• 한국자기학회:학술대회 개요집
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• 한국자기학회 2004년도 동계학술연구발표회 논문개요집
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• pp.200-201
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• 2004

The $H_{EB}$ was investigated for exchange coupling $20\;{\AA}\;Fe/x\;{\AA}\;NiO\;(type-I samples)$, $20\;{\AA}\;Fe/x\;{\AA}$ nonmagnetic layer $(MgO, Ag, Cu)/(500-x{\AA})$ NiO (type-II smaples). In type-I samples, the $H_{EB}$ is long-range coupling when looking from the point of view of the AFM. The $H_{EB}$ consistent with a generalized Meiklejohn-Bean approach. The critical thickness, which $H_{EB}$ is observed, is $130\;{\AA}$. In type-II samples, MgO layer more decouples the thin interfacial NiO from bottom NiO than other nonmagnetic layer. Nd the decoupling of Ag smallest. This means that the Ag layer has strong coupling the thin interfacial NiO with bottom NiO.

• 마이크로전자및패키징학회지
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• 제20권4호
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• pp.69-74
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• 2013

In this paper, the impact of integrating large number of I/O (Input-Output) and Core power Delivery Network (PDN) on a 6 layers Flip-Chip Ball Grid Array (FCBGA) package is investigated. The impact of core induced supply noise on high-speed I/O interfaces, and high-speed I/O interface's supply noise coupling to adjacent high-speed I/O interfaces' jitter impact are studied. Concurrent stress validation software is used to induce SSO noise on each individual I/O interfaces; and at the same time; periodic noise is introduced from Core PDN into the I/O PDN domain. In order to have the maximum coupling impact, a prototype package is designed to merge the I/O and Core PDN as one while impact on jitter on each I/O interfaces are investigated. In order to understand the impact of the Core to I/O and I/O to I/O noise, the on-die noise measurements were measured and results were compared with the original PDN where each I/O and Core PDN are standalone and isolated are used as a benchmark.

• 한국전자파학회논문지
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• 제12권1호
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• pp.77-83
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• 2001

본 논문에서는 I/O Cable을 가진 일반 통신시스템의 전자파 방사 Mechanism을 분석하여, Design 에 있어 중요한 Parameter을 도출하였다. System 의 경우 I/O Cable, Ventilation Hole 기구물의 Shielding 대책 등이 중요한 EMC design issue가 된다. 일반적인 전자제품에 비해 통신 System 은 다양한 통신을 위한 Cable을 가지므로, I/O Cable의 중요성이 크다. 따라서 I/O Cable의 Coupling mechanism을 실험 및 Simulation 방법에 의해 분석하고, Low Emission을 위한 EMC Design Rule을 제시하였다. 본 EMC Design Rule을 기반으로 통신 System의 Design을 실현하여, 제품의 Redesign 및 복잡한 Debug과정이 없이 효과적으로 전자파 양립성 규격을 만족한 예를 제시하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.176.1-176.1
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• 2014

Graphene has attracted an increasing attention due to its extraordinary electronic, mechanical, and thermal properties. Especially, the two dimensional (2D) sheet of graphene with an extremely high surface to volume ratio has a great potential in the preparation of multifunctional nanomaterials, as 2D supports to host metal nanoparticles (NPs). Copper oxide is widely used in various areas as antifouling paint, p-type semiconductor, dry cell batteries, and catalysts. Although the copper oxide(II) has been well known for efficient catalyst in C-N cross-coupling reaction, copper oxide(I) has not been highlighted. In this research, CuO and Cu2O nanoparticles (NPs) dispersed on the surface of grapehene oxide (GO) have been synthesized by impregnation method and their morphological and electronic structures have been systemically investigated using TEM, XRD, and XAFS. We demonstrate that both CuO and Cu2O on graphene presents efficient catalytic performance toward C-N cross coupling reaction. The detailed structural difference between CuO and Cu2O NPs and their effect on catalytic performance are discussed.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 1999년도 High Temperature Superconductivity Vol.IX
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• pp.260-260
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• 1999

We compared c-axis tunneling characteristics of small stacked intrinsic Josephson junctions prepared on the surface of pristine, I-, and HgI$_2$-intercalated Bi$_2Sr_2CaCu_2O_{8+x}$ (Bi2212) single crystals. The R(T) curves are almost metallic in I-Bi2212 specimens, but semiconducting in HgI$_2$-Bi2212 ones.· The transition temperatures were 82.0 K, 73.0 K, and 76.8 K for pristine Bi2212, I-Bi2212, and HgI2-Bi2212 specimens, respectively, consistent with p-T$_c$ phase diagram. Current-voltage (IV) characteristics of both kinds of specimens show multiple quasiparticle branches with well developed gap features, indicating Josephson coupling is established between neighboring CuO$_2$ planes. The critical current I$_c$ of I-Bi2212 is almost the same as of that of pristine crystals, but I$_c$ is much reduced in Hgl$_2$-Bi2212. In spite of expanded interlayer distances, the interlayer coupling is not significantly affected in I-Bi2212due to holes generated by iodine atoms. The coupling in HgI$_2$-Bi2212 is, however, weakened due to inertness of HgI$_2$ molecules and the expansion of interlayer distance. Relation between the superconducting transition temperature T$_c$ and the critical current I$_c$ seems to contradict Anderson's interlayer-pair-tunneling theory but agree with a modified version of it.

