• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.1
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• pp.24-28
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• 2010

We have proposed an Buffer layer to improve the transmittance of ITO. Here, $SiO_2$ and $TiO_2$ were selected as the Buffer layer coating material. The structures of Buffer layer were designed in ITO/$SiO_2/TiO_2$/Glass and ITO/Glass/$TiO_2/SiO_2$. Then, these materials were deposited by ion-assisted deposition system. Transmittances of deposited ITO were 86.14 and 85.07%, respectively. These results show that the proposed structure has higher transmittance than the conventional ITO device.

• Laser Solutions
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• v.17 no.1
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• pp.1-6
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• 2014

Indium tin oxide (ITO) is an important transparent conducting oxide (TCO). ITO films have been widely used as transparent electrodes in optoelectronic devices such as organic light-emitting devices (OLED) because of their high electrical conductivity and high transmission in the visible wavelength. Finding ways to control ITO micromachining depth is important role in the fabrication and assembly of display field. This study presented the depth control of ITO patterns on glass substrate using a femtosecond laser and slit. In the proposed approach, a gaussian beam was transformed into a quasi-flat top beam by slit. In addition, pattern of square type shaped by slit were fabricated on the surfaces of ITO films using femtosecond laser pulse irradiation, under 1030nm, single pulse. Using femtosecond laser and slit, we selectively controlled forming depth and removed the ITO thin films with thickness 145nm on glass substrates. In particular, we studied the effect of pulse number on the ablation of ITO. Clean removal of the ITO layer was observed when the 6 pulse number at $2.8TW/cm^2$. Furthermore, the morphologies and fabricated depth were characterized using a optical microscope, atomic force microscope (AFM), and energy dispersive X-ray spectroscopy (EDS).

• Journal of Sensor Science and Technology
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• v.7 no.3
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• pp.211-217
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• 1998

Si and ITO-coated #7059 glass wafers were electrostatically bonded by employing #7740 interlayer. It was inferred that the thermionic- electrostatic migration of $Na^{+}$ ions in the #7740 interlayer played an important role in the bonding process through SIMS analysis. The temperature and voltage required for reliable electrostatic bonding were in the range of $180{\sim}200^{\circ}C$ and $50{\sim}70V_{dc}$(10min), respectively. The low temperature Si-ITO coated glass bonding can be effectively applied to the packaging of field emission devices.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.9
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• pp.711-717
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• 1998

BST(70/30) and BST(50/50) thin films were prepared by Sol-Gel method and studied about the microstructural and dielectric properties with Pt and ITO bottom electrodes. The stock solution was synthesized and spin coated on the Pt/Ti$SiO_2$/Si and Indium Tin Oxide(ITO)/ glass substrate. the coated films were dries at 350$^{\circ}C$ for 10 minutes and annealed at $750^{\circ}C$ for 1 hour for the crystallization. The thin films coated on ITO substrate were crystallized easily and the packing density and roughness of surface were better that those of films coated on Pt substrates. In the BST(50/50) composition the structural properties were similar to the BST(70/30) composition and grain size were decreased with increasing the contents of Sr. The dielectric constant was higher in the BST(50/50) composition compared with the BST(70/30) composition. Using the ITO substrate, the dielectric constant was higher than the Pt substrate while the dielectric loss was showed a reverse trend. The dielectric constant with and increase of temperature was decreased slowly.

• Proceedings of the KAIS Fall Conference
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• 2002.11a
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• pp.181-184
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• 2002

본 연구에서는 ITO (indium tin oxide) /glass 투명기판 위에 다층구조의 OELD 소자를 진공 열증착법으로 제작하였다. 상부 전극과 하부 전극의 종류에 따른 전류밀도-전압 특성을 측정하였으며, 열적 안정성이 다른 정공 수송충을 사용하여 소자를 제작하고 전기ㆍ광학적 특성을 측정하였다. 사용된 저분자 유기화합물은 발광층으로 녹색의 발광을 가지는 Alq₃(tris-(8-hydroxyquinoline)aluminum)를 사용하였고 정공수송 및 주입층으로는 TPD(triphenyl diamine), α-NPD 그리고 CuPc (Copper phthalocyanine)를 각각 증착하였다. 하부 전극으로 사용된 ITO 투명전극은 면저항이 적을수록 전류밀도가 증가하는 것을 볼 수 있고, 상부 전극의 종류에 따른 전류밀도-전압 특성을 분석한 결과 일함수가 낮은 전극일수륵 전류밀도가 높아지는 것으로 나타났다. 유리전이온도(Tg)가 상대적으로 높은 재료인 α-NPD를 정공수송충으로 사용한 경우 더 양호한 특성을 나타내었다.

