• Journal of the Korean Society of Manufacturing Technology Engineers
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• v.24 no.4
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• pp.400-406
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• 2015

This study researched the structure of the source of an ion milling machine used to fabricate a scanning electron microscope (SEM) sample. An ion source is used to mill out samples of over 1 mm dimension using a broad ion beam to generate plasma between the anode and cathode using a permanent magnet. To mill the sample in the vacuum chamber, the ion source should be greater than 6 kV for a positive ion current over $200{\mu}A$. To discover the optimum operating conditions for the ion miller, the diameter of the extractor, anode shape, and strength of the permanent magnet were varied in the experiments. A silicon wafer was used as the sample. The sputter yield was measured on the milled surface, which was analyzed using the SEM. The wafer was milled by injecting 1 sccm of argon gas into the 0.5 mTorr vacuum chamber.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.8
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• pp.84-90
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• 2010

In focused ion beam (FIB) fabrication processes the ion beam intensity with Gaussian profile has a drawback for high resolution machining. In this paper, the fabrication method to modify the beam profile at substrate using silt mask is proposed to increase the machining resolution at high current. Slit mask is utilized to block the part of beam and transmit only high intensity portion. A nano manipulator is utilized to handle the silt mask. Geometrical analysis on fabricated profile through silt mask was conducted. By utilizing proposed method, improvement of machining resolution was achieved.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.21 no.4
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• pp.381-387
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• 2008

Neutron production rate in spherically convergent beam fusion(SCBF) device as a portable neutron source strongly depends on the ion current and the grid cathode structure. In this paper, as the process of design and analysis, Design of Experiment(DOE) based on the results by Finite Element Method-Flux Corrected Transport(FEM-FCT) method is employed to calculate the ion current. This method is very useful to find optimal design conditions in a short time. Number of rings, radius of rings, and distance between the grid cathode and center are selected as control factors. From the results in the optimized model, the higher ion current is calculated and deeper potential well is also observed.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.193-193
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• 2011

Strong adhesion of a silicon carbide (SiC) coating to a WC-Co substrate was achieved through an ion beam mixing technique and the corrosion resistance of the SiC coated WC-Co was investigated by means of a potentiodynamic electrochemical test. In a 1 M NaOH solution, the corrosion current density of SiC-coated WC-Co after heat treatment at 500$^{\circ}C$ was about 50 times lower than that for the as-received WC-Co. In addition, the corrosion resistance systematically increases with increasing the SiC coating thickness. On the other hand, for a 0.5 M H2SO4 solution, the corrosion current density for SiC-coated WC-Co was about 3 times lower than that for the as-received WC-Co. We discuss the physical reasons for the changes in the corrosion current density with the different electrolytes.

• Journal of Korean Vacuum Science & Technology
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• v.6 no.2
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• pp.92-96
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• 2002

In this paper, we treated the Ni$_3$Al based alloy samples with intense pulsed ion beams (IPIB) at the beam parameters of 250KV acceleration voltage, 100 - 200 A/cm$^2$ current density and 60 u pulse duration. We simulated the thermal-mechanical process near the surface of Ni$_3$Al based alloy with our STEIPIB codes. The surface morphology and the cross-section microstructures of samples were observed with SEM, the composition of the sample surface layer was determined by X-ray Energy Dispersive Spectrometry (XEDS) and the microstructure on the surface was observed by Transmission Electron Microscope (TEM). The results show that heating rate increases with the current density of IPIB and cooling rate reached highest value less than 150 A/cm$^2$. The irradiation of IPIB induced the segregation of Mo and adequate beam parameter can improve anti-oxidation properly of IC6 alloy. Some craters come from extraneous debris and liquid droplets, and some maybe due to the melting of the intersection region of interphase. Increasing the pulse number enlarges average size of craters and decreases number density of craters.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.430-430
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• 2007

