• Transactions of the Society of Information Storage Systems
• /
• v.1 no.2
• /
• pp.192-196
• /
• 2005

In this paper, we investigated the possibility of replicating patterned media by nano-injection molding process with a metallic nano-stamper. The original nano-master was fabricated by E-beam lithography and ICP etching process. The metallic nano-stamper was fabricated using a nanoimprint lithography and nano-electroforming process. The nano-patterned substrate was replicated using a nano-injection molding process without additional etching process. In nano-injection molding process, since the solidified layer, generated during the polymer filling, deteriorates transcribability of nano patterns by preventing the polymer melt from filling the nano cavities, an injection-mold system was constructed to actively control the stamper surface temperature using MEMS heater and sensors. The replicated polymeric patterns using nano-injection molding process were as small as 50 nm in diameter, 150 nm in pitch, and 50 nm in depth. The replicated polymeric patterns can be applied to high density patterned media.

• Applied Science and Convergence Technology
• /
• v.23 no.5
• /
• pp.265-272
• /
• 2014

The ion energy distributions (IEDs) arriving at a substrate strongly affect the etching rates in plasma etching processes. In order to determine the IEDs accurately, it is important to obtain the characteristics of radio frequency (rf) sheath at pulsed rf substrates. However, very few studies have been conducted to investigate pulsing effect on IEDs at multiple rf driven electrodes. Therefore, in this work, we extended previous one-dimensional dynamics model for pulsed-bias electrodes. We obtained the IEDs using the developed rf sheath model and observed that numerically solved IEDs are in a good agreement with the experimental results.

• Journal of the Korean institute of surface engineering
• /
• v.42 no.4
• /
• pp.169-172
• /
• 2009

We investigated the dry-etching mechanism of the TiN thin film using a $Cl_2$/Ar inductively coupled plasma system. To understand the effect of the $Cl_2$/Ar gas mixing ratio, we etched the TiN thin film by varying $Cl_2$/Ar gas mixing ratio. When the gas mixing ratio was 100% $Cl_2$, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.

• Transactions on Electrical and Electronic Materials
• /
• v.13 no.1
• /
• pp.6-9
• /
• 2012

In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to $SiO_2$) of ZnO thin films in $N_2/Cl_2$/Ar inductivity coupled plasma. A maximum etch rate and selectivity of 108.8 nm/min and, 3.21, respectively, was obtained for ZnO thin film at a $N_2/Cl_2$/Ar gas mixing ratio of 15:16:4 sccm. The plasmas were characterized by optical emission spectroscopy. The x-ray photoelectron spectroscopy analysis showed the efficient destruction of oxide bonds by ion bombardment. An accumulation of low volatile reaction products on the etched surface was also shown. Based on this data, an ion-assisted chemical reaction is proposed as the main etch mechanism for plasmas containing $Cl_2$.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2005.05a
• /
• pp.60-63
• /
• 2005

In this paper, we investigated the possibility of replicating patterned media by nano-injection molding process with a metallic nano-stamper. The original nano-master was fabricated by E-beam lithography and ICP etching process. The metallic nano-stamper was fabricated using a nanoimprint lithography and nano-electroforming process. Finally, the nano-patterned substrate was replicated using a nano-injection molding process without additional etching process. The replicated patterns using nano-injection molding process were as small as 50 nm in diameter, 150 nm in pitch, and 50 nm in depth.

