• Title/Summary/Keyword: I-V Characteristic

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Characteristic of $TiO_2$ Thin Film for Nonvolatile Memory Device's Gate-Blocking Layer (비휘발성 메모리 소자의 Gate-Blocking Layer 적용을 위한 $TiO_2$ 박막 특성)

  • Choi, Hak-Mo;Lee, Kwang-Soo;Lee, Jun-Sin
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.199-200
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    • 2007
  • 본 논문에서는 $SiO_2$ Gate 유전체를 대체할 재료의 하나인 $TiO_2$, Gate 유전체의 기판 증착 온도에 따른 특성을 알아보고자 한다. 디바이스의 고집적화가 높아짐에 따라 얇은 두께의 Gate 유전체의 절대적인 필요에 따라 두께를 최소화하면서 유전율은 높아 전기적 특성이 우수한 소재를 찾게 되었다. 본 논문의 실험에서는 비휘발성 메모리 소자 제작시 Gate Blocking Layer 적용을 위해 High-k 물질인 $TiO_2$, 박막 증착 실험을 하였고, APCVD 방법을 사용하여 성장하였다. 증착 온도에 따른 I-V 특성을 분석하고 그에 따른 소자의 물리적 구조를 SEM을 통해 확인하면서 소자 제작시 최적의 온도를 찾고자 하였다.

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Improvement for Simulation of Device equipped with Heated Field Plate Using Analytic Model (분석적 모델을 이용한 Floated Field Plate구조가 있는 소자의 시뮬레이션 개선)

  • Byun, Dae-Seok;Kim, Han-Soo;Choi, Yearn-Ik;Han, Min-Koo
    • Proceedings of the KIEE Conference
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    • 1993.07b
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    • pp.1283-1285
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    • 1993
  • A new simulation method for a device including the Floated Field Plate(FFP) is proposed. The external resistance is connected with FFP in order to simulate FFP as a electrode. The numerical I-V characteristic obtained from MEDICI simulation shows fairly good results such as low leakage current and abrupt breakdown voltage curve. The convergence is improved conveniently compared with conventional method which utilize heavily-doped poly silicon as a electrode.

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Effect of the Biased Third Electrode of a Wire-Plate Type Plasma Reactor on Corona Discharge and Ozone Generation Characteristics (선대 평판형 플라즈마장치의 코로나 방전 및 오존발생 특성에 미치는 바이어스된 3전극의 영향)

  • Jung, Jae-Seung;Moon, Jae-Duk
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.4
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    • pp.648-652
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    • 2008
  • Corona discharge and ozone generation characteristics of a wire-plate plasma reactor, with a biased third electrode, have been investigated with an emphasis on the role of the bias voltage and frequency applied on the third electrode. It was found that the wire-plate plasma reactor, with the biased third electrode, had a switching characteristic on its I-V characteristics for negative and positive discharges, which is very different from that of a conventional wire-plate plasma reactor without the third electrode. As a result, the corona discharge and ozone generation characteristics of the proposed plasma reactor could be controlled by adjusting the bias voltage and frequency of the third electrode. The corona onset and breakdown voltages, and ozone generation and yield, were increased compared with those of without the third electrode. These, however, reveal the effectiveness of the biased third electrode.

Electrical characteristic of differential ternary chalcogenide thin films (칼코게나이드 3원계 박막에서의 전기적 특성에 관한 연구)

  • Yang, Sung-Jun;Shin, Kyung;Lee, Jae-Min;Chung, Hong-Bay
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07a
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    • pp.377-380
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    • 2004
  • The phase transition between amorphous and crystalline states in chalcogenide semiconductor films can controlled by electric pulses or pulsed laser beam; hence some chalcogenide semiconductor films can be applied to electrically write/erase nonvolatile memory devices, where the low conductive amorphous state and the high conductive crystalline state are assigned to binary states. GeSbTe(GST), AsSbTe(AST), SeSbTe(SST) used to phase change materials by appling electrical pulses. Thickness of ternary chalcogenide thin films have about 100nm. Upper and lower electrode were made of Al. It is compared with I-V characteristics after impress the variable pulses.

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Photo current Characteristic of CdTe/HgTe/CdTe Structured Nanoparticles (CdTe/HgTe/CdTe구조 나노입자의 광전류 특성)

  • Kim, Dong-Won;Cho, Kyoung-Ah;Kim, Hyun-Suk;Park, Byoung-Jun;Kim, Sang-Sig
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.07a
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    • pp.139-140
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    • 2005
  • The photocurrent characteristics of CdTe/HgTe/CdTe structured nanoparticles are studied. CdTe/HgTe/CdTe multilayer structured nanoparticles were synthesized by colloidal method. CdTe/HgTe/CdTe multilayer structured nanoparticles were characterized by x-ray diffraction, high-resolution transmission electron microscopy(HRTEM), absorbance and photoluminescence(PL). PL spectrum of CdTe/HgTe/CdTe multilayer structured nanoparticles exhibits a strong exciton bond in the near infrared range. The I-V curves and photoresponses revealed that CdTe/HgTe/CdTe multilayer structured nanoparticles are very prospective materials for the photodetectors.

