• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.45-49
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• 2003

본 논문에서는 gate 산화막을 위한 Hf oxide 박막을 $Hf(dmae)_4$ (dmae=dimethylaminoethoxide) 전구체로 Direct Liquid Injection Metal Organic Chemical Vapor Deposition (DLI-MOCVD)방법을 이용하여 p-type Si(100) 기판 위에 증착하였다. 이 전구체를 이용하여 $150^{\circ}C$의 낮은 증착 온도에서도 낮은 carbon 농도와 roughness를 가지는 양질의 박막을 증착할 수 있었다. 증착된 박막은 비정질 구조를 나타내었지만 annealing 온도를 증가시킴에 따라서 결정성(monoclinic phase)을 나타내었다. $500{\AA}$으로 증착한 박막을 C-V 와 I-V curve를 통하여 전기적 특성을 평가하였다. 열처리 온도가 증가함에 따라 유효유전상수(k)는 증가하지만 열처리 온도가 $900^{\circ}C$ 이상이 되면 계면층의 형성에 의해 유효유전상수는 감소하게 되고 이에 따라 누설 전류도 감소하게 된다. 산소분위기 $800^{\circ}C$에서 annealing한 $HfO_2$ 박막의 유전상수는 20.1이고, 누설 전류 밀도는 SV에서 $2.2\times10^{-6}A/\textrm{cm}^2$ 로 좋은 전기적 특성을 가진다.

• 약학회지
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• 제27권2호
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• pp.117-124
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• 1983

For development of $EMIT-T_{3}$ assay, the conjugation of 3, 5, 3'-triiodothyroformic acid NHS ester to G6PDH was attempted in various reaction conditions. Up to now, the best conjugation condition was the ratio of $T_{3}$-NHS:G6PDH=100 in 25% carbitol-Tris buffer at pH 9, $0^{\circ}C$ during overnight. The obtained $T_{3}$-G6PDH conjugates usually had 20% residual enzyme activity which was inhibited by 40-70% with various $anti-T_{3}$ antibodies. Utilizing the conjugate I and an antibody (S2633G), a useful standard curve for $T_{3}$ assay was obtained in the range of 0 to 5ng/ml with 499 EMIT units of separation.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1997년도 추계학술대회 논문집
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• pp.397-400
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• 1997

This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

• Journal of Pharmaceutical Investigation
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• 제23권1호
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• pp.27-32
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• 1993

Pharmacokinetic drug interaction between phenytoin and diltiazem was investigated following i.v. administration concomitantly to rabbits. Diltiazem was coadministered at doses of 1, 2 and 3 mg/kg, respectively, with phenytoin (5 mg/kg) to rabbits. Plasma concentration and AUC of phenytoin were increased significantly, but volume of distribution and total body clearance were decreased significantly (p<0.05) at doses of 2 mg and 3 mg/kg of diltiazem. From the results of this experiment, it is desirable that dosage regimen of phenytoin should be adjusted and that therapeutic drug monitoring should be practiced for reduction of side or toxic effect when phenytoin should be administered with diltiazem in clinical practice.

• Bulletin of the Korean Chemical Society
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• 제7권1호
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• pp.36-38
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• 1986

The Ferricyanide-sensing electrodes were prepared with $Ag_2S\;and\;Ag_3Fe(CN)_6$ (mole ratio 3:1-7:1). The 5:1 $(Ag_2S:Ag_3Fe(CN)_6)$ composition is superior to others in terms of potentiometric response, rapidity of response and reproducibility. Testing was done over the concentration range $10^{-1}M{\sim}10^{-6}M\; Fe(CN)_6^{3-}$ at pH 6.8 with constant ionic strength. The concentration-potential curve was linear and coincided with the Nernstian slope (19.7 mV/decade). Interfering ions were $I^-,\;Br^-,\; SCN^-\;and\;Fe(CN)_6^{4-}$ and the life time of this electrode was 3 weeks. This electrode could be used as the indicator electrode for measuring the ferricyanide and ferrocyanide.

• 대한수학회지
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• 제56권2호
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• pp.387-419
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• 2019

A fullness conjecture of Kuznetsov says that if a smooth projective variety X admits a full exceptional collection of line bundles of length l, then any exceptional collection of line bundles of length l is full. In this paper, we show that this conjecture holds for X as the blow-up of ${\mathbb{P}}^3$ at a point, a line, or a twisted cubic curve, i.e., any exceptional collection of line bundles of length 6 on X is full. Moreover, we obtain an explicit classification of full exceptional collections of line bundles on such X.