• Bulletin of the Korean Chemical Society
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• 제20권4호
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• pp.422-426
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• 1999

The Grignard reactions of bis(chloromethyl)dimethylsilane (1) with trimethylchlorosilane (2) in THF give both the intermolecular C-Si coupling and intramolecular C-C coupling products. At beginning stage, 1 reacts with Mg to give the mono-Grignard reagent ClCH2Me2SiCH2MgCl (1) which undergoes the C-Si coupling reaction to give MC2Si(CH2SiMe3)2 3, or C-C coupling to a mixture of formula Me3SiCH2(SiMe2CH2CH2)nR1 (n = 1, 2, 3, ..; 4a, R1I = H: 4b, R1 = SiMe3). In the reaction, two reaction pathways are involved: a) Ⅰ reacts with 2 to give Me3SiCH2SiMe2CH2Cl 6 which further reacts with Mg to afford a Me2SiCH2Mel-SiCH2MgCl (Ⅱ) or b) I cyclizes intramolecularly to a silacyclopropane intermediate A, which undergoes a ring-opening polymerization by the nucleophilic attack of the intermediates I or Ⅱ, followed by the termination reaction with H2O and 2, to give 4a and 4b, respectively. As the mole ratio of 2/1 increased from 2 to 16 folds, the formation of product 3 increased from 16% to 47% while the formation of polymeric products 4 was reduced from 60% to 40%. The intermolecular C-Si coupling reaction of the pathway a becomes more favorable than the intramolecular C-C coupling reaction of the pathways b at the higher mole ratio of 2/1.

• 한국전기전자재료학회논문지
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• 제25권12호
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• pp.949-954
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• 2012

The K-PCS and W-CDMA dual band dielectric duplexer and bandpass filters have been designed and fabricated. The dual band duplexer consists of the separate monoblock K-PCS and W-CDMA duplexers using common antenna port. The coupling capacitance and I/O impedance matching have been designed to minimize the cross interference between the bands. Isolations of crosspoint between Tx and Rx in K-PCS and W-CDMA dualband were about 47 dB and 100 dB, respectively. On the other hand, isolations of Tx and Rx in K-PCS and W-CDMA were about 66 dB and 65 dB, respectively. The difference between 47 dB and 100 dB originated from the different center frequencies in Tx and Rx of K-PCS and W-CDMA bands. The coupling capacitance of the bandwidth, I/O capacitance of I/O matching and impedance matching, and various capacitances were important role to fabricate the dielectric duplexer and bandpass filters.

• 한국HCI학회:학술대회논문집
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• 한국HCI학회 2006년도 학술대회 1부
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• pp.818-823
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• 2006

본 연구에서는 디지털 콘텐츠와 물리적 미디어가 유기적으로 결합할 수 있는 가능성을 모색하고자, 입출력 일체화 개체인 'I/O 셀(Cell)'과 그 집합체인 '텐저블 게임 콘솔(Tangible Game Console)'을 개발하였다. I/O 셀은 여러 종류의 센서와 액츄에이터가 하나의 물리적 노드 내에 통합되어 있는 개체로, 이 I/O 셀 다수를 집적하면 다양한 크기와 용도의 엔터테인먼트 미디어를 구성하는 것이 가능하다. 그 중 하나로 개발된 텐저블 게임 콘솔은 일종의 센서-액츄에이터 집합체로 셀들 사이의 연계를 통해 다양한 물리적 정보를 인식하고 표현할 수 있다. 텐저블 게임 콘솔은 기존 게임 콘텐츠의 주요한 표현 수단이었던 이미지와 텍스트 정보 대신에 물리적 정보를 통해 게임 콘텐츠를 구성하며, 조작대상과 조작수단이 일체화되어 있고, 또한 음악, 퍼즐, 액션 등 다양한 장르의 게임 콘텐츠가 적용 가능하다는 특징을 가지고 있다. 텐저블 게임 콘솔에서는 불, 바람, 물, 생명체 등의 물리적 현상을 형상/움직임/소리/빛 등을 통해 재현하며, 사용자는 이를 때리기/바람불기/흔들기/기울이기 등의 직접적인 조작을 통해 체험할 수 있다. 또한 물리적인 상호작용 과정이 일정한 게임 규칙을 가지고 구성되어 있어 지속성 있는 놀이 경험을 제공한다. 본 연구에서는 텐저블 게임 콘솔의 콘텐츠로 음악, 액션, 대전게임 등을 개발하였으며, 이 콘텐츠들의 놀이경험을 평가함으로써, 텐저블 게임 콘솔의 발전 가능성을 확인하였다.

• Journal of electromagnetic engineering and science
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• 제4권2호
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• pp.56-62
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• 2004

We present a multi-Gbit/s digital I/O interface based on RF-modulation and capacitive-coupling over an impedance matched transmission line. The RF-interconnect(RFI) can greatly reduce the digital switching noise and eliminate the dc power dissipation over the channel. It also enables reduced signal amplitude(as low as 200 ㎷) with enhanced data rate and affordable circuit overhead. This paper addresses the system advantages and implementation issues of RFI. A prototype on-chip RFI transceiver is implemented in 0.18-${\mu}{\textrm}{m}$ CMOS. It demonstrates a maximum data rate of 2.2 Gbit/s via 10.5-㎓ RF-modulation. The RFI can be very instrumental for future high-speed inter- and intra-ULSI data links.

• Journal of Magnetics
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• 제7권1호
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• pp.14-17
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• 2002

Magnetic multilayers of a ferromagnetic (FM)/insulator (I)/ferromagnetic (FM) structure have been studied to investigate magnetic exchange coupling between two FM layers. As the Mumetal $(Ni_{77}Fe_{14}Mo_{5}Cu_4$ wt%) growth temperature increases, the grain size and the surface roughness increase simultaneously. The smallest coupling field is obtained at $40^\circ{C}$ where the grain size is larger than that of the $20^\circ{C}$ sample. The exchange coupling field increases again at temperatures higher than $40^\circ{C}$ due to increase in the surface roughness of the Mumetal.