• Journal of the Korean Society of Clothing and Textiles
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• v.28 no.1
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• pp.165-171
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• 2004

The analytical method of toxic heavy metals in disposable diapers was developed. Disposable diapers obtained from Korea, Japan, America and German were determinated and quantified. Sample treatment (Total Digestion) was wet chemical acid digestion for extraction of nine hazardous inorganic elements (Sb, As, Pb, Cd, Cr, Co, Cu, Ni, Hg) in disposable diapers. Inductively Coupled Plasma Mass Spectrometer (ICP-MS) and Inductively Coupled Plasma Atomic Emission Spectrometer (ICP-AES) have been used for analyzing nine hazardous inorganic elements. The results were as follows : The concentration of extractable Sb which was treated for 3 hours with artificial urine and disposable diapers was higher than those of 6 hours and 24 hours. The concentration of extractable Cr was same as Sb. On the other hands, the behavior of Cu and Ni were different from Sb and Cr. Concentrations of extractable Cu and Ni increased as increasing the reaction time between artificial urine and disposable diapers.

• Journal of the Korean institute of surface engineering
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• v.37 no.3
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• pp.164-168
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• 2004

Polycrystalline silicon thin films were deposited by inductively coupled plasma (ICP) assisted magnetron sputtering using a gas mixture of Ar and $H_2$ on a glass substrate at $250^{\circ}C$. At constant Ar mass flow rate of 10 sccm, the working pressure was changed between 10mTorr and 70mTorr with changing $H_2$ flow rate. The effects of RF power applied to ICP coil and $Ar/H_2$ gas mixing ratio on the properties of the deposited Si films were investigated. The crystallinity was evaluated by both X-ray diffraction and Raman spectroscopy. From the results of Raman spectroscopy, the crystallinity was improved as hydrogen mixing ratio was increased up to$ Ar/H_2$=10/16 sccm; the maximum crystalline fraction was 74% at this condition. When RF power applied to ICP coil was increased, the crystallinity was also increased around 78%. In order to investigate the surface roughness of the deposited films, Atomic Force Microscopy was used.

• Journal of Soil and Groundwater Environment
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• v.22 no.6
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• pp.22-28
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• 2017

The accuracy of analytical results in response to the use of different additives ($NH_4Cl$, KCl, $LaCl_3$) and oxidant gases was evaluated and compared by using Atomic Absorption Spectrometry (AAS). Identification of spectroscopic interferences and possible improvements in Inductively Coupled Plasma-Atomic Emission Spectrometry (ICP-AES) analysis were also discussed. The average accuracies of total chromium using Certified Reference Materials (CRMs) were found to be 72.1~94.2% in air/acetylene flame condition by AAS, and they were improved to 100.5~110.5% when the oxidants was changed to nitrous oxide rather than adding the additives. The field samples showed similar trends to CRMs, but chromium concentrations were highly variable depending on analytical conditions. The average accuracies using CRMs were estimated to be 89.3~166.1% by ICP-AES, and improved to below 121.7% after eliminating iron interference. Field samples with low chromium and high iron concentration were measured to be > 30% lower in total chromium concentrations by ICP-AES than AAS in nitrous oxide/acetylene flame. Total chromium concentrations in soil could be analyzed with better accuracy under nitrous oxide/acetylene flame by AAS because it was more effective to increase the temperature of the flame than to eliminate the chemical interference for maximizing atomization of chromium. When using ICP-AES, interference substances, total chromium levels, and analytical conditions should be also considered.

• Proceedings of the KIEE Conference
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• 1997.11a
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• pp.276-278
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• 1997

The reliable etching process is one of the essential steps in fabricating GaN based-device. High etch rate is needed to obtain a deeply etched structure and perfect anisotropic etched facet is needed to obtain lasing profile. In the research, therefore, we had proposed a planar inductively coupled plasma etcher (Planar ICP Etcher) as a high density plasma source, and studied the etching mechanism using the $CH_4/H_2$/Ar gas mixture. Dry etching characteristics such as etch rate, anisotropic etching profile and so on, for the III-V nitride layers were investigated using Planar ICP Etcher, based on the plasma characteristic as a variation of plasma process parameters.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.5
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• pp.424-428
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• 2003

The channel of a superconducting flux flow transistor has been fabricated with plasma etching method using a inductively coupled plasma etching. The ICP conditions then were ICP Power of 450 W, rf chuck power of 150 W, the pressure in chamber of 5 mTorr, and Ar : Cl$_2$=1:1. Especially, over the 5 mTorr, the superconducting thin films were not etched. The channel etched by plasma gas showed the critical temperature over 85 K. The critical current of the SFFT was altered by varying the external applied current. As the external applied current increased from 0 to 12 mA, the critical current decreased from 28 to 22 mA. Then the obtained trans-resistance value was smaller than 0.1 $\Omega$ at a bias current of 40 mA.

• Proceedings of the KIEE Conference
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• 1991.11a
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• pp.419-422
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• 1991

A mathematical model was developed to predict the temperature, the density, and the velocity distribution of an inductively coupled thermal plasma. It was for an atmospheric pressure argon thermal plasma generated by a 4 MHz radio frequency power. It has been shown that the hottest region can be moved toward centrial region by applying an external magnetic field. Based on the results of the simulation. an ICP(Inductively Coupled thermal Plasma) system was constructed and thermal plasma was generated.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2013.05a
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• pp.595-596
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• 2013

• Journal of the Korean Ceramic Society
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• v.49 no.6
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• pp.556-560
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• 2012

Nanocrystalline CrN coatings were deposited by DC and ICP-assisted magnetron sputtering on Si (100) substrates. The influences of the ICP power on the microstructural and crystallographic properties of the coatings were investigated. For the generation of the ICP, radio frequency was applied using a dielectric-encapsulated coil antenna installed inside the deposition chamber. As the ICP power increased from 0 to 500W, the crystalline grain size decreased. It is believed that the decrease in the crystal grain size at higher ICP powers is due to resputtering of the coatings as a result of ion bombardment as well as film densification. The preferential orientation of CrN coatings changed from (111) to (200) with an increase in the ICP power. The ICP magnetron sputtering CrN coatings showed excellent surface roughness compared to the DC magnetron sputtering coatings.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.57 no.5
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• pp.816-820
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• 2008

The RF inductive discharge of inductively couples plasma (ICP) continues to attract growing attention as an effective plasma source in many industrial applications, the best known of which are plasma processing and lighting technology. Although most practical ICPs operate at 13.56 [MHz] and 2.65 [MHz], the trend to reduce the operating frequency is clearly recognizable from recent ICP developments. In an electrodeless fluorescent lamp, the use of a lower operating frequency simplifies and reduces cost of RF matching systems and RF generators and can eliminate capacitive coupling between the inductor coil and plasma, which could be a strong factor in wall erosion and plasma contamination. In this study, We discussed simulation and experimental results when changing ferrite position in antenna.

• Analytical Science and Technology
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• v.20 no.3
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• pp.251-254
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• 2007

In this study, a convenient, fast and accurate inductively coupled plasma atomic emission spectrometry (ICP-AES) method has been optimized for the determination of osmium in aqueous solutions. The method makes use of the reaction of sulfurous acid with osmium to quantitative conversion of volatile Os(VIII) to non-volatile Os(IV) in the pH range 2-10. The response was found to be stabilized immediately after sulfurous acid reacted with osmium. The precision was calculated to be 0.5-4.5 % (RSD) under various ICP-AES conditions. The detection limit was 2.5-57.7 ng/g based on $3{\sigma}$ of the blank response (n=3) using a concentric flow nebulization.