• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.933-937
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• 2007

A point plate type nonthermal plasma reactor, with a grounded cylindrical third electrode which closely- encompasses the needle point, have been investigated with an emphasis on the role of the third electrode. It was found that the point plate airgap, with the grounded third electrode, had a switching characteristic on its I V characteristics for negative and positive discharges, which is very different from that of a conventional point plate airgap without a third electrode. The corona discharge and ozone generation characteristics of the plasma reactor with the grounded cylindrical third electrode, such as the corona onset voltage. the breakdown voltage. the corona current. and the amount of output ozone, were influenced significantly by the height of the third electrode. and these characteristics can be controlled by adjusting the height of the third electrode.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.10
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• pp.1786-1790
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• 2007

The $(SrCa)TiO_3(SCT)$ thin films are deposited on Pt-coated electrode ($Pt/TiN/SiO_2/Si$) using RF sputtering method at various deposition temperature. The dielectric constant of SCT thin films were increased with the increase of deposition temperature, and changed almost linearly in temperature ranges of $-80{\sim}+90[^{\circ}C]$. Also, SCT thin films was observed the phenomena of dielectric relaxation with the increase of frequency, and the relaxation frequency was observed above 200[kHz]. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of $25{\sim}100[^{\circ}C]$ can be divided into three characteristic regions with different mechanism by the increasing current. The region 1 below 0.8[MV/cm] shows the ohmic conduction. The region 2 can be explained by the Child's law, and the region 3 is dominated by the tunneling effect.

• Journal of Microbiology and Biotechnology
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• v.17 no.6
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• pp.919-927
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• 2007

Antagonistic fluorescent pseudomonads isolated from rhizospheric soil of rice were characterized by 16S rRNA amplicon and fatty acid methyl ester (FAME) analyses. Antagonistic isolates were grown in the fermentation media, and production of antibiotics was confirmed by thin-layer chromatography (TLC) and high-performance liquid chromatography (HPLC). Production of fungal cell-wall-degrading enzymes such as protease, cellulase, pectinase, and chitinase was determined. Dendrogram based on the major and differentiating fatty acids resulted into 5 clusters, viz., cluster I (P. pseudoalcaligenes group), cluster II (P. plecoglossicida group), cluster III (P. fluorescens group), cluster IV (P. aeruginosa group), and cluster V (P. putida group). Characteristic presence of high relative proportions of cyclopropane (17:0 CYCLO w7c) was observed in antagonistic bacteria. Data revealed biodiversity among antagonistic fluorescent pseudomonads associated with the rice rhizosphere. Results presented in this study will help to identify the antagonistic isolates and to determine their mechanisms that mediate antagonism against fungal pathogens of rice.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.338-341
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• 1997

According to reports, it is impossible to make Ohmic Contact with high resistivity p type CdTe or CdZnTe semiconductor theoretically. But it is in need of making Ohmic Contact to fabricate semiconductor radiation detector By electroless deposition method using gold chloride solution, we made Ohmic Contact of Au and p-Cd$_{80}$Zn$_{20}$Te which grown by High Presure Bridgman Method in Aurora Technologies Corporation. We investigated the interface with Rutherford Backscattering Spectrometry and Auger electron spectroscopy. And we evaluated the degree of Ohmic Contact for the Au/CdZnTe interface by the I/V characteristic curve. As a result, we concluded that it showed excellent Ohmic Contact property by tunneling mechanism through the interface.e.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1997.04a
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• pp.202-205
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• 1997

In this paper, we synthesized poly(N-(2-4-imidazolyl) ethyl) maleimide-alt-1-octadecene(IMI-O) polymer that can have function group and improvement of mechnical strength and then confirmed the possibility of molecular device made by LB method. Evaluation of LB film have been processed such as the technique of EA, $^{1}$H-NMR, FT-IR. Also, the deposition status was observed by SEM and Metal/Insulator/Metal(MIM) device was fabricated for investigation of electric properties. In our experimental results. The surface pressure for the solid state was investigated to 20~35[dyne/cm] by the $\pi$ -A isotherm and the limiting area was about 40 ~45 ($\AA$$^2$/molecule). The deposition status of LB films was confirmed by SEM. The conductivity of LB film was found to be 10$^{-14}$ ~10$^{-13}$ [S/cm] by I-V characteristic.

• Proceedings of the KIEE Conference
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• 1998.11c
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• pp.810-812
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• 1998

We studied on the $\pi$-A isotherm of the L-$\alpha$-DLPC was measured at the air-water interface varying with the compressing speed and amounts of solutions for spreading. The molecular arrangement of deposited films were evaluated by measuring the absorption with the UVspectrometer. We made structures of metal(Au)/organic thin films (L-$\alpha$-DLPC)/Metal(Au), the number of accumulated layers are 3. And I-V characteristic of the device examined.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.63.2-63.2
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• 2011

본 연구에서는 질화물 계 발광 다이오드의 광추출효율을 향상시키키 위해서 발광 다이오드의 ITO 투명전극 층 상부에 임프린팅 공정을 이용하여 고굴절률 레진 패턴을 형성하였다. 고굴절률 레진은 단량체 기반의 열경화성 임프린트 레진에 ZnO 나노 파티클을 분산시켜 제작하였고 ZnO 나노 파티클의 함량비를 달리하여 레진의 굴절률을 조절하였다. 고굴절률 레진으로 이루어진 패터닝 층은 열경화 임프린팅 공정으로 제작되었고 300 nm 크기의 dot 또는 hole 격자 패턴 및 moth-eye 형상의 저반사 나노 패턴 등으로 형성되었다. 발광 다이오드에 형성된 패터닝 층의 굴절률, 구조에 따른 광추출효율 향상 정도를 분석하기 위하여 electroluminescence 측정을 하였으며 I-V characteristics를 통해서 임프린팅 공정에 의하여 발광 다이오드 소자의 전기적 특성이 저하되지 않았음을 확인하였다.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.29A no.10
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• pp.29-34
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• 1992

JFET's with gate lengths ranging from 1$\mu$m to 8.3$\mu$m are successfully fabricated on InP substrate where the long haul (1.3$\mu$m~8.3$\mu$m) OEIC's(OptoElectronic Integrated Circuits) have been made. The pn junction of InP JFET's is made by co-implantation and RTA process. JFET's have etched-mesa-gate structure and the maximum gm larger than 90mS/mm was measured and this is the highest record in JFET's of such structure without S/D n$^{+}$ ion implantation. To maintain maximum g$_m$ should be well controlled the overetch of n-layer which inevitably occurs during etching off the unused p-layer. The I-V characteristic is checked during p-layer etch, for this purpose. A dc voltage gain of 11 is obtained from a preamplifier circuit thus fabricated.

• Journal of the Korean Ceramic Society
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• v.31 no.11
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• pp.1396-1400
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• 1994

Electrical properties in the ZnO-Bi2O3-CoO-Zn7Sb2O12 system were investigated with Zn7Sb2O12 content (0.1~2 mol%). The increase of the Zn7Sb2O12 content inhibited the grain growth of ZnO, which showed a narrow grain size distribution of ZnO. The breakdown voltage (Vb) increased markedly with 1 mol% Zn7Sb2O12 addition due to the grain growth control behaviour of the Zn7Sb2O12 . The nonlinear I-V characteristic was significantly influenced by the Zn7Sb2O12 content (or Bi2O3/Zn7Sb2O12 ratio). Addition of 0.5 mol% Zn7Sb2O12 showed the highest nonlinear coefficient ($\alpha$) of 43. The leakage current in prebreakdown region was decreased with increasing Zn7Sb2O12 content.