• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.26 no.6
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• pp.446-450
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• 2013

Growth mechanism of GS-MBE(Gas source-Molecular Beam Epitaxy) has been investigated. We observed that the growth rate of GaN films is changing from 520 nm/h to 440 nm/h by the variation of V/III ratio under nitrogen-rich growth condition. It was explained that the amount of hydrogen on the growth front varies by the ammonia flow, and gallium hydrides are generated on the surface by a reaction of hydrogen and gallium, resultantly the amount of gallium supplying is changing along with the $NH_3$ flow. Reflection high energy electron diffraction (RHEED) observation was used to confirm the N-rich condition. The crystal quality of GaN was estimated by photoluminescence (PL) and X-ray diffraction (XRD).

• ETRI Journal
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• v.16 no.3
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• pp.1-10
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• 1994

Undoped GaAs has been successfully grown by chemical beam epitaxy (CBE) via surface decomposition process using arsine $(AsH_3)$ and trimethylgallium (TMG). Three distinct regions of temperature-dependent growth rates were identified in the range of temperatures from 570 to $690^{\circ}C$. The growth rates were found strongly dependent on the V/III ratio between 5 and 30. The growth rate at low V/III ratio seems to be determined by arsenic produced on the surface, whereas at high V/III ratio it shows dependence on the adsorption of TMG. Hall measurement and photoluminescence (PL) analysis show that the films are all p-type and that carbon impurities are primarily responsible for the background doping. Carbon concentrations have been found to be reduced by two orders of magnitude as compared to those of epilayers grown by CBE which employs TMG and arsenic obtained from precracked $AsH_3$ in a high temperature cell. It was also found that hydrogen atoms dissociated from unprecracked $AsH_3$ play an important role in removing hydrocarbon-containing species resulting in a significant reduction of car-bon impurities.

• Journal of Korean Society of Environmental Engineers
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• v.27 no.6
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• pp.590-598
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• 2005

An adequate method to identify chromium separation, Cr(III) and Cr(VI), in water samples were studied by using High Performance Liquid Chromatography(HPLC) coupled with Inductively Coupled Plasma Mass Spectometer(ICP-MS) equipped with Dynamic Reaction Cell(DRC). The characteristic distribution of Cr(III) and Cr(VI) in the raw water taken at the six water intake stations in Seoul, was analyzed by the method developed by the authors. The chromium species separated by HPLC was isocratically conducted by using tetrabutylammonium phosphate monobasic(1.0 mM TBAP), ethylenediaminetetraacetic acid(0.6 mM EDTA) and 2% v/v methanol as the mobile phase. 5% v/v methanol was used as flushing solvent. A reactive ammonia($NH_3$) gas was used to eliminate the potential interference of $ArC^+$. Several Parameters such as solvent ratio, pH, flow rate and sample injection volume were optimized for the successful separation and reproducibility. Although it has been reported thai the separation sensitivity of Cr(III) is superior to that of Cr(VI), the authors observed Cr(VI) was more sensitive than Cr(III) when ammonia($NH_3$) gas was used as the reaction gas. It took less than 3 minutes to analyze chromium species with this method and the estimated detection limits were $0.061\;{\mu}g/L$ for Cr(III) and $0.052\;{\mu}g/L$, for Cr(VI). According to the results from the analysis on chromium species in the raw water of the six intake stations, the concentrations of Cr(III) ranged from 0.048 to $0.064\;{\mu}g/L$(ave. $0.054\;{\mu}g/L$) while that of Cr(VI) ranged from 0.014 to $0.023\;{\mu}g/L$(ave. $0.019\;{\mu}g/L$). Recovery ratio was very high($90.1{\sim}94.1%$). There were two or three times more Cr(III) than Cr(VI) in the raw water.

• Journal of the Korean Chemical Society
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• v.17 no.3
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• pp.169-173
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• 1973

The tridentate schiff base ligand, salicyliden amino-o-hydroxy benzene, has derived from salicylaldehyde and o-amino phenol. This ligand reacts with a series of Mo (VI), Mo (V), Mo (IV), and Mo (III) oxidated states and forms a new complexes; [Mo O$_2(H_2O)\;(C_{13}H_9O_2N)]$, [MoO Cl$(H_2O)\;(C_{13}H_9O_2N)]$, [Mo(SCN)$_2(H_2O)\;(C_{13}H_9O2_N)]$ 및 $[Mo(H_2O)_2\;(C_{13}H_9O_2N)]_2O$. The Mo (VI), Mo(V) and Mo(Ⅳ) ions in these complexes are octahedron, hexa coordinate, and the mole ratio of these ions to the ligand are 1 : 1, but Mo (III) Complex is a Mo-O-Mo oxygen bridge bond and polynuclear, and the mole ratio of Mo (III) to the ligand 1 : 1 above facts are identified from the data of Infrared spectra, visible spectra, and elemental analysis.

