• 제목/요약/키워드: Hydrogen deposition

검색결과 566건 처리시간 0.031초

Fabrication of CuO/ZnO Nano-heterostructure by Photochemical Method and Their H2S Gas Sensing Properties

  • Kim, Jae-Hyun;Yong, Ki-Jung
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제41회 하계 정기 학술대회 초록집
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    • pp.359-359
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    • 2011
  • This study reports the H2S gas sensing properties of CuO / ZnO nano-hetero structure bundle and the investigation of gas sensing mechanism. The 1-Dimensional ZnO nano-structure was synthesized by hydrothermal method and CuO / ZnO nano-heterostructures were prepared by photo chemical reaction. Scanning electron microscopy (SEM) and X-ray diffraction (XRD) spectra confirmed a well-crystalline ZnO of hexagonal structure. In order to improve the H2S gas sensing properties, simple type of gas sensor was fabricated with ZnO nano-heterostructures, which were prepared by photo-chemical deposition of CuO on the ZnO nanorods bundle. The furnace type gas sensing system was used to characterize sensing properties with diluted H2S gas (50 ppm) balanced air at various operating temperature up to 500$^{\circ}C$. The H2S gas response of ZnO nanorods bundle sensor increased with increasing temperature, which is thought to be due to chemical reaction of nanorods with gas molecules. Through analysis of X-ray photoelectron spectroscopy (XPS), the sensing mechanism of ZnO nanorods bundle sensor was explained by well-known surface reaction between ZnO surface atoms and hydrogen sulfide. However at high sensing temperature, chemical conversion of ZnO nanorods becomes a dominant sensing mechanism in current system. Photo-chemically fabricated CuO/ZnO heteronanostructures show higher gas response and higher current level than ZnO nanorods bundle. The gas sensing mechanism of the heteronanostructure can be explained by the chemical conversion of sensing material through the reaction with H2S gas.

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유연기판을 이용한 고효율 나노결정질 실리콘 박막 태양전지 제조 (Fabrication of Highly Efficient Nanocrystalline Silicon Thin-Film Solar Cells Using Flexible Substrates)

  • 장은석;김솔지;이지은;안승규;박주형;조준식
    • Current Photovoltaic Research
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    • 제2권3호
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    • pp.103-109
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    • 2014
  • Highly efficient hydrogenated nanocrystalline silicon (nc-Si:H) thin-film solar cells were prepared on flexible stainless steel substrates using plasma-enhanced chemical vapor deposition. To enhance the performance of solar cells, material properties of back reflectors, n-doped seed layers and wide bandgap nc-SiC:H window layers were optimized. The light scattering efficiency of Ag back reflectors was improved by increasing the surface roughness of the films deposited at elevated substrate temperatures. Using the n-doped seed layers with high crystallinity, the initial crystal growth of intrinsic nc-Si:H absorber layers was improved, resulting in the elimination of the defect-dense amorphous regions at the n/i interfaces. The nc-SiC:H window layers with high bandgap over 2.2 eV were deposited under high hydrogen dilution conditions. The vertical current flow of the films was enhanced by the formation of Si nanocrystallites in the amorphous SiC:H matrix. Under optimized conditions, a high conversion efficiency of 9.13% ($V_{oc}=0.52$, $J_{sc}=25.45mA/cm^2$, FF = 0.69) was achieved for the flexible nc-Si:H thin-film solar cells.

The effect of misorientation-angle dependence of p-GaN layers grown on r-plane sapphire substrates

