• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.6
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• pp.24-33
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• 2000

Switching behaviour of the ferroelectric thin film and device characteristics of the MFSFET(Metal-Ferroelectric-Semiconductor FET) are simulated with taking into account the accumulation of oxygen vacancies near interface between the ferroelectric thin film and the bottom electrode caused by the progress of fatigue. In our switching model, relative switched charge is 0.74 nC before fatigue, but after the progress of fatigue it reduces to 0.15 nC with the generation of oxygen vacancies. It indicates that the generation of oxygen vacancies strongly suppresses polarization reversal. $C-V_G\;and\;I_D-V_G$ curves in our MFSFET device model exhibit the memory window of 2 V and show the accumulation, the depletion and the inversion regions in capacitance characteristic clearly. The difference of saturation drain current of the device before fatigue in shown by the dual threshold voltages in $I_D-V_G$ curve as 6nA/$cm^2$ and decreases as much as 50% after fatigue. Decrease of the difference of saturation drain currents by fatigue implies that the accumulation of oxygen vacancies with the fatigue should be avoided in the device application. Our simulation model is expected to play an important role in estimation of the behavior of MFSFET device with various ferroelectric thin films.

• The Bulletin of The Korean Astronomical Society
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• v.46 no.1
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• pp.45.2-46
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• 2021

The Hayabusa 2 mission target asteroid (162173) Ryugu is a near-Earth, carbonaceous (C-type) asteroid. Before the arrival, this asteroid is expected to be covered with mm- to cm- sized grains through the thermal infrared observations [1]. These grains are widely understood to be formed by past impacts with other celestial bodies and fractures induced by thermal fatigue [2]. However, the close-up images by the MASCOT lander showed lumpy boulders but no abundant fine grains [3]. Morota et al. suggested that there would be submillimeter particles on the top of these boulders but not resolved by Hayabusa 2's onboard instruments [4]. Hence, we conducted polarimetry of Ryugu to investigate microscopic grain sizes on its surface. Polarimetry is a powerful tool to estimate physical properties such as albedo and grain size. Especially, it is known that the maximum polarization degree (Pmax) and the geometric albedo (pV) show an empirical relationship depending on surface grain sizes [5]. We observed Ryugu from UT 2020 November 30 to December 10 at large phase angles (ranging from 78.5 to 89.7 degrees) to derive Pmax. We modified TRIPOL (Triple Range Imager and POLarimeter, [6]) to attach to the 1.8-m telescope at the Bohyunsan Optical Astronomy Observatory (BOAO). With this instrument, we observed the asteroid and determined linear polarization degrees at the Rc-band filter. We obtained sufficient data sets from 7 nights at this observatory to determine the Pmax value, and collaborated with other observatories in Japan (i.e., Hokkaido University, Higashi-Hiroshima, and Nishi-Harima) to acquire linear polarization degrees of the asteroid from total 24 nights observations with large phase angle coverage (From 28 to 104 degrees). The observational results have been published in Kuroda et al. (2021) [7]. We thus found the dominance of submillimeter particles on the surface of Ryugu from the comparison with other meteorite samples from the campaign observation. In this presentation, we report our activity to modify the TRIPOL for the 1.8-m telescope and the polarimetric performance. We also examine the rotational variability of the polarization degree using the TRIPOL data.

• Restorative Dentistry and Endodontics
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• v.18 no.2
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• pp.431-445
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• 1993

