• 한국표면공학회지
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• 제29권5호
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• pp.556-562
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• 1996

Carbon nitride (CN) films were synthesized on silicon substrates by a combined ion-beam and laser-ablation method under various conditions; ion-beam energy and ion-beam current were varied. Raman spectroscopy and spectroscopic ellipsometry (SE) were employed to characterize respectively the structural and the optical properties of the CN films. Raman spectra show that all the CN films are amorphous independent of the ion-beam current and the ion-beam energy. Refractive indices, extinction coefficients and optical band gaps which were determined from the measured SE spectra exhibit a significant dependence on the synthesis conditions. Especially, the decrease of the refractive indices and the shrinkage of the optical band gap is noticeable as the ion-beam current and/or the ion-beam energy increase.

• 한국정밀공학회지
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• 제28권3호
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• pp.383-388
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• 2011

The cold hollow cathode gas ion source is under development for multi aperture focused ion beam (FIB) system. In this paper, we describe the cold hollow cathode ion source design and the general ion source performance using Ar gas. The glow discharge characteristics and the ion beam current density at various operation conditions are investigated. This ion source can generate maximum ion beam current density of approximately 120 mA/$cm^2$ at ion beam potential of 10 kV. In order to effectively transport the energetic ions generated from the ion source to the multi-aperture focused ion beam(FIB) system, the einzel lens system for ion beam focusing is designed and evaluated. The ions ejected from the ion source can be forced to move near parallel to the beam axis by adjusting the potentials of the einzel lenses.

• Nuclear Engineering and Technology
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• 제35권3호
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• pp.226-233
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• 2003

The discharge characteristics of a prototype ion source was investigated, which was developed and upgraded for the NBI (Neutral Beam Injection) heating system of KSTAR (Korea Superconducting Tokamak Advanced Research). The ion source was designed for the arc discharge of magnetic bucket chamber with multi-pole cusp fields. The ion source was discharged by the emission-limited mode with the control of filament heating voltage. The maximum ion density was 4 times larger than the previous discharge controlled by a space-charge-limited mode with fully heated filament. The plasma (ion) density and arc current were proportional to the filament voltage, but the discharge efficiency was inversely proportional to the operating pressure of hydrogen gas. The maximum ion density and arc current were obtained with constant arc voltage ($80{\sim}100V$), as $8{\times}10^{11}cm^{-3}$ and 1200 A, respectively. The estimated maximum beam current was about 35 A, extracted by the accelerating voltage of 80kV.

• Journal of Korean Vacuum Science & Technology
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• 제6권2호
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• pp.55-57
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• 2002

Metal-vapor-vacuum-arc ion source is an ideal source for both high current metal ion implanter and high current plasma thin-film deposition systems. It uses the direct evaporation of metal from surface of cathode by vacuum arc to produce a very high flux of ion plasmas. The MEVVA ion source, the high-current metal-ion implanter and high-current magnetic-field-filtered plasma thin-film deposition systems developed in Beijing Normal University are introduced in this paper.

• Nuclear Engineering and Technology
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• 제56권1호
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• pp.70-77
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• 2024

A low energy ion irradiation system based on the deuterium arc ion source with a high perveance of 1 µP for a single extraction aperture has been successfully developed for the investigation of ion irradiation on plasma-facing components including the first mirror of plasma optical diagnostics system. Under the optimum operating condition for mirror testing, the ion source has a beam energy of 200 eV and a current density of 3.7 mA/cm². The ion source comprises a magnetic cusp-type plasma source, an extraction system, a target system with a Faraday cup, and a power supply control system to ensure stable long time operation. Operation parameters of plasma source such as pressure, filament current, and arc power with D₂ discharge gas were optimized for beam extraction by measuring plasma parameters with a Langmuir probe. The diode electrode extraction system was designed by IGUN simulation to optimize for 1 µP perveance. It was successfully demonstrated that the ion beam current of ~4 mA can be extracted through the 10 mm aperture from the developed ion source. The target system with the Faraday cup is also developed to measure the beam current. With the assistance of the power control system, ion beams are extracted while maintaining a consistent arc power for more than 10 min of continuous operation.

• 한국자기학회지
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• 제5권5호
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• pp.538-542
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• 1995

The etching characteristics of magnetic thin films of permalloy and Fe-based alloys are investigated. The thin films are fabricated by rf magnetron sputtering and the substrates used are silicon and glass. Etching is done by ion beam technique and the main process parameters investigated are beam voltage, beam current and accelerating voltage. The etch rate of the magnetic films is proportional to the beam current, but it is not directly related to the accelerating voltage and beam voltage. The dependence of etch rate on the process parameters can be explained by ion current density. It is found that the ion beam etching is effective in obtaining well-developed micro-patterns on the permalloy and Fe- based magnetic thin films.