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2005.10a
• /
• pp.318-321
• /
• 2005

FIB (Focused ion Beam) milling on a 500-nm-thick silicon nitride membrane was studied in order to fabricate a high-resolution shadow mask, or called a nanostencil. The silicon nitride membrane was fabricated by MEMS processes of LPCVD, photolithography, ICP etching and bulk silicon etching. The apertures made by FIB milling and normal photolithography were compared. The square metal pattern deposited through FIB milled shadow mask showed 6 times smaller comer radius than the case of photolithography. The results show high resolution patterning could be achieved by local deposition through FIB milled shadow-mask.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.285-288
• /
• 1997

Generally the high dielectric films, such as PZT(Pb(Z $r^{1-x}$ $Ti_{x}$ ) $O_3$) and BST(B $a_{l-x}$S $r_{x}$ Ti $O_3$) have been formed on the Pt thin films. However it is generally known that the dry etching of Pt is difficult because of its chemical stability. So, the dry etching of Pt remains at the preliminary work. Therefore, in this study, Pt etching mechanism was investigated with Ar/C $l_2$gas plasma by using XPS(X-ray photoelectron spectroscopy) and QMS(Quadrupole mass spectrometry). Ion current density was measured with Ar/C $l_2$gas plasma by using single Langmuir probe. XPS results shoved that the atomic % of Cl element on the etched Pt sample increased with increasing Ar/(Ar+C $l_2$). And QMS results showed that the increase of Ar partial pressure in the plasma resulted in the improvement of C $l_2$dissociation and Cl redical formation and simultaniously the increase of ion bombardment effects.s.s.

• Transactions on Electrical and Electronic Materials
• /
• v.4 no.3
• /
• pp.1-4
• /
• 2003

The etching of Au thin films has been performed in an inductively coupled $CF_4 / Cl_2 / Ar$ plasma. The etch properties including etch rate and selectivity were examined as $CF_4$ content adds from o to $30\%$ to $Cl_2/Ar$ plasma. The $Cl_2/(Cl_2 + Ar)$ gas mixing ratio was fixed at $20\%$. Other parameters were fixed at an rf power of 700 W, a dc bias voltage of -150 V, a chamber pressure of 15 mTorr, and a substrate temperature of $30^{\circ}C$. The highest etch rate of the Au thin film was 370 nm/min at a $10\%$ additive $CF_4$ into $Cl_2/Ar$ gas mixture. The surface reaction of the etched Au thin films was investigated using x-ray photoelectron spectroscopy (XPS) analysis. The XPS analysis shows that the intensities of Ail peaks are changed, indicating that there is a chemical reaction between Cl and Au. Au-Cl is hard to remove on the surface because of its high melting point. However, etching products can be sputtered by Ar ion bombardment.

• The Transactions of the Korean Institute of Electrical Engineers C
• /
• v.48 no.6
• /
• pp.451-455
• /
• 1999

The highest etch rate of Pt film was obtained at 10% $Cl_2$/90% Ar gas mixing ratio in our previous investigation. However, the problems such as the etch residues(fence) remained on the pattern sidewall, low selectivity to oxide as mask and low etch slope were presented. In this paper, the etching by additive $O_2$ gas to 10% $Cl_2$/90% Ar gas base was examined. As a result, the fence-free pattern and higher etch slope as about 60$^{\circ}$was observed and the selectivity to oxide increased to 2.4 without decreasing of the etch rate $1500{\AA}$/min. XPS surface analysis proved that a only little $O_2$ gas removes the Pt-CI compounds as residues on the etched surface.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.9
• /
• pp.681-685
• /
• 2012

We investigated the dry etching characteristics of TiN in $TiN/Al_2O_3$ gate stack using a inductively coupled plasma system. TiN thin film is etched by BCl3/He plasma. The etching parameters are the gas mixing ratio, the RF power, the DC-bias voltages and process pressures. The highest etch rate is in $BCl_3/He$ (25%:75%) plasma. The selectivity of TiN thin film to $Al_2O_3$ is pretty similar with $BCl_3/He$ plasma. The chemical reactions of the etched TiN thin films are investigated by X-ray photoelectron spectroscopy. The intensities of the Ti 2p and the N 1s peaks are modified by $BCl_3$ plasma. Intensity and binding energy of Ti and N could be changed due to a chemical reaction on the surface of TiN thin films. Also we investigated that the non-volatile byproducts such as $TiCl_x$ formed by chemical reaction with Cl radicals on the surface of TiN thin films.