• Composites Research
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• 제24권6호
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• pp.12-17
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• 2011

자체-센서와 미세 작동기 응용을 위한 CNT와 ITO로 코팅된 나노복합재료의 계면접착 내구성과 전기적 특성을 평가하였다. 나노복합재료의 접착 및 계면 내구성은 반복하중 피로시험에 따른 전기저항도를 측정하여 평가하였다. CNT와 ITO의 고유 전기적 특성으로 인하여 CNT가 코팅된 PVDF 나노복합재료는 ITO가 코팅된 경우보다 다소 낮은 전기저항도를 나타내었으나, 모두 양호한 자체-감지능을 보여주었다. CNT/PVDF와 ITO/PVDF 나노복합재료 모두 계면 내구성은 양호함을 확인하였다. 정적 접촉각 시험을 통해 CNT와 ITO 그리고 PVDF간의 표면에너지, 접착일, 그리고 퍼짐계수를 평가하여 계면 내구성과 의 상호 관련성을 확인하였다. 수용액에서 CNT와 ITO로 코팅된 PVDF 시편의 최적의 작동성은 주파수와 전압을 달리하여 레이져 변위센서를 사용한 연신율 변화로 측정하였다. 작동된 두 나노복합재료들의 연신율은 주파수가 증가함에 따라 감소하며, 반면에 전압의 증가에 따라 상승하였다. 각 나노복합재료의 나노구조 및 고유의 전기적 특성으로 인하여, CNT/PVDF가 ITO/PVDF 보다 자체-감지 및 작동기로서 더 적합하다는 것을 알 수 있었다.

• 한국정보처리학회:학술대회논문집
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• 한국정보처리학회 2003년도 춘계학술발표논문집 (하)
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• pp.1841-1844
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• 2003

어떤 아웃소싱에서건 성과 측정을 못하면 관리할 수 없다. 기존의 ITO 서비스 측정 기준이 IT중심의 SLA이었다면, 본 논문에서 말하려는 ITO 서비스 측정 방법은 ITO 서비스에 대한 비즈니스측면의 가치 평가를 시도한 것이다. 기업의 성과평가를 위해 적용되는 BSC 개념을 ITO서비스에 도입하여 IT BSC체계를 확립하고, 이를 조직내 의사결정 레벨로 관리함으로써 ITO서비스 측정 지표값이 조직의 비즈니스 성과에 영향을 준다는 근거를 마련하고자 하는 것이다. 이로인해 사업목표와 연계된 ITO서비스 측정 기준을 마련함으로써, IT예산 산정의 합리적 근거를 확보할 수 있다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.254-257
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• 2008

We have investigated the effect of source/drain electrode deposition method on a performance of top gate structured ZnO TFT performance. TFT using S/D of ITO film, consisted of bi-layer which deposited by ion beam assisted sputtering at the initial stage then deposited by DC magnetron sputtering, showed better performance compared to that using S/D of ITO deposited by just DC magnetron sputtering. Two ITO films exhibited different grain shapes and these resulted in different etching properties. We also suspect that charge trapping on the glass substrate (back channel) during the ITO film deposition may influence the characteristics of top gate structured ZnO TFT.

• 대한전자공학회논문지SD
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• 제39권9호
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• pp.1-10
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• 2002

유기 발광 다이오드를 위한 indium oxide (ITO) 기판을 여러 가지로 방법으로 표면처리를 하고, 이에 따른 atomic force microscopy (AFM)에 의한 morphology의 변화와 표면에서 변화된 원소들의 조성비를 Auger electron spectroscopy (AES)분석에 의하여 조사하였다. 또한 이 기판을 사용하여 초고진공분자선 증착방법에 의하여 유기 발광다이오드를 제작하고 그 특성을 조사하였다. 그 결과 산소플라즈마으로 표면 처리한 ITO 기판 위에 제조된 organic light-emitting diode (OLED)소자의 특성이 향상되었다. 그것은 AES의 분석에 의하면 ITO 표면의 오염된 탄소가 제거되고 ITO의 일함수가 증가되어 정공이 유기물 층으로 용이하게 주입한 결과로 판단된다.

• Transactions on Electrical and Electronic Materials
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• 제10권5호
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• pp.165-168
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• 2009

Transparent and conducting ITO/Cu/ITO multilayered films were deposited by magnetron sputtering on unheated polycarbonate (PC) substrates. The thickness of the Cu intermediate film was varied from 5 to 20 nm. Changes in the microstructure and optoelectrical properties of ITO/Cu/ITO films were investigated with respect to the thickness of the Cu intermediated layer. The optoelectrical properties of the films were significantly influenced by the thickness of the Cu interlayer. The sandwich structure of ITO 50 nm/Cu 5 nm/ITO 45 nm films had a sheet resistance of $36{\Omega}$/Sq. and an optical transmittance of 67% (contain substrate) at a wavelength of 550 nm, while the ITO 50 nm/Cu 20 nm/ITO 30 nm films had a sheet resistance of $70{\Omega}$/Sq. and an optical transmittance of 36%. The electrical and optical properties of ITO/Cu/ITO films were determined mainly by the Cu film properties. From the figure of merit, it is concluded that the ITO/Cu/ITO films with a 5 nm Cu interlayer showed the better performance in transparent conducting electrode applications than the conventional ITO films.