• Nuclear Engineering and Technology
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• 제23권4호
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• pp.438-443
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• 1991

각확산도가 작은 $He^+$ 이온빔 인출전류를 최대로 얻기 위하여 Duoplasmatron 이온원의 동작특성을 조사하였다. 이온원의 기체압력, 아크전류. 전자석 전류, 인출전압등을 변화시키면서 인출되는 $He^+$ 이온빔 전류의 변화를 관찰하였다. 열음극으로는 Ni망위에 BaO와 SrO의 혼합물을 코팅한 산화물 필라멘트를 사용하였으며, 그것의 평균수명은 약 100시간이었다. 인출전류는 아크전류에 선형적으로 비례했다 이온원 전자석전류를 증가시킴에 따라 인출전류는 증가하였지만 빔의 각확산도가 커졌다. 최대의 인출전류는 0.084 Torr의 이온원 압력에서 얻어졌다. 인출전류는 이론에서와 마찬가지로 인출전압의 3/2승에 비례하였다. 5.72 kV의 인출전압에서는 최적인출조건하에서 50 $\mu$A의 인출전류가 얻어졌다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1997년도 하계학술대회 논문집 E
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• pp.1752-1754
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• 1997

The Kaufman type ion beam source with focusing lens was prepared to measure $\gamma$-coefficient of MgO thin film. Initial discharge of the system was started with the discharge voltage of 25V, the cathode filament current of 5.5A at the constant magnetic field of 150G. The system shows the maximum ion current density of $120{\mu}A/cm^2$, energy dispersion of 200eV and beam divergence of $30^{\circ}$ under the condition of Ar gas pressure $2.5{\times}10^{-4}Torr$, the beam voltage of 500V, the discharge voltage of 90V, the accelerator voltage of -200V and the cathode filament current of 6.1A. When the focusing lens was installed onto the ion beam source, the spreadness diameter of ion beam was about 10mm.

• Nuclear Engineering and Technology
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• 제36권4호
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• pp.357-363
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• 2004

A prototype long pulse ion source was developed, and the beam extraction experiments of the ion source were carried out at the Neutral Beam Test Stand (NBTS) of the Korea Superconducting Tokamak Advanced Research (KSTAR). The ion source consists of a magnetic bucket plasma generator, with multi-pole cusp fields, and a set of tetrode accelerators with circular apertures. Design requirements for the ion source were a 120kV/65A deuterium beam and a 300 s pulse length. Arc discharges of the plasma generator were controlled by using the emission-limited mode, in turn controlled by the applied heating voltage of the cathode filaments. Stable and efficient arc plasmas with a maximum arc power of 100 kW were produced using the constant power mode operation of an arc power supply. A maximum ion density of $8.3{\times}10^{11}\;cm^{-3}$ was obtained by using electrostatic probes, and an optimum arc efficiency of 0.46 A/kW was estimated. The accelerating and decelerating voltages were applied repeatedly, using the re-triggering mode operation of the high voltage switches during a beam pulse, when beam disruptions occurred. The decelerating voltage was always applied prior to the accelerating voltage, to suppress effectively the back-streaming electrons produced at the time of an initial beam formation, by the pre-programmed fast-switch control system. A maximum beam power of 0.9 MW (i.e. $70\;kV{\times}12.5\;A$) with hydrogen was measured for a pulse duration of 0.8 s. Optimum beam perveance, deduced from the ratio of the gradient grid current to the total beam current, was $0.7\;{\mu}perv$. Stable beams for a long pulse duration of $5{\sim}10\;s$ were tested at low accelerating voltages.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.259-259
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• 2008

The LTCC (Low Temperature Co-fired Ceramic) technology meets the requirements for high quality microelectronic devices and microsystems application due to a very good electrical and mechanical properties, high reliability and stability as well as possibility of making integrated three dimensional microstructures. The wet process, which has been applied to the etching of the metallic thin film on the ceramic substrate, has multi process steps such as lithography and development and uses very toxic chemicals arising the environmental problems. The other side, Plasma technology like ion beam sputtering is clean process including surface cleaning and treatment, sputtering and etching of semiconductor devices, and environmental cleanup. In this study, metallic multilayer pattern was fabricated by the ion beam etching of Ti/Pd/Cu without the lithography. In the experiment, Alumina and LTCC were used as the substrate and Ti/Pd/Cu metallic multilayer was deposited by the DC-magnetron sputtering system. After the formation of Cu/Ni/Au multilayer pattern made by the photolithography and electroplating process, the Ti/Pd/Cu multilayer was dry-etched by using the low energy-high current ion-beam etching process. Because the electroplated Au layer was the masking barrier of the etching of Ti/Pd/Cu multilayer, the additional lithography was not necessary for the etching process. Xenon ion beam which having the high sputtering yield was irradiated and was used with various ion energy and current. The metallic pattern after the etching was optically examined and analyzed. The rate and phenomenon of the etching on each metallic layer were investigated with the diverse process condition such as ion-beam acceleration energy, current density, and etching time.