• 한국진공학회:학술대회논문집
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• 한국진공학회 2015년도 제49회 하계 정기학술대회 초록집
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• pp.86.1-86.1
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• 2015

As the feature size of Si-based semiconductor shrinks to nanometer scale, we are facing to the problems such as short channel effect and leakage current. One of the solutions to cope with those issues is to bring III-V compound semiconductors to the semiconductor structures, because III-V compound semiconductors have much higher carrier mobility than Si. However, introduction of III-V semiconductors to the current Si-based manufacturing process requires great challenge in the development of process integration, since they exhibit totally different physical and chemical properties from Si. For example, epitaxial growth, surface preparation and wet etching of III-V semiconductors have to be optimized for production. In addition, oxidation mechanisms of III-V semiconductors should be elucidated and re-growth of native oxide should be controlled. In this study, surface preparation methods of various III-V compound semiconductors such as GaAs, InAs, and GaSb are introduced in terms of i) how their surfaces are modified after different chemical treatments, ii) how they will be re-oxidized after chemical treatments, and iii) is there any effect of surface orientation on the surface preparation and re-growth of oxide. Surface termination and behaviors on those semiconductors were observed by MIR-FTIR, XPS, ellipsometer, and contact angle measurements. In addition, photoresist stripping process on III-V semiconductor is also studied, because there is a chance that a conventional photoresist stripping process can attack III-V semiconductor surfaces. Based on the Hansen theory various organic solvents such as 1-methyl-2-pyrrolydone, dimethyl sulfoxide, benzyl alcohol, and propylene carbonate, were selected to remove photoresists with and without ion implantation. Although SPM and DIO3 caused etching and/or surface roughening of III-V semiconductor surface, organic solvents could remove I-line photoresist without attack of III-V semiconductor surface. The behavior of photoresist removal depends on the solvent temperature and ion implantation dose.

• 한국미생물·생명공학회지
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• 제42권3호
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• pp.238-248
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• 2014

The metalloid arsenic (Z = 33) is considered to be a significant potential threat to human health due to its ubiquity and toxicity, even in rural regions. In this study a rural region contaminated with arsenic, located at longitude $85^{\circ}$ 32'E and latitude $25^{\circ}$ 11'N, was initially examined. Arsenic tolerant bacteria from the rhizosphere of Amaranthas viridis were found and identified as Bacillus licheniformis through 16S rRNA gene sequencing. The potential for the uptake and removal of arsenic at 3, 6 and 9 mM [As(V)], and 2, 4 and 6 mM [As(III)], and for the reduction of the above concentrations of As(V) to As(III) by the Bacillus licheniformis were then assessed. The minimal inhibitory concentrations (MIC) for As(V) and As(III) was determined to be 10 and 7 mM, respectively. At 3 mM 100% As(V) was uptaken by the bacteria with the liberation of 42% As(III) into the medium, whereas at 6 mM As(V), 76% AS(V) was removed from the media and 56% was reduced to As(III). At 2 mM As(III), the bacteria consumed 100%, whereas at 6 mM, the As(III) consumption was only 40%. The role of pH was significant for the speciation, availability and toxicity of the arsenic, which was measured as the variation in growth, uptake and content of cell protein. Both As(V) and As(III) were most toxic at around a neutral pH, whereas both acidic and basic pH favored growth, but at variable levels. Contrary to many reports, the total cell protein content in the bacteria was enhanced by both As(V) and As(III) stress.

• 대한화학회지
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• 제18권4호
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• pp.259-266
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• 1974

과염소산 수용액 중에서 바나듐(III)이온이 산소에 의해 산화되는 반응에 대해서 pH 범위1∼3에 걸쳐 $H_2O^{18}$을 이용한 동위원소 실험을 행했다. 반응속도식$-\frac{d[V(III)]}{dt}=k_1\frac{[O_2][V(III)]}{[H^+]}$가 성립되는 높은 히드로늄이온 농도(pH<∼2)에서는 반응생성물 $VO^{2+}$이온의 산소가 모두 산소분자에서 유래된다는 결과를 얻었다. 반면 $-\frac{d[V(III)]}{dt}=K_2\frac{[O_2][V(III)]^2}{[Ht]^2}$의 속도식이 성립하는 pH>∼2 범위에서의 추적자 실험은 바나딜이온의 산소의 50%가 산소분자에서 온다는 결과를 주었다. 반응속도론의 결과 화학량론적 결정과 아울러 동위원소 실험결과를 고려하면 다음과 같은 반응 메카니즘을 제안할 수 있다.$$V^{3+}\rightleftarrows VOH^{2+} + H+, 2VOH^{2+}\rightleftarrowsV_2(OH)_2^{4+}$$$$ 낮은\PH:\ VOH^{2+}+O_2 \rightarrow V(O_2)OH^{2+}, V(O_2)OH^{2+}+VOH^{2+}\rightarrow 2VO^{2+}+H_2O_2$$$$ 높은\PH:\V2(OH)_2^{4+}+O_2\rightarrow2VO^{2+}+H_2O_2, V_2(OH)_2^{4+}+H_2O_2\rightarrow2VO^{2+}+2H_2O$$