  • 손지수;김재범;서용곤;백광현;김태근;황성민
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.171-171
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    • 2010
  • GaN 기반 Light emitting diodes(LEDs)의 p-type doping layer는 일반적으로 hole을 발생시키는 acceptor로 Mg이 사용하되고 있다. 보통 Mg이 도핑된 p-type GaN은 >$1\;{\Omega}{\cdot}cm$의 저항이 존재하는데 그 이유는 Mg의 열적 이온화를 위한 activation 에너지가 높아서 상온에서 valence band의 hole concentration는 전체 억셉터 농도의 1%가 되지 않기 ��문이다. 본 논문에서는 높은 hole 농도를 얻기 위해서 metalorganic chemical-vapor deposition (MOCVD)를 장비를 사용하여 사파이어 기판의 misorientation-angle에 따른 p-type a-plane(11-20) GaN 특성을 분석하였다. misorientation-angle은 c축 방향으로 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 r-plane(1-102) 사파이어 기판 을 사용하였다. p-type 도핑물질로 bis-magnesium (Cp2Mg) 소스를 사용하였고 성장 과정중 발생하는 hydrogen passivation으로 인한 Mg-H complexes현상을 해결하기위해 conventional furnace annealing (CFA)와 rapid thermal annealing (RTA)를 이용하여 열처리 공정을 진행하였다. 열처리 공정은 Air와 N2 분위기에서 $650^{\circ}C$에서 $900^{\circ}C$ 사이의 다양한 온도에서 수행하였고 Hall 측정을 위해 Ni을 전극 물질로 사용하였다. 상온에서 Accent HL5500IU Hall system을 사용하여 hole concentration, mobility, specific resistance을 측정하였다. 열처리 공정 후 Hall측정 결과 $+0.15^{\circ}$, $-0.15^{\circ}$, $-0.2^{\circ}$, $-0.4^{\circ}$ off된 각 샘플들은 온도, 시간, 분위기에 따라 hole concentration ($7.4{\times}10^{16}cm^{-3}{\sim}6{\times}10^{17}cm^{-3}$), mobility(${\mu}h=\;1.72\;cm^2/V-s\;{\sim}15.2\;cm^2/V-s$), specific resistance(4.971 ohm-cm ~8.924 ohm-cm) 가 변화됨을 확인 할 수 있었다. 또한 광학적 특성을 분석하기 위해 Photoluminescence (PL)을 측정하였다.

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랭뮤어-쉐퍼 기법 이용 생체모사 폴리도파민-산화그래핀 복합체 대면적 적층 기법 연구 (Large Area Deposition of Biomimetic Polydopamine-Graphene Oxide Hybrids using Langmuir-Schaefer Technique)

  • 김태호;송석현;조경일;구자승
    • 접착 및 계면
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    • 제20권3호
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    • pp.110-115
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    • 2019
  • 그래핀으로 박리시키기 위한 한 가지 방법으로 산화그래핀이 많은 관심이 집중되고 있다. 산화그래핀의 산화그룹은 다양한 기능기와 수소결합을 시킬 수 있어 여러 응용분야에 이를 적용시키기 위한 연구가 활발히 진행되고 있다. 하지만 산화그래핀 자체만으로는 실질적으로 응용에 요구되어지는 기계적 물성을 만족시킬 수 없다. 따라서 본 연구에서는 홍합 단백질을 생체모사한 폴리도파민을 이용하여 산화그래핀과 결합시키고 액체-기체 계면에서 대면적의 복합체막을 형성 시켰다. 또한 폴리도파민-산화그래핀 복합체 박막의 모폴로지 구조도 제어하여 나노 링클 구조를 가지는 복합체 막을 얻었다. 기계적으로 우수하며 정교한 나노 구조를 형성할 수 있어 차세대 해수담수화 멤브레인 또는 탄소 복합재료에 이용될 수 있을 것으로 기대될 수 있다.

Pt Deposits on Bi-Modified Pt Electrodes of Nanoparticle and Disk: A Contrasting Behavior of Formic Acid Oxidation

