• Journal of Information Display
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• v.2 no.1
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• pp.38-42
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• 2001

Thin films of $In_2O_3-SnO_2$(ITO), $SnO_2$, and $SiO_2$ were prepared on the PET substrate by DC magnetron roll sputtering. 135 nm thick ITO film on $SiO_2$/PET substrate has sheet resistance as low as 55 ${\Omega}/square$ and transmittance as high as 85%. $H_2O$gas permeation through the film was 0.35 g/$m^2$ in a day. These properties are enough on optical film for the plastic LCD substrate or touch panel. Both refractive index and sheet resistance of ITO was found to be very sensitive to $O_2$ flow rate. Oxygen flow conditions have been optimized from 4 to 5 SCCM at $10^{-3}$torr. It is also shown that both thickness of $SnO_2$ and refractive index of $SiO_2$ decrease as $O_2$ flow rate increases.

• Journal of the Korean Institute of Telematics and Electronics
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• v.18 no.4
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• pp.21-26
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• 1981

SnO2/n-Si and ITO/n-Si SIS solar cells have been fabricated ty mears of electron-beam deposition. The optimum oxidation and heat-treatment condition for SnO2/n-Si cells and ITO/n-Si cells are 50$0^{\circ}C$-5min., 30$0^{\circ}C$-10min., and 50$0^{\circ}C$-5min., 30$0^{\circ}C$-20min. respectively. The open-circuit Voltage(Voc), short-circuit current density(Jsc), fill factor(FF), and efficiency (η) under AMI(100mW/$\textrm{cm}^2$) illumination were 0.4V, 34mA/$\textrm{cm}^2$, 0.44, and 6.0%(active area efficiency, 6.9%) for SnO2/n-Si solar cells, and 0.44V, 36mA/$\textrm{cm}^2$, 0.53, and 8.45%(active area efficiency, 9.71%) for ITO/n-Si solar calls.

• Korean Journal of Materials Research
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• v.12 no.5
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• pp.347-352
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• 2002

A transparent dielectric of the $PbO-B_2O_3-SiO_2-A1_2O_3$ system which was a low melting glass has been used for PDP (Plasma Display Panel), but it has a problem which is a reaction to be occurred between a transparent dielectric layer and electrodes (Ag, ITO) after firing. This research was conducted for ion migration of $Ag^+\$ and $Sn^ {2+}$ during firing three different frits of low melting glass. The result showed that yellowing phenomena occurred through a chemical reaction between $Ag^+\$and $Sn^ {2+}$ at 550~58$0^{\circ}C$ for 20~60 min. In addition, it was confirmed that the migration of $Sn^{2+}$ from ITO electrode made a strong effect on the yellowing phenomena.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.15-21
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• 2001

전자파 차폐 및 반사방지용으로 사용되는 SiO$_2$/ITO 이층박막의 전기적 특성에 미치는 전이금속이온의 영향에 대해 고찰하고 전자파 차폐이론식으로부터 박막의 전도특성에 모사하여 효과적인 전자파 차폐효과를 얻기 위한 전도막을 설계하고자 하였다. ITO 상층부에 전이금속염을 첨가한 실리카 복합졸을 코팅하여 SiO$_2$/ITO 이층막을 제조한 결과 최저 표면저항치를 나타내는 첨가량은 전이금속의 종류에 따라 차이를 보이지만 Sn 및 Zn이 첨가된 졸로부터 형성된 박막은 $10^{5}$Ω/$\square$ 이하의 낮은 저항치를 보였으며 가장 안정된 표면저하을 나타내었다. 또한 전자파 차폐효과와 전도박막의 표면저항을 차폐이론식으로부터 모사한 결과 Zn과 Sn의 전이금속염이 첨가된 SiO$_2$/ITO 투명전도막은 TCO99에서 정한 전자파 차폐기준에 부합하였다.다.

• Korean Journal of Materials Research
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• v.11 no.4
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• pp.305-311
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• 2001

$PbO-B_2O_3-SiO_2-Al_2O_3$, system was investigated for optical, thermal and electrical properties of transparent dielectric. We also studied the reaction between transparent dielectric and transparent electrode(Indium Tin Oxide, ITO) during firing. For the evaluation of properties, dielectrics were prepared under the conditions fired at 520~58$0^{\circ}C$ with 12$\mu\textrm{m}$ thickness. In the reaction between dielectrics and electrode(ITO), In ions diffused into dielectric layer, while Sn ion diffusion was not observed. The coefficient of thermal expansion, the dielectric constant, the glass transition temperature and the transmittance of the dielectric were greatly dependent on PbO content. The increase of the coefficient of thermal expansion and the dielectric constant were monitored by increasing PbO, while the glass transition temperature and the transmittance were decreased. With the increased $Al_2O_3/B_2O_3$ ratio, the coefficient of thermal expansion and the transmittance were decreased, while the dielectric constant was increased. The glass transition temperature did not change significantly.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.265.1-265.1
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• 2016

