Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Analysis of PMOS Capacitor with Thermally Robust Molybdenium Gate

열적으로 강인한 Molybdenium 게이트-PMOS Capacitor의 분석

  • 이정민 (한국항공대하교 항공전자공학과) ;
  • 서현상 (한국항공대하교 항공전자공학과) ;
  • 홍신남 (한국항공대하교 항공전자공학과)
  • Published : 2005.07.01
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Abstract

In this paper, we report the properties of Mo metal employed as PMOS gate electrode. Mo on $SiO_2$ was observed to be stable up to $900^{\circ}C$ by analyzing the Interface with XRD. C-V measurement was performed on the fabricated MOS capacitor with Mo Bate on $SiO_2$. The stability of EOT and work-function was verified by comparing the C-V curves measured before and after annealing at 600, 700, 800, and $900^{\circ}C$. C-V hysteresis curve was performed to identify the effect of fired charge. Gate-injection and substrate-injection of carrier were performed to study the characteristics of $Mo-SiO_2$ and $SiO_2-Si$ interface. Sheet resistance of Mo metal gate obtained from 4-point probe was less than $10\;\Omega\Box$ that was much lower than that of polysilicon.

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References

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