• The KIPS Transactions:PartB
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• 제18B권3호
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• pp.109-116
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• 2011

In this paper, we introduce non-touch style interface system technology without any touch style controlling mechanism, which is called as "Air-interface". To develop this system, we used the full reflection principle of infrared (IR) light and then user's hand is separated from the background with the obtained image at every frame. The segmented hand region at every frame is used as input data for an hand-motion recognition module, and the hand-motion recognition module performs a suitable control event that has been mapped into the specified hand-motion through verifying the hand-motion. In this paper, we introduce some developed and suggested methods for image processing and hand-motion recognition. The developed air-touch technology will be very useful for advertizement panel, entertainment presentation system, kiosk system and so many applications.

• Journal of Adhesion and Interface
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• 제3권3호
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• pp.22-29
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• 2002

UV curable coating system described here consists of double layers, namely under layer and top laser coatings. The former consists of organic-inorganic conductive materials and the latter consists of multifunctional acrylates. Transparent double layer coatings were prepared on the transparent substrates i.e. PMMA, PC, PET etc. by the wet and wet coating procedure. Their surface resistances and film properties were measured as a function of the top layer thickness and relative humidity. As the thickness of the top layer was less than $10{\mu}m$, the surface resistance in the range of $10^8{\sim}10^{10}{\Omega}/cm^2$ was obtained. The surface properties of the two-layer coating were remarkably improved compared with the single layer coating. The effects of migration of conducting materials on the film properties of multilayer coating were investigated by using contact angle and Fourier transform infrared/attenuated total reflection(FT-IR/ATR). It was found that the migration of dopant(dodecyl benzenesulfonic acid, DBSA) molecules were occurred from film-substrate interface to film-air interface in the organic conductive coating system but not in the inorganic one.

• Journal of the Korean Electrochemical Society
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• 제3권2호
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• pp.109-114
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• 2000

The relation between the phase-shift profile fur the intermediate frequencies and the Langmuir adsorption isotherm at the poly-Ir/0.1 M $H_2SO_4$ aqueous electrolyte interface has been studied using ac impedance measurements, i.e., the phase-shift methods. The simplified interfacial equivalent circuit consists of the serial connection of the electrolyte resistance $(R_s)$, the faradaic resistance $(R_F)$, and the equivalent circuit element $(C_P)$ of the adsorption pseudoca-pacitance $(C_\phi)$. The comparison of the change rates of the $\Delta(-\phi)/{\Delta}E\;and\;\Delta{\theta}/{\Delta}E$ are represented. The delayed phase shift $(\phi)$ depends on both the cathode potential (E) and frequency (f), and is given by $\phi=tan^{-1}[1/2{\pi}f(R_s+R_F)C_P]$. The phase-shift profile $(-\phi\;vs.\;E)$ for the intermediate frequency (ca. 1 Hz) can be used as an experimental method to determine the Langmuir adsorption isotherm $(\theta\;vs.\;E)$. The equilibrium constant (K) for H adsorption and the standard free energy $({\Delta}G_{ads})$ of H adsorption at the poly-Ir/0.1 M $H_2SO_4$ electrolyte interface are $2.0\times10^{-4}$ and 21.1kJ/mol, respectively. The H adsorption is attributed to the over-potentially deposited hydrogen (OPD H).

• Journal of Information Science Theory and Practice
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• 제1권4호
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• pp.48-66
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• 2013

The aim of this study is to examine the user's online searching behavior in IR interfaces of e-journal database systems. The study is purely based on survey methods and tries to analyse the online searching behavior of respondents of social science disciplines who were doing research in three target central universities of Delhi (i.e. DU, JMI, and JNU). For measuring the responses of the respondents in IR interfaces of e-journal database systems, a total of 396 questionnaires were distributed among the students and out of all, 305 responses were used for the study. The findings of the study reveal that most of the students were not using all the facilities offered in IR interfaces of e-journal database systems for their retrieval process and also encourages menu based searches rather than command based searching.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 한국전기전자재료학회 1998년도 춘계학술대회 논문집
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• pp.411-414
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PT layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PT layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PT layer of c-axial orientation rained thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PT layer were measured, too.

