• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.333-333
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• 2013

The poor conductivity of poly (3,4-ethylene dioxythiophene): poly (styrenesulfonate) (PEDOT:PSS) film hinders to use for a flexible electrode in solar cells. In this report we demonstrate that the conductivity of PEDOT:PSS film can be enhanced by modifying structures in a mixture of PEDOT: PSS aqueous solution and various organic solvents such as polar protic (2-propanol, methanol, ethanol, formic acid) and aprotic solvents (acetone and acetonitrile). To comparatively study the structural effects on the resulted electrical properties, the films are spin-coated on glasses and ITO. At the same time, a contact angle goniometer is used for clarifying a mechanism of wettability of PEDOT (hydrophobic) and PSS (hydrophilic) on the observed conductivity. The structures and electrical properties are investigated by FE-SEM (Field Emission Scanning Electron Microscopy), AFM (Atomic Force Microscopy), and 4-point probe, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.28-28
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• 2009

Fabrications of antireflection structures on solar cell were investigated to trap the light and to improve quantum efficiency. Introductions of patterned substrate or textured layer for Si solar cell were performed to prevent reflectance and to increase the path length of incoming light. However, it is difficult to deposit conformally flat electrode on perpendicular plane. ZnO is II-VI compound semiconductor and well-known wide band-gap material. It has similar electrical and optical properties as ITO, but it is nontoxic and stable. In this study, Al-doped ZnO thin films are deposited as transparent electrode by atomic layer deposition method to coat on Si substrate with micro-scale structures. The deposited AZO layer is flatted on horizontal plane as well as perpendicular one with conformal 200 nm thickness. The carrier concentration, mobility and resistivity of deposited AZO thin film on glass substrate were measured $1.4\times10^{20}cm^{-3}$, $93.3cm^2/Vs$, $4.732\times10^{-4}{\Omega}cm$ with high transmittance over 80%. The AZO films were coated with polyimide and performed selective polyimide stripping on head of column by reactive ion etching to measure resistance along columns surface. Current between the micro-columns flows onto the perpendicular plane of deposited AZO film with low resistance.

• Journal of the Microelectronics and Packaging Society
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• v.9 no.1
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• pp.9-13
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• 2002

Recently, Organic electroluminescent devices (OELDs) have been demonstrated the medium sized full color display with effective multi-layer thin films. In this study, the multi-layer OELDs were prepared on the patterened ITO (indium tin oxide)/glass substrates by the vacuum thermal evaporation method. The low molecule compounds such as $Alq_3$(trim-(8-hydroxyquinoline)aluminum) and CTM (carrier transfer material) as the electron transport and injection layers as well as TPD (triphenyl-diamine) and CuPc (copper phthalocyanine) as the hole transport and injection layers were used. The luminance was rapidly increased above the threshold voltage of 10 V. The luminance and emission spectrum for the OELDs samples with $A1/CTM/Alq_3$/TPD/1TO structures were found to be 430 cd/$m^2$and 512 nm at 17 V showing green color emission. In contrast, the samples with $Li-A1/Alq_3$/TPD/CuPC/1TO multi-structures showed 508 nm in emission spectrum and 650 cd/$m^2$at 17 V in the luminance. The increment of luminance may be ascribed to the improved efficiency of recombination in the region of the emission layers by the deposition of CuPc as hole injection layer and the low work function of the Li-Al electrode compared to the Al electrode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.64 no.9
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• pp.1323-1329
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• 2015

The WO₃/Ag/WO₃ transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O₂ plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO₃ film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m² at 5mTorr, it shows the hydrophobic property with lower process pressure. O₂ plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

• Journal of the Korean Electrochemical Society
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• v.17 no.4
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• pp.209-215
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• 2014

We report on the electrocatalytic activities at Pt nanostructure surfaces electrodeposited with different deposition charges on indium tin oxide electrodes for oxygen reduction and methanol oxidation reactions. The surface properties of Pt nanostructures depending on deposition charges were characterized by scanning electron microscopy, electrochemical surface area measurement, X-ray diffraction, and CO stripping analysis, which were correlated to the electrocatalytic activities. Pt nanostructures with deposition charge of 0.03 C exhibited the highest electrocatalytic activity for oxygen reduction and methanol oxidation. The sharp sites of Pt nanostructure and the presence of highly active facet play a key role, whereas the electrochemical surface area does not significantly affect the electrocatalytic activity. The results obtained in this work with regard to the dependence of electrocatalytic activity on the variation of the Pt nanostructures will give insights into the development of advanced electrocatalytic systems.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.287-287
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• 2010

We report a new direct patterning method, called liquid bridge-mediated nanotransfer molding (LB-nTM), for the formation of two- or three-dimensional structures with feature sizes between tens of nanometers and tens of micron over large areas. LB-nTM is based on the direct transfer of various materials from a mold to a substrate via a liquid bridge between them. This procedure can be adopted for automated direct printing machines that generate patterns of functional materials with a wide range of feature sizes on diverse substrates. Arrays of TIPS-PEN TFTs were fabricated on 4" polyethersulfone (PES) substrates by LB-nTM using PDMS molds. An inverted staggered structure was employed in the TFT device fabrication. A 150 nm-thick indium-tin oxide (ITO) gate electrode and a 200 nm-thick SiO2dielectric layer were formed on a PES substrate by sputter deposition. An array of TIPS-PEN patterns (thickness: 60 nm) as active channel layers was fabricated on the substrate by LB-nTM. The nominal channel length of the TIPS-PEN TFT was 10 mm, while the channel width was 135 mm. Finally, the source and drain electrodes of 200 nm-thick Ag were defined on the substrate by LB-nTM. The TIPS-PEN TFTs can endure strenuous bending and are also transparent in the visible range, and therefore potentially useful for flexible and invisible electronics.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.379-379
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• 2010