• Journal of Biosystems Engineering
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• v.17 no.4
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• pp.396-403
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• 1992

In order to operate a combine harvester at the optimum conditions and maximum performance, a forward speed control system(FSCS) was designed and develped. The FSCS consisted of engine, continuously variable V-belt transmission, threshing unit, traveling unit, detecting unit, and controller. Each components of the system were mathematically modeled. By a computer simulation, the effects of control parameters such as hydraulic piston speed, speed ratio, dead band of engine speed on the system performance were analysed, and the optimum control conditions were identified. The system appeared to be the most stable at the hydraulic piston speed of 10.6mm/s and the speed ratio of 0.4. The proper dead band of engine speed appeared to be 30rpm through the simulation and verification tests.

• Journal of Environmental Science International
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• v.23 no.7
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• pp.1349-1358
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• 2014

This study suggests plan of green space management based on the result of research apprehending the characteristic through sorting types of city thermal environment targeting summer which thermal pollution is the most serious. Considering anthropogenic heat, development level of wind road, thermal environment, as a result of types of thermal environment process, it is appeared 36 types, and 10 types is relevant of this research subject. Type I-1, size of building is large, artificial covering area is wide, and thermal load of anthropogenic heat is high, type II-1, development condition of wind road is incomplete as IIlevel, entering cold air is difficult and thermal management and improvement is needed area. Type III-1, scale is large and it is area of origin of cold air, development level of wind road is mostly favorable, type III-2 is revealed as smaller scale than III-1, and small area of origin of cold air. Type IV, anthropogenic heat is $81{\sim}150W/m^2$, average, but development function of wind road is very favorable. Type V, large area of thermal load and the origin of cold air are distributed as similar ratio, and level of development function of wind road is revealed as II level. According to standard of type classification of thermal environment, as a result of suggesting plan of green space management and biotops area ratio, type I-1 is buffer green space and waterway creation, goal biotops area ratio 35%, type II-1 afforestation in site and goal biotops area ratio 40%, type III-1, preservation plan to display the current function continuously is requested. Type IV suggests afforestation of stream current, and type V suggests quantitative increase of green space and goal biotops area ratio 45%.

• Journal of Korean Society of Water and Wastewater
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• v.30 no.1
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• pp.87-97
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• 2016

First of all, Fe or/and Mn immobilized granular activated carbons (Fe-GAC, Mn-GAC, (Fe, Mn)-GAC) were synthesized and tested to remove arsenate (As(V)). The results in batch test indicated that Fe-GAC removed As(V) effectively, even though the surface area of Fe-GAC was reduced largely. Moreover, adsorption isotherm test indicated that the experimental data fit well with Langmuir model and the maximum adsorption capacity ($q_{max}$) of Fe-GAC for As(V) was $3.49mg\;g^{-1}$, which was higher than GAC ($2.24mg\;g^{-1}$). In column test, the simulated water, which consisted of As(V), Fe(III), Mn(II) and Ca(II) in tap water, was used. Fe-GAC column with 1 hr of pre-washing time treated As(V) effectively while GAC column removed Fe(III) better than Fe-GAC column. Moreover, the increasing pre-washing time from 1 to 9 hour in Fe-GAC column enhanced Fe(III) removal with little negative impact of As(V) removal. Mostly, the column filled with Fe-GAC and GAC (i.e. the mass ratio of Fe-GAC:GAC = 2:8) showed the higher treatability of both As(V) and Fe(III), even it operated with 1 hr pre-washing time.

