• Journal of the Korean Magnetics Society
• /
• v.4 no.2
• /
• pp.150-153
• /
• 1994

Magnetic field annealing method has been used to obtain proper hysteresis loop shapes which are useful to a device using amorphous ribbon. In this study, two pairs of Helmhotz coils were used to apply longitudinal and transverse magnetic field during annealing. For the measurement of coercive field strength noise which depends on magnetic field annealing, Co-based amorphous alloy ribbon $VITROVAC^{\circledR}$ 6030 was used. For the sample which was annealed under dc transverse and dc longitudinal magnetic field, coercive field strength noise was nearly independent of magnetizing frequency ranging from 1 to 100 kHz, but dc transverse and ac longitudinal magnetic fields annealed samples show that the coercive field strength noise decreased in power of magnetizing frequency. When magnetic domain nucleation occurred, the coercive field strength noise increased remarkably and decreased in power of magnetizing frequency.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.17 no.1
• /
• pp.29-34
• /
• 2017

A CMOS-based temperature sensor is proposed for low-voltage and low-power on-chip thermal monitoring applications. The proposed temperature sensor converts a proportional to absolute temperature (PTAT) current to a PTAT frequency using an integrator and hysteresis comparator. In addition, it operates in the subthreshold region, allowing reduced power consumption. The proposed temperature sensor was fabricated in a standard 90 nm CMOS technology. Measurement results of the proposed temperature sensor show a temperature error of between -0.81 and $+0.94^{\circ}C$ in the temperature range of 0 to $70^{\circ}C$ after one-point calibration at $30^{\circ}C$, with a temperature coefficient of $218Hz/^{\circ}C$. Moreover, the measured energy of the proposed temperature sensor is 36 pJ per conversion, the lowest compared to prior works.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.8C
• /
• pp.801-809
• /
• 2005

This paper proposes a new algorithm for improving the performance of the spatial filter which is the most important part of deinterlacing methods. The conventional edge-based algorithms are not satisfactory in deciding the exact edge direction which controls the performance of the interpolation. The proposed algorithm much increases the performance of the intrafield interpolation by finding exact edge directions based on the binary image. Edge directions are decided using 15 by 3 local window to find not only more accurate but also many low-angle edge directions. The proposed interpolation method upgrades the visual quality of the image by alleviating the misleading edge directions. Simulation results for various images show that the proposed method provides better performance than the existing methods do.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.7
• /
• pp.594-599
• /
• 2005

In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.214-214
• /
• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• Journal of the Korean Society for Heat Treatment
• /
• v.9 no.2
• /
• pp.103-111
• /
• 1996

In this paper, we studied on both electrochemical polarization behaviors and pitting characteristics of ultra high strength Al-Cu-Li-Mg-Ag-Zr alloys(named C1 and C2) and 2090 alloy according to their treatments in the deaerated 3.5% NaCl, using by the potentiodynamic and the potentiostatic method, SEM micrograph and surface roughness including depth of pitting attack. With the cyclic polarization curves, the hysteresis of the C1 and C2 alloys appeared more remarkably than that of the 2090 alloy, because of precipitation microstructural difference between C1, C2 alloys and 2090 alloy. In the pitting experiments, the correlations between pitting growth and aging conditions were analyzed with the SEM micrograph and measurement of the pit depth.

• Journal of the Korean Vacuum Society
• /
• v.5 no.1
• /
• pp.62-66
• /
• 1996

$(Ba_{1-x}Sr_xTiO_3$ (BST) thin films have been grown on Pt-coated MgO by metal -organic chemical vapor deposition. X-ray diffraction results showed that BST films were grown on a Pt/MgO substrate with (100) preferred orientation perpendicular to the surface. The lineawr relationship of P-E curve obtained form hysteresis loop measurement indicated that the BST films had a Curie transitions below room temperature . Films deposited at $900^{\circ}C$ exhibited a smooth and dense microstructure, a dielectric constant of 202, and a dissipation facotr of 0.02 at 100kHz. The leakage current density of the BST films is about $2\times10^{-10} \;A/\textrm{cm}^2$$ at an applied electric field of 0.2 MV/cm. The electrical behavior on the current-voltage characteristics is well explained by the bulk-limited Pool-Frenkel emission.

• Journal of the Korean Institute of Telematics and Electronics A
• /
• v.32A no.8
• /
• pp.78-85
• /
• 1995

We fabricated the Pb$_{1-0.28{\alpha}}La_{0.28}TiO_{3}$ (PLT(28)) thin film successfully by using the sol-gel method and characterized it to evaluate its potential for being utilized as the capacitor dielectrics of ULSI DRAMs. In our sol-gel process, the acetates were used as the starting materials. Through the TGA-DTA analysis, we established the excellent fabrication conditions of the sol-gel method for the PLT(28) thin film. We obtained the dense and crack-free PLT(28) thin film of 100% perovskite phase by drying at 350$^{\circ}C$ after each coating and final annealing at 650$^{\circ}C$. Its electrical properties were measured from the planar capacitors fabricated on the Pt/Ti/SiO$_{2}$/Si substrate. By the P-E hysteresis measurement, its paraelectric phase was identified and its dielectric constant and leakage current density were measured as 936 and 1.1${\mu}A/cm^{2}$, respectively. Those electrical values indicate that the PLT(28) thin film is the most successful candidate for the capacitor dielectrics of ULSI DRAMs at the present.

• International Journal of Aeronautical and Space Sciences
• /
• v.6 no.1
• /
• pp.17-26
• /
• 2005

An optical phase tracking technique for an extrinsic Fabry-Perot interferometer (EFPI) is proposed in order to overcome interferometric non-linearity. Basic idea is utilizing strain-rate information, which cannot be easily obtained from an EFPI sensor itself. The proposed phase tracking system consists of a patch-type EFPI sensor and a simple on-line phase tracking logic. The patch-type EFPI sensor comprises an EFPI and a piezoelectric patch. An EFPI sensor itself has non-linear behavior due to the interferometric characteristics, and a piezoelectric material has hysteresis. However, the composed patch-type EFPI sensor system overcomes the problems that can arise when they are used individually. The dynamic characteristics of the proposed phase tracking system were investigated, and then the patch-type EFPI sensor system was applied to the active suppression of flutter, dynamic aeroelastic instability, of a swept-back composite plate structure. The proposed system has effectively reduced the amplitude of the flutter mode, and increased flutter speed.

• Progress in Superconductivity and Cryogenics
• /
• v.17 no.1
• /
• pp.17-20
• /
• 2015

Coated conductor is an important candidate for power cable applications due to its high current density. Even for DC power cable transmission, we must study the transport properties of HTS tapes after slow and fast discharge. In order to evaluate relation of the magnetic field with applied current we developed a scanning magnetic field measurements system by employing a Hall probe. This work presents the measurements of the magnetic fields above a coated conductor by varying applied current pattern. In the work, a transport current of 100 A, less than the critical current, is applied to YBCO coated conductor. We measured the residual magnetic field distributions after cut off the transport current with slow and fast operations. The results show differences of the magnetic field profiles and the corresponding current profiles by an inverse solution from the magnetic field measurement between these two operations because of the hysteresis of coated conductor excited by the transport current.