• Title/Summary/Keyword: IMD 특성

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Design and Fabrication of High Power Amplifiers for IMT-2000 (IMT-2000용 기지국용 대전력 증폭기의 설계 및 제작)

  • 이재윤;정성찬;박천석
    • Proceedings of the IEEK Conference
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    • 2000.11a
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    • pp.321-324
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    • 2000
  • 본 논문은 전력증폭기 정합회로 설계시 주어진 임피던스를 가지고 Ansoft사의 Ensemble을 이용해 기본적인 정합회로를 설계하였다. MHL21336 , MRF21030 ,MRF21125로 대전력 증폭기를 설계 및 제작하여 측정해본 결과 전체 이득이 52㏈, 대역폭 안에서 이득 평탄도는 ±0.37㏈ 정도, 출력이 PEP 5l㏈m에서 -30㏈c의 결과를 얻었다. Bias 전류에 대한 5㎒ Tone-space IMD 특성곡선을 측정해 본 결과 기지국용 대전력 증폭기로 사용할 수 있음을 보였다.

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High-Power Cartesian Feedback Transmitter Design for 860 MHz Band (860 MHz 대역 고출력 Cartesian 피드백 송신기 설계)

  • Kim, Min-Su;Cho, Han-Jin;Ahn, Gun-Hyun;Jung, Sung-Chan;Park, Hyun-Chul;Van, Ju-Ho;Jeong, Jong-Hyuk;Kwon, Sung-Wook;Lim, Kyung-Hoon;Song, Sung-Chan;Klm, Jae-Young;Yang, Youn-Goo
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.18 no.2 s.117
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    • pp.183-190
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    • 2007
  • This paper presents the design of 860 MHz band transmitter for improving power amplifier's linearity using Cartesian feedback method. For eliminating the effects of gain, phase mis-match, and DC offset, we estimate the property variations using ADS software. The implemented Cartesian feedback transmitter exhibits IMD3 of -54 dBc at an output power of 43 dBm and this result shows that the linearity is improved for 22.4 dB, compared with the test of the power amplifier without Cartesian feedback system. Thus, we verify that the proposed Cartesian feedback transmitter can be applied to narrow-band transmitter systems.

Improved Power Performances of the Size-Reduced Amplifiers using Defected Ground Structure (결함 접지 구조를 이용하여 소형화한 증폭기의 개선된 전력 성능)

  • Lim, Jong-Sik;Jeong, Yong-Chae;Han, Jae-Hee;Lee, Young-Taek;Park, Jun-Seok;Ahn, Dal;Nam, Sang-Wook
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.13 no.8
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    • pp.754-763
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    • 2002
  • This paper discusses the improved power performances of the size-reduced amplifier using defected ground structure (DGS). The slow-wave effect and enlarged electrical length occur due to the additional equivalent circuit elements of DGS. Using these properties, it is possible to reduce the length of transmission lines in order to keep the same original electrical lengths by inserting DGS on the ground plane. The matching and performances of the amplifier are preserved even after DGS patterns have been inserted. While there is no loss in the size-reduced transmission lines at the operating frequency, but there exists loss to some extent at harmonic frequencies. This leads to the more excellent inherent capability of harmonic rejection of the size-reduced amplifier. Therefore, it is expected tile harmonics of the size-reduced amplifier are smaller than those of the original amplifier. The measured second harmonic, third order intermodulation distortion (IMD3), and adjacent channel power ratio (ACPR) of the size-reduced amplifier are smaller than those of the original amplifier by 5 dB, 2~6 dB, and 1~4 dB, respectively, as expectation.

