wastes) during NPP decommission. The impurity concentrations provided by NUREG/CR-3474 were used for the practical range of Co and Eu impurity concentrations to be applied to the code calculations. Metal structures near the core were evaluated to be ILW (intermediate-level waste) for the whole range of Co impurity concentration, so the boundary line between ILW and LLW (low-level waste) has no change for the whole concentration range provided by NUREG/CR-3474. Also, the boundary line between VLLW (very low-level waste) and CW (clearance waste) in the concrete shield could alter a little depending on the Eu impurity concentration within the range provided by NUREG/CR-3474. From this work, it is found that the concentration of material impurities of SSCs gives no critical impact on determining radwaste levels.

수평 구조의 MOS-controlled Thyristor에서 채널에서의 길이 및 불순물 농도에 의한 스위칭 특성 (Switching Characteristics due to the Impurity Concentration and the Channel Length in Lateral MOS-controlled Thyristor)

  • 김남수;최지원;이기영;주병권;정태웅
    • 한국전기전자재료학회논문지
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    • 제18권1호
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    • pp.17-23
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    • 2005
  • The switching characteristics of MOS-Controlled Thyristor(MCT) is studied with variation of the channel length and impurity concentration in ON and OFF FET channel. The proposed MCT power device has the lateral structure and P-epitaxial layer in substrate. Two dimensional MEDICI simulator and PSPICE simulator are used to study the latch-up current and forward voltage-drop from the characteristics of I-V and the switching characteristics with variation of channel length and impurity concentration in P and N channel. The channel length and N impurity concentration of the proposed MCT power device show the strong affect on the transient characteristics of current and power. The N channel length affects only on the OFF characteristics of power and anode current, while the N doping concentration in P channel affects on the ON and OFF characteristics.

γ -valley에서 산란의 종류에 따른 전자의 홀 인수 (Hall Factor of Electrons in γ -valley due to Various Scatterings)

  • 서헌교;박일수;전상국
    • 한국전기전자재료학회논문지
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    • 제15권8호
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    • pp.658-663
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    • 2002
  • Hall factor of electrons in $\Gamma$-valley is calculated as functions of temperature, impurity concentration, and nonparabolicity of conduction valleys by taking into account the current density obtained from the Boltzmann transport equation. The dependence of the Hall factor on the temperature is clearly shown in the case of the optical phonon scattering and that on the impurity concentration is obvious in the case of the ionized impurity scattering. As the nonparabolicity of the conduction band increases, the Hall factor due to the acoustic or optic phonon scattering increases, whereas that due to the ionized impurity scattering decreases. The change of the Hall factor can be analysed in terms of the dispersion of relaxation time.

실리콘 표면처리에 있어서 이온교환 막에 의한 금속불순물의 제거공정 (Removal Process of Metallic Impurity for Silicon Surface Detergent by Ion Exchange)

  • 연영흠;최성옥;정환경;남기대
    • 한국응용과학기술학회지
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    • 제16권1호
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    • pp.75-81
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    • 1999
  • HF purification performance of an ion exchange membrane(IEM) was evaluated with 0.5% HF spiked with 10ppb of Fe, Ni and Cu nitrates. The result show that after less than five turnovers through an IEM, the metallic impurity concentration drops below 1ppb. The decrease rate can be fitted to a model assuming the experimental tanks to be continuously stirred tank reaction and that the metallic impurity concentration after the IEM is a function of the single-pass purification efficiency of the membrane, the concentration before purification and the metals desorbed form the IEM. The Concentration after purification was investigated up to a cumulative Fe loading of 300ppb in the 23 liter recirculated loop. It increases linearly vs. cumulative loading and can be explained by the Langmuir theory resulting in a purification efficiency at the equilibrium of close to 99.5% in this loading regime.

Boron Detection Technique in Silicon Thin Film Using Dynamic Time of Flight Secondary Ion Mass Spectrometry

  • Hossion, M. Abul;Arora, Brij M.
    • Mass Spectrometry Letters
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    • 제12권1호
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    • pp.26-30
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    • 2021
  • The impurity concentration is a crucial parameter for semiconductor thin films. Evaluating the impurity distribution in silicon thin film is another challenge. In this study, we have investigated the doping concentration of boron in silicon thin film using time of flight secondary ion mass spectrometry in dynamic mode of operation. Boron doped silicon film was grown on i) p-type silicon wafer and ii) borosilicate glass using hot wire chemical vapor deposition technique for possible applications in optoelectronic devices. Using well-tuned SIMS measurement recipe, we have detected the boron counts 101~104 along with the silicon matrix element. The secondary ion beam sputtering area, sputtering duration and mass analyser analysing duration were used as key variables for the tuning of the recipe. The quantitative analysis of counts to concentration conversion was done following standard relative sensitivity factor. The concentration of boron in silicon was determined 1017~1021 atoms/㎤. The technique will be useful for evaluating distributions of various dopants (arsenic, phosphorous, bismuth etc.) in silicon thin film efficiently.

