Proceedings of the IEEK Conference (대한전자공학회:학술대회논문집)

The Institute of Electronics and Information Engineers (대한전자공학회)
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Characteristic of InP/InGaAs HBT for Long Wavelength Application

장파장 응용을 위한 InP/InGaAs HBT의 광특성

  • 김강대 (동아대학교 전기전자컴퓨터공학부) ;
  • 허영헌 (동아대학교 전기전자컴퓨터공학부) ;
  • 박재홍 (춘해대학 컴퓨터정보과) ;
  • 김용규 (거창기능대학 메카트로닉스과) ;
  • 문태정 (경남정보대학 디지털엔지니어링학부) ;
  • 황성범 (경남정보대학 디지털엔지니어링학부) ;
  • 송정근 (동아대학교 전기전자컴퓨터공학부)
  • Published : 2003.07.01
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Abstract

This paper shows the performance as a photodetector of InP/InGaAs HPT operated with a base bias and forntside optical injection through the emitter. InP/InGaAs HPT produced the high optical gain of about 16.2 where HPT is biased at Vc=1V, I$_{B}$=20$\mu$A with an input optical power of 2.4$\mu$W. And we examined that the optical gain of HPTs becomes larger when operating in 3-terminal configuration rather than 2-terminal with the floating base. The optical performance of InP/InGaAs HPT is an attractive to the PIN Photodetector for use in long wavelength optical receivers.s.

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