The purpose of this study was to observe corrosion characteristics of six dental amalgams and was to analyse corrosion products electrochemically. After each amalgam alloy and Hg was triturated as the direction of the manufacturer by using mechanical amalgamator, the triturated mass was inserted into the cylinderical metal mold ($12{\times}10mm$) and was condensed with 160kg/$cm^2$ by using the hydrolic press. The specimen was removed from the mold and was stored at room temperature for 1 week, and was polished with amalgam polishing kit. The anodic and cathodic polarization curve was obtained by using cyclic voltammetric method with 3-electrode potentiostat in saline for each amalgam and Ag, Sn, Cu plate specimen at $37{\pm}0.5^{\circ}C$. The potential sweep range was -1.7V~0. 4V(vs SCE) in working electrode and scan rate was 50mV/s and the exposed surface area of each specimen to the electrolytic solution was $0.79cm^2$. The results were as follows. 1. In anodic-cathodic polarization curve of amalgam specimens, two anodic current rising areas and two cathodic current peaks were obtained at the low Cu amalgam(CF, CS) specimen and three anodic current rising areas and three cathodic current peaks were obtained at the high Cu amalgam (TY, DS, HV) specimen. 2. As this compared with the anodic and cathodic current peak potentials of Sn, Cu and Ag specimen, the first cathodic current peak I c was caused by the reduction of divalent tin salt, second cathodic current peak IIIc results from the reduction of quadravalent tin salt, and third cathodic current peak me results from the reduction of copper salt. 3. As reverse potential sweeping was done repeatedly, anodic current was decreased slightly in all amalgam specimens.

• Journal of the Korean Ceramic Society
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• v.40 no.1
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• pp.46-51
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• 2003

Ferroelectric $Sr_{0.7}Bi_{2.1}Ta_{2.0}O_9$ thin films with 200 nm thicknesses were deposited on $Pt/Ti/SiO_2/Si$ substrate by liquid delivery MOCVD process. In these experiments, $Sr(TMHD)_2{\cdot}pmdeta,\; Bi(ph)_3$ and $Ta(O^i/Pr)_4(TMHD)$ were used as precursors, which were dissolved in n-butyl acetate and pentamethyldiethylenetriamine. Substrate temperature and reactor pressure of this experiment was $570^{\circ}C$and 5 Torr, respectively. The remanent polarization value (2Pr) of SBT thin film with annealed at $780^{\circ}C$was$7.247{\mu}C/cm^2$and$8.485 {\mu}C/cm^2$by applying 3 V and 5 V, respectively.

• Journal of the Korean Vacuum Society
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• v.6 no.1
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• pp.36-43
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• 1997

FECAPS(ferroelectric capacitors) have been fabricated by RF magnetron sputtering deposition of 3000$\AA$ PZT thin films on the Pt/Ti/$SiO_2$/Si substrates and post-annealing with the temperature of $550^{\circ}C$~$650^{\circ}C$ for 10 sec~50 sec in a RTA system. The electrical characteristics of the fabricated capacitors showed the highest dielectric constant and remanent polarization[${\varepsilon_r(1kHz)$=690, $2P_r$(-5V~5V sweep)=22$\mu$C/$ \textrm{cm}^2$] in the samples annealed at $650^{\circ}C$ for 30 sec, while the lowest tangent loss and leakage current [$tan\delta(\ge10kHz)\le0.02, \; J_i(5V)=3\mu\textrm{A}/\textrm{cm}^2$]in the samples annealed at $600^{\circ}C$ for 30 sec.

• Proceedings of the KIEE Conference
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• 1990.11a
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• pp.161-165
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• 1990

KEPCO has experienced eight oil leakage failures due to POF cable corrosion in the 154KV underground POF cable transmission line since the line was operated in 1976. Experimentally, We have verified that the cause of the failure is electrolytic corrosion of the cable owing to subway leakage current. For the countermeasure, We adopted the total Cathodic Protection System by the use of Victim Anode, Forced Drainage Method and Impressed Current Method with polarization cell.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.368-369
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• 2006

Ferroelectric thin films have attracted much attention for applications in nonvolatile ferroelectric random access memories(NVFeRAM) from the view points of high speed operation, low power consumption, and large scale Integration[1,2]. Among the FRAM, BLT is of particular interest. as it is not only crystallized at relatively low processing temperature, but also shows highly fatigue resistance and large remanent polarization Meanwhile, these submicron ferroelectric capacitors were fabricated by a damascene process using Chemical mechanical polishing (CMP). BLT capacitors were practicable by a damascene process using CMP. The P-E hysteresis were measured under an applied bias of ${\pm}5V$ by using an RT66A measurement system. The electric properties such as I-V were determined by using HP4155A analysers.

