The Korean Journal of Ceramics

The Korean Ceramic Society (한국세라믹학회)
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Ferroelectric Properties and Comparison between $PZT/IrO_2$ and PZT/Ir

  • Jeon, Min-Seok (Department of Inorganic Materials Engineering, Hanyang University) ;
  • Lee, Hee-Soo (Material Analysis Team, Korea Testing Laboratory, Division of KITECH) ;
  • Kim, Il-Doo (Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology) ;
  • Park, Duck-Kyun (Department of Inorganic Materials Engineering, Hanyang University)
  • Published : 2000.03.01
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Abstract

Reactively sputtered $Pb(Zr,Ti)O_3$(PZT) films on $IrO_2$and Ir were evaluated with particular consideration on interface properties. The $IrO_2$and Ir were previously annealed at $650^{\circ}C$ in $O_2$or $N_2$atmosphere, respectively. There was no appreciable roughening in the interface of the $PZT/IrO_2$respective to that of the PZT/Ir; the rms roughness of $IrO_2$and Ir was about 3nm and 10nm, respectively. The ferroelectric properties of the $PZT/IrO_2$were found to be better than that of the PZT/Ir; however, the leakage current of the $PZT/IrO_2$was slightly larger than that of the PZT/Ir. The $PZT/IrO_2$thin films did not exhibit any fatigue up to $10^{11}$ cycles; the $P^*\;_r-P^r$ value decreased only from 16.6 to 14$\mu$C/$\textrm{cm}^2$ until $10^{12}$ polarization reversals. On the other hand, although thin $IrO_2$layer was formed between PZT and Ir, the PZT/Ir thin films began to undergo fatigue after $10^9$ polarization reversals.

Keywords

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