In this study, the nematic liquid crystal (NLC) alignment effects treated on the ZnO thin film layers using ion beam irradiation were successfully studied for the first time. The ZnO thin films were deposited on indium-tin-oxide (ITO) coated glass substrates by rf-sputter and The ZnO thin films were deposited at the three kinds of rf power. The used DuoPIGatron type ion beam system, which can be advantageous in a large area with high density plasma generation. The ion beam parameters were as follows: energy of 1800 eV, exposure time of 1 min and ion beam current of $4\;mA/cm^2$ at exposure angles of $15^{\circ}$, $30^{\circ}$, $45^{\circ}$, and $60^{\circ}$. The homogeneous and homeotropic LC aligning capabilities treated on the ZnO thin film surface with ion beam exposure of $45^{\circ}$ for 1 min can be achieved. The low pretilt angle for a NLC treated on the ZnO thin film surface with ion beam irradiation for all incident angles was measured. The good LC alignment treated on the ZnO thin film with ion beam exposure at rf power of 150 W can be measure. For identifying surfaces topography of the ZnO thin films, atomic force microscopy (AFM) was introduced. After ion beam irradiation, test samples were fabricated in an anti-parallel configuration with a cell gap of $60{\mu}m$.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.236-243
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• 2009

Proton Engineering Frontier Project (PEFP) has supplied the metal ions to users by using an installed metal ion implanter of 120 keV. At present a feasibility study is being performed for a cobalt ion implantation. For a cobalt ion extraction we studied to sustain the high temperature($648^{\circ}C$) for metal ions vaporization from a cobalt chloride powder by using an alumina crucible in the ion source. The temperature condition of the crucible was satisfied with the plasma generation at the arc current of 120V and EHC power of 250W. The extracted beam current of $Co^+$ ions was dependent on the arc current in the plasma. The maximum beam current was $100{\mu}A$ at 0.18A of the arc current. The 3 peak currents of the extracted ions such as $Co^+$, $CoCl^+$ and $Cl^+$ were obtained by adjusting a mass analyzing magnet and the $Co^+$ ion beam peak current fraction as around 70% in the sum of the peak currents. The fluence of the implanted cobalt ions at the $10{\mu}A$ of the beam current and 90 minutes of the implantation time into an aluminum sample as measured around $1.74{\times}10^{17}#/cm^2$ by a quantitative analysis method of RBS (Rutherford Backscattering Spectrometry).

• Transactions of the Korean Society of Machine Tool Engineers
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• v.16 no.2
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• pp.70-77
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• 2007

The application of focused ion beam(FIB) technology has been broadened in the fabrication of nanoscale regime. The extended application of FIB is dependent on complicated reciprocal relation of operating parameters. It is necessary for successful and efficient modifications on the surface of silicon substrate. The primary effect by Gaussian beam intensity is significantly shown from various aperture size, accelerating voltage, and beam current. Also, the secondary effect of other process factors - dwell time, pixel interval, scan mode, and pattern size has affected to etching results. For the process analysis, influence of the secondary factors on FIB micromilling process is examined with respect to sputtering depth during the milling process in silicon material. The results are analyzed by the ratio of signal to noise obtained using design of experiment in each parameter.

• Journal of the Korean Vacuum Society
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• v.4 no.S2
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• pp.131-138
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• 1995

The broad beam ion sources of hot filament plasma type have widely used for modifications of materials and thin films, and the new type intensive current broad beam metal ion source including reactive gaseous ion beams is needed for preparing the hard coating films such as DLC, $\beta-C_3N_4$ Carbides, Nitrides, Borides etc. Now a electorn beam evaporation(EBE) broad beam metal ion source has been developed for this purpose in our lab. CN film has been formed by the EBE ion source. Study of the CN film shows that it has high hardness(HK=5800kgf/$\textrm {mm}^2$)and good adhesion. This method can widely changes the ratio of C/N atom's concentrations from 0.14 to 0.6 and has high coating rate. The low energy pocket ion source which was specially designed for surface texturing of medical silicon rubber was also developed. It has high efficiency and large uniform working zone. Both nature texturing and mesh masked texturing of silicon rubbers were performed. The biocompatibility was tested by culture of monocytes, and the results showed improved biocompatibility for the treated silicon rubbers. In addition, the TiB2 film synthesized by IBED is being studied recently in our lab. In this paper, the results which include the hardness, thickness of the films and the AES, XRD analysis as well as the tests of the oxidation of high temperature and erosion will be presented.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2010.05a
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• pp.559-560
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• 2010