• Title/Summary/Keyword: I-V polarization

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Interface Engineering in Quasi-Magnetic Tunnel Junctions with an Organic Barrier

  • Choi, Deung-Jang;Lee, Nyun-Jong;Kim, Tae-Hee
    • Journal of Magnetics
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    • v.15 no.4
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    • pp.185-189
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    • 2010
  • Spin polarized tunneling through a hybrid tunnel barrier of a Spin filter (SF) based on a EuO ferro-magnetic semiconductor and an organic semiconductor (OSC) (rubrene in this case) was investigated. For quasi-magnetic tunnel junction (MTJ) structures, such as Co/rubrene/EuO/Al, we observed a strong spin filtering effect of the EuO layer exhibiting I-V curves with high spin polarization (P) of up to 99% measured at 4 K. However, a magnetoresistance (MR) value of 9% was obtained at 4.2 K. The low MR compared to the high P could be attributed to spin scattering caused by structural defects at the interface between the EuO and rubrene, due to nonstoichiometry in the EuO.

Evaluation of Insulation Condition for High Voltage Induction Motor (고압유도전동기의 절연상태 평가)

  • Lee, Kwang-Ho;Lim, Jae-Il;Kim, Ki-Won;Jung, Jin-Dal;Lee, Eun-Woong
    • Proceedings of the KIEE Conference
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    • 2003.07b
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    • pp.783-785
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    • 2003
  • This test was performed to assess the insulation deterioration condition of the stator winding of 3.3kV class induction motors which have been in service for 15 years after being installed in 1988. The insulation diagnostic tests include resistance, polarization index(P.I). dissipation factor(${\Delta}tan{\delta}$) and maximum partial discharges(Qmax). The results of diagnostic tests were compared to the visual inspection in overhaul.

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Constraints on dark radiation from cosmological probes

  • Rossi, Graziano;Yeche, Christophe;Palanque-Delabrouille, Nathalie;Lesgourgues, Julien
    • The Bulletin of The Korean Astronomical Society
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    • v.40 no.1
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    • pp.44.1-44.1
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    • 2015
  • We present joint constraints on the number of effective neutrino species $N_{eff}$ and the sum of neutrino masses ${\Sigma}m_{\nu}$, based on a technique which exploits the full information contained in the one-dimensional Lyman-${\alpha}$ forest flux power spectrum, complemented by additional cosmological probes. In particular, we obtain $N_{eff}=2.91{\pm}0.22$ (95% CL) and ${\Sigma}m_{\nu}$ < 0.15 eV (95% CL) when we combine BOSS Lyman-${\alpha}$ forest data with CMB (Planck+ACT+SPT+WMAP polarization) measurements, and $N_{eff}=2.88{\pm}0.20$ (95% CL) and ${Sigma}m_{\nu}$ < 0.14 eV (95% CL) when we further add baryon acoustic oscillations. Our results tend to favor the normal hierarchy scenario for the masses of the active neutrino species, provide strong evidence for the Cosmic Neutrino Background from $N_{eff}{\approx}3$($N_{eff}=0$ is rejected at more than $14{\sigma}$), and rule out the possibility of a sterile neutrino thermalized with active neutrinos (i.e., $N_{eff}=4$) - or more generally any decoupled relativistic relic with $${\Delta}N_{eff}{\sim_=}1$$ - at a significance of over $5{\sigma}$, the strongest bound to date, implying that there is no need for exotic neutrino physics in the concordance ${\Lambda}CDM$ model.

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Properties of $Sr_{0.8}Bi_{2.3}{(Ta_{1-x}Nb_{x})}_{2}O_{9+{\alpha}}$ Thin Films

  • Park, Sang-Jun;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.1 no.1
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    • pp.22-25
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    • 2000
  • Polycrystalline SBTN layered ferroelectric thin film with various Nb mole ratios were prepared by sol-gel method Pt/ $SiO_2$/Si (100) substrates. The films were annealed at different temperature and characterized in terms of phase and microstructure. The films were crystallized with a high (105) diffraction intensity and had rodike structure, SBTN films fired at 800$^{circ}C$ revealed standard hysteresis loops with no fatigue for up to 10$^{10}$ cycles. At an applied voltage of 5V the dielectric constant($varepsilon$) , dissipation factor (tan $delta$), remanent polarization(ZPr) and coercive field(Ec) of typical S $r_{0.8}$B $i_{2.3}$(T $a_{1-x}$ N $b_{x}$) $O_{9+}$$alpha$/ thin film(x=0.1) prepared on Pt/ $SiO_2$/Si (100) were about 277.7, 0.042, 3.74$mu$C/$textrm{cm}^2$, and 24.8kv/cm respectively.ly.y. respectively.ly.y.y..

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Role of Radio Frequency and Microwaves in Magnetic Fusion Plasma Research

  • Park, Hyeon K.
    • Journal of electromagnetic engineering and science
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    • v.17 no.4
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    • pp.169-177
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    • 2017
  • The role of electromagnetic (EM) waves in magnetic fusion plasma-ranging from radio frequency (RF) to microwaves-has been extremely important, and understanding of EM wave propagation and related technology in this field has significantly advanced magnetic fusion plasma research. Auxiliary heating and current drive systems, aided by various forms of high-power RF and microwave sources, have contributed to achieving the required steady-state operation of plasmas with high temperatures (i.e., up to approximately 10 keV; 1 eV=10000 K) that are suitable for future fusion reactors. Here, various resonance values and cut-off characteristics of wave propagation in plasmas with a nonuniform magnetic field are used to optimize the efficiency of heating and current drive systems. In diagnostic applications, passive emissions and active sources in this frequency range are used to measure plasma parameters and dynamics; in particular, measurements of electron cyclotron emissions (ECEs) provide profile information regarding electron temperature. Recent developments in state-of-the-art 2D microwave imaging systems that measure fluctuations in electron temperature and density are largely based on ECE. The scattering process, phase delays, reflection/diffraction, and the polarization of actively launched EM waves provide us with the physics of magnetohydrodynamic instabilities and transport physics.

