• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.10a
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• pp.109-110
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• 2009

실리카와 폴리아닐린의 core-shell 복합체 나노입자를 실리카 나노입자 분산용액을 이용하여 제조하였다. 제조된 복합체 나노입자를 전기변색박막의 소재로 이용하기 위하여 알코올 용액에 분산하였고, 분산된 용액에 Tetraethoxysilane (TEOS)를 소량의 HCl 용액과 함께 첨가하여 코팅 용액을 제조하였다. 코팅 용액을 인듐주석산화물(ITO) 박막이 도포된 유리 기판위에 도포하고 열처리 하여 매우 높은 부착력을 갖는 전기변색박막을 얻을 수 있었다.

• Solar Energy
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• v.12 no.2
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• pp.62-78
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• 1992

The solar cells of $ITO_{(n)}/Si_{(p)}$, which are ITO thin films deposited and heated on Si wafer 190[$^{\circ}C$], were fabricated by two source vaccum deposition method, and their electrical properties were investigated. Its maximum output is obtained when the com- position of the thin film consist of indium oxide 91[mole %] and thin oxide 9[mole %]. The cell characteristics can be improved by annealing but are deteriorated at temperature above 600[$^{\circ}C$] for longer than 15[min]. Also, we investigated the spectral response with short circuit current of the cells and found that the increasing of the annealing caused the peak shifted to the long wavelength region. And by experiment of the X-ray diffraction, it is shown to grow the grains of the thin film with increasment of annealing temperature. The test results from the $ITO_{(n)}/Si_{(p)}$ solar cell are as follows. short circuit current : Isc= 31 $[mW/cm^2]$ open circuit voltage : Voc= 460[mV] fill factor : FF=0.71 conversion efficiency : ${\eta}$=11[%]. under the solar energy illumination of $100[mW/cm^2]$.

• Journal of the Korean Vacuum Society
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• v.17 no.2
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• pp.165-169
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• 2008

It is very important to decompose uniformly the metal film in semiconductor devices process. The thickness uniformity of the ITO film by standard magnetron sputtering system are about $\pm4%\sim\pm5%$ and the center of the wafer is more thick than the edge of the wafer. We designed and made the discharge electrode structure and controlled the direction of sputtering materials in magnetron sputtering system. The thickness uniformity are increased to $\pm0.8\sim1.3%$ in 4" wafer using the new sputtering gun in magnetron sputtering system. In wafer to wafer thickness uniformity, $\pm$5.3% are increased to $\pm$1.5% using the new sputtering gun. The thickness uniformity of the Al film are about $\pm$1.0% using the new sputtering gun in magnetron sputtering system.

• Journal of the Korean Vacuum Society
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• v.5 no.4
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• pp.348-353
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• 1996

Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

• Proceedings of the Korean Vacuum Society Conference
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• 2009.02a
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• pp.135.2-135.2
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• 2009

• Proceedings of the Korean Vacuum Society Conference
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• 2008.02a
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• pp.211-211
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.118-118
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• 2008

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.304-304
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• 2008

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.11a
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• pp.415-416
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• 2010

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.85-85
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• 2011

RF magnetron co-sputtering을 이용하여 RF power 및 공정 압력에 따라 GZO 및 IGZO 박막을 유리기판 위에 제작하고 투명전극으로 구조적, 광학적, 전기적 특성을 조사하였다. 박막 증착 조건의 초기 압력은 $1.0{\times}10^{-6}Torr$, 증착온도는 상온으로 고정하였으며 기판은 Corning 1737 유리기판을 사용하였다. 소결된 타겟으로 ZnO, $In_2O_3$ 및 $Ga_2O_3$을 이용하였으며, 각각의 타겟은 독립 된 RF파워를 변화시키며 투명전극의 성분비를 조절하였으며, 증착 압력은 10 m에서 100 mTorr까지, 기판과의 거리는 25 mm에서 65 mm까지 변화시키며 박막을 제작하였다. 유리기판 위에 불순물이 첨가된 모든 ZnO 박막에서 (002) 면의 우선배향성이 관찰되었고, 3.4eV에서 3.5eV 정도의 광학적 밴드갭을 가지며 80% 이상의 투과율을 나타내었다. GZO 박막의 경우 증착 조건에 따라 투명전극에 요구되는 $5*10^{-3}{\Omega}-cm$ 이하의 전기적특성을 가짐을 보였으며, gallium 성분이 0%에서 6%로 증가함에 따라 3.3eV에서 3.5eV로 blue-shift하였으며, 비저항은 0.02에서 $0.005{\Omega}cm$로 낮아졌으며 이동도는 $4.7cm^2V^{-1}s^{-1}$에서 $2.7cm^2V^{-1}s^{-1}$로 보이며 GZO 물질이 투명전극으로서 기존의 ITO 물질 대체 가능성을 확인하였다. IGZO 박막은 In과 Ga의 함량에 따라 저항률의 변화가 크게 나타났으며, In의 함량이 많을수록 이동도, 캐리어 농도의 증가로 저항률은 감소하였다.