• Journal of the Korea Institute of Military Science and Technology
• /
• v.5 no.2
• /
• pp.103-115
• /
• 2002

This paper describes the results on the design and implementation of large capacity cable checking system using I/O buffer method. The I/O buffer module which has feedback loops with input and output buffers is designed with logic gate in the VME board and controlled by MPC860 microprocessor. So this system can check a lot of cable at the same time with less size and less processing time than that of relay matrix method with the A/D converter. The size of the I/O buffer module can be variable according to the number of cable. And any type of cable can be checked even if the pin assignment of cable is changed.

• Proceedings of the IEEK Conference
• /
• 2000.11b
• /
• pp.345-348
• /
• 2000

In this paper, We described the procedures to generate an input-output buffer information specification (IBIS) model in digital IC circuits. We gives the method to describe IBIS standard I/O for the characteristics of I/O buffer and to represent its electrical characteristics. The parameters of I/O structure for I/O buffer modelling are also referred, and an IBIS model for CMOS, TTL IC, ROM and RAM constructed amounts about 216. This IBIS model can be used to the simulation of signal integrity of high speed circuits in a PCB level.

• ETRI Journal
• /
• v.25 no.5
• /
• pp.297-304
• /
• 2003

A multimedia SoC often requires a large internal buffer, because it must store the whole search window to reduce the huge I/O bandwidth of motion estimation. However, the silicon area of the internal buffer increases tremendously as the search range becomes larger. This paper proposes a new method that greatly reduces the internal buffer size of a multimedia SoC while the computational cost, I/O bandwidth, and image quality do not change. In the proposed method, only the overlapped parts of search windows for consecutive macroblocks are stored in the internal buffer. The proposed method reduces the internal buffer. The proposed method reduces the internal buffer size to 1/5.0 and 1/8.8 when the search range is ${\pm}64{\times}{\pm}$64 and ${\pm}128{\times}{\pm}$128, respectively.

• Transactions on Electrical and Electronic Materials
• /
• v.10 no.1
• /
• pp.24-27
• /
• 2009

N-doped ZnO thin films were deposited on n-type Si(100) and homo-buffer layer, and undoped ZnO thin film was also deposited on homo-buffer layer by RF magnetron sputtering method. After deposition, all films were in-situ annealed at $800^{\circ}C$ for 5 minutes in ambient of $O_2$ with pressure of 10Torr. X -ray diffraction shows that the homo-buffer layer is beneficial to the crystalline of N-doped ZnO thin films and all films have preferable c-axis orientation. Atomic force microscopy shows that undoped ZnO thin film grown on homo-buffer layer has an evident improvement of smoothness compared with N-dope ZnO thin films. Hall-effect measurements show that all ZnO films annealed at $800^{\circ}C$ possess p-type conductivities. The undoped ZnO film has the highest carrier concentration of $1.145{\times}10^{17}cm{-3}$. The photoluminescence spectra show the emissions related to FE, DAP and many defects such as $V_{Zn}$, $Zn_O$, $O_i$ and $O_{Zn}$. The p-type defects ($O_i$, $V_{Zn}$, and $O_{Zn}$) are dominant. The undoped ZnO thin film has a better p-type conductivity compared with N-doped ZnO thin film.

• Journal of KIISE:Computing Practices and Letters
• /
• v.10 no.2
• /
• pp.134-145
• /
• 2004

With rapid growth in the amount of data transferred on the Internet, traditional storage systems have reached the limits of their capacity and performance. SAN (Storage Area Network), which connects hosts to disk with the Fibre Channel switches, provides one of the powerful solutions to scale the data storage and servers. In this environment, the maintenance of data consistency among hosts is an important issue because multiple hosts share the files on disks attached to the SAN. To preserve data consistency, each host can execute the disk I/O whenever disk read and write operations are requested. However, frequent disk I/O requests cause the deterioration of the overall performance of a SAN cluster. In this paper, we introduce a SANtopia global buffer manager to improve the performance of a SAN cluster reducing the number of disk I/Os. We describe the design and algorithms of the SANtopia global buffer manager, which provides a buffer cache sharing mechanism among the hosts in the SAN cluster. Micro-benchmark results to measure the performance of block I/O operations show that the global buffer manager achieves speed-up by the factor of 1.8-12.8 compared with the existing method using disk I/O operations. Also, File system micro-benchmark results show that SANtopia file system with the global buffer manager improves performance by the factor of 1.06 in case of directories and 1.14 in case of files compared with the file system without a global buffer manager.

