• 전력전자학회:학술대회논문집
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• 전력전자학회 1999년도 전력전자학술대회 논문집
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• pp.554-557
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• 1999

This paper represent about design of the controller for battery of Guide-Eye Sign Lamp with traffic auxiliary system for power supply using solar cell. Simulation is represents V-I and power characteristic by Mathematical & Design Center 6.3 & Qnet 2.1. This system is successfully operating with high clearness lights.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.317-320
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• 2003

As a convenient means for the characterization of the wall voltage and wall charge of AC PDPs during the sustain period, an equivalent circuit model for AC PDPs is presented. The equivalent circuit model for AC PDPs consists of capacitors and thyristors. The equivalent circuit model is based on the physical structure of the AC PDP and the I-V characteristic of the discharge space. This equivalent circuit model can be easily implemented in the standard simulators such as SPICE and can easily simulate the variation of the current, charge and voltage involved in AC PDPs as the supply voltage varies.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.408-411
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• 2004

The electrical stability against surge stress of ZPCCY-based varistors were investigated at different sintering times. Sintering time decreased the varistor voltage and nonlinear exponent from 279.6 to 179.1 and from 52.5 to 24.9, respectively. On the contrary, the leakage current and dielectric dissipation factor increased from 1.2 to 9.8 ${\mu}A$ and from 0.0461 to 0.0651 with increase of sintering time. For all varistors, the variation rates of V-I characteristic parameters against surge stress were affected in order of varistor voltage$\rightarrow$nonlnear exponent$\rightarrow$leakage current. On the whole, the electrical stability against surge stress increased with increasing sintering time. Conclusively, it is assumed that the varistor sintered for 2 h exhibited comparatively good characteristics, in view of overall characteristics.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2008년도 하계종합학술대회
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• pp.505-506
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• 2008

The direct methanol fuel cell (DMFC) is a promising power source for portable applications due to many advantages such as simple construction, compact design, high energy density, and relatively high energy-conversion efficiency. In this work, an electrochemical methanol sensor for monitoring the methanol concentration in direct methanol fuel cells was fabricated using a thin composite nafion membrane as the electrolyte. We have analyzed the I-V characteristic of the fabricated methanol sensor as a function of methanol concentration, catalyst electrode and platinum(Pt) dot.

• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.1073-1076
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• 2003

This paper shows the performance as a photodetector of InP/InGaAs HPT operated with a base bias and forntside optical injection through the emitter. InP/InGaAs HPT produced the high optical gain of about 16.2 where HPT is biased at Vc=1V, I$_{B}$=20$\mu$A with an input optical power of 2.4$\mu$W. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. The optical performance of InP/InGaAs HPT is an attractive to the PIN Photodetector for use in long wavelength optical receivers.s.

• Animal cells and systems
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• 제8권1호
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• pp.1-12
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• 2004

All copepodid stages and free-swimming adults of Ergasilus hypomesi Yamaguti collected from plankton samples from a brackish lake in Korea are described. The antennule remains a four-segmented appendage until copepodid V. The antenna of copepodid I carries a vestigial exopod. Sexual dimorphism first appears at copepodid IVwhose males bear primodial maxillipeds. Leg 5 also is sexually dimorphic from copepodid IV onwards, with its free segment bearing three setae in the female and two setae in the male. Morphological features of some appendages appearing during copepodid development are discussed. It is noticed that the early copepodids of the Ergasilidae show the characteristic setation on the biramous legs and proximal segments of the antennule.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2001년도 춘계종합학술대회
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• pp.321-324
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• 2001

MOSFET는 전력감소, 도핑농도 증가, 캐리어 속도 증가를 위해서 많은 변화를 가져왔다. 이러한 변화를 받아들이기 위해서, 채널의 길이와 공급전압이 감소해야만했으며, 그것으로 인해 소자가 더욱 작아지게 되었다. 본 논문에서는 이러한 변화를 두 가지의 시뮬레이터를 사용하여 비교 분석하였다. 사용되어진 시뮬레이터는 Micro-Tec과 ISE-TCAD이며, 본 논문에서 LDD(lightly-doped drain) MOSFET에 관하여 시뮬레이션 하였다. 게이트 길이는 180nm를 기준으로 MOSFET의 특성과 전계를 비교 분석하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 추계학술대회 논문집 Vol.14 No.1
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• pp.126-129
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• 2001

A p-n junction was obtained by the deposition of an n-type ZnO thin film on a p-type Zn-doped InP substrate. The Zn-doped InP substrate has been made by the diffusion of Zn with sealed ampoule technique. The ZnO deposition process was performed by pulsed laser deposition (PLD). The p-n junction was formed and showed a typical I-V characteristic. We will also discuss about the realization of an ultraviolet light-emitting diode (LED). The structure of n-ZnO/p-Zn-doped InP could be a good candidate for the realization of an ultraviolet light-emitting diode or an ultraviolet laser diode.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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• pp.6.2-8
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• 1996

The NO$_2$ GAS-detection characteristic of CuTBT (Copper-tetra-tert-butylphtha1ocyanine) LB films were investigated through a study of current-voltage (I-V) characteristics with a variation of number N of interdigital electrodes (N=1∼25). A concentration of 200ppm NO$_2$ gas was used. It was found that a conductance G increases monotonically as the number of interdigital electrode increases, and a sensitivity $\Delta$G ($\Delta$G=G$\_$gas//G$\_$air/) is at least higher than 50 and stable. As far as a sensitivity is concerned, the sensitivity when N=26 is greater than that when N=1 by 70 or so. It indicates that the number of interdigital electrodes affects the currents, sensitivity and stability.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1994년도 추계학술대회 논문집
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• pp.59-64
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• 1994

The Si-SiO$_2$interface trpas of the degraded short-channel SONOSFET memory devices were investigated using the charge pumping techniques. The degradation of devices with write/erase cycle appeared as the increase of the Si-SiO$_2$interface trap density. In order to determine the capture cross-section of the interface trap. I$\_$CP/-V$\_$GL/ characteristic curves were measured at different temperatures. Also, the spatial distributions of Si-SiO$_2$interface trap were examined by the variable-reverse bias boltage method.