여러 application에 적용하기 위하여 p-type SnO 박막과 전극 간의 접촉 저항을 분석이 필요하였다. 이를 Transmission Line Method(TLM) 패턴 소자를 제작한 후 전기적 특성을 분석함으로써 알 수 있었다. $Si/SiO_2$ 기판에 Reactive Magnetron Sputtering법을 이용하여 c축 우선 배향된 SnO를 100nm 증착하고 photolithography 공정을 통해 전극을 패턴화하여 100nm 두께로 증착하였다. 전극 간 거리는 1, 2, 4, 8, 16, 32, 64, 128, 256, 512, $1024{\mu}m$로 각각 2배씩 증가하는 패턴이고 폭 W는 $300{\mu}m$ 이다. p-type SnO 의 경우, work function이 4.8eV이기 때문에 전극과 ohmic contact이 되기 위해서는 4.8eV보다 높은 work function 값을 가지는 전극이 필요하였다. 이 조건과 맞는 후보로 Ni(5.15eV), ITO(5.3eV)를 설정한 후 소자를 제작하였다. 제작된 소자는 열처리 하지 않은 소자와 Rapid Thermal Annealing(RTA) 장비에서 $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$에서 각각 1분씩 열처리한 소자의 특성을 분석하였다. 열처리 하지 않은 소자의 경우 Ni 전극의 specific contact resistance는 $3.42E-2{\Omega}$의 값을 나타내었고, ITO의 경우 $3.62E-2{\Omega}$값을 나타내었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.31 no.3
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• pp.165-170
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• 2018

In this study, double-layered TCO (transparent conductive oxide) films were produced by depositing two distinct TCO materials: $SnO_2$ works as an n-type layer and ITO (indium-doped tin oxide) serves as a transparent conductor. Both transparent conductive oxide-films were sequentially deposited by sputtering. The electrical and optical properties of single-layered TCO films ($SnO_2$) and double-layered TCO ($ITO/SnO_2$) films were investigated. A TCO-embedding photodetector was realized through the formation of an $ITO/SnO_2/p-Si/Al$ layered structure. The remarkably high rectifying ratio of 400.64 was achieved with the double-layered TCO device, compared to 1.72 with the single-layered TCO device. This result was attributed to the enhanced electrical properties of the double-layered TCO device. With respect to the photoresponses, the photocurrent of the double-layered TCO photodetector was significantly improved: 1,500% of that of the single-layered TCO device. This study suggests that, due to the electrical and optical benefits, double-layered TCO films are effective for enhancing the photoresponses of TCO photodetectors. This provides a useful approach for the design of photoelectric devices, including solar cells and photosensors.

• Transactions on Electrical and Electronic Materials
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• v.16 no.6
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.211.2-211.2
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• 2013

ITO (indium tin oxide)는 스마트폰을 비롯한 여러전자제품의 터치패널 투명전극으로 가장 많이 쓰이고 있는 물질이다. 산화 인듐(In2O3)과 산화 주석(SnO2)의 화합물로 우수한 전기적 특성과 광학적 특성을 지녀 태양전지 분야에서도 그 활용가능성이 높다. 또한 최근 고효율 태양전지인 HIT (heterojunction with intrinsic thin layer) solar cell의 경우 Si 기판의 두께가 얇고, 소자의 양면에서 태양광을 흡수하여 효율을 증가 시키데, 특히 투명 전극의 물리적 특성들과 계면의 트랩의 상태가 효율에 영향을 미친다. 본 연구에서는 HIT Si 기판의 태양전지 구조에 전극으로 쓰일 ITO 박막을 sputtering 방법으로 증착하여 물리적 특성을 연구하였다. ITO 타겟을 활용한 radio frequency magnetron sputtering 방법으로 Si 기판에 ITO 박막을 증착하였다. 50W의 방전전력과 Ar 10 sccm 분위기에서 성장시킨 ITO 박막을 Transmission Electron Microscope 로 측정하였다. X-ray Diffraction 측정으로 ITO 결정의 방향성을 확인하고 Photoluminescence 측정으로 성장된 ITO 박막의 밴드갭 에너지를 확인하였다. $100^{\circ}C$, $200^{\circ}C$, $300^{\circ}C$, $400^{\circ}C$에서 후열처리한박막의 광 투과율, 비저항, 이동도를 측정 비교하여 적절한 후열처리 온도를 찾는 연구를 진행하였다. Sputtering 방법으로 성장시킨 ITO 박막의 전기적, 광학적 특성을 측정하여 HIT solar cell에 활용될 가능성을 확인하였다.

• Journal of the Korean institute of surface engineering
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• v.55 no.6
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• pp.353-362
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• 2022

Recently, transmittance of photomasks for ultra-violet (UV) region is getting more important, as the light source wavelength of an exposure process is shortened due to the demand for technologies about high integration and miniaturization of devices. Meanwhile, such problems can occur as damages or the reduction of yield of photomask as electrostatic damage (ESD) occurs in the weak parts due to the accumulation of static electricity and the electric charge on chromium metal layers which are light shielding layers, caused by the repeated contacts and the peeling off between the photomask and the substrate during the exposure process. Accordingly, there have been studies to improve transmittance and antistatic performance through various functional coatings on the photomask surface. In the present study, we manufactured antireflection films of Nb₂O₅, | SiO₂ structure and antistatic films of ITO designed on 100 × 100 × 3 mmt sodalime glass by DC magnetron sputtering system so that photomask can maintain high transmittance at I-line (365 nm). ITO thin film deposited using In/Sn (10 wt.%) on sodalime glass was optimized to be 10 nm-thick, 3.0 × 103 𝛺/☐ sheet resistance, and about 80% transmittance, which was relatively low transmittance because of the absorption properties of ITO thin film. High average transmittance of 91.45% was obtained from a double side antireflection and antistatic thin films structure of Nb₂O₅ 64 nm | SiO₂ 41 nm | sodalime glass | ITO 10 nm | Nb₂O₅ 64 nm | SiO₂ 41 nm.