• Journal of Environmental Science International
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• v.24 no.8
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• pp.1015-1021
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• 2015

In order to establish the design parameters of adsorption for arsenic compounds with hydrotalcite including chlorine ion, the basic properties of adsorption and desorption as well as the oxidation of As (III) were examined in batch tests. The maximum adsorption capacities of arsenite and arsenate were 6.2 mg-As(III)/g and 103 mg-As (V)/g, respectively. Although 80.4% of maximum desorption was shown in 20% NaOH solution, 5~10% of NaOH was recommended considering operating benefits, where the proper condition of the desorption was in the range of 73% to 80%. The most suitable desorption condition was in the combination of NaCl (10~20%) and NaOH (5~10%). Within 2 minutes, As (III) was easily oxidized to As (V) with 0.0001 N KMnO4, where the maximum oxidization ratio was shown to 98.9%.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.56-61
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• 2015

The effects of the growth temperature on the properties of a-plane GaN epi-layer on r-plane sapphire by HVPE were studied, when the constant V/III ratio and the flow rate of HCl for the Ga source channel was fixed at 10 and 700 sccm, respectively. Additionally the effects of V/III ratios for source gasses were studied when growth temperature and the flow rate of HCl for the Ga source channel was fixed at $1000^{\circ}C$ and 700 sccm, respectively. As the growth temperature was increased, the values of Full Width Half Maximum (FWHM) for Rocking curve (RC) of a-plane GaN (11-20) epi-layer were decreased and thickness of a-plane GaN epi-layer were increased. As V/III ratios were increased at $1000^{\circ}C$, the values of FWHM for RC of a-plane GaN (11-20) were declined and thickness of a-plane GaN epi-layer were increased. The a-plane GaN (11-20) epi-layer grown at $1000^{\circ}C$ and V/III ratio = 10 showed the lowest value FWHM for RC of a-plane GaN (11-20) for 734 arcsec and the smallest dependence of Azimuth angle for FWHM of (11-20) RCs.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.353-353
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• 2012

InAs nanowires (NWs)는 나노소자스케일의 전자소자나 광전자소자를 위한 기본 단위(building block)로 사용될 수 있고, 1차원적 나노구조를 가지면서 나타나는 특별한 전기적, 광학적 특성으로 인해 전계효과 트랜지스터, 레이저, 광발광 다이오드, 가스 검출 센서 등의 많은 응용소자로 활용을 위한 연구가 진행되 있으며 주로 실리콘, 갈륨비소 기판 위에 금속유기기상 증착(MOCVD) 또는 분자선 증착 (MBE)을 이용하여 선택적 수직배열 성장 조절을 위한 연구와 특성 평가 연구가 주로 이뤄지고 있다. 본 연구에서는 InAs NWs를 MBE 장치를 이용하여 Si(111) 기판 위에 Au와 같은 촉매를 사용하지 않고 Si과 InAs의 큰 격자 불일치로 인하여 성장되는 Volmer-weber 성장 모드를 이용 하였다. InAs NW 성장모드는 Si ($5.4309{\AA}$)과 InAs ($6.0584{\AA}$) 사이에 큰 격자상수 차이를 이용하게 되는데 촉매를 사용하여 성장하는 일반적인 이종 화합물 반도체 성장 모드와 달리 액상상태가 존재하지 않고 바로 In과 As이 Si 기판 위를 이동하여 수직방향으로 성장이 이루어지는 vaporsolid(VS) 모드이다. InAs NW V-S 성장 모드는 Si 기판과의 격자 상수차에 의한 스트레스를 이용해야 하므로 Si기판 위에 존재하는 native oxide는 완벽히 제거되어야 한다. InAs NW 최적 성장 조건을 찾기위해 V/III raitio, 성장 온도, 기판표면처리 등의 성장 변수를 변화 시켜가며 실험을 수행하였다. Native oxide를 제거하기 위하여 HF와 buffered oxide etchant (BOE)를 사용하였다. InAs NWs 성장조건은 Indium flux를 고정 시키고 V/III ratio는 50~400까지 변화를 주었다. V/III ratio를 200으로 고정을 시키고 성장온도를 $375{\sim}470^{\circ}C$에서 성장 하였다. 이 때 InAs NWs는 $430^{\circ}C$에서 가장 높은 밀도와 aspect ratio를 얻을 수 있었다. Arsenic flux에 대해서는 많을 수록 좋은 aspect ratio를 얻을 수 있었다. 하지만 InAs 구조의 절대 부피는 거의 같다는 것을 확인 할 수 있었고 이는 온도와 V/III ratio가 Indium adatom의 surface migration length에 대하여 중요한 요소로 작용되는 것을 알 수 있었다.