• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.21.2-21.2
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• 2011

에어로졸 데포지션(Aerosol deposition) 기술은 상온에서 초음속 유동을 통해 분사된 미세 입자가 기판에 충돌하면서 강력한 결합을 형성하는 방식으로 코팅이 이루어진다. 이 방법은 별도의 소결과정 없이 상온에서도 조밀하고 균일한 박막을 형성할 수 있다. 또한 세라믹, 금속 재질의 다양한 입자를 사용할 수 있을 뿐만 아니라 금속, 유리 기판등에 적용이 가능하다. 본 논문은 이러한 에어로졸 데포지션 기술을 이용하여 광촉매 효과가 뛰어난 $TiO_2$ 입자를 대면적 코팅에 적용가능한 초음속 노즐을 통해 분사하여 ITO기판 위에 박막을 형성하였다. $TiO_2$ 입자의 크기, 기판의 이송 속도와 왕복횟수, 공급 유량 등이 코팅면의 특성과 조성 등에 미치는 영향을 분석하였다. $TiO_2$ 박막층의 형상과 두께는 주사전자현미경(SEM)을 통해 확인하였고, X-ray diffraction (XRD)를 이용하여 코팅 입자와 박막 층의 조성을 각각 확인하였다. 에어로졸 데포지션을 이용한 $TiO_2$ 코팅층은 염료감응형 태양전지(DSSC), 자정작용(self-cleaning), 살균작용(antibacterial effect) 등의 적용분야에 적용 가능할 것으로 판단된다.

• Journal of the Korean Ceramic Society
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• v.44 no.3 s.298
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• pp.137-141
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• 2007

$La_{2}O_{3}-TiO_{2}-SiO_{2}$ glass, a type that could not obtained so far by the conventional melting method, was prepared successfully using a sol gel process. Glass derived with the sol-gel process has compositions of $5La_{2}O_{3}-5TiO_{2}-90SiO_{2},\;5La_{2}O_{3}-10TiO_{2}-85SiO_{2}$, and $5La_{2}O_{3}-20TiO_{2}75SiO_{2}$. The UV-visible absorption edge of all glass compositions was below 400 nm. The measured density is in the range of 2.55-2.89, and was nearly identical to the calculated density and the refractive index of the glasses derived from the sol-gel ranges from 1.545 to 1.645. The molar additive coefficient of $TiO_{2}$ measured in this ternary system is lower than the calculated value, while the value of $La_{2}O_{3}$ is higher.

• Journal of the Korean Solar Energy Society
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• v.30 no.3
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• pp.90-97
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• 2010

$TiO_2$ thin films for solar energy utilization were prepared on ITO coated glass by r.f magnetron sputtering with variations of working pressure, oxygen flow rate and annealing temperature. Ion insertion and extraction reaction, and ion storage properties of films were investigated by using a cyclic voltammetry. Transmittance of thin films in as-prepared, colored and bleached states was measured by UV-VIS spectrophotometer. The samples deposited in our sputtering conditions showed poor electrochromic properties. Improvement in ion storage properties of $TiO_2$ thin film was observed after annealing at temperature of $400^{\circ}C$ in air for 2 hours. It was found that $TiO_2$ thin film in electrochromic device could be used as a passive counter-electrode.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.615-616
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• 2005

Carbon Nanotubes (CNT) on flexible indium tin oxide (ITO) PET films were prepared for dye-sensitized solar cell (DSSC). These CNTs were prepared by spray coating method for various amount of light transparency. Also, Pt counter electrode was prepared by electro deposition method. All $TiO_2$ electrodes were deposited on ITO-PET films by spray coating method. Micro structural images show that CNT counter electrodes prepared by spray-coating have more dense structure with increasing spraying time (0 to 60 seconds). DSSC consisting of $TiO_2$ electrode and CNT counter electrode was fabricated with various amount of light absorption. DSSC have higher light energy conversion efficiency with increasing the thickness of CNT counter electrode. CNT counter electrode is at least compatible to that of CNT counter electrode.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.18 no.4
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• pp.165-168
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• 2008

Ta-doped thin films were deposited on quartz and indium-tin oxide glass substrates using a co-sputtering method. The Ta-doped films formed a solid solution that induced structural changes from rutile to anatase phase. The anodic photocurrents of the Ta-doped $TiO_2$ electrodes were observed not only in UV but also in the visible light range. The photocurrent response in visible light on Ta-doped $TiO_2$ films are due to bandgap reduction.

