• Journal of the Korean Magnetics Society
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• v.9 no.4
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• pp.196-202
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• 1999

The magnetic properties and the microstructures of the Mn-Ir/Ni-Fe multilayers with various stacking structures and buffer layer materials have been investigated. The (111) texture of Mn-Ir/Ni-Fe was observed in the top structures with Ta, Zr, or Ti buffer materials. However, all Mn-Ir/Ni-Fe multilayers with top structures exhibit high $H_{ex}$, regardless of the (111) preferred orientation of Mn-Ir film. The samples whose high $H_{ex}$ observed grain-to-grain epitaxial tendency and the large grain of Mn-Ir film at the interface. It can be explained that the $H_{ex}$ does not depend on the (111) texture of the Mn-Ir film and the interface roughness, but depends on the grain size of the Mn-Ir film and the morphology of the interface between the Mn-Ir and the Ni-Fe grains, and the $H_c$ depends on the interface roughness between the Mn-Ir and the Ni-Fe films.

• Journal of Korean Library and Information Science Society
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• v.33 no.4
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• pp.261-281
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• 2002

Interface is a communication mechanism between users md information system. This research suggests the guidelines for the user interface design in the IR system. For the development, we would survey and analyse the major library's IR interface windows. It is included in the guidelines md suggestions that IR's windows, data process icons and display's icons of the information retrieval results. So this research's results are utilized to the standard interface development fur the information services.

• Journal of Magnetics
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• v.6 no.3
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• pp.80-82
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• 2001

We have investigated magnetism of $Fe_2 /Ir_4$(001) superlattice in terms of a first-principles calculation by using an all-electron full-potential linearized augmented plane-wave (FLAPW) method within the generalized gradient approximation (GGA). We considered two magnetic states, the ferromagnetic (FM) and antiferromagnetic (AFM) coupled states between the Fe layers. It was found that the FM state was energetically more stable than the AFM one by 0.166 eV. Calculated magnetic moments of the Fe layers were, in absolute values, 2.45$\mu_B$ and 2.30 $\mu_B$for the FM and AFM states, respectively. We also found that the Ir layers had very small magnetic moments less than 0.1 $\mu_B$ for both magnetic states. In all the magnetic states, the subinterface Ir layers were coupled antiferromagnetically to the interface Ir layers, while the interface Ir layers were always coupled frerromagnetically to the interface Fe layers. These results contradicted to recent experimental reports of magnetically "dead"Fe layers in Fe/Ir superlattices for which the Fe layer thickness was less than two atomic layers. We attributed that the experimentally observed "dead"Fe layers were due to possible interdiffusion between Ir and Fe layers.en Ir and Fe layers.

• Proceedings of the Korea Information Processing Society Conference
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• 2009.11a
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• pp.13-14
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• 2009

Intermediate Representation(IR)은 컴파일러가 Target code 를 생성하기까지의 중간 단계에서 프로그램을 표현하는 수단이다. 본 논문에서는 컴파일러의 IR을 직접 Simulation 해서 각종 profiling information을 수집하여 프로그램의 성능 향상에 도움을 줄 수 있는 IR Simulator를 제안하고자 한다. 더 나아가 IR Simulator를 위한 Data structure와 Interface는 Target Simulation에도 재사용이 가능하도록 고안되었기 때문에 재겨냥성 컴파일러의 Target Simulator를 자동으로 생성하는 연구를 진행하고 있다.

• The Korean Journal of Ceramics
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• v.6 no.1
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• pp.64-67
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• 2000

Reactively sputtered $Pb(Zr,Ti)O_3$(PZT) films on $IrO_2$and Ir were evaluated with particular consideration on interface properties. The $IrO_2$and Ir were previously annealed at $650^{\circ}C$ in $O_2$or $N_2$atmosphere, respectively. There was no appreciable roughening in the interface of the $PZT/IrO_2$respective to that of the PZT/Ir; the rms roughness of $IrO_2$and Ir was about 3nm and 10nm, respectively. The ferroelectric properties of the $PZT/IrO_2$were found to be better than that of the PZT/Ir; however, the leakage current of the $PZT/IrO_2$was slightly larger than that of the PZT/Ir. The $PZT/IrO_2$thin films did not exhibit any fatigue up to $10^{11}$ cycles; the $P^*\;_r-P^r$ value decreased only from 16.6 to 14$\mu$C/$\textrm{cm}^2$ until $10^{12}$ polarization reversals. On the other hand, although thin $IrO_2$layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after $10^9$ polarization reversals.

