• Proceedings of the KIEE Conference
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• 1996.11a
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• pp.346-349
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• 1996

In application of high power IGBT PWM inverters, the treatable power range is considerably limited due to the overvoltage caused by the stray inductance components within the power circuit. This paper proposes a new gate drive circuit for IGBTs which can actively suppress the overvoltage across the driven IGBT at turn-off and the overvoltage across the opposite IGBT at turn-on while preserving the most simple and reliable power circuit. The turn-off driving scheme has adaptive feature to the amplitude of collector current, so that the overvoltage is limited much effectively at the larger collector current. The turn-on scheme is to decrease the rising rate of the collector current by increasing input capacitance during turn-on transient when the gate-emitter voltage is greater than threshold voltage. The experimental results under various normal and fault conditions prove the effectiveness of the proposed circuit.

• The Transactions of the Korean Institute of Power Electronics
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• v.7 no.6
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• pp.570-578
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• 2002

Cathodic protection is widely used to prevent corrosion of steel materials buried in the underground and sea. As a rectifier for cathodic protection, the conventional phase-controlled rectifiers have been used so far in spite of such shortcomings as large volume, heavy weight and floor power factor. In order to overcome such disadvantages, this paper proposes a new module-type switching rectifier for cathodic protection, which is composed of two parts, namely, AC/DC converter and module- type DC/DC converter. The AC/DC converter is a single-phase IGBT PWM rectifier, thus resulting in almost unity power factor and controlled DC output voltage. The module-type DC/DC converter operates under ZVS/ZCS switching condition to permit high frequency switching operation. It enables to use high-frequency transformer for electrical isolation, thus reducing volume and weight of overall system and improving system efficiency. It should be anticipated that the proposed rectifier techniques apply to the similar technical areas.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.45 no.7
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• pp.17-22
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• 2008

This paper presents a low-power and small-area pulse width modulator by light intensity for photoflash. Light intensity controller is achieved by using capacitor, photodiode, and comparator. The proposed circuit designs digital circuit to reduce static power consumption except comparator. And IGBT driver has short circuit protection using delay cell. The pulse width modulator has the operating range of $V_{MS}$ from 0.5V to 2.5V and pulse width of output from 0.14ms to 1.65ms at 300Hz. The pulse width modulator fabricated in $0.35-{\mu}m$ CMOS technology occupies $0.85mm{\times}0.56mm$. This circuit consumes 3.0mW at 300Hz and 3.0V.

• Proceedings of the KIEE Conference
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• 1993.07b
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• pp.746-748
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• 1993

To overcome the problem of the diode reverse recovery in high switching frequency inverter, a new gate drive scheme is proposed for IGBT in this paper. Using this circuit, the reverse recovery current can be controlled and faster switching time can be achieved for hard switching inverter. The over-current protection method, which is suitable for the proposed gate driver, is also presented. The operation of the proposed circuit is investigated and its usefulness is verified through the experimental results.

• Proceedings of the KIEE Conference
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• 1996.07a
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• pp.556-558
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• 1996

PLS 2-GeV linac has 11 sets of high power klystron-modulator system as a main RF source for the beam acceleration. The modulators can provide 200-MW peak pulsed power(400-kV, 500-A) with a pulse width of $7.5{\mu}s$(ESW), a maximum pulse repetition rate of 120-Hz at the full power level. The DC power supply provides a 25-kV, 7-Adc and the charging system consists of a charging inductor, charging capacitor, and the diode for reverse current protection. The charged PFN voltage by a LC resonant charging method has two times of the DC high voltage and the pulsed power is delivered to the load by a thyratron switch. To reduced the press of high voltage lit thyratron switch, the command charging is the best method. In this article, the high voltage switch for the command charging method is tested to the start work and the system is presented with the experiment results of the trigger and operational characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.46 no.3
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• pp.96-102
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• 2009

This paper deals with gate drive and power IC for high power devices(600V/200A and 1200V/150A). The proposed gate driver provides high gate driving capability (4 A source, 8 A sink), and over-current protected by means of power transistor desaturation detection. In addition, soft-shutdown function is added to reduce voltage overshoots due to parasitic inductance. This gate drive If is designed, fabricated, and tested using the Dongbu hitek 0.35um BCDMOS process.

• Proceedings of the KIEE Conference
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• 2001.04a
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• pp.215-217
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• 2001

This paper describes an all solid-state switch pulse generator for various applications where square pulse voltage is required. The pulse generator produces various voltage pulses: voltage $5{\sim}100kV$. current $10{\sim}200A$, pulse width $1{\sim}10{\mu}sec$, repetition rate up to 500Hz. The output power is the combination of these parameters up to 10kW. It consists of a DC-DC converter and several pulse generating modules which are connected in series to obtain higher pulse voltage. Each module contains semiconductor switches (IGBT's), energy storage capacitors and control units to trigger switches. The structure and operational principle are described and the protection circuit for reliable operation is suggested. Experimental results show that the pulse generator can be used for applications with nonlinear loads.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.23-26
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• 2005

This paper describes the design, construction and implementation of matrix converter based on space vector modulation technique. The matrix converter provides sinusoidal input and output wave forms, bidirectional power flow, controllable input power factor and a compact design, compared to the VSI with diode rectification stage at the input. The implemented prototype of matrix converter is built using the exclusive IGBT module and has an input filter, overvoltage protection circuit and commutation means for overcoming practical issues. The good results tested using an induction motor are also presented.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.47 no.5
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• pp.71-79
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• 2010

This paper presents a design of a LLC resonant controller IC. LLC resonant controller IC controls the voltage of the 2nd side by adjusting frequency the input frequency of the external resonant circuit. The clock generator is integrated to provide the pulse to the resonant circuit and its frequency is controlled by the external resistor. Also, the frequency of the VCO is adjusted by the feedback voltage. The protection circuits such as UVLO(Under Voltage Lock Out), brown out, fault detector are implemented for the reliable and stable operation. The HVG, and LVG drivers can provide the high current and voltage to the IGBT. The designed LLC resonant controller IC is fabricated with the 0.35 um 2P3M BCD process. The overall die size is $1400um{\times}1450um$, and supply voltage is 5V, 15V.

• Proceedings of the KIEE Conference
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• 1997.07f
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• pp.2085-2087
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• 1997

The UPS for power plant is mainly used as the critical power supply of power plant. This is very much alike to the general UPS but it requires the special design criteria of power plant. In this study, we designed and develope system according to the design criteria of p plant. In the development of the special system, the designs of IGBT Drive, heat protection and monitoring system, and p components are key techniques. This Paper describes the power circuits, key techniques, the control and monitoring of the developed UPS(DC 125V $3{\Phi}$ 100K Finally, using the UPS we verified superiority through the type test.