• Korean Journal of Materials Research
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• v.12 no.5
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• Proceedings of the Korean Vacuum Society Conference
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• 2008.08a
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• pp.314-314
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• 2008

• Journal of the Korean institute of surface engineering
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• v.53 no.4
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• pp.182-189
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• 2020

Indium tin oxide (ITO) used a transparent electrode of a photoelectric device has a low sheet resistance and a high transmittance. However, ITO is disadvantageous in that the process cost is expensive, and the process time is long. Silver nanowires (AgNWs) transparent electrodes are based on a low cost solution process. In addition, it has attracted attention as a next-generation transparent electrode material that replaces ITO because it has similar electrical and optical characteristic to ITO, it is noted as a. AgNW thin films are mainly produced by spin-coating. However, the spin-coating process has a disadvantage of high material loss. In this study, the material loss was reduced by using about 2~10 ㎕ of AgNW solution on a (25 × 25) ㎟ substrate using the shear-coating method. It was also possible to align AgNWs in the drag direction by dragging the meniscus of the solution. The electro-optical properties of the AgNW thin film were adjusted by changing the experimental parameters that the amount of AgNWs suspension, the gap between the substrate and the blade, and the coating speed. As a result, AgNW thin films with a transmittance of 90.7 % at a wavelength of 550 nm and a sheet resistance of 15 Ω/□ was deposited and exhibited similar properties to similar AgNW transparent electrodes studied by other researchers.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.160-160
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• 2016

최근 indium tin oxide (ITO)의 높은 전기 전도도 및 광투과율을 이용하여 줄 발열을 기초하는 투명 면상 발열체에 대한 연구가 활발히 진행 되고 있다. 하지만 단일 ITO박막으로 제작한 투명 면상 발열체는 다양한 문제점들을 가지고 있다. 따라서 본 연구에서는 단일 ITO박막을 이용한 투명 면상 발열체의 단점을 보완하는 하이브리드 구조 투명 면상 발열체를 제작하여 금속 삽입층의 두께에 따른 전기전도도, 광투과율을 관찰 하였다. 그 결과 하이브리드 구조의 투명 면상발열체의 발열량, 온도 균일성등이 기존의 단일 ITO 박막의 투명 면상 발열체보다 효율이 크게 향상 된 것을 확일 할 수 있었다.

• Journal of Korean Ophthalmic Optics Society
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• v.5 no.1
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• pp.7-11
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• 2000

The anti-reflective anti-static (ARAS) optical film is designed using absorbent materials such as ITO, $TiN_xW_y$, Ag by Essential Macleod program. [air ${\mid}TiN_xW_y{\mid}SiO_2{\mid}$ glass] two layer shows wide-band AR coating in the wavelength range of 450~700 nm. The reflectivity, transmittance of this coating are below 0.5%, about 75%, respectively. [air $SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$, ITO glass] layer can adjust reflectance of below 0.5% with above 97% transmittance. In the [air ${\mid}SiO_2{\mid}TiO_2{\mid}SiO_2{\mid}$ Ag glass] layer, the transmission can be controlled at above 96% with reflectance of 1~2%.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.389-389
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• 2011