  • Lee, Hyein;Kim, Young Jun;Sohn, Youngku;Rhee, Choong Kyun
    • Journal of Electrochemical Science and Technology
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    • 제12권3호
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    • pp.323-329
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    • 2021
  • This work presents a contrasting behavior of formic acid oxidation (FAO) on the Pt and Bi deposits on different Pt substrates. Using irreversible adsorption method, Bi and Pt were sequentially deposited on Pt electrodes of nanoparticle (Pt NP) and disk (Pt disk). The deposited layers of Bi and Pt on the Pt substrates were characterized with X-ray photoelectron spectroscopy, transmission microscopy and scanning tunneling microscopy. The electrochemical behaviors and FAO enhancements of Pt NP and Pt disk with deposited Bi only (i.e., Bi/Pt NP and Bi/Pt disk), were similar to each other. However, additional deposition of Pt on Bi/Pt NP and Bi/Pt disk (i.e., Pt/Bi/Pt NP and Pt/Bi/Pt disk) changed the electrochemical behavior and FAO activity in different ways depending on the shapes of the Pt substrates. With Pt/Bi/Pt NP, the hydrogen adsorption was suppressed and the surface oxidation of Pt was enhanced; while with Pt/Bi/Pt disk, the opposite behavior was observed. This difference was interpreted as a stronger interaction between the deposited Bi and Pt on Pt NP than that on Pt disk. The FAO performance on Pt/Bi/Pt NP is much better than that on Pt/Bi/Pt disk, most likely due to the difference in the interaction between the deposited Pt and Bi depending on the shapes of Pt substrates. In designing FAO electrochemical catalysts using Pt and Bi, the shape of a Pt substrate was concluded to be critically considered.

리튬이차전지 양극 분말 소재 위 탄소나노튜브의 직접 성장 거동 고찰 (Investigation of direct growth behavior of carbon nanotubes on cathode powder materials in lithium-ion batteries)

  • 한현호;이종환;정구환
    • 한국표면공학회지
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    • 제57권1호
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    • pp.22-30
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    • 2024
  • This study reports a direct growth of carbon nanotubes (CNTs) on the surface of LiCoO2 (LCO) powders to apply as highly efficient cathode materials in lithium-ion batteries (LIB). The CNT synthesis was performed using a thermal chemical vapor deposition apparatus with temperatures from 575 to 625 ℃. Ferritin molecules as growth catalyst of CNTs were mixed in deionized (DI) water with various concentrations from 0.05 to 1.0 mg/mL. Then, the LCO powders was dissolved in the ferritin solution at a ratio of 1g/mL. To obtain catalytic iron nanoparticles on the LCO surface, the LCO-ferritin suspension was dropped in silicon dioxide substrates and calcined under air at 550℃. Subsequently, the direct growth of CNTs on LCO powders was performed using a mixture of acetylene (10 sccm) and hydrogen (100 sccm) for 10 min. The growth behavior was characterized by scanning and transmission electron microscopy, Raman scattering spectroscopy, X-ray diffraction, and thermogravimetric analysis. The optimized condition yielding high structural quality and amount of CNTs was 600 ℃ and 0.5 mg/mL. The obtained materials will be developed as cathode materials in LIB.

Highly Doped Nano-crystal Embedded Polymorphous Silicon Thin Film Deposited by Using Neutral Beam Assisted CVD at Room Temperature