Recent technical advances in OLEDs (organic light emitting devices) requires more and more the improvement in low operation voltage, long lifetime, and high luminance efficiency. Inverted top emission OLEDs (ITOLED) appeared to overcome these problems. This evolved to operate better luminance efficiency from conventional OLEDs. First, it has large open area so to be brighter than conventional OLEDs. Also easy integration is possible with Si-based driving circuits for active matrix OLED. But, a proper buffer layer for carrier injection is needed in order to get a good performance. The buffer layer protects underlying organic materials against destructive particles during the electrode deposition and improves their charge transport efficiency by reducing the charge injection barrier. Hexaazatriphenylene-hexacarbonitrile (HAT-CN), a discoid organic molecule, has been used successfully in tandem OLEDs due to its high workfunction more than 6.1 eV. And it has the lowest unoccupied molecular orbital (LUMO) level near to Fermi level. So it plays like a strong electron acceptor. In this experiment, we measured energy level alignment and hole current density on inverted OLED structures for hole injection. The normal film structure of Al/NPB/ITO showed bad characteristics while the HAT-CN insertion between Al and NPB greatly improved hole current density. The behavior can be explained by charge generation at the HAT-CN/NPB interface and gap state formation at Al/HAT-CN interface, respectively. This result indicates that a proper organic buffer layer can be successfully utilized to enhance hole injection efficiency even with low work function Al anode.

• Transactions on Electrical and Electronic Materials
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• v.16 no.3
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• pp.124-129
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• 2015

Organic electronics are the domain in which the components and circuits are made of organic materials. This new electronics help to realize electronic and optoelectronic devices on flexible substrates. In recent years, organic materials have replaced conventional semiconductors in many electronic components such as, organic light-emitting diodes (OLEDs), organic field-effect transistors (OFETs) and organic photovoltaic (OPVs). It is well known that organic light emitting diodes (OLEDs) have many advantages in comparison with inorganic light-emitting diodes LEDs. These advantages include the low price of manufacturing, large area of electroluminescent display, uniform emission and lower the requirement for power. The aim of this paper is to model polymer LEDs and OLEDs made with small molecules for studying the electrical and optical characteristics. The purpose of this modeling process is, to obtain information about the running of OLEDs, as well as, the injection and charge transport mechanisms. The first simulation structure used in this paper is a mono layer device; typically consisting of the poly (2-methoxy-5(2'-ethyl) hexoxy-phenylenevinylene) (MEH-PPV) polymer sandwiched between an anode with a high work function, usually an indium tin oxide (ITO) substrate, and a cathode with a relatively low work function, such as Al. Electrons will then be injected from the cathode and recombine with electron holes injected from the anode, emitting light. In the second structure, we replaced MEH-PPV by tris (8-hydroxyquinolinato) aluminum (Alq₃). This simulation uses, the Poole-Frenkel -like mobility model and the Langevin bimolecular recombination model as the transport and recombination mechanism. These models are enabled in ATLAS- SILVACO. To optimize OLED performance, we propose to change some parameters in this device, such as doping concentration, thickness and electrode materials.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.5
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• pp.437-443
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• 2000

In this study several lanthanide complexes such as Eu(TTA)$_3$(Phen), Tb(ACAC)$_3$-(Cl-Phen) were synthesized and the white-light electroluminescence(EL) characteristics of their thin films were investigated where the devices having structures of anode/TPD/Tb(ACAC)$_3$(Cl-Phen)/Eu(TTA)$_3$(Phen)/Alq$_3$or Bebq$_2$/cathode and the low work function metal alloy such as Li:Al was used as the electron injecting electrode(cathode). Device structure of glass substrate/ITO/TPD(30nm)/Tb(ACAC)$_3$(Phen)(30nm)/Eu(TTA)$_3$(Phen)(6nm)/DCM doped Alq$_3$(10nm)/Alq$_3$(20nm)/Li:Al(100nm) was also fabricated and their EL characteristics were investigated where Eu(TTA)$_3$(Phen) and DCM doped Alq$_3$were used as red light-emitting materials. It was found that the turn-on voltage of the device with non-doped Alq$_3$was lower than that of the devices with doped Alq$_3$and the blue and red light emission peaks due to TPD and Eu(TTA)$_3$(Phen) with non-doped Alq$_3$were lower than those with DCM doped Alq$_3$Details on the white-light-emitting characteristics of these device structures were explained by the energy and diagrams of various materials used in these structure where the energy levels of new materials such as ionization potential(IP) and electron affinity(EA) were measured by cyclic voltametric method.

• Journal of the Semiconductor & Display Technology
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• v.5 no.3 s.16
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• pp.1-4
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• 2006

White-light-emitting ZnS:Mn, Cu, Cl phosphors with spherical shape and the size of $20\;{\mu}m$ are successfully synthesized. They have the double phases of cubic and hexagonal structures. They are applied to electroluminescent (EL) devices by silk screen method with the following structure: $electrode/BaTiO_3$ insulator layer ($50{\sim}60\;{\mu}m$)/ ZnS:Mn, Cu, Cl phosphor layer ($30{\sim}50\;{\mu}m$)/ITO glass. The EL devices are driven with the voltage of 100 V and the frequency of 400 Hz. The EL devices show the three emission peaks. The blue and green emission bands are originated from $CICu^{2+}$ transition and $ClCu^+$ transition, respectively. The yellow emission band results from $^4T^6A$ transition of $Mn^{2+}$ ion. As an increase of Cu concentrations, the blue and green emission intensities decrease whereas the yellow emission intensity increases; the quality becomes warm white. It is due to the energy transfer from the blue and green bands to the yellow band.