• Title/Summary/Keyword: Implanted antenna

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Design of Implantable CPW Fed Monopole Antenna for ISM Band Applications

  • Kumar, S. Ashok;Shanmuganantham, T.
    • Transactions on Electrical and Electronic Materials
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    • v.15 no.2
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    • pp.55-59
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    • 2014
  • An implantable CPW fed monopole antenna embedded into human tissue is proposed for ISM band biomedical applications. The proposed antenna is made compatible for implantation by embedding it in an alumina ceramic substrate (${\Box}_r=9.8$ and thickness=0.65 mm). The proposed antenna covers the ISM band of 2.45 GHz. The radiation parameters, such as return loss, E-Plane, H-Plane, are measured and analyzed, using the method of moments. The proposed antenna has substantial merits over other implanted antennas, like low profile, miniaturization, lower return loss, and better impedance matching and high gain.

Design and Performances of Implantable CPW Fed Apollian Shaped Antenna at 2.45 GHz ISM Band for Biomedical Applications

  • Kumar, S. Ashok;Sankar, J. Navin;Dileepan, D.;Shanmuganantham, T.
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.5
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    • pp.250-253
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    • 2015
  • A novel implantable CPW fed Apollian shaped antenna embedded into human tissue is proposed for ISM band biomedical applications. The proposed antenna is made compatible for implantation by embedding it in an alumina ceramic substrate(εr=9.8 and thickness= 0.65 mm). The proposed antenna covers the ISM band of 2.45 GHz. The radiation parameters such as return loss, xy-plane, xz-plane, and yz-plane etc., are measured and analyzed using the agilent vector network analyzer. The proposed antenna has substantial advantages, including low profile, miniaturization ability, lower return loss, better impedance matching, and high gain over conventional implanted antennas.

A Triple Band Deep-Tissue Antenna for Biomedical Implants (심부 조직 인체 삽입용 세 가지 밴드 안테나)

  • Yoo, Hyoungsuk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.66 no.2
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    • pp.383-386
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    • 2017
  • In this study, we introduce a triple-band flexible implantable antenna that is tuned by using a ground slot in three specific bands, namely Medical Implanted Communication Service (MICS: 402-405 MHz) for telemetry, the midfield band (lower gigahertz: 1.45-1.6 GHz) for Wireless Power Transfer (WPT), and the Industrial, Scientific and Medical band (ISM: 2.4-2.45 GHz) for power conservation. This antenna is wrapped inside a printed 3D capsule prototype to show its applicability in different implantable or ingestible devices. The telemetry performance of the proposed antenna was simulated and measured by using a porcine heart. From the simulation and measurement, we found that use of a ground slot in the implantable antenna can improve the antenna performance and can also reduce the Specific Absorption Rate (SAR).

L-Slot Microstrip Patch Antenna Design for LTE (LTE용 L형 슬롯 마이크로스트립 패치 안테나 설계)

  • Kwon, Jin-Young;Kim, Gab-Gi
    • The Journal of the Institute of Internet, Broadcasting and Communication
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    • v.13 no.3
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    • pp.171-175
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    • 2013
  • In this paper was The dielectric constant of 4.4 and thickness of 0.6mm FR-4 substrate were implanted including the L-Slot in microstrip patch antenna to design a microstrip patch antenna for LTE. The proposed antenna is $180{\times}180$ compact and $46{\times}36$ lightweight compared to existing antenna and This antenna can be used as transmission ommidirectional radiation pattern of propagation was compared to the input return loss than -10dB (VSWR 2:1) to allow communication from the resonant frequency band.

POLYMER SURFACE MODIFICATION WITH PLASMA SOURCE ION IMPLANTATION TECHNIQUE

  • Han, Seung-Hee;Lee, Yeon-Hee;Lee, Jung-Hye;Yoon, Jung-Hyeon;Kim, Hai-Dong;Kim, Gon-ho;Kim, GunWoo
    • Journal of the Korean institute of surface engineering
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    • v.29 no.5
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    • pp.345-349
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    • 1996
  • The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

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Plasma source ion implantations for shallow $p^+$/n junction

  • Jeonghee Cho;Seuunghee Han;Lee, Yeonhee;Kim, Lk-Kyung;Kim, Gon-Ho;Kim, Young-Woo;Hyuneui Lim;Moojin Suh
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.180-180
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    • 2000
  • Plasma source ion implantation is a new doping technique for the formation of shallow junction with the merits of high dose rate, low-cost and minimal wafer charging damage. In plasma source ion implantation process, the wafer is placed directly in the plasma of the appropriate dopant ions. Negative pulse bias is applied to the wafer, causing the dopant ions to be accelerated toward the wafer and implanted below the surface. In this work, inductively couples plasma was generated by anodized Al antenna that was located inside the vacuum chamber. The outside wall of Al chamber was surrounded by Nd-Fe-B permanent magnets to confine the plasma and to enhance the uniformity. Before implantation, the wafer was pre-sputtered using DC bias of 300B in Ar plasma in order to eliminate the native oxide. After cleaning, B2H6 (5%)/H2 plasma and negative pulse bias of -1kV to 5 kV were used to form shallow p+/n junction at the boron dose of 1$\times$1015 to 5$\times$1016 #/cm2. The as-implanted samples were annealed at 90$0^{\circ}C$, 95$0^{\circ}C$ and 100$0^{\circ}C$during various annealing time with rapid thermal process. After annealing, the sheet resistance and the junction depth were measured with four point probe and secondary ion mass spectroscopy, respectively. The doping uniformity was also investigated. In addition, the electrical characteristics were measured for Schottky diode with a current-voltage meter.