  • 장진녕;이동혁;소현욱;홍문표
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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    • pp.154-155
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    • 2012
  • The promise of nano-crystalites (nc) as a technological material, for applications including display backplane, and solar cells, may ultimately depend on tailoring their behavior through doping and crystallinity. Impurities can strongly modify electronic and optical properties of bulk and nc semiconductors. Highly doped dopant also effect structural properties (both grain size, crystal fraction) of nc-Si thin film. As discussed in several literatures, P atoms or radicals have the tendency to reside on the surface of nc. The P-radical segregation on the nano-grain surfaces that called self-purification may reduce the possibility of new nucleation because of the five-coordination of P. In addition, the P doping levels of ${\sim}2{\times}10^{21}\;at/cm^3$ is the solubility limitation of P in Si; the solubility of nc thin film should be smaller. Therefore, the non-activated P tends to segregate on the grain boundaries and the surface of nc. These mechanisms could prevent new nucleation on the existing grain surface. Therefore, most researches shown that highly doped nc-thin film by using conventional PECVD deposition system tended to have low crystallinity, where the formation energy of nucleation should be higher than the nc surface in the intrinsic materials. If the deposition technology that can make highly doped and simultaneously highly crystallized nc at low temperature, it can lead processes of next generation flexible devices. Recently, we are developing a novel CVD technology with a neutral particle beam (NPB) source, named as neutral beam assisted CVD (NBaCVD), which controls the energy of incident neutral particles in the range of 1~300eV in order to enhance the atomic activation and crystalline of thin films at low temperatures. During the formation of the nc-/pm-Si thin films by the NBaCVD with various process conditions, NPB energy directly controlled by the reflector bias and effectively increased crystal fraction (~80%) by uniformly distributed nc grains with 3~10 nm size. In the case of phosphorous doped Si thin films, the doping efficiency also increased as increasing the reflector bias (i.e. increasing NPB energy). At 330V of reflector bias, activation energy of the doped nc-Si thin film reduced as low as 0.001 eV. This means dopants are fully occupied as substitutional site, even though the Si thin film has nano-sized grain structure. And activated dopant concentration is recorded as high as up to 1020 #/$cm^3$ at very low process temperature (< $80^{\circ}C$) process without any post annealing. Theoretical solubility for the higher dopant concentration in Si thin film for order of 1020 #/$cm^3$ can be done only high temperature process or post annealing over $650^{\circ}C$. In general, as decreasing the grain size, the dopant binding energy increases as ratio of 1 of diameter of grain and the dopant hardly be activated. The highly doped nc-Si thin film by low-temperature NBaCVD process had smaller average grain size under 10 nm (measured by GIWAXS, GISAXS and TEM analysis), but achieved very higher activation of phosphorous dopant; NB energy sufficiently transports its energy to doping and crystallization even though without supplying additional thermal energy. TEM image shows that incubation layer does not formed between nc-Si film and SiO2 under later and highly crystallized nc-Si film is constructed with uniformly distributed nano-grains in polymorphous tissues. The nucleation should be start at the first layer on the SiO2 later, but it hardly growth to be cone-shaped micro-size grains. The nc-grain evenly embedded pm-Si thin film can be formatted by competition of the nucleation and the crystal growing, which depend on the NPB energies. In the evaluation of the light soaking degradation of photoconductivity, while conventional intrinsic and n-type doped a-Si thin films appeared typical degradation of photoconductivity, all of the nc-Si thin films processed by the NBaCVD show only a few % of degradation of it. From FTIR and RAMAN spectra, the energetic hydrogen NB atoms passivate nano-grain boundaries during the NBaCVD process because of the high diffusivity and chemical potential of hydrogen atoms.

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옥천대(沃川帶) 우라늄광층(鑛層)의 구조규제(構造規制) 및 지구화학적(地球化學的) 특성연구(特性硏究) (Lithologic and Structural Controls and Geochemistry of Uranium Deposition in the Ogcheon Black-Slate Formation)