• Korean Journal of Materials Research
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• v.17 no.11
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• pp.593-600
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• 2007

Aluminum was anodized in a $H_2SO_4$ solution, and titanium (IV) oxide ($TiO_2$) was electrodeposited into nanopores of anodic porous alumina in a mixed solution of $TiOSO_4$ and $(COOH)_2$. The photocatalytic activity of the prepared film was analyzed for photodegradation of methylene blue aqueous solution. Consequently, we found it was possible to electrodeposit $TiO_2$ onto anodic porous alumina, and synthesized it into the nanopores by hydrolysis of a titanium complex ion under AC 8-9 V when film thickness was about $15-20{\mu}m$. The photocatalytic activity of $TiO_2$-loaded anodic porous alumina ($TiO_2/Al_2O_3$) at an impressed voltage of 9 V was the highest in every condition, being about 12 times as high as sol-gel $TiO_2$ on anodic porous alumina. The results revealed that anodic porous alumina is effective as a substrate for photocatalytic film and that high-activity $TiO_2$ film can be prepared at low cost.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.5
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• pp.256-261
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• 2009

Hydrophilic and transparent $TiO_2$ thin film was fabricated by sol-gel method and the properties of contact angle, surface morphology, and transmittance were measured. In addition, surfactant Tween 80 was used for increasing the hydrophilic property of thin film. When the contents of Tween 80 in $TiO_2$ solution was 0, 10, 30, 50wt%, the contact angles of $TiO_2$ thin film were $41.4^{\circ}$, $18.2^{\circ}$, $16.0^{\circ}$, $13.2^{\circ}$, respectively. Fabricated $TiO_2$ thin film showed the photocatalytic property that decomposed methylene blue and decreased the absorbance of solution after UV irradiation. $TiO_2$ thin films fabricated with the solution of 30 wt% Tween 80 were deposited on glass (bare), antimony tin oxide (ATO), fluorine tin oxide (FTO), indium tin oxide (ITO) coated glass substrates, and the contact angle and transmittance of thin film was measured. The contact angles of thin films deposited on four substrates were $16.2\sim27.1^{\circ}$ and was decreased to the range of $13.2\sim17.6^{\circ}$ after UV irradiation, Especially, the thin films coated on ATO and FTO glass substrate showed high transmittance of 74.6% in visible range, respectively, and low transmittance of 54.2% and 40.4% in infrared range, respectively.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2018.06a
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• pp.57-57
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• 2018

Zinc-oxide (ZnO), II-VI semiconductor with a wide and direct band gap (Eg: 3.2~3.4 eV), is one of the most potential candidates to substitute for ITO due to its excellent chemical, thermal stability, specific electrical and optoelectronic property. However, the electrical resistivity of un-doped ZnO is not low enough for the practical applications. Therefore, a number of doped ZnO films have been extensively studied for improving the electrical conductivities. In this study, Ti-doped ZnO films were successfully prepared by atomic layer deposition (ALD) techniques. ALD technique was adopted to careful control of Ti doping concentration in ZnO films and to show its feasible application for 3D nanostructured TCO layers. Here, the structural, optical and electrical properties of the Ti-doped ZnO depending on the Ti doping concentration were systematically presented. Also, we presented 3D nanostructured Ti-doped ZnO layer by combining ALD and nanotemplate processes.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.632-635
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• 2004

We have studied the effect of $TiO_2$ layer deposited by RF magnetron sputtering which is used as an ultra thin hole-injection buffer layer in organic light-emitting diode (OLED). The $TiO_2$ thin film layer prevents metallic ions from diffusing from the ITO layer to the organic layers and improves the balance of hole and electron injections and the interface characteristics between the electrode and the organic layer. With 2 nm thickness of $TiO_2$, the quantum efficiency was improved by 45 % compared to the device fabricated without the $TiO_2$ layer.