• 제목/요약/키워드: IC substrate

검색결과 184건 처리시간 0.027초

Streptomyces sp. 20747이 생산하는 Tyrosinase-Inhibiting Isoflavonoids (Tyrosinase-Inhibiting Isoflavonoids Produced by Streptomyces sp. 20747)

  • 이충환;전효곤;고영희;서영배
    • 한국미생물·생명공학회지
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    • 제21권2호
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    • pp.139-143
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    • 1993
  • Three isoflavonoids having tyrosinase-inhibiting activity were isolated from the culture filtrate of Streptomyces sp. 20747. Their structures were determined by UV, EI-MS, 1H-NMR, 13C-NMR to be daidzein, daidzein 7-rhamnoside, and genistein 7-rhamnoside, which were competitive with substrate and had IC50 value of 14, 19, and 16 ng/ml, respectively to mushroom tyrosinase and did not inhibit melanin production of Streptomyces bikiniensis. Soybean meal as well as peptone were found to be a good nitrogen source for tyrosinase-inhibiting isoflavonoids production, susgesting that soybean meal is not the origin of tyrosinase inhibiting isoflavonoids formation in Streptomyces sp. 20747 strain.

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양파껍질에서 분리한 플라보놀의 Xanthine Oxidase 저해기작 (Inhibition of Xanthine Oxidase by Flavonols from Onion Skin)

  • 서형주;나경수;배송환;손홍수;정수현
    • 한국식품영양과학회지
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    • 제27권4호
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    • pp.693-697
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    • 1998
  • The influence of flavonols from onion skin on xanthine oxidase was investigated. Methanol extract was showed 12.8% of yield, 661.3mg% of flavonoids contents and 88.7% of inhibitory effect on xanthine oxidase F1 and F2 fractions were obtained from the methanol extract by ODS and Sephadex LH-20 chromatography. F1 and F2 fractions flavonols(3-OH free) identified by UV/visible spectroscopy. Inhibitory effect of F1 and F2 on xanthine oxidase were increased with increasing concentration. IC50s of F1 and F2 were 0.95$\mu\textrm{g}$ and 0.67$\mu\textrm{g}$, respectively. To confirm the specificity of F1 and F2 against xanthine oxidase, albumin was added to the reaction mixture. The inhibition of F1 and F2 may be due to specific binding to xanthine oxidase. The modes of their inhibitions were of mixed type with respect to xanthine as a substrate.

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P2O3-PbO-SiO2-Al2O3계 회로기판용 glass ceramics의 제조 및 특성평가 (manufacture and Characterization of Glass Ceramics of P2O3-PbO-SiO2-Al2O3 System for Ic Substrate)

  • 김용철
    • 마이크로전자및패키징학회지
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    • 제4권2호
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    • pp.55-62
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    • 1997
  • P2O3-PbO-SiO2-Al2O3계 조성을 이용하여 저온에서 소결이 가증하며 열팽창계수와 유전율이 낮은 회로기판용 glass ceramics를 제조하고자 하였다. 155$0^{\circ}C$에서 2시간 동안 용 융하여 제조한 모유리의열팽창 거동을 확인하기 위하여 TMA로 열분석을 실시하였으며 이 유리를 분말화하여 80$0^{\circ}C$에서 열처리 하였다. 이때 cristobalite 형성억제제로 Ga2O3를 사용 하였으며 Ga2O3 첨가량에 따른 억제 영향을 XRD를 통행 확인하였다. Ga2O3를 첨가한 유리 분말로 pellet을 제조하여 열처리를 하였고 소결시편의 표면을 SEM을 통해 관찰하였다. 열 처리한 pellet에 silver paste를 screen printing하여 유전율을 측정하였으며 조성에 따른 유 전율의 변화를 확인하였다.

Bonding and Etchback Silicon-on-Diamond Technology

  • Jin, Zengsun;Gu, Changzhi;Meng, Qiang;Lu, Xiangyi;Zou, Guangtian;Lu, Jianxial;Yao, Da;Su, Xiudi;Xu, Zhongde
    • The Korean Journal of Ceramics
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    • 제3권1호
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    • pp.18-20
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    • 1997
  • The fabrication process of silicon-diamond(SOD) structure wafer were studied. Microwave plasma chemical vapor deposition (MWPCVD) and annealing technology were used to synthesize diamond film with high resistivity and thermal conductivity. Bonding and etchback silicon-on-diamond (BESOD) were utilized to form supporting substrate and single silicon thin layer of SOD wafer. At last, a SOD structure wafer with 0.3~1$\mu\textrm{m}$ silicon film and 2$\mu\textrm{m}$ diamond film was prepared. The characteristics of radiation for a CMOS integrated circuit (IC) fabricated by SOD wafer were studied.

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Syntheses of Resveratrol and its Hydroxylated Derivatives as Radical Scavenger and Tyrosinase Inhibitor

  • Lee, Hyun-Suck;Lee, Byung-Won;Kim, Mi-Ran;Jun, Jong-Gab
    • Bulletin of the Korean Chemical Society
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    • 제31권4호
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    • pp.971-975
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    • 2010
  • Eight hydroxylated stilbene derivatives including resveratrol, desoxyrhapontigenin and piceatannol as potential radical scavenger and tyrosinase inhibitor are synthesized using optimized Wittig-Horner reaction for excellent trans-selectivity in good yields. Antioxidant activity was tested against ABTS radical and tyrosinase inhibitory activity was performed with L-tyrosine as the substrate based on previous procedure with some modification. In general, catecholic stilbenes showed stronger activity against ABTS radical and resorcinolic moiety showed stronger tyrosinase inhibitory activity. Synthetic piceatannol which containing both catecholic and resorcinolic moieties showed the strongest activity in both as ABTS radical scavenger and tyrosinase inhibitor with $IC_{50}$ values of 4.1 and $8.6\;{\mu}M$, respectively.