• Journal of the Korean Society for information Management
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• v.20 no.3
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• pp.177-197
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• 2003

The purpose of this study is to suggest the subject and standards of evaluation on integrated IR interface. For this study, we studied the preceding research about major IR interface models. We took the survey for interface elements which were verified by experts. These interface elements are divided twe viewpoints. One is the cognitive viewpoints which are the page design, content design, site design, output form, usability and aesthelic facet. The other is the objective viewpoints which are page design, dontent design, site design, output for and usability. We found that these evaluation elements have a crediblilty.

• Proceedings of the Korean Ceranic Society Conference
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• 2000.04a
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• pp.154.1-154.1
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• 2000

• Journal of the Korean Magnetics Society
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• v.10 no.6
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• pp.274-279
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• 2000

The microstructure and thermal properties of the Mn-IriNi-Fe exchange biased multi-layers with various buffer layers and stacking structures have been investigated. The H$_{e{\chi}}$ and the T$_{b}$ depend on the Mn-Ir grain size at the interface between the Mn-Ir layer and the Ni-Fe layer, The (111) preferred orientation of Mn-Ir/Ni-Fe on the Ta buffer layer may promote the values of J$_{k}$ and H$_{e{\chi}}$. The samples which produce the Hex have the epitaxial relationship at the interface between the Mn-Ir layer and the Ni-Fe layer due to the generation of misfit dislocation.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.226-226
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• 2016

PHOLED devices which have the structure of ITO/HAT-CN(5nm)/NPB(50nm)/EML(30nm)/TPBi(10nm)/Alq3(20nm)/LiF(0.8nm)/Al(100nm) are fabricated to investigate the green emission profile in EML by using a gasket doping method. CBP and Ir(ppy)3 (2% wt) are co-deposited homogeneously as a background material of EML for green PHOLED, then a 5nm thickness of additionally doped layer by Ir(btp)2 (8% wt) is formed as a profiler of the green emission. The total thickness of the EML is maintained at 30nm while the distance of the profiler from the HTL/EML interface side (x) is changed in 5nm steps from 0nm to 25nm. As shown in Fig. 1, the green (513nm) peak from Ir(ppy)3 is not observed when Ir(btp)2 is also doped homogeneously because Ir(ppy)3 works as an gasket dopant of the Ir(btp)2 :CBP system. Therefore, in this experment, Ir(btp)2 can be used as a profiler of the green emission in CBP:Ir(ppy)3 system. The emission spectra from the PHOLED devices with different x are shown in Fig. 2. In this gasket doping system, stronger red peak means more energy transfer from green to red dopant or higher exciton density by green dopant. To find the green emission profile, the external quantum efficiency (EQE) at 3mA/cm2 for red peaks are calculated. More green light emission at near EML/HBL interface than that of HTL/EML is observed (insert of Fig. 2). This means that the higher exciton density at near EML/HBL interface in homogeneously doped CBP with Ir(ppy)3. As shown in Fig. 3, excitons can be quenched easily to HTL(NPB) because the T1 level of HTL(2.5eV) is relatively lower than that of EML(2.6eV). On the other hand, the T1 level of HBL(2.7eV) is higher than that of EML.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.1
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• pp.36-41
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• 2000

We studied the exchange anisotropy of Ni-Fe/Co-Fe/Mn-Ir/Cu/buffer/Si multilayers using D.C magnetron sputtering technique. Generally, Ni-Fe/Mn-Ir/buffer(Cu)/Si multilayers cannot pin the ferromagnetic layer for the lower exchange biased field. We got $H_{ex}$ ex/ increased by two times, after using Cu/Ta as buffer layer to get larger grain size of Mn-Ir layer and inserting very thin Co-Fe layer between the Ni-Fe layer and the Mn-Ir layer to get improved grain-to-grain epitaxy relation at the interface between Ni-Fe layer and Mn-Ir layer. The variation of $H_{ex}$ by thickness of Mn-Ir layer in ferromagnete/Mn-Ir/buffer/Si multilayers is different to that in Mn-Ir/ferromagnete/buffer/Si multilayers, because the volume distribution of grain size of Mn-Ir layer and the exchange energy at the interface between the Mn-Ir and the ferromagnetic layers is different for stacking sequence.