Design and Fabrication of Isolator for Mobile Repeater (이동통신 중계기용 아이솔레이터의 설계 및 제작)

  • Jung, Seung-Woo;Jeong, Yun-Hwan;Park, Noh-Joon;Kang, Young-Jin;Choi, U-Sung
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.11 no.9
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    • pp.1642-1649
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    • 2007
  • The lumped element isolators with temperature compensation magnetic circuits were designed in this paper. Isolators for mobile repeater at each band of K-PCS, GSM1900, W-CDMA, WiBro were fabricated by using optimum parameters of EM simulation, Form the results of this study, first of all, insertion loss at K-PCS band was below 0.2 dB and return loss was over 25dB. The bandwidth in isolation 23dB was found 30 MHz. Secondly, the figures of both losses at GSM1900 were 0.25dB and 23dB, respectively. The measured bandwidth in isolation 30dB was 60MHz. Thirdly, the losses at W-CDMA band were 0.15dB and 25dB. The bandwidth in isolation 24.8dB was found 60Mhz. Finally, the figures of both losses at Wibro band were 0.25dB and 23dB, respectively. The measured bandwidth in isolation 22.1dB was 100Mhz. In addition, the results of measured IMD were shown from 76.4dBc to 80.1dBc.

The Design of Predistortion Linearizer using the Low Frequency Intermodulation Terms of Harmonic Generator (Harmonic Generator의 저주파 혼변조 신호 성분을 이용한 전치왜곡 선형화기 설계)

  • Kim, Young;Chang, Ik-Soo;Jang, Hyung-Soon
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.39 no.9
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    • pp.28-34
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    • 2002
  • In this paper, a new type predistorter using a low frequency intermodulation signals terms of harmonic generator is proposed. A vector modulator, in which fundamental signal is modulated with low frequency intermodulation signals derived from harmonic generator, generates predistorted third and fifth IM components. Using predistorted signals, intermodulation distortion signals of power amplifier suppressed. The suggested predistorter has been manufactured to operate in Korean PCS base-station transmitting band (1840~1870MHz). The test results show that the third IMD signal level is reduced more than 20dB and the fifth IMD signal is reduced about 10dB for CW two-tone signals. The predistorter improves the Adjacent Channel Power Ratio (ACPR) more than 10dB for CDMA (IS-95) signals.

A 5Watt Power Amplifier Module Using Gallium Nitride Device (질화갈륨소자를 이용한 5Watt급 전력증폭기 모듈)

  • Park, Chun-Seon;Han, Sang-Min;Lim, Jong-Sik;Ahn, Dal;An, Chong-Chul;Park, Ung-Hee
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.9 no.5
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    • pp.1193-1200
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    • 2008
  • This paper describes a developed 5Watt power amplifier module fer mobile communication system using Gallium Nitride (GaN) devices. Three amplification stages such as pre-amplifier, driver amplifier, and power amplifier have been fabricated and measured separately in advance for incorporating the total power amplifier module and estimating the performances. In addition, a defected ground structure is combined with the output stage of the power amplifier module for improving harmonic rejection and adjacent channel power (ACP) characteristics. The measured performances of the GaN power amplifier module include 58dB,min of gain, 37dBm,min of output power, 50dBc,min of harmonic rejection, 35dBc,min of IMD3 for 2-tone input, and 35dBc,min of ACP at 2.1GHz frequency band.

A Design of Predistortion Linearizer Using Second Harmonic Signals (2차 고조파 신호를 이용한 전치 왜곡 선형화기 설계)

  • Kim Sung-Yong;Kim Young
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.16 no.12 s.103
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    • pp.1239-1245
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    • 2005
  • In this paper, a new predistortion linearizer using second harmonic components feedforwarding is proposed. The harmonic generator of the proposed predistorter that consists of a small signal amplifier extracts second harmonic signals. A vector modulator that modulate fundamental signal with second harmonic signals, generates the inverse third order intermodulation distortion signals and controls amplitude/phase of them with modulation factors. As a result, this linearizer is suppressed IMD3 signals of power amplifier effectively. The test results show that the third order IMD of power amplifier is suppressed more than 20 dB for CW two-tone signals. Also, it's improved the adjacent channel power ratio(ACPR) more than 5 dB for CDMA(IS-95) 4FA signals.