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The Method for 3-D Localization of Implantable Miniaturized Telemetry Module by Analysis of Nonlinear Differential Equations (비선형 연립방정식에 의한 체내 삽입형 초소형 텔레메트리 모듈의 3차원 위치추적 방법)

  • Park, J.C.;Nam, H.W.;Park, H.J.;Song, B.S.;Won, C.H.;Lee, S.H.;Choi, H.C.;Cho, J.H.
    • Journal of Sensor Science and Technology
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    • v.12 no.6
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    • pp.249-257
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    • 2003
  • The bio-telemetry technologies, that use the wireless miniaturized telemetry module implanted in the human body and transmits several biomedical signal from inside to outside of the body, have been expected to solve the problem such as the patient's inconvenience and the limit for diagnosis. In the case of transceiver system using the wireless RF transmission method, the method of three-dimensional localization for implantable miniaturized telemetry module is necessary to detect the exact position of disease. A new method for three-dimensional localization using small loop antenna in the implantable miniaturized telemetry module was proposed in this paper. We proposed a method that can accurately determine the position of telemetry module by analyzing the differences in the strength of signal, which is received at each of the small size RF receiver array installed on the body surface.

Hard TiN Coating by Magnetron-ICP P $I^3$D

  • Nikiforov, S.A.;Kim, G.H.;Rim, G.H.;Urm, K.W.;Lee, S.H.
    • Journal of the Korean institute of surface engineering
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    • v.34 no.5
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    • pp.414-420
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    • 2001
  • A 30-kV plasma immersion ion implantation setup (P $I^3$) has been equipped with a self-developed 6'-magnetron to perform hard coatings with enhanced adhesion by P $I^3$D(P $I^3$ assisted deposition) process. Using ICP source with immersed Ti antenna and reactive magnetron sputtering of Ti target in $N_2$/Ar ambient gas mixture, the TiN films were prepared on Si substrates at different pulse bias and ion-to-atom arrival ratio ( $J_{i}$ $J_{Me}$ ). Prior to TiN film formation the nitrogen implantation was performed followed by deposition of Ti buffer layer under A $r^{+}$ irradiation. Films grown at $J_{i}$ $J_{Me}$ =0.003 and $V_{pulse}$=-20kV showed columnar grain morphology and (200) preferred orientation while those prepared at $J_{i}$ $J_{Me}$ =0.08 and $V_{pulse}$=-5 kV had dense and eqiaxed structure with (111) and (220) main peaks. X-ray diffraction patterns revealed some amount of $Ti_{x}$ $N_{y}$ in the films. The maximum microhardness of $H_{v}$ =35 GN/ $M^2$ was at the pulse bias of -5 kV. The P $I^3$D technique was applied to enhance wear properties of commercial tools of HSS (SKH51) and WC-Co alloy (P30). The specimens were 25-kV PII nitrogen implanted to the dose 4.10$^{17}$ c $m^{-2}$ and then coated with 4-$\mu\textrm{m}$ TiN film on $Ti_{x}$ $N_{y}$ buffer layer. Wear resistance was compared by measuring weight loss under sliding test (6-mm $Al_2$ $O_3$ counter ball, 500-gf applied load). After 30000 cycles at 500 rpm the untreated P30 specimen lost 3.10$^{-4}$ g, and HSS specimens lost 9.10$^{-4}$ g after 40000 cycles while quite zero losses were demonstrated by TiN coated specimens.s.

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Implantable Flexible Sensor for Telemetrical Real-Time Blood Pressure Monitoring using Polymer/Metal Multilayer Processing Technique (폴리머/ 금속 다층 공정 기술을 이용한 실시간 혈압 모니터링을 위한 유연한 생체 삽입형 센서)

  • Lim Chang-Hyun;Kim Yong-Jun;Yoon Young-Ro;Yoon Hyoung-Ro;Shin Tae-Min
    • Journal of Biomedical Engineering Research
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    • v.25 no.6
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    • pp.599-604
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    • 2004
  • Implantable flexible sensor using polymer/metal multilayer processing technique for telemetrical real-time blood pressure monitoring is presented. The realized sensor is mechanically flexible, which can be less invasively implanted and attached on the outside of blood vessel to monitor the variation of blood pressure. Therefore, unlike conventional detecting methods which install sensor on the inside of vessel, the suggested monitoring method can monitor the relative blood pressure without injuring blood vessel. The major factor of sudden death of adults is a disease of artery like angina pectoris and myocardial infarction. A disease of circulatory system resulted from vessel occlusion by plaque can be preventable and treatable early through continuous blood pressure monitoring. The procedure of suggested new method for monitoring variation of blood pressure is as follows. First, integrated sensor is attached to the outer wall of blood vessel. Second, it detects mechanical contraction and expansion of blood vessel. And then, reader antenna recognizes it using telemetrical method as the relative variation of blood pressure. There are not any active devices in the sensor system; therefore, the transmission of energy and signal depends on the principle of mutual inductance between internal antenna of LC resonator and external antenna of reader. To confirm the feasibility of the sensing mechanism, in vitro experiment using silicone rubber tubing and blood is practiced. First of all, pressure is applied to the silicone tubing which is filled by blood. Then the shift of resonant frequency with the change of applied pressure is measured. The frequency of 2.4 MHz is varied while the applied pressure is changed from 0 to 213.3 kPa. Therefore, the sensitivity of implantable blood pressure is 11.25 kHz/kPa.