  • 이대성;윤석규;이종혁;김정택
    • 자원환경지질
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    • 제19권spc호
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    • pp.19-41
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    • 1986
  • Structural, radioactive, petrological, petrochemical, mineralogical and stable isotopic study as well as the review of previous studies of the uranium-bearing slates in the Ogcheon sequence were carried out to examine the lithological and structural controls, and geochemical environment in the uranium deposition in the sequence. And the study was extended to the coal-bearing formation (Jangseong Series-Permian) to compare the geochemical and sedimentologic aspects of uranium chemistry between Ogcheon and Hambaegsan areas. The results obtained are as follows: 1. The uranium mineralization occurs in the carbonaceous black slates of the middle to lower Guryongsan formation and its equivalents in the Ogcheon sequence. In general, two or three uranium-bearing carbonaceous beds are found with about 1 to 1.5km stratigraphic interval and they extend from Chungju to Jinsan for 90km in distance, with intermittent igneous intrusions and structural Jisturbances. Average thickness of the beds ranges from 20 to 1,500m. 2. These carbonaceous slate beds were folded by a strong $F_1$-fold and were refolded by subsequent $F_1$-fold, nearly co-axial with the $F_1$, resulting in a repeated occurrence of similar slate. The carbonaceous beds were swelled in hing zones and were shrinked or thined out in limb by the these foldings. Minor faulting and brecciation of the carbonaceous beds were followed causing metamorphism of these beds and secondary migration and alteration of uranium minerals and their close associations. 3. Uranium-rich zones with high radioactive anomalies are found in Chungju, Deogpyong-Yongyuri, MiwonBoun, Daejeon-Geumsan areas in the range of 500~3,700 cps (corresponds to 0.017~0.087%U). These zones continue along strike of the beds for several tens to a few hundred meters but also discontinue with swelling and pinches at places that should be analogously developed toward underground in their vertical extentions. The drilling surveyings in those area, more than 120 holes, indicate that the depth-frequency to uranium rich bed ranging 40~160 meter is greater. 4. The features that higher radioactive anomalies occur particularly from the carbonaceous beds among the argillaceous lithologic units, are well demonstrated on the cross sections of the lithology and radioactive values of the major uranium deposits in the Ogcheon zone. However, one anomalous radioactive zone is found in a l:ornfels bed in Samgoe, near Daejeon city. This is interpreted as a thermal metamorphic effect by which original uranium contents in the underlying black slate were migrated into the hornfels bed. 5. Principal minerals of the uranium-bearing black slates are quartz, sericite, biotite and chlorite, and as to chemical composition of the black slates, $Al_2O_3$ contents appear to be much lower than the average values by its clarke suggesting that the Changri basin has rather proximal to its source area. 6. The uranium-bearing carbonaceous beds contain minor amounts of phosphorite minerals, pyrite, pyrrhotite and other sulfides but not contain iron oxides. Vanadium. Molybdenum, Barium, Nickel, Zirconium, Lead, Cromium and fixed Carbon, and some other heavy metals appear to be positive by correlative with uranium in their concentrations, suggesting a possibility of their genetic relationships. The estimated pH and Eh of the slate suggests an euxenic marine to organic-rich saline water environment during uranium was deposited in the middle part of Ogcheon zone. 7. The Carboniferous shale of Jangseong Series(Sadong Series) of Permian in Hambaegsan area having low radioactivity and in fluvial to beach deposits is entirely different in geochemical property and depositional environment from the middle part of Ogcheon zone, so-called "Pibanryong-Type Ogcheon Zone". 8. Synthesizing various data obtained by several aspects of research on uranium mineralization in the studied sequence, it is concluded that the processes of uranium deposition were incorporated with rich organic precipitation by which soluble uranyl ions, $U{_2}^{+{+}}$ were organochemically complexed and carried down to the pre-Ogcheon sea bottoms formed in transitional environment, from Red Sea type basin to Black Sea type basin. Decomposition of the organic matter under reducing conditions to hydrogen sulfide, which reduced the $UO{_2}^{+2}$ ions to the insoluble uranium dioxide($UO_2$), on the other side the heavy metals are precipitated as sulfides. 9. The EPMA study on the identification of uraninite and others and the genetic interpretation of uranium bearing slates by isotopic values of this work are given separately by Yun, S. in 1984.

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무전해 Co-W-P 합금 도금 층의 미세구조와 자기적 특성 (Micro-Structure and Magnetic Properties of Electroless Co-W-P Alloy Deposits Formed)