경수로 구조재 내 불순물 조성 및 함량이 중성자 방사화 핵종 재고량에 미치는 영향 분석 (The Effects of Impurity Composition and Concentration in Reactor Structure Material on Neutron Activation Inventory in Pressurized Water Reactor)

  • 차길용;김순영;이재민;김용수
    • 방사성폐기물학회지
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    • 제14권2호
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    • pp.91-100
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    • 2016
  • 경수로 원전을 대상으로 원전 내 방사화 대상 물질인 스테인리스강, 탄소강 및 콘크리트의 불순물 정보 적용여부에 따른 방사화 핵종 재고량을 계산하였다. 본 연구에서 탄소강은 압력용기 물질에 사용되었고, 스테인리스강은 압력용기 내부 물질에 사용되었으며, 일반 콘크리트가 생체 차폐체에 사용되었다. 금속 물질에 대해서는 참고자료 1개의 불순물 함량 정보를 적용하였고, 콘크리트 물질에서는 참고자료 5개의 불순물 함량 정보를 적용하여 평가를 수행하였다. 방사화 핵종 재고량 전산해석 시 중성자속 계산에는 MCNP 전산코드를, 방사화 계산에는 FISPACT 전산코드를 각각 사용하였다. 계산 결과, 금속 물질에서 불순물을 포함한 경우가 그렇지 않은 경우보다 비방사능이 2배 이상 높았으며, 특히 콘크리트에서는 불순물을 포함한 경우가 그렇지 않은 경우보다 최대 30배 이상 비방사능이 높게 계산되었다. 방사화 핵종의 생성반응과 재고량을 분석한 결과, 금속 구조물에서는 불순물 중 Co원소와 중성자에 의해 생성되는 방사화 핵종인 Co-60이, 콘크리트에서는 불순물 중 Co, Eu 원소와 중성자에 의해 생성되는 방사화 핵종인Co-60, Eu-152, Eu-154 이 방사성폐기물 준위 결정에 큰 영향을 미치고 있음을 확인하였다. 본 연구의 결과는 원전 해체 계획 수립 시 방사화 핵종 재고량 평가 및 규제에 활용될 수 있을 뿐 아니라, 해체를 고려한 원전 또는 원자력시설의 설계 단계에서도 참고자료로 활용 될 것으로 판단된다.

Evaluation of Effects of Impurities in Nuclear Fuel and Assembly Hardware on Radiation Source Term and Shielding

  • Taekyung Lee;Dongjin Lee;Kwangsoon Choi;Hyeongjoon Yun
    • 방사성폐기물학회지
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    • 제21권2호
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    • pp.193-204
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    • 2023
  • To ensure radiological safety margin in the transport and storage of spent nuclear fuel, it is crucial to perform source term and shielding analyses in advance from the perspective of conservation. When performing source term analysis on UO2 fuel, which is mostly used in commercial nuclear power plants, uranium and oxygen are basically considered to be the initial materials of the new fuel. However, the presence of impurities in the fuel and structural materials of the fuel assembly may influence the source term and shielding analyses. The impurities could be radioactive materials or the stable materials that are activated by irradiation during reactor power operation. As measuring the impurity concentration levels in the fuel and structural materials can be challenging, publicly available information on impurity concentration levels is used as a reference in this evaluation. To assess the effect of impurities, the results of the source term and shielding analyses were compared depending on whether the assumed impurity concentration is considered. For the shielding analysis, generic cask design data developed by KEPCO-E&C was utilized.

이차이온 질량분석기를 이용한 탄탈 박막내의 불순물 분석 (Impurity analysis of Ta films using secondary ion mass spectrometry)

  • 임재원;배준우
    • 한국진공학회지
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    • 제13권1호
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    • pp.22-28
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    • 2004
  • 본 논문은 탄탈 박막의 증착시 음의 기판 바이어스에 의한 탄탈 박막내의 불순물 농도변화에 대해서 고찰하였다. 탄탈 박막은 실리콘 기판 위에 이온빔 증착장비를 이용하여 기판 바이어스를 걸지 않은 경우와 -125 V의 기판 바이어스를 건 상태에서 증착하였다. 탄탈 박막내의 불순물 농도를 관찰하기 위해서 이차이온 질량분석기(secondary ion mass spectrometry)를 이용하였다. 세슘 클러스터 이온에 의한 깊이분석에서, -125 V의 기판 바이어스를 걸어줌으로써 산소, 탄소, 그리고 실리콘 불순물의 농도가 기판 바이어스를 걸지 않은 경우에 비해 상당히 감소한 것을 알 수 있었다. 또한, 세슘 이온빔과 산소 이온빔을 이용한 전체 불순물의 농도분포에서도, 음의 기판 바이어스가 박막 증착시 각각의 불순물 농도에 영향을 준다는 결과를 얻었고 이에 대한 고찰을 하였다.