• Proceeding of EDISON Challenge
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• 2015.03a
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• pp.357-364
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• 2015

In this work, we investigate the quantum effects exhibited from ultra-thin GAA(gate-all-around) Nanowire FETs for Sub 14nm Technology. We face designing challenges particularly short channel effects (SCE). However traditional MOSFET SCE models become invalid due to unexpected quantum effects. In this paper, we investigated various performance factors of the GAA Nanowire FET structure, which is promising future device. We observe a variety of quantum effects that are not seen when large scale. Such are source drain tunneling due to short channel lengths, drastic threshold voltage increase caused by quantum confinement for small channel area, leakage current through thin gate oxide by tunneling, induced source barrier lowering by fringing field from drain enhanced by high k dielectric, and lastly the I-V characteristic dependence on channel materials and transport orientations owing to quantum confinement and valley splitting. Understanding these quantum phenomena will guide to reducing SCEs for future sub 14nm devices.

• The Proceedings of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.13 no.2
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• pp.212-212
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• 1999

This paper proposed a high impedance fault detection method using a neural network on distribution lines. The v-I characteristic curve was obtained by high impedance fault data tested in various soil conditions. High impedance fault was simulated using EMTP. The pattern of High Impedance Fault on high density pebbles was taken as the learning model, and the neural network was valuated on various soil conditions. The average values after analyzing fault current by FFT of evenr·odd harmonics and fundamental rms were used for the neural network input. Test results were verified the validity of the proposed method.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.06a
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• pp.540-540
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• 2008

본 논문에서는 KOH 전해액을 이용하여 Cu 막의 부동태층의 형성을 I-V를 통해 평가하였으며, 이를 토대로 최적화된 전압과 시간을 알 수 있었다. 또한, SEM, EDS, XRD를 통해 표면 품질 및 성분 분석을 비교 분석하였다.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 1998.11a
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• pp.166-169
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• 1998

This paper represent about design of the controller for battery of fence with traffic controller for battery of fence with traffic auxiliary system for power supply using solar cell. Simulation is represents V-I and power characteristic by Pspice. This system is successfully operating with high clearness lights.

• Proceedings of the KIPE Conference
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• 2005.07a
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• pp.781-784
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• 2005

This paper is aimed at presenting a proton exchange membrane ( PEM ) fuel cell stack. The fuel cell electrical output voltage and current (V-I) characteristic is described for the first time by a simplified closed form suitable. The characteristics obtained from the simulation are compared with the experimental results on a Ballard commercial fuel cell stack as well as to the manufacturer given data.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1670-1672
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• 2000

The stability of ZnO-$Pr_{6}O_{11}$-CoO-$Cr_{2}O_{3}-Dy_{2}O_3$ based varistors with d.c. stress were investigated. ZnO varistor doped with 4.0 mol% $Dy_{2}O_3$ exhibited the highest nonlinear exponet, but stability was very poor because of low density. In particular, the varistor containing 0.5 mol% $Dy_{2}O_3$ showed very excellent V-I characteristic, which the nonlinear exponent was 67.39 and leakage current was 1.18 ${\mu}A$, and high stability.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.29-32
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• 2000

In this paper, an analytical model for I-V characteristics of a HEMTs is Proposed. The developed model takes into account the temperature dependence of drain current. In high-speed ICs for optical communication systems and mobile communication systems, temperature variation affects performance; for example the gain, efficiency in analog circuits and the delay time, power consumption and noise mrgin in digital circuits. To design such a circuit taking into account the temperature dependence of the current-voltage characteristic is indispensible. This model based on the analytical relation between surface carrier density and Fermi potential including temperature dependent coefficients.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process ws performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• Proceedings of the KIEE Conference
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• 1996.07b
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• pp.850-852
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• 1996

High impedance fault (HIF) is defined as fault that general overcurrent relay can't detect or interrupt, Especially when HIF occur under 15 kV, energized high voltage conductor results in fire hazard, equipment damage or personal threat. Because most HIF occur arc, HIF detection using arc is to increase. Numerical arc model can be applied in an electromagnetic transients program (EMTP) to reproduce the dynamic and random characteristic of arcs for any insulator arrangement, current and system voltage. It allows the representation of any network configuration to be investigated, so the digital simulation of arc faults through air can be substitute for demanding power arc test.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.2166-2168
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• 2005

This paper presents the frequency - dependent characteristics of leakage currents flowing through ZnO varistor. The leakage current - voltage (V-I) characteristic curves of the commercial ZnO varistor were measured. The resistive leakage current was increased with increasing the magnitude and frequency of the applied voltage in the low conduction region. The power losses of ZnO varistor increase as the frequency of applied voltage increases, because of the dielectric loss related to the frequency of the test voltage.