  • 윤성렬;한승희;김창욱
    • 한국재료학회지
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    • 제10권1호
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    • pp.97-106
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    • 2000
  • 본 연구에서는 NaH$_2$PO$_2$$H_2O$ (차아인산이수소나트륨)을 환원제로 사용한 무전해 도금법을 이용하여 corning glass 2948 유리기판 위에 Co-W-P 도금층을 제조할 때, pH 및 온도에 따른 석출속도, 합금조성 및 미세구조와 자기적 특성을 고찰하였다. 무전해 Co-P 도금층은 석출전위에 따라 산성에서 석출되지 않고 알칼리성에서만 환원석출반응에 의해 형성되었으며, 석출속도는 pH와 온도가 증가할수록 상승하여 pH 10, 온도 8$0^{\circ}C$일 때 가장 우수하였다. 자기적 특성은 pH 9, 온도 7$0^{\circ}C$일 때 보자력 870Oe, 각형비 0.78로 가장 우수하였으며, 이때, Co-P 도금층의 인(P)의 함량은 2.54%, 두께는 0.216$\mu\textrm{m}$였다. 결정배향은 $\beta$-Co의 fcc는 발견되지 않았고, $\alpha$-Co의 hcp(1010), (0002), (1011) 방향의 결정배향을 확인할 수 있었으며, (1010), (1011) 방향이 우선 배향한 것으로 보아 수평자기벡터를 형성함을 확인할 수 있었다. 무전해 Co-W-P 도금층의 경우는 자기적 특성에서 보자력은 500Oe, 각형비는 0.6 정도의 경향을 보였지만, 결정배향에 있어서는 $\alpha$-Co (0002) 방향으로 우선 배향하여 수직자화벡터를 형성함을 확인할 수 있었으며, 합금조성에 있어 인(P)의 함량은 0.8$\pm$0.2%로 일정하였고, W의 석출량은 $Na_2$WO$_4$의 농도가 증가할수록 증가하여 0.1mol/L일 때 20%이였다. 수소가스를 이용한 환원분위기에서 10$0^{\circ}C$간격으로 1시간씩 40$0^{\circ}C$까지 열처리에 따른 자기적 특성과 미세구조의 변화를 확인하여 본 결과 Co-W-P는 열처리에 따라 표면의 평활도는 향상되었지만, 자기적 특성과 미세구조에는 아무런 변화가 없었다.

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기판 bias 전압이 a-C:H 박막의 특성에 미치는 영향 (Effect of substrate bias voltage on a-C:H film)

  • 유영조;김효근;장홍규;오재석;김근식
    • 한국진공학회지
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    • 제6권4호
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    • pp.348-353
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    • 1997
  • DC saddle-field plasma enhanced chemical vapor deposition(PECVD) 장치를 이용 하여 상온에서 p-type Si(100) 기판위에 hydrogenated amorphous carbon(a-C:H) 박막을 증 착하고 기판의 bias 전압 변화에 따른 박막의 미세구조 변화와 광학적 특성을 연구하였다. 본 실험시 CH4 가스의 유량은 5sccm, 진공조의 $CH_4$ 가스압력은 90mtorr로 일정하게 유지 하였으며 기판의 bias 전압($V_s$)은 0V에서 400V까지 변화시켰다. Rutherford backscattering spectroscopy(RBS)와 elastic recoil detection(ERD) 측정결과 증착된 a-C:H박막의 증착율은 $V_s$=0V에서 $V_s$=400V로 증가함에 따라 45$\AA$/min에서 5$\AA$/min으로 크게 감소하였지만 박막 내의 수소 함유량은 15%에서 52%까지 크게 증가하였다. a-C:H박막내의 수소 함유량이 증 가함에 따라 a-C:H박막은 sp3CH3구조의 polymer like carbon(PLC) 구조로 변환되는 것을 FT-IR로 확인하였으며 Raman 측정 결과 $V_s$=100V와 $V_s$=200V에서 증착한 a-C:H 박막에서 만 C-C결합에 의한 disorder 및 graphite peak를 볼 수 있었다. Photoluminescence(PL) 측 정 결과 $V_s$=200V까지는 기판의 bias 전압이 증가함에 따라 PL세기는 증가하였으나 그 이 상의 인가전압에서는 PL세기가 점점 감소하였다. 특히 $V_s$=200V에서 제작한 a-C:H박막의 PL특성은 상온에서도 눈으로 보일 만큼 우수한 발광 특성을 보였으며, 기판 bias전압이 증 가함에 따라 PL peak 위치가 청색으로 편이하는 경향을 보였다. 이러한 발광 세기의 변화 는 $V_s$=0V부터 $V_s$=200V까지는 기판의 bias전압이 증가함에 따라 상대적으로 박막의 표면에 충돌하는 이온에너지의 감소로 인해 a-C:H박막내에 비발광 중심으로 작용하는 dangling bond가 감소하여 발광의 세기가 증가하였으며 $V_s$=300V이상에서는 박막내의 수소 함유량이 증가함에 따라 dangling bond수는 감소하나 발광 중심으로 작용하는 탄소간의 $\pi$결합을 포 함하는 cluster가 줄어들어 PL세기가 감소한 것으로 생각된다.

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