• Journal of the Korean Ceramic Society
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• v.29 no.1
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• pp.48-52
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• 1992

Indium tin oxide (ITO) layers are of considerable interest on account of the combination of properties they provide high electrical conductivity, high infrared reflection with high solar energy transmission, high transmission in the visible range. We are concerned about the variation of the spectral transmittances and sheet resistances as the thickness of SiO2-ZrO2 barrier layer and ITO layers and heat treating conditions are changed. Transmittances and reflectivities were studied by measuring UV-VIS-NIR-, FT-IR spectroscopy. ITO films are crack free, homogeneous and of polycrystalline cubic structure. The microstructure of good ITO films shows a narrow grain size distribution and mean value of 100 nm. The selectivity of absorbing properties is improved by increasing the thickness of ITO films. The increase of sheet resistance of ITO films are due to the increase in the reaction between films and glass substrate.

• Proceedings of the KIEE Conference
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• 2003.07c
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• pp.1553-1555
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• 2003

Coatings on glass with highly transparent conducting oxide films(TCOs) are performed mostly by using indium tin oxide(ITO). This Oxide material is very common for applications where both high electrical conductivity. Photovoltaic cells, transparent electrical heater, selective optical filter, and a optical transmittance are essential. In this study, ITO thin films were deposited on $SiO_2$/soda-line glass plates by a dc magnetron sputtering technique. The crystallinity and electrical properties of the films were investigated by X-ray diffraction(XRD), atomic force microscopy(AFM) scanning and 4-point probe. The optical transmittance of ITO films in the range of 300-800nm were measured with a spectrophotometer. As a result, we obtained polycrystalline structured ITO films with (222), (400), and (440) peak. Transmittance of all the films were higher than 90% in the visible range.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.499-500
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• 2013

• Korean Journal of Optics and Photonics
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• v.28 no.6
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• pp.356-360
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• 2017

Indium tin oxide (ITO) provides high electrical conductivity and transparency at visible and near-IR wavelengths. ITO is widely used as a transparent electrode for the fabrication of LCDs, OLEDs, and many kinds of optical applications. It is widely employed for electrodes in various electric and display sectors because of its transparency in the visible range and high conductivity. Therefore, one issue is removing a specific area of a layer of material such as ITO or metallic film on a substrate, without affecting the properties of the substrate. ITO-on-glass removal using a laser is friendlier to the environment than traditional methods. In this study, ablation of ITO film on glass using a femtosecond-laser micromachining system (wavelength 1026 nm, pulse duration 150 fs) and a nanosecond-laser micromachining system (wavelength 1027 nm, pulse duration 5 ns) are described, compared, and analyzed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.374-374
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• 2010

본 연구는 Roll-to-Roll Sputtering 장비를 사용하여 제작된 Flexible ITO electrode 필름의 방사선 검출기로의 적용가능성을 알아보기 위해 기존의 Glass ITO electrode의 전기적 특성을 비교 평가하였다. 본 연구는 Flexible ITO electrode와 Glass ITO electrode을 하부전극으로 형성하고, 최근에 X-ray 변환체로 활발히 연구되고 있는 Powder 형태의 반도체물질인 HgI2 와 PbI2를 Binder와 일정한 비율로 혼합하여 3-Rolls-Miller를 사용하여 Powder를 일정한 미세크기로 만들고, 대면적 제작이 용이한 Screen-Printing method을 이용하여 시편을 제작하였다. 제작된 필름은 하부전극의 종류에 따른 X-ray 입사 후의 전기적신호의 차이를 측정하고, HgI2와 PbI2 중 Flexible ITO electrode와 더욱 효율적으로 반응하여 기존의 Glass ITO electrode를 대체할 수 있는 전극을 발견하여 진단용 의료영상의 왜곡 현상을 제거할 수 있는 Flexible 방사선 검출기의 제작의 초석을 제공하는 연구를 목적으로 한다. SEM(Scanning Electron Microscope) 통하여 반도체 물질의 결정구조와 크기를 알아보았고, 하부 전극의 종류에 따른 전기적 신호검출을 위해 제작된 필름의 암전류(Dark current) 와 민감도(Sensitivity)를 측정한 후, SNR (Signal -to- Noise)을 계산하여 평가하였다.