Design and Fabrication of a GaAs MESFET MMIC Transmitter for 2.4 GHz Wireless Local Loop Handset (2.4 GHz WLL 단말기용 GaAs MESFET MMIC 송신기 설계 및 제작)

  • 성진봉;홍성용;김민건;김해천;임종원;이재진
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.11 no.1
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    • pp.84-92
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    • 2000
  • A GaAs MESFET MMIC transmitter for 2.4 GHz wireless local loop handset is designed and fabricated. The transmitter consists of a double balanced active mixer and a two stage driver amplifier with voltage negative feedback. In particular, a pair of CS-CG(common source-common gate) structure compensates the reduction in dynamic range caused by unbalanced complementary IF input signals. And to suppress the leakage local power at RF port, the mixer is designed by using phase characteristic between the ports of MESFET. At the bias condition of 2.7 V and 55.2 mA, the fabricated MMIC transmitter with chip dimensions of $0.75\times1.75 mm^2$ obtains a measured conversion gain of 38.6 dB, output $P_{idB}$ of 11.6 dBm, and IMD3 at -5 dBm RF output power of -31.3 dBc. This transmitter is well suited for WLL handset.

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Narrow-Band Analog Pre-Distortion Linearization Technique using UHF 400 MHz Band 20 W Power Amplifier (UHF 400 MHz 대역 20 W급 전력증폭기를 이용한 협대역 아날로그 전치왜곡 선형화 기법)

  • Ha, Jung-wan;Kim, Kang-san;Kim, Hyo-Jong
    • Journal of Advanced Navigation Technology
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    • v.23 no.2
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    • pp.179-185
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    • 2019
  • In this paper, we have studied narrow-band analog pre-distortion linearization technique using UHF 400 MHz band 20 W power amplifier. The analog pre-distorter used the SC1894 radio frequency power amplifier linearizer(RFPAL) provided by MAXIM Corp and through the look-up table technique confirmed the intermodulation distortion(IMD) performance and the adjusted channel leakage ratio(ACLR) improvement for bandwidth below 1 MHz which does not operate on existing chips. In the 400 MHz (400 ~ 500 MHz) band, IMD performance and the ACLR improvement of up to 17.46 dB based on 1-channel offset and up to 16.6 dB based on 2-channel offset were confirmed. In the system requiring the same linearity, we confirmed power efficiency improvement of 12.41% at output power of over 40 W.

Characteristic Analysis of Doherty Amplifier for Efficiency Improvement of Power Amplifier (전력증폭기의 효율 개선을 위한 도허티증폭기의 특성분석)

  • Lee Taek-Ho;Jung Sung-Chan;Park Cheon-Seok
    • 한국정보통신설비학회:학술대회논문집
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    • 2004.08a
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    • pp.23-26
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    • 2004
  • 본 논문은 전력증폭기의 효율을 개선하기 위한 도허티증폭기의 특성 분석에 관한 것이다. 도허티증폭기의 특성을 분석하기 위해 2-tone신호와 WCDMA신호를 사용하였고 180W PEP LDMOSFET을 사용하였다. 제작된 도허티증폭기는 출력 전력 20W에서 약 10%정도의 효율개선을 나타냈지만 선형성이 저하되는 특성을 나타내었다. 저하된 선형성을 개선시키기 위해 carrier 증폭기(Amp. A)와 peaking 증폭기(Amp. B)를 각각 변화하였으며, carrier 증폭기는 높은 PEP(Peak Envelope Power)와 적은 Id(drain current)가 되도록 하였고, peaking 증폭기는 높은 이득과, 낮은 gate bias에서 IMD(Intermodulation Distortion)가 상쇄되도록 하였다. 최종 측정 결과 출력전력 20W에서 선형성은 class AB증폭기와 비교하여 유사한 결과를 얻었으며, 효율은 약 10% 이상의 개선을 얻을 수 있었다.

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