• Korean Journal of Materials Research
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• 제11권2호
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• pp.151-154
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• 2001

The leakage current behaviors of PLZT capacitors with top electrodes of Pt, Ir, and $IrO_2$ are investigated before and after hydrogen forming gas anneal. The P-E hysteresis and fatigue properties of Pt/PLZT/Pt capacitors are almost recovered after recovery anneal in $O_2$ ambient. The leakage current mechanisms of PLZT capacitors with Pt and $IrO_2$ top electrodes are consistent with space-charge influenced injection model showing the strong time dependence irrespective of annealing conditions. On the other hand, the leakage current behavior of Ir/PLZT/Pt capacitor shows steady state independent of time because IrPb, conducting phase, formed at interface between Ir top and PLZT is a high conduction path. Teh leakage current mechanism of Ir/PLZT/Pt capacitor is consistent with Schottky barrier model.

• Proceedings of the KIEE Conference
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• 대한전기학회 1998년도 하계학술대회 논문집 G
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• pp.2501-2503
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• 1998

In this paper, the silicon-nitride membrane structure for IR sensor was fabricated through the etching and the direct bonding. The PTO layer as a IR detection layer was deposited on the membrane and its characteristics were measured. The attack of PTO layer during the etching of silicon wafer as well as the thermal isolation of the IR detection layer can be solved through the method of bonding/etching of silicon wafer. Because the PTO layer of c-axial orientation raised thermal polarization without polling, the more integration capability can be achieved. The surface roughness of the membrane was measured by AFM, the micro voids and the non-contacted area were inspected by IR detector, and the bonding interface was observed by SEM. The polarization characteristics and the dielectric characteristics of the PTO layer were measured, too.

• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• 제9권2호
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• pp.223-228
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• 2016

A digital micromirror system was proposed for future smart learning. This system is the compact micro-projector with a built-in CMOS sensor modules. It can provide the various interfaces. The basis of interface is to recognize the finger tip on projected image. But the recognition rate of finger tip is very low due to various image degradations. In this paper, we propose the finger tip recognition algorithm that minimize the image degradation factors by using the Retinex transform and IR structuring light. By verifying the availability of the algorithm through experiment, the performance of finger tip recognition was confirmed. Therefore, the user interface can be able to be enhanced significantly in DMS.

• Journal of Integrative Natural Science
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• 제3권4호
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• pp.219-225
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• 2010

On the surface of mesoporous silica thin films (MSTF) which were fabricated by sol-gel approach there are existences of water and three different silanol types including chained, germinal and isolated silanol. Their amounts changes as a function of aging time of used sol solution, as confirmed by FT-IR. The adsorbed water generates ionic carriers such as H+ and OH- and passivates the Si dangling bonds at the interface of silicon wafer-MSTF. The ionic carriers can not only transport across the thickness of thin film to enhance the leakage current but also diffuse toward the silicon wafer-MSTF interface to depassivate Si dangling bonds. On the other hand, chained silanols or germinal silanols promote the moisture adsorption of MSTF and tend to form strongly hydrogen bonded systems with adsorbed water molecules resulting in very high dielectric constant. Isolated silanol, on the contrary, affects less on electrical properties of thin film.

• Journal of Welding and Joining
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• 제23권5호
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• pp.55-60
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• 2005

A precise bonding technique, transmission laser bonding using energy transfer, for polymer micro devices is presented. The irradiated IR laser beam passes through the transparent part and absorbed on the opaque part. The absorbed energy is converted into heat and bonding takes place. In order to optimize the bonding quality, the temperature profile on the interface must be obtained. Using optical measurements of the both plates, the absorbed energy can be calculated. At the wavelength of 1100nm $87.5\%$ of incident laser energy was used for bonding process from the calculation. A heat transfer model was applied for obtaining the transient temperature profile. It was found that with the power of 29.5 mW, the interface begins to melt and bond each other in 3 sec and it is in a good agreement with experiment results. The transmission IR laser bonding has a potential in the local precise bonding in MEMS or Lab-on-a-chip applications.