• Transactions on Electrical and Electronic Materials
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• 제14권5호
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• pp.242-245
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• 2013

Sn-doped $In_2O_3$ (ITO) thin films were prepared by radio frequency magnetron sputtering without intentional substrate heating on bare glass and $TiO_2$-deposited glass substrates to investigate the effect of a $TiO_2$ buffer layer on the electrical and optical properties of ITO films. The thicknesses of $TiO_2$ and ITO films were kept constant at 5 and 100 nm, respectively. As-deposited ITO single layer films show an optical transmittance of 75.9%, while $ITO/TiO_2$ bi-layered films show a lower transmittance of 76.1%. However, as-deposited $ITO/TiO_2$ films show a lower resistivity ($9.87{\times}10^{-4}{\Omega}cm$) than that of ITO single layer films. In addition, the work function of the ITO film is affected by the $TiO_2$ buffer layer, with the $ITO/TiO_2$ films having a higher work-function (5.0 eV) than that of the ITO single layer films. The experimental results indicate that a 5-nm-thick $TiO_2$ buffer layer on the $ITO/TiO_2$ films results in better performance than conventional ITO single layer films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권6호
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• pp.261-266
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• 2003

We investigated the effect of oxygen plasma treatment of indium-tin oxide(ITO) surface on the performance of electroluminescence(EL) devices. ITO surface treated oxygen plasma has been analyzed using atomic force microscope(AFM) and X-ray photoelectron spectroscopy(XPS), to investigate the relations between the properties of the ITO surface and the properties of the current-voltage-luminance(I-V-L) characteristics of the fabricated OLED with the structure of ITO(plasma treatment) / TPD / Alq$_3$/ Al. It is found that the oxygen plasma treatment of ITO anode improve the hole injection of the OLED due to the modification of the surface states. The treated ITO anode nay be low voltage with high luminance efficiency.

• 센서학회지
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• 제31권2호
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• pp.90-95
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• 2022

The effect of the structure of an ITO nanoparticle film sensor on its performance was studied. A printed ITO film (P-ITO film) was fabricated on a flexible polyethylene terephthalate (PET) substrate, and the contact resistance of the electrode and sensor response change were clarified according to the detection position. The contact resistance between Ag and P-ITO was observed to be -204.4 Ω using the transmission line method (TLM), confirming that a very good ohmic contact is possible. In addition, we confirmed that the contact position of the analyte had a significant influence on the response of the sensor. Based on these results, the performance of the four types of sensors was compared. Consequently, we observed that 1) optimizing the resistance of the printed film, 2) optimizing the electrode structure and analyte input position, and 3) optimizing the electrode area are very important for fabricating a metal oxide nanoparticle (MONP) sensor with optimal performance.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1421-1423
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• 1996

In this study, the effect of solar cell cover glass on the solar cell performance is evaluated. Silicon solar cell (active area:4*6cm, efficiency:12.6% at AMO condition) is used for this study. ITO(Indium tin Oxide) film thickness of the ITO/AR/substrate glass/solar cell structure samples are $40{\AA}$, $60{\AA}$, $160{\AA}$, $240{\AA}$ respectively. The solar cell maximum output power on the stacking structure variations showed 465mW in the AR/ITO/substrate glass/solar cell, and minimum output power showed 403mW in the AR/substrate glass/solar cell. The maximum output power of the solar cell on the ITO thickness variations of the ITO/AR/substrate glass/solar cell showed 460mW at $40{\AA}$ then decrease output power as ITO thickness increase. For environment tests, all samples are exposed UV light in the vacuum chanber. The output power degradation of AR(UVR)/substrate glass/solar cell stacking structure is small compared with ITO/AR(UVR)/substrate glass/solar cell stacking structure.

• 전자공학회논문지D
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• 제34D권9호
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• pp.50-55
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• 1997

In order to improve the electrical performance of ITO/InP solar cells, sulfur passivation technique was employed using (N $H_{4}$)$_{2}$ $S_{x}$ solution. Passivation effects were analyzed by measuring the short circuit current density ( $J_{sc}$ ) of solar cells and photoluminescence (PL) of ITO/InP interfaces. This paper firstly reports the sulfur passivation effects by investigating the correlation between the PL intensity and the short circuit current. Generally, PL intensity and the short circuit current of sulfur passivated sampels wer eincreased, and showed the same trend. Especially, samples prepared at 60.deg. C (N $H_{4}$)$_{2}$ $S_{x}$ solution exhibited the highest $J_{sc}$ and PL intensity. These results demonstrated that the short circuit currents was influenced by the ITO/InP interface states.