Operating Characteristics of Direct Methanol Fuel Cell Based on Pt-Ru/C Anode Catalyst (Pt-Ru/C 촉매를 이용한 직접메탄을 연료전지 운전 특성)

  • Jung, D.H.;Lee, C.H.;Kim, C.S.;Chun, Y.G.;Shin, D.R.
    • Proceedings of the KIEE Conference
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    • 1997.07d
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    • pp.1252-1254
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    • 1997
  • Direct methanol fuel cell based on a proton-exchange membrane electrolyte was investigated. 60% Pt-Ru/C and 60%Pt/C catalysts were employed for methanol oxidation and oxygen reduction, respectively. Morphologies of the catalysts were investigated by x-ray power diffraction, energy dispersive x-ray spectroscopy, and transmission microscopy. Electrochemical characteristics of the catalysts were tested by using cyclic voltametry technique. I-V characteristics of the fuel cell were tested by changing methanol concentration, temperature, and Nafion type as a proton-exchange membrane electrolyte. AC impedance technique was used to investigate the electrochemical performance of the fuel cell. The performance of single cell was enhance with increasing cell temperature. High operation temperature attributed to the combined effects of the reduction of ohmic resistance and polarization. High cell voltage was obtained from the concentration of 205M methanol. With Nafion 112, a current density of $230mA/cm^2$ at 0.55V was obtained from the concentration of 2.5M methanol.

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Retention and Fatigue Properties of MFS Devices using Ferroelectric $LiMbO_3$ Thin Films ($LiMbO_3$ 강유전체 박막을 이용한 MFS 디바이스의 Retention 및 Fatigue 특성)

  • 정순원;김채규;김용성;김진규;이남열;김광호;유병곤;이원재
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.17-20
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    • 1999
  • The retention and fatigue properties of ferroelectric LiNbO$_3$ thin films were studied. Metal-ferroelectric-semiconductor(MFS) devices by using rapid thermal annealed LiNbO$_3$/Si structures were successfully fabricated and demonstrated nonvolatile memory operations of the MFS devices. The I$_{D}$-V$_{G}$ characteristics of MFSFET\`s showed a hysteresis loop due to the ferroelectric nature of the LiNbO$_3$ thin film. The ferroelectric capacitors showed practically no polarization degradation up to about 10$^{10}$ switching cycles when subjected to symmetric bipolar voltage pulse (peak-to-peak 6V, 50% duty cycle) in the 500kHz. The retention properties of the LiNbO$_3$ thin films were quite good up to about 10$^{3}$ s . s .

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Characteristics of the SrBi2Nb2O9 Thin Films Deposited by RF Magnetron Sputtering with Controlling of Bi Contents (RF마그네트론 스퍼터링 법에 의해 증착된 SrBi2Nb2O9 박막의 Bi 량의 조절에 따른 특성분석)

  • Lee, Jong-Han;Choi, Hoon-Sang;Sung, Hyun-Ju;Lim, Geun-Sik;Kwon, Young-Suk;Choi, In-Hoon;Son, Chang-Sik
    • Korean Journal of Materials Research
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    • v.12 no.12
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    • pp.962-966
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    • 2002
  • The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

Electrical Properties of Sol-Gel Derived Ferroelectric Bi3.35Sm0.65Ti3O12 Thin Films

  • Kang, Dong-Kyun;Cho, Tae-Jin;Kim, Byong-Ho
    • Journal of the Korean Ceramic Society
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    • v.42 no.3 s.274
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    • pp.150-154
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    • 2005
  • Ferroelectric $Bi_{3.35}Sm_{0.65}Ti_{3}O_{12}(BSmT)$ thin films were synthesized by sol-gel process. In this experiments, $Bi(TMHD)_{3},\;Sm_{5}(O^{i}Pr)_{13},\;Ti(O^{i}Pr)_4$ were used as precursors, which were dissolved in 2-methoxyethanol. The BSmT thin films were deposited on the Pt/TiO/SiO/Si substrates by spin-coating. Thereafter, the thin films with the thickness of 240 nm were annealed from 600 to $720^{\circ}C$ in oxygen atmosphere for 1 h, and post-annealed in oxygen atmosphere for 1 h after deposition of Pt electrode to enhance the electrical properties. To investigate the effects of Sm-substitution in the BTO thin films, the BTO and BSmT thin films were prepared, respectively. The remanent polarization and coercive voltage of the BSmT thin films annealed at $720^{\circ}C$ were $19.48{\mu}C/cm^2$ and 3.40 V, respectively.

Corrosion behaviors of plasma electrolytic oxidation (PEO) treated high-silicon aluminum alloys

  • Park, Deok-Yong;Chang, Chong-Hyun;Oh, Yong-Jun;Myung, Nosang V.;Yoo, Bongyoung
    • Journal of the Korean institute of surface engineering
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    • v.55 no.3
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    • pp.143-155
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    • 2022
  • Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na2SiO3, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al2Cu phases whereas Al2Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al2O3 and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.