• Journal of Microbiology and Biotechnology
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• 제14권5호
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• pp.891-900
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• 2004

UDP-N-Acetylglucosamine(GlcNAc):$\beta$1,4-D-mannoside$\beta$-l ,4N-acetylglucosaminyltransferase-III (GnT-III) and UDP-N-GlcNAc:$\alpha$-6-D-mannosid$\beta$-1,6N-acetylglucosaminyltransferase-V(GnT - V) activities were determined in human hepatoma cell lines and metastatic colon cancer cells, and their activities were compared with those of normal liver cells and fetal hepatocytes. GnT-III activities were higher than those of GnT-V in hepatic carcinoma cells. When the two enzyme activities were assayed in highly metastatic colon cancer cells, GnT - V activities were much higher than those of GnT-III. When GlcN, GlcN-biant-PA and UDP-GlcNAc were used as substrates, the enzymes displayed different kinetic properties between hepatic and colon cancer cells, depending on their metastatic potentials. Normal cells of two origins had characteristically very low levels of GnT-III and -V activities, whereas hepatoma and colon cancer cells contained high levels of activities. These data were supported by RT-PCR and Northern blot analyses, showing that the expression of GnT-III and -V mRNAs were increased in proportion to the enzymatic activities. The increased GnT-III, md -V activities were also correlated with increased glycosylation of the cellular glycoproteins in hepatoma and colon cancer cells, as examined by lectin blotting analysis by using wheat germ glutinin (WGA), erythroagglutinating phytohemagglutinin (E-PHA), leukoagglutinating phytohemagglutinin (L-PHA), and concanavalin A (Con A). Treatment with retinoic acid, a differentiation agent, resulted in decreases of both GnT-III and -V activities of HepG2 and HepG3 cells. In colon carcinoma cells, however, treatment with retinoic acid resulted in a reduction of GnT-V activity, but not with GnT-III activity. Although the mechanism underlying the induction of these mzymes is unclear, oligosaccharides in many glycoproteins have been observed of cancer cells.

• 전자통신동향분석
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• 제36권3호
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• pp.23-33
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• 2021

Two main technologies of III-V/Si laser diode for optical communication, direct epitaxial growth, and wafer bonding were studied. Until now, the wafer bonding has been vigorously studied and seems promising for the ideal III-V/Si laser. However, the wafer bonding process is still complicated and has a limit of mass production. The development of a concise and innovative integration method for silicon photonics is urgent. In the future, the demand for high-speed data processing and energy saving, as well as ultra-high density integration, will increase. Therefore, the study for the hetero-junction, which is that the III-V compound semiconductor is directly grown on Si semiconductor can overcome the current limitations and may be the goal for the ideal III-V/Si laser diode.

• 분석과학
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• 제13권2호
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• pp.189-193
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• 2000

수소화물 발생-유도 결합 플라스마 원자 방출법(HG-lCP-AES)을 이용하여 폐광산 광미 시료중의 As(III)와 As(V)를 동시 정량하였다. 폐기물 공정 시험법에 준하여 용출한 폐광간 광미 시료 중에서 전체 비소는 1M KI를 사용하여 As(V)를 As(III)로 예비 환원 후 2% $NaBH_4$와 6M HCl로 분석하였고, As(III)는 pH 5-6의 citrate/citric acid 완충 용액을 사용하여 선택적으로 정량한 후 전체 비소의 양에서 As(III)의 양을 보정하여 As(V)를 정량하였다. 그 결과 폐광간 광미 시료에서 용출된 전제 비소 중에서 As(V)의 함량이 90% 이상이었다.