• ETRI Journal
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• v.20 no.2
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• pp.241-249
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• 1998

The structure and electrical characteristics of metal-ferroelectric-semiconductor FET(MFSFET) for a single transistor memory are presented. The MFSFET was comprised of polysilicon islands as source/drain electrodes and $BaMgF_4$ film as a gate dielectric. The polysilicon source and drain were built-up prior to the formation of the ferroelectric film to suppress a degradation of the film due to high thermal cycles. From the MFS capacitor, the remnant polarization and coercive field were measured to be about $0.6{\mu}C/cm^2$ and 100 kV/cm, respectively. The fabricated MFSFETs also showed good hysteretic I-V curves, while the current levels disperse probably due to film cracking or bad adhesion between the film and the Al electrode.

• Journal of Korean Dental Science
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• v.11 no.2
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• pp.71-81
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• 2018

Purpose: The purpose of this study was to investigate the corrosion behaviors of dental implant alloy after microsized surface modification in electrolytes containing Mn ion. Materials and Methods: $Mn-TiO_2$ coatings were prepared on the Ti-6Al-4V alloy for dental implants using a plasma electrolytic oxidation (PEO) method carried out in electrolytes containing different concentrations of Mn, namely, 0%, 5%, and 20%. Potentiodynamic method was employed to examine the corrosion behaviors, and the alternatingcurrent (AC) impedance behaviors were examined in 0.9% NaCl solution at $36.5^{\circ}C{\pm}1.0^{\circ}C$ using a potentiostat and an electrochemical impedance spectroscope. The potentiodynamic test was performed with a scanning rate of $1.667mV\;s^{-1}$ from -1,500 to 2,000 mV. A frequency range of $10^{-1}$ to $10^5Hz$ was used for the electrochemical impedance spectroscopy (EIS) measurements. The amplitude of the AC signal was 10 mV, and 5 points per decade were used. The morphology and structure of the samples were examined using field-emission scanning electron microscopy and thin-film X-ray diffraction. The elemental analysis was performed using energy-dispersive X-ray spectroscopy. Result: The PEO-treated surface exhibited an irregular pore shape, and the pore size and number of the pores increased with an increase in the Mn concentration. For the PEO-treated surface, a higher corrosion current density ($I_{corr}$) and a lower corrosion potential ($E_{corr}$) was obtained as compared to that of the bulk surface. However, the current density in the passive regions ($I_{pass}$) was found to be more stable for the PEO-treated surface than that of the bulk surface. As the Mn concentration increased, the capacitance values of the outer porous layer and the barrier layer decreased, and the polarization resistance of the barrier layers increased. In the case of the Mn/Ca-P coatings, the corroded surface was found to be covered with corrosion products. Conclusion: It is confirmed that corrosion resistance and polarization resistance of PEO-treated alloy increased as Mn content increased, and PEO-treated surface showed lower current density in the passive region.

• Journal of Electrochemical Science and Technology
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• v.7 no.1
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• pp.58-67
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• 2016

The corrosion behavior of duplex stainless steel AISI 2205 was investigated in ethylene glycol-water mixture in the presence of 50 W/V % LiBr at different concentrations and different temperatures. Cyclic polarization, impedance measurements and Mott-Schottky analysis were used to study the corrosion behavior the semi conductive properties of the passive films. The results showed that with increasing in the ethylene glycol concentration to 10 V/V%, the corrosion rate of the steel alloy substrate increased. In higher concentrations of ethylene glycol, corrosion current of steel decreased. The results of scanning electron microscopy of electrode surface confirmed the electrochemical tests. Electrochemical experiment showed that duplex steel was stable for pitting corrosion in this environment. The increase in the ethylene glycol concentration led to increasing the susceptibility to pitting corrosion. The corrosion current increased as the temperature rise and also pitting potentials and repassivation potentials shifted towards the less positive values as the temperature increased. According to Mott-Schottky analysis, passive films of stainless steel at the different temperatures showed both n-type and p-type semiconductor behavior in different potential.