• 한국지반공학회:학술대회논문집
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• 한국지반공학회 2009년도 춘계 학술발표회
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• pp.368-375
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• 2009

This paper describes field installation and load test results performed for three types of micropiles in the process of developing a new micropiling method. Field tests were performed for two conventional types(i.e., micropile reinforced with steel bar and gravity grouting, micropile reinforced with steel bar and steel casing and gravity grouting) and a proposed type(i.e., micropile reinforced with hollow steel pipe wrapped with geotextile-pack and pressurized grouting). The load test results subjected to axial compression and tension and lateral loading conditions are described in this paper. The micropiles were exposed in the air in order to verify the installation quality and curing condition of grouting material via ground excavation. Axial compression and tension test results indicate that the new micropile type provide at least 40% higher bearing capacity than that of conventional types. Based on the examination of exposed piles, it is induced that the proposed method, packed micropile, provides better interlocking between grouts and surrounding soils and increases higher frictional resistance comparing to conventional types.

• 한국세라믹학회지
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• 제22권3호
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• pp.35-40
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• 1985

The composition of the base glass was determined to be $Na_2O$ 15, $Fe_2O_3$ 35, $B_2O_3$ 0~20, $P_2O_5$ 30~50 by mole percent. The heating temperature for nucleation was determined by means of thermal expansion curve. Crystalline phases were investigated by X-ray diffraction method and I.R Spectra. Electrical conductivities of glass spec-imens were observed in the temperature range 25~20$0^{\circ}C$ The activation energies of these specimens were caculated. The results obtained were as follows : 1) The limit composition of the melts 15mol% $Na_2O$ 35mole% $Fe_2O_5$ 20mole% $B_2O_3$ 30mole% $P_2O_5$ was able to be formed into desired shapes during cooling, . 2) In the measurement of d. c conductivity($\delta$) on the glasses in the system $15Na_2O-35Fe_2O_3$-$B_2O_3$-(50-x) $P_2O_5$ the values decreased by replacing 5 mole% $P_2O_5$ with $B_2O_3$ 3) The d. c conducties of heat treated samples were increased by replacing $P_2O_5$ with $B_2O_3$ 4) $B_2O_3$ contributed to precipitate crystals such as${\gamma}$-$Fe_2O_3$ $Fe_3O_4$ which had the advantage of electronic conduction in heat treated samples. 5) The slope plotted Log($\delta$) versus 1/T in this glass system was linear in the measured temperature range.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.26.1-26.1
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• 2011

We investigated the atomic layer deposition (ALD) process for nitrogen doped ZnO and the application for n-ZnO : N/p-Si (NW) coaxial hetero-junction photodetectors. ALD ZnO:N was deposited using diethylzinc (DEZ) and diluted $NH_4OH$ at $150^{\circ}C$ of substrate temperature. About 100~300 nm diameter and 5 um length of Si nanowires array were prepared using electroless etching technique in 0.108 g of $AgNO_3$ melted 20 ml HF liquid at $75^{\circ}C$. TEM images showed ZnO were deposited on densely packed SiNW structure achieving extraordinary conformality. When UV (360 nm) light was illuminated on n-ZnO:N/p-SiNW, I-V curve showed about three times larger photocurrent generation than film structure at 10 V reverse bias. Especially, at 660 nm wave length, the coaxial structure has 90.8% of external quantum efficiency (EQE) and 0.573 A/W of responsivity.

• 한국전기전자재료학회논문지
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• 제22권5호
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• pp.419-424
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• 2009

ZnO films doped with different contents of indium ($0.1{\sim}10$ at.%) were deposited on Si (111) substrate by Pulsed Laser Deposition (PLD). The structural, electrical and optical properties of the films were investigated using XRD, AFM, Hall and PL measurement. Results showed that un-doped ZnO film had (002) plane as the c-axis orientated growth, whereas indium doped ZnO films exhibited the peak of (002) and the weak (101) plane. In addition, in the indium doped ZnO films, the electron concentration is ten times higher than that of un-doped ZnO film, while the resistivity is ten times lower than that of un-doped ZnO film. The indium doped ZnO films have UV emission about 380 nm and show a red shift with increasing contents of indium. The I-V curve of the fabricated diode show the typical diode characteristics and have the turn on voltage of about 2 V.