• Biotechnology and Bioprocess Engineering:BBE
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• 제9권1호
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• pp.47-51
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• 2004

Ceramide III was prepared by the cultivation of Saccharomyces cerevisiae. Ceramide III was partitioned from the cell extracts by solvent extraction and analyzed by Normal Phase High Performance Liquid Chromatography (NP-HPLC) using Evaporative Light Scattering Detector (ELSD). We experimentally determined the mobile phase composition to separate ceramide III with NP-HPLC. Three binary mobile phases of n-hexane/ethanol, n-hexane/lsoprophyl Alcohol(IPA) and n-hexane/n-butanol and one ternary mobile phase of n-hexane/IPA/methanol were demonstrated. For the binary mobile phase of n-hexane/ethanol, the first mobile phase composition, 95/5(v/v), was step-increased to 72/23(v/v) at 3 min. In the binary mobile phase, the retention time of ceramide III was 7.87min, while it was 4.11 min respectively in the ternary system, where the mobile phase composition of n-hexane/IPA/methanol, 85/7/8(v/v/v), was step-increased to 75/10/15(v/v/v) at 3 min. However, in the ternary mobile phase, the more peak area of ceramide III was observed.

• 한국지하수토양환경학회지:지하수토양환경
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• 제13권1호
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• pp.52-59
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• 2008

흡착은 비소가 토양에 축적되는 주요 과정이다. 그러므로 토양에서 비소종의 흡착 및 탈착 특성을 이해하는 것은 비소종의 거동을 예측하고 토양으로부터 비소를 제거하는 적절한 정화방법을 수립하기 위해 필수적이다. 본 연구에서는 칼럼을 이용하여 토양에서 As(III)와 As(V)의 흡착 및 탈착실험을 수행하였다. As(III)에 대한 실험은 환원환경에서, 그리고 As(V)에 대한 실험은 산화환경에서 실시했다. 실험이 진행되는 동안 대부분의 As(III)는 그 산화상태를 유지하였다. As(III)의 흡착 및 탈착속도는 As(V)보다 빨랐다. 칼럼실험에서 비소종의 흡착 및 탈착반응은 완전히 가역적은 아니었다. 또한 As(V)는 회분식실험에서보다 칼럼실험에서 더 빠르게 토양에 흡착되었다.

• 제어로봇시스템학회:학술대회논문집
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• 제어로봇시스템학회 2000년도 제15차 학술회의논문집
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• pp.31-31
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• 2000

In this paper, Ive design and test the V/F converter for KSR-III INS using commertial INC, VFC110, AD652. The test result shows that performance of AD652 is better than that of VFC110. Through the calibration of V/F converter, we show that the designed V/F converter has a good performance and is usable for KSR-III.

• 대한환경공학회지
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• 제28권7호
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• pp.731-737
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• 2006

미국 Oak Ridge 연구소 관리지역에서 Inceptisol(Inc) 및 Utisol(Ult)이 지배적으로 분포된 토양층의 A- 및 B-층으로부터 채취한 물리화학적 특성이 잘 규명된 4종의 토양시료에 As(III) 및 As(V)를 흡착시킨 후 토양시료에 대한 추출용액의 비 1:100 조건에서 pH를 1.5로 고정시킨 생리학적 추출용액을 이용한 추출시험을 통하여 초기 노화조건에서의 비소의 생접근도(bioaccessibility) 및 As(III) 산화정도와 6개월간의 노화시간 경과에 따른 비소의 생접근도를 조사하였다. 토양시료에 As(C)를 주입시킨 후 48시간이 경과되었을 때 모든 토양시료에서, 특히 Ult-B, 빠르고도 강한 As(V)의 고정화(sequestration) 현상이 일어났다. 그렇지만 3개월이 지난 후에는 As(V)의 고정화에 큰 변화가 없었다. 동일한 토양시료에 As(III)를 인위적으로 오염시킨 후 48시간이 경과되었을 때 Inc-A 및 Ult-A 토양시료에서는 상당 분율의 As(III)가 As(V)로 산화되었다. 이러한 As(III)의 산화정도는 토양시료내의 망간 함량과 비례관계가 있는 것으로 나타났다. As(III)를 오염시킨 Inc-B 및 Ult-B 토양시료에서의 노화시간 경과에 따른 총비소의 생접근도 감소는 Inc-A 및 Ult-A 토양시료에서 얻어진 값보다 더 크게 나타났다. 이러한 경향은 철 함량이 풍부한 Inc-B 및 Ult-B 토양들이 As(III)로부터 산화된 As(V)를 지속적으로 고착화시킴에 따른 것으로 여겨지며 As(V)로 오염시킨 토양시료에서 얻어진 As(V) 고착화 정도와 유사한 경향을 나타내었다.