• 대한전기학회:학술대회논문집
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• 대한전기학회 1998년도 하계학술대회 논문집 D
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• pp.1294-1296
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• 1998

Platinum thin films which hardly form volatile compounds with any reactive gas at normal process temperature was etched in Inductively Coupled Plasma (ICP) using Ar/HBr/$Cl_2$ gases. It is observed that the etch rate of platinum is reduced as increasing of HBr/$Cl_2$ gas mixing ratio when Ar gas ratio is fixed. However, we obtain good etching profile of platinum films without unwanted residues in 90% Ar/5% HBr/5% $Cl_2$ gas mixing ratio.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 1999년도 추계종합학술대회 논문집
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• pp.891-894
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• 1999

ICP reactor produces high-density and high-uniformity plasma in large area, are has excellent characteristic of direction in the case of etching. Until now, many algorithms used one mesh method. These algorithms are not appropriate for sub 0.1 ${\mu}{\textrm}{m}$ device technologies which should deal with each ion. These algorithms could not present exactly straggle and interaction between projectile ions and could not consider reflection effects due to interactions among next projectile ions, reflected ions and sputtering ions, simultaneously. And difficult consider am-bipolar drift effect.

• 한국전기전자재료학회논문지
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• 제20권10호
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• pp.846-851
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• 2007

In this work, the etching characteristics of $Ge_2Sb_2Te_5(GST)$ thin films were investigated using an inductively coupled plasma (ICP) of $Cl_2/Ar$ gas mixture. To analyze the etching mechanism, an optical emission spectroscopy (OES) and surface analysis using X-ray photoelectron spectroscopy (XPS) were carried out. The etch rate of the GST films decreased with decreasing Ar fraction. At the same time, high selective etch rate over $SiO_2$ films was obtained and the selectivity over photoresist films decreased with increasing the he fraction. From XPS results, we found that Te halides were formed at the etching surface and Te halides limited the etch rate of the GST films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.863-865
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• 2001

In this study, RuO$_2$thin films were etched in inductively coupled $O_2$plasma. Etching characteristics of RuO$_2$thin films including etch rate and selectivity were evaluated as a function of rf power in $O_2$plasma and gas mixing ratio in $O_2$/Ar plasma. In $O_2$ plasma, the etch rate of RuO$_2$thin film increases as rf power increases. In $O_2$/Ar plasma, the etch rate of RuO$_2$thin film increases up to 10% Ar, but decrease with furthermore increasing Ar mixing ratio. The enhanced etch rate can be obtained with increasing rf power and small addition of Ar gas.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.424-428
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• 2003

The channel of a superconducting flux flow transistor has been fabricated with plasma etching method using a inductively coupled plasma etching. The ICP conditions then were ICP Power of 450 W, rf chuck power of 150 W, the pressure in chamber of 5 mTorr, and Ar : Cl$_2$=1:1. Especially, over the 5 mTorr, the superconducting thin films were not etched. The channel etched by plasma gas showed the critical temperature over 85 K. The critical current of the SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained trans-resistance value was smaller than 0.1 $\Omega$ at a bias current of 40 mA.

• 전기전자학회논문지
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• 제13권4호
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• pp.23-27
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• 2009

실리콘 기판 상에 MBE (molecular beam epitaxy)로 형성된 GaSb 기반 p-channel HEMT 소자를 제작하기 위하여 오믹 접촉 형성 공정과 식각 공정을 연구하였다. 먼저 각 소자의 절연을 위한 메사 식각 공정 연구를 수행하였으며, HF기반의 습식 식각 공정과 ICP(inductively coupled plasma)를 이용한 건식 식각 공정이 모두 사용되었다. 이와 함께 소스/드레인 영역 형성을 위한 오믹 접촉 형성 공정에 관한 연구를 진행하였으며 Ge/Au/Ni/Au 금속층 및 $300^{\circ}C$ 60초 RTA공정을 통해 $0.683\;{\Omega}mm$의 접촉 저항을 얻을 수 있었다. 더불어 HEMT 소자의 게이트 형성을 위한 게이트 리세스 공정을 AZ300 현상액과 citric산 기반의 습식 식각을 이용하여 연구하였으며, citric산의 경우 소자 구조에서 캡으로 사용된 GaSb와 베리어로 사용된 AlGaSb사이에서 높은 식각 선택비를 보였다.

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2003년도 추계총회 및 연구발표회 초록집
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• pp.145.1-145
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• 2003

• 한국재료학회:학술대회논문집
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• 한국재료학회 2008년도 춘계학술발표대회 및 제14회 신소재 심포지엄
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• pp.29.2-29.2
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• 2008

• 한국진공학회지
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• 제8권4B호
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.