• 대한치과보철학회지
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• 제45권1호
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• pp.131-143
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• 2007

Statement of the problem: In case of poor bone quality or immediately loaded implant, various strategies have been developed focusing on the surface of materials to improve direct implant fixation to the bone. The microscopic properties of implant surfaces play a major role in the osseous healing of dental implant. Purpose of study: This study was undertaken to evaluate bone response of ion beam-assisted deposition(IBAD) of hydroxyapatite(HA) on the anodized surface of subperiosteal titanium implants. Material and methods: Two half doughnut shape subperiosteal titanium implants were made. The control group was treated with Anodized surface treatment and the test group was treated with IBAD of HA on control surface. Then two implants inserted together into the subperiosteum of the skull of 30 rats and histological response around implant was observed under LM(light microscope) and TEM(transmission electron microscope) on 4th, 6th and 8th week. Results: Many subperiosteal implants were fixed with fibrous connective tissue not with bony tissue because of weak primary stability. The control group observed poor bone response and there was no significant change at any observation time. However the test group showed advanced bone formation and showed direct bone to implant contact under LM on 8th week. The test group observed much rER in the cell of osteoblast but the control group showed little rER under TEM. Conclusions: The test group showed better bone formation than the control group at the condition of weak primary stability. With these results IBAD surface treatment method on Anodized surface, may be good effect at the condition of weak primary stability.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2006년도 High Temperature Superconductivity Vol.XVI
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• pp.65-65
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• 2006

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1372-1375
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• 2007

MgO thin films were deposited by $O^+$ IBAD method and results showed assisting oxygen ion beam energy plays a significant role in characteristics of MgO thin films. The lowest firing inception voltage, the highest brightness and the highest luminous efficiency were obtained when oxygen ion beam energy was 300 eV.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.91-91
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• 2004

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2004년도 High Temperature Superconductivity Vol.XIV
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• pp.92-92
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• 2004

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2008년도 High Temperature Superconductivity Vol.XVIII
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• pp.71-71
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• 2008

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2005년도 High Temperature Superconductivity Vol.XV
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• pp.81-81
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• 2005

• Progress in Superconductivity
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• 제13권2호
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• pp.127-132
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• 2011

Many research groups have been manufacturing coated conductor by various processes such as PLD, MOD, and MOCVD, but the methods with production cost suitable for wide and massive application of coated conductor did not develop yet. Spray pyrolysis method adopting ultrasonic atomization was tried as one of the possible option. GdBCO precursor films have been deposited on IBAD substrate by spray pyrolysis method at low temperature and converted to GdBCO by post heat treatment. Ultrasonic atomization was used to generate fine droplets from precursor solution of Gd, Ba, and Cu nitrate dissolved in water. Primary GdBCO films were deposited at $500^{\circ}C$ and oxygen partial pressure of 1 torr. After that, the films were converted at various temperatures and low oxygen partial pressures. C-Axis oriented films were obtained IBAD substrates at conversion temperature of around $870^{\circ}C$ and oxygen partial pressures of 500 mtorr ~ 1 torr in a vacuum. Thick c-axis epitaxial film with the thickness of 0.4 ~ 0.5 ${\mu}m$ was obtained on IBAD substrate. C-axis epitaxial GdBCO films were successfully prepared by ex-situ methods using nitrate precursors on IBAD metal substrate. Converted GdBCO films have very dense microstructures with good grain connectivity. EDS composition analysis of the film showed a number of Cu-rich phase in surface. The precursor solution having high copper concent with the composition of Gd : Ba : Cu = 1 : 2 : 4 showed the better grain connectivity and electrical conductivity.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.297-297
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• 2008

Buffer layers play an important role in the development of high critical current density coated conductor. $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ buffer layers were compatible with MgO surfaces and also provide a good template for growing high current density REBCO(RE=Rare earth) films. Systematic studies on the influences of pulsed laser deposition parameters (deposition temperature, deposition pressure, processing gas, laser energy density, etc.) on microstructure and texture properties of $LaMnO_3$, $SrTiO_3$ and $BaZrO_3$ films as buffer layer deposited on ion-beam assisted deposition MgO (IBAD_MgO) template by pulse laser deposition method, were carried out. These results will be presented together with the discussion on the possible use of this material in HTS coated conductor as buffer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1276-1279
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• 2005

The long-term stability of pentacene thin-film transistors (TFTs) encapsulated with a transparent $SnO_2$ thin-film prepared by ion beam assisted deposition (IBAD) was investigated. With a buffer layer of thermally evaporated 100 nm $SnO_2$ film deposited prior to IBAD process, our encapsulated OTFTs sustained its initial field-effect mobility up to one month and then gradually degraded showing only 37% reduction compared to 90% reduction of non-encapsulated OTFTs after 100 days in air ambient. The encapsulated OTFTs also exhibited superior on/off current ratio of over $10^5$ to that of the unprotected devices $({\sim}10^4)$ which was reduced from ${\sim}10^6$ before aging. Therefore, the enhanced long-term stability of our encapsulated OTFTs should be attributed to well protection of permeation of $H_2O$ and $O_2$ into the devices by the IBAD $SnO_2$ thin-film which could be used as an effective inorganic gas barrier for transparent organic electronic devices.