• Proceedings of the KIEE Conference
• /
• 2004.11a
• /
• pp.183-186
• /
• 2004

The metal-ferroelectric-insulator-semiconductor(MFIS) capacitors were fabricated using a metalorganic decomposition (MOD)method. The $CeO_2$ thin films were deposited as a buffer layer on Si substrate and $Bi_{3.25}La_{0.75}Ti_3O_{12}$ (BLT) thin films were used as a ferroelectric layer. The electrical and structural properties of the MFIS structure were investigated by varying the $CeO_2$ layer thickness. The width of the memory window in the capacitance-voltage (C-V)curves for the MFIS structure decreased with increasing thickness of the $CeO_2$ layer. Auger electron spectroscopy (AES) and transmission electron microscopy (TEM) show no interdiffusion by using the $CeO_2$ film as buffer layer between the BLT film and Si substrate. The experimental results show that the BLT-based MFIS structure is suitable for non-volatile memory field-effect-transistors (FETs) with large memory window.

• The KIPS Transactions:PartA
• /
• v.9A no.2
• /
• pp.147-162
• /
• 2002

Multi-processor system with fast I/O devices improves processing performance and reduces the bottleneck by I/O concentration. In the system, the Performance influenced by shared memory used for exchanging data between processors varies with configuration and utilization. This paper suggests a prediction model for buffer and shared memory optimization under interrupt recognition method using mailbox. Ethernet (IEEE 802.3) packets are used as the input of system and the amount of utilized memory is measured for different network bandwidth and burstiness. Some empirical studies show that the amount of buffer and shared memory varies with packet concentration rate as well as I/O bandwidth. And the studies also show the correlation between two memories.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.13 no.2
• /
• pp.114-126
• /
• 2013

In this paper, we present a set of methodologies to model the electromagnetic susceptibility (EMS) testing of I/O buffers for mobile system memory based on the bulk current injection (BCI) method. An efficient equivalent circuit model is developed for the current injection probe, line impedance stabilization network (LISN), printed circuit board (PCB), and package. The simulation results show good correlation with the measurements and thus, the work presented here will enable electromagnetic susceptibility analysis at the integrated circuit (IC) design stage.

• Korean Journal of Soil Science and Fertilizer
• /
• v.1 no.1
• /
• pp.117-123
• /
• 1968

A simplest and best method to find out lime requirement for Korean soils is described. Twenty six top soil samples were collected from various localities and chemical characteristics were dertermined. Three different buffer curve methods were employed as the standard to find out the most reliable test for lime requirement. In addition, the lime requirement test by the Shoemaker's and Woodruff's as well as the O.R.D. kit method were compared with the most reliable buffer curve method. The results may be summarized as follows. 1. The regression equation of the most reliable lime requirement by buffer curve method, y, on percent base saturation of various soils, X, was y=9.69-0.106 X and the negative correlation coefficient r=-0.84 was statistically significant at 5% level. 2. Lime requirement test by the best, buffer curve, method was more well correlated with the sum of exchangeable hydrogen and exchangeable aluminum contents of the soil samples than the exchangeable hydrogen content only. 3. The ordinary buffer curve method for lime requirement is more reasonable than the lime requirement test by the buffer curve prepared after addition of 1 normal potassium chloride or calcium chloride solutions. 4. The lime requirement tests by the most reasonable buffer curve method, X, and by the Woodruff's, the Shoemaker's and O.R.D. kit were compared. The best method for laboratory lime requirement test was the Shoemaker's method and the O.R.D. kit method also was good enough for the field test and these two method are recommended as the unified method of lime requirement test in each soil testing laboratories throughout Korea.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.201-206
• /
• 2000

Effects of the post-annealing temperature of CeO$_2$ buffer layers on the properties of YBCO films on CeO$_2$-buffered sapphire were investigated. 45 nm-thick CeO$_2$ buffer layer was prepared in-situ on r-cut sapphire using an on-axis rf magnetron sputtering method, which was later post-annealed at temperatures between 950$^{\circ}$C and 1100$^{\circ}$C in an oxygen-flowing environment. YBCO films were prepared on CeO$_2$-buffered sapphire (CbS), for which the surface morphology, crystal structures and electrical properties of the YBCO films were studied. YBCO films on post-annealed CbS appeared to have better properties than those on as-grown CbS with regard to the morphological, structural and electrical properties when the YBCO films were prepared on CeO$_2$ buffer layer post-annealed at temperatures of 1000 - 1050$^{\circ}$C. A TE$_{011}$ mode rutileloaded cylindrical cavity resonators was fabricated with the YBCO films placed as the endplates, for which the unloaded Q of the resonator was measured. It turned out that the resonator with the endplates prepared from the YBCO films on postannealed CbS at 1000 $^{\circ}$C showed the highest unloaded Q with the value more than 8 ${\times}$ 10$^5$ at 30 K and 8.6 CHz, revealing that the YBCO films on post-annealed CbS at 1000$^{\circ}$C the temperature could be the lowest among the YBCO films on post-annealed CbS.