Transparent conductive oxide (TCO) 박막은 디스플레이 및 태양전지 등 광범위한 분야에서 적용되고 있으며, 특히 indium tin oxide (ITO)는 낮은 전기적 저항과 우수한 광투과도를 가지고 있어서 이미 많은 분야에 적용되고 있다. 본 연구는 RF와 DC를 혼용한 마그네트론 스퍼터링 공정을 활용하여 ITO 박막 특성 및 이를 활용한 유기태양전지 적용에 관한 것이다. UV-O3 처리된 glass 기판위에 thermal evaporation 방식으로 밀착력을 높이기 위하여 Cr을 5 nm 두께로 증착한 후 Al을 95 nm 증착하였다. 그 위에 스퍼터링 공정으로 ITO 박막을 In2O3:SnO2 target (10wt% SnO2)을 사용하여 1.0 mTorr의 공정압력(Ar:O2=30:1), 50W의 RF power 및 0.11kW의 DC power에서 50~250 nm의 두께로 증착하였다. ITO 박막의 결정구조 및 표면 형상은 x-ray diffraction (XRD) 및 scanning electron microscope (SEM)을 사용하여 분석하였으며, 전기적 특성은 four-point probe법으로 비저항값을 측정하였다. 또한 높은 광변환효율을 가지는 태양전지 제작을 위하여, 다양한 두께의 ITO 박막을 사용하여 ITO/ZnO/P3HT:PCBM/PEDOT/Ag 구조의 유기태양전지를 제작하여 소자 특성을 최적화 하였다.

• Journal of the Korean Vacuum Society
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• v.9 no.3
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• pp.233-236
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• 2000

The structural, electrical and chemical characteristics of Al alloy thin film with low impurity concentrations AlW deposited by using dc magnetron sputtering deposition are investigated for the applications as data bus line in the TFT-LCD panel. The deposited thin films show the decrease of resistivity and the increase of grain size after the RTA at $300^{\circ}C$ for 20 min.. Moreover, the resistivity of AlW does not show appreciable grain size dependence after RTA. It is concluded that the decrease of resistivity after RTA is due to the increase of grain size. The annealed AlW is found to be hillock free. And for investigating chemical attack in TFT-LCD etching processing the electric potential of AlW alloy for Ag/AgCl were investigated by cyclic voltammetry. When W wt.% of AlW alloy was higher than about 3%, the electric potential of AlW was more positive than ITO's. Therefore AlW alloy thin film can be propose to use for data bus line.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.450-450
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• 2006

Organic light-emitting diodes (OLED) as pixels for flat panel displays are being actively pursued because of their relatively simple structure, high brightness, and self-emitting nature [1, 2]. The top-emitting diode structure is preferred because of their geometrical advantage allowing high pixel resolution [3]. To enhance the performance of TOLEDs, it is important to deposit transparent top cathode films, such as transparent conducting oxides (TCOs), which have high transparency as well as low resistance. In this work, we report on investigation of the characteristics of an indium tin oxide (ITO) cathode electrode, which was deposited on organic films by using a radio-frequency magnetron sputtering method, for use in top-emitting organic light emitting diodes (TOLED). The cathode electrode composed of a very thin layer of Mg-Ag and an overlaying ITO film. The Mg-Ag reduces the contact resistivity and plasma damage to the underlying organic layer during the ITO sputtering process. Transfer length method (TLM) patterns were defined by the standard shadow mask for measuring specific contact resistances. The spacing between the TLM pads varied from 30 to $75\;{\mu}m$. The electrical properties of ITO as a function of the deposition and annealing conditions were investigated. The surface roughness as a function of the plasma conditions was determined by Atomic Force Microscopes (AFM).

• Journal of Sensor Science and Technology
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• v.31 no.2
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• pp.90-95
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• 2022

The effect of the structure of an ITO nanoparticle film sensor on its performance was studied. A printed ITO film (P-ITO film) was fabricated on a flexible polyethylene terephthalate (PET) substrate, and the contact resistance of the electrode and sensor response change were clarified according to the detection position. The contact resistance between Ag and P-ITO was observed to be -204.4 Ω using the transmission line method (TLM), confirming that a very good ohmic contact is possible. In addition, we confirmed that the contact position of the analyte had a significant influence on the response of the sensor. Based on these results, the performance of the four types of sensors was compared. Consequently, we observed that 1) optimizing the resistance of the printed film, 2) optimizing the electrode structure and analyte input position, and 3) optimizing the electrode area are very important for fabricating a metal oxide nanoparticle (MONP) sensor with optimal performance.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.2
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• pp.1-11
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• 2014

Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.