• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.1
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• pp.132-138
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• 2007

Carbon nanotubes (CNTs) arc grown on Ni catalysts employing an inductively-coupled plasma chemical vapor deposition (ICP-CVD) method. The structural and field-emissive properties of the CNTs grown are characterized in terms of the substrate-bias applied. Characterization using the various techniques, such as field-omission scanning electron microscopy (FESEM), high-resolution transmission electron microscopy (HRTEM), Auger spectroscopy (AES), and Raman spectroscopy, shows that the structural properties of the CNTs, including their physical dimensions and crystal qualities, as well as the nature of vertical growth, are strongly dependent upon the application of substrate bias during CNT growth. It is for the first time observed that the provailing growth mechanism of CNTs, which is either due to tip-driven growth or based-on-catalyst growth, may be influenced by substrate biasing. It is also seen that negatively substrate-biasing would promote the vertical-alignment of the CNTs grown, compared to positively substrate-biasing. However, the CNTs grown under the positively-biased condition display a higher electron-emission capability than those grown under the negatively-biased condition or without any bias applied.

• Journal of the Korean Vacuum Society
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• v.8 no.4B
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• pp.541-547
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• 1999

Reactive ion etching process for InP using BCl3/O2/Ar high density inductively coupled plasma was investigated. The experimental design method proposed by the Taguchi was utilized to cover the whole parameter range while maintaining reasonable number of actual experiments. Results showed that the ICP power and the chamber pressure were the two dominant parameters affectsing etch results. It was also observed that the etch rate decreased and the surface roughness improved as the ICP power and the bias voltage increased and as the chamber pressure decreased. The Addition of oxygen to the gas mixture drastically improved surface roughness by suppressing the formation of the surface reaction product. The optimum condition was ICP power 600W, bias voltage -100V, 10% $O_2$, 6mTorr, and $180^{\circ}C$, resulting in about 0.15$\mu\textrm{m}$ etch rate with smooth surfaces and vertical mesa sidewalls Also, the maximum etch rate of abut 4.5 $\mu\textrm{m}$/min was obtained at the condition of ICP power 800W, bias voltage -150V, 15% $O_2$, 8mTorr and $160^{\circ}C$.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.12-14
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• 2005

Inductively Coupled Plasma Chemical Vapor Deposition(ICP-CVD)를 이용하여 공정온도 $150^{\circ}C$에서 Nanocrystalline silicon (nc-Si) 박막을 증착하였다. 실험에서 헬륨(He)가스, 수소($H_2$)가스 그리고 헬륨(He)과 수소($H_2$)의 혼합가스로 희석한 사일렌($SiH_4$)을 반응가스로 이용하였다. 이 혼합가스는 3sccm의 사일렌($SiH_4$)에 헬륨(He)과 수소($H_2$)의 주입율을 20sccm에서부터 60sccm까지 변화시켜 조건을 달리하여 사용했다. 증착한 Nc-Si 박막을 X-ray diffraction (XRD)으로 분석하여 각각의 조건에 대한 Nc-Si 박막의 속성을 연구하였다. 헬륨(He) 또는 수소($H_2$) 혼합가스의 주입율이 커지면서 <111>과 <222>의 최고점(peak)이 더 높아졌으며 결정화 되지 않고 비결정질로 남아 있는 성장층(incubation layer)이 얇아졌다. 이 결과는 nc-Si를 증착할 때 사용한 수소($H_2$) 플라즈마와 헬륨(He) 플라즈마의 효과로 설명할 수 있다. 실험을 통해 ICP-CVD로 증착한 nc-Si 박막을 박막 전계효과트랜지스터 (TFT)에서 우수한 특성의 전자수송층(active layer)으로 사용할 수 있는 것을 확인하였다.

• Analytical Science and Technology
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• v.13 no.4
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• pp.423-427
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• 2000

Total arsenic in drinking water such as spring, small water-supply system and mineral water was determined by inductively coupled plasma mass spectrometry. The contents of total arsenic were analyzed after acidification by nitric acid to become 1% in water samples. According to the results, total concentration of arsenic in drinking water was below 30ppb.

• Mass Spectrometry Letters
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• v.15 no.3
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• pp.149-157
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• 2024

The objective of the present study was to validate the analytical procedure for the quantitative determination of four trace metals (As, Cd, Pb, and Hg) in extracted fish lipids using Inductively Coupled Plasma-Mass Spectrometry, ICP-MS. The extracted lipids using Bligh and Dyer method were digested by means of microwave-assisted acid digestion and introduced into an optimized ICP-MS instrument. The validation of the analytical method was carried out in accordance with the international standards and guidelines outlined in the European Pharmacopeia (2022), which included specificity, selectivity, linearity, limit of detection, limit of quantification, precision, and accuracy. The linearity ranges of the calibration curves were R² > 0.999, while the relative standard deviation (%RSD) for precision was within 5%. All targeted trace metals have shown mean recoveries between 88.0%-114.9%. The obtained LOD and LOQ values for this analytical protocol indicated the ability to detect and quantify of As, Cd, Pb, and Hg at trace levels. The overall validation confirms the described analytical method was appropriate for routine analyses of As, Cd, Pb, and Hg in fish lipids.

• Proceedings of the Korean Vacuum Society Conference
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• 2002.02a
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• pp.172-172
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• 2002

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2000.05a
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• pp.27-28
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• 2000

• Bulletin of Food Technology
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• v.22 no.1
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• pp.21-28
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• 2009

• Proceedings of the Materials Research Society of Korea Conference
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• 2005.05a
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• pp.229-229
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• 2005

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.156-156
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• 2001