Prolyl Endopeptidase Inhibitors from Green Tea

  • Kim, Jin-Hui;Kim, Sang-In;Song, Kyung-Sik
    • Archives of Pharmacal Research
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    • 제24권4호
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    • pp.292-296
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    • 2001
  • Three prolyl endopeptidase (PEP) inhibitors were isolated from the methanolic extract of green tea leaves. They were identified as (-)-epigallocatechin gallate, (-)-epicatechin gallate, and (+)-gallucatechin gallate with the $IC_{50}$ values of 1.42${\times}$$10^{-4}$mM, $1.02{\times}10^{-2}$mM, and $1.09{\times}10^{-4}$mM, respectively. They were non-competitive with a substrate in Dixon plots and did not show any significant effects against other serine proteases such as elastase, trypsin, and chymotrypsin, suggesting that they were relatively specific inhibitors against PER The isolated compounds are expected to be useful for preventing and curing of Alzheimer's disease.

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저온 소결성 세라믹 기판재료 (Low Temperature Firing Ceramic Substrates for IC Package)

  • 김정돈;손용배;주기태;장성도
    • 한국세라믹학회지
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    • 제29권2호
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    • pp.83-88
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    • 1992
  • New ceramic substrates firable at low temperature (<1000$^{\circ}C$) were prepared with mixture of alumina and glass powders in CaO-Al2O3-SiO2 system. The substrate of alumina 40 wt% and glass 60 wt%, which was fired between 900∼1000$^{\circ}C$, shows low dielectric constant (5∼8 at 1 MHz), specific gravity of 3.10, relatively low thermal expansion coefficient (5.5${\times}$10-6/$^{\circ}C$ at 40∼500$^{\circ}C$) and excellent surface roughness (0.4∼0.5 ${\mu}$Ra). These properties were thought to be superior to those of conventional Al2O3 ceramic substrates.

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IC소자용 질화 텅스텐 박막의 면저항 특성 (The Sheet Resistance Properties of Tungsten Nitride Thin films for Intergrated Circuit)

  • 이우선;정용호;김남오;정종상;유병수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1997년도 추계학술대회 논문집
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    • pp.94-97
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    • 1997
  • We investigated the sheet resistance properties of tungsten nitride thin films deposited by RF and DC sputtering system. It deposited at various conditions that determine the sheet resistance. The properties of the sheet resistance of these films were measured under various conditions. Sheet resistance analysed under the flow rate of the argon gas and contents of nitrogen from nitrogen-argon gas mixtures. We found that these sheet resistance were largely depend on the temperature of substrate, gas flow rate and RF power. Very high and low sheet resistance of tungsten films obtained by DC sputtering. As the increase of contents of nitrogen gas obtained from nitrogen-argon gas mixture, tungsten nitride thin films deposited by the reactive DC sputtering and the sheet resistance of these films were increased.

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LTCC 기판위에 MEMS 인덕터 특성 연구 (Study of parameters of MEMS inductor on the LTCC substrate)

  • 박제영;차두열;김성태;강민석;여동훈;김종희;장성필
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.258-258
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    • 2007
  • 일반적인 CMOS공정으로는 높은 주파수 대역에서 높은 Q factor를 갖는 인덕터를 구현하는데 어렵고 이에 반해 RF ICs는 갈수록 high Q를 가지는 인덕터가 요구되고 있다. 이를 LTCC 기판 위에 인덕터를 구현했을 때 놓은 주파수 대역에서 성능을 알아보기 위해 모의 실험하였고, 실제로 구현을 하여 측정결과를 비교해 보았다. LTCC 기판위에 인덕터를 구현 하였을 때 실리콘, 유리 기판위에 인덕터를 구현하였을 때보다 더 높은 Q 값을 측정할 수 있었다. 5GHz 대역에서 실리콘, 유리, LTCC 기판에서 각각 12, 33, 51에 값을 확인할 수 있었다.

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WiFi용 스위치 칩 내장형 기판 기술에 관한 연구 (The Fabrication and Characterization of Embedded Switch Chip in Board for WiFi Application)

  • 박세훈;유종인;김준철;윤제현;강남기;박종철
    • 마이크로전자및패키징학회지
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    • 제15권3호
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    • pp.53-58
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    • 2008
  • 본 연구에서는 상용화된 2.4 GHz 영역대에서 사용되어지는 WiFi용 DPDT(Double Pole Double throw) switch 칩을 laser 비아 가공과 도금 공정을 이용하여 폴리머 기판내에 내장시켜 그 특성을 분석하였으며 통상적으로 실장되는 wire 본딩방식으로 패키징된 기판과 특성차이를 분석 비교하였다. 폴리머는 FR4기판과 아지노 모토사의 ABF(Ajinomoto build up film)를 이용하여 패턴도금법으로 회로를 형성하였다. ABF공정의 최적화를 위해 폴리머의 경화정토를 DSC (Differenntial Scanning Calorimetry) 및 SEM (Scanning Electron microscope)으로 분석하여 경화도에 따라 도금된 구리패턴과의 접착력을 평가하였다. ABF의 가경화도가 $80\sim90%$일 경우 구리층과 최적의 접착강도를 보였으며 진공 열압착공정을 통해 기공(void)없이 칩을 내장할 수 있었다. 내장된 기관과 와이어 본딩된 기판의 측정은 S 파라미터를 이용하여 삽입손실과 반사손실을 비교 분석하였으며 그 결과 삽입손실은 두 경우 유사하게 나타났지만 반사손실의 경우 칩이 내장된 경우 6 GHz 까지 -25 dB 이하로 안정적으로 나오는 것을 확인할 수 있었다.

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