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Performance Comparison of Different Solar Array Simulator Control by Ellipse Approximation (태양광패널 모사장치의 제어방식에 따른 소신호 특성 비교 분석)

  • Wellawatta, Thusitha;Seo, Young-Tae;Choi, Sung-Jin
    • The Transactions of the Korean Institute of Power Electronics
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    • v.26 no.1
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    • pp.16-24
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    • 2021
  • Solar array simulator (SAS) is essential equipment in testing and evaluating the power processing performance of a power conditioning system. However, the nonlinearity in the current(I)-voltage(V) characteristic makes the control loop design of SAS a challenging task. Conventionally, only the inner loop is usually considered in the control design approach. However, this study proves that the reference generation loop also interacts with the inner loop and plays a key role in the overall performance of the SAS. In this paper, the performance of voltage-mode control and impedance control, which are two of the most popular architectures for the SAS system, are reviewed and compared by multi-loop analysis.

The Study on Channel and Doping influence of MOSFET using TCAD (TCAD를 이용한 채널과 도핑 농도에 따른 MOSFET의 특성 분석)

  • 심성택;장광균;정정수;정학기;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2000.05a
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    • pp.470-473
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    • 2000
  • The metal-oxide-semiconductor field-effect transistor(MOSFET) has undergone many changes in the last decade in response to the constant demand for increased speed, decreased power, and increased patting density. The devices are scaled down day by day. Therefore, This paper investigates how MOSFET structures influence on transport properties in according to change of channel length and bias and, observes impact ionization between the drain and the gate. This paper proposes three models, i.e., conventional MOSFET, LDD MOSFET and EPI MOSFET. The gate lengths are 0.3$\mu\textrm{m}$ 0.15$\mu\textrm{m}$, 0.075$\mu\textrm{m}$ and scaling factor is λ = 2. We have presented MOSFET's characteristics such as I-V characteristic, impart ionization, electric field, using the TCAD. We have analyzed the adaptive channel and doping influences

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Parameter Study for the Analysis of Impact Characteristics considering Dynamic Material Properties (동적 물성치를 고려한 V.I. 충격인자의 영향 분석)

  • Lim, J.H.;Song, J.H.;Huh, H.;Park, W.J.;Oh, I.S.;Choe, J.W.
    • Proceedings of the KSME Conference
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    • 2001.06a
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    • pp.945-950
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    • 2001
  • Vacuum interrupters that is used in various switchgear components such as circuit breakers, distribution switches, contactors, etc. spreads the arc uniformly over the surface of the contacts. The electrode of vacuum interrupters is used sintered Cu-Cr material satisfied with good electrical and mechanical characteristics. Because the closing velocity is 1-3m/s, the deformation of the material of electrodes depends on the strain rate and the dynamic behavior of the sintered Cu-Cr material is a key to investigate the impact characteristics of the electrodes. The dynamic response of the material at the high strain-rate is obtained from the split Hopkinson pressure bar test using cylinder type specimens. Experimental results from both quasi-static and dynamic compressive tests with the split Hopkinson pressure bar apparatus are interpolated to construct the Johnson-Cook equation as the constitutive relation that should be applied to simulation of the dynamic behavior of electrodes. To evaluate impact characteristic of a vacuum interrupter, simulation is carried out with five parameters such as initial velocity, added mass of a movable electrode, wipe spring constant, initial offset of a wipe spring and virtual fixed spring constant.

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Surface treatment of ITO with Nd:YAG laser and OLED device characteristic (Nd:YAG 레이저로 표면처리된 ITO를 전극으로 한 유기EL 소자의 특성)

  • No, I.J.;Shin, P.K.;Kim, H.K.;Kim, Y.W.;Lim, Y.C.;Park, K.S.;Chung, M.Y.
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1359-1360
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    • 2006
  • lTO(Indium-Tin-Oxide) was used as anode material for OLED. Characteristics of ITO have great effect on efficiency of OLEDS(Organic light emitting diodes). ITO surface was treated by Nd:YAG laser in order to improve its chemical properties, wettability, adhesive property and to remove the surface contaminants while maintaining its original function. In this study, main purpose was to improve the efficiency of OLEDs by the ITO surface treatment: ITO surface was treated using a Nd:YAG(${\lambda}=266nm$, pulse) with a fixed power of 0.06[w] and various stage scanning velocities. Surface morphology of the ITO was investigated by AFM. Test OLEDs with surface treated ITO were fabricated by deposition of TPD (HTL), Ald3 (ETL/TML) and Al (cathode) thin films. Device performance of the OLEDs such as V-I-L was investigated using Source Measurement Unit (SMU: Keithly. Model 2400) and Luminance Measurement (TOPCON. BM-8).

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Design and Analysis of Power System for Buoy (브이용 전력시스템 설계 및 분석)

  • Jo, Kwan-Jun;Yoo, Hee-Han;Gug, Seung-Gi;Oh, Jin-Seok
    • Journal of Navigation and Port Research
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    • v.31 no.3 s.119
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    • pp.229-233
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    • 2007
  • This paper presents the performance of PV(Photovoltaic) system, the design of MPPT(Maximum Power Point Tracker). Output of PV power system is DC, and PV power system is linked to the DC bus. The current(I)-voltage(V) output characteristic of PV cells changes with solar irradiance and cell temperature as parameters. As various PV modules respond differently to each of the parameters cited above. Maximum output of PV modules am be achieved by MPPT(Maximum Power Point Tracker) algorithm This paper includes a discussion on the performance of PV module, MPPT algorithm and the influence of PV module angle.