• Asian-Australasian Journal of Animal Sciences
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• v.17 no.2
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• pp.263-270
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• 2004

A repeated $4{\times}4$ Latin square design was conducted with eight ileal cannulated castrates to examine the effect of source of starch and fiber on nutrient balance and energy metabolism. Pigs were fed on one of the four experimental diets: Control diet (C) mainly based on cooked rice; and diets P, S and W with the inclusion of either raw potato starch, sugar beet pulp or wheat bran supplementation, respectively. With the exception of an increased (p<0.05) energy loss from methane production with diet S observed, no significant differences (p>0.05) in the ratio of metabolizable energy (ME)/digestible energy, the utilization of ME for fat deposition and for protein deposition, energy loss as hydrogen and urinary energy were found between diets. The efficiency of utilization of ME for maintenance was lower (p<0.05) with diets P and S than with diet C. The inclusion of fiber sources (sugar beet pulp or wheat bran) or potato starch reduced the maintenance energy requirement. The fecal energy excretion was increased (p<0.05) with either sugar beet pulp or wheat bran supplementation, while it was unaffected (p>0.05) by addition of potato starch. In comparison with diets C and P, a lowered ileal or fecal digestibility of energy with diets S and W was observed (p<0.05). Feeding sugar beet pulp caused increased (p<0.05) daily production of methane and carbon dioxide and consequently increased energy losses from methane and carbon dioxide production, while it did not influence the daily hydrogen production (p>0.05). An increased (p<0.05) proportion of NSP excreted in feces was seen by the supplementation of wheat bran. Higher NSP intake caused an increased daily amount of NSP in the ileum, but the ileal NSP proportion as a percentage of NSP intake was unaffected by diets. Feeding potato starch resulted in increased daily amount of starch measured in the ileum and the proportion of ileal starch as a percentage of starch intake, while no significant influence on fecal starch was found. Higher (p<0.05) daily amount of fecal starch and the proportion of fecal starch as a percentage of starch intake were found with fiber sources supplementation compared with diets C and P. By increasing the dietary NSP content the fecal amount of starch increased (p<0.01).

• Korean Journal of Materials Research
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• v.25 no.8
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• pp.391-397
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• 2015

NiO catalysts/$Al_2O_3$/FeCrAl alloy foam for hydrogen production was prepared using atomic layer deposition (ALD) and subsequent dip-coating methods. FeCrAl alloy foam and $Al_2O_3$ inter-layer were used as catalyst supports. To improve the dispersion and stability of NiO catalysts, an $Al_2O_3$ inter-layer was introduced and their thickness was systematically controlled to 0, 20, 50 and 80 nm using an ALD technique. The structural, chemical bonding and morphological properties (including dispersion) of the NiO catalysts/$Al_2O_3$/FeCrAl alloy foam were characterized by X-ray diffraction, X-ray photoelectron spectroscopy, field-emission scanning electron microscopy and scanning electron microscopy-energy dispersive spectroscopy. In particular, to evaluate the stability of the NiO catalysts grown on $Al_2O_3$/FeCrAl alloy foam, chronoamperometry tests were performed and then the ingredient amounts of electrolytes were analyzed via inductively coupled plasma spectrometer. We found that the introduction of $Al_2O_3$ inter-layer improved the dispersion and stability of the NiO catalysts on the supports. Thus, when an $Al_2O_3$ inter-layer with a 80 nm thickness was grown between the FeCrAl alloy foam and the NiO catalysts, it indicated improved dispersion and stability of the NiO catalysts compared to the other samples. The performance improvement can be explained by optimum thickness of $Al_2O_3$ inter-layer resulting from the role of a passivation layer.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2009.05a
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• pp.111-112
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• 2009

Diamond-like carbon (DLC) is a convenient term to indicate the compositions of the various forms of amorphous carbon (a-C), tetrahedral amorphous carbon (ta-C), hydrogenated amorphous carbon and tetrahedral amorphous carbon (a-C:H and ta-C:H). The a-C film with disordered graphitic ordering, such as soot, chars, glassy carbon, and evaporated a-C, is shown in the lower left hand corner. If the fraction of sp3 bonding reaches a high degree, such an a-C is denoted as tetrahedral amorphous carbon (ta-C), in order to distinguish it from sp2 a-C [2]. Two hydrocarbon polymers, that is, polyethylene (CH2)n and polyacetylene (CH)n, define the limits of the triangle in the right hand corner beyond which interconnecting C-C networks do not form, and only strait-chain molecules are formed. The DLC films, i.e. a-C, ta-C, a-C:H and ta-C:H, have some extreme properties similar to diamond, such as hardness, elastic modulus and chemical inertness. These films are great advantages for many applications. One of the most important applications of the carbon-based films is the coating for magnetic hard disk recording. The second successful application is wear protective and antireflective films for IR windows. The third application is wear protection of bearings and sliding friction parts. The fourth is precision gages for the automotive industry. Recently, exciting ongoing study [1] tries to deposit a carbon-based protective film on engine parts (e.g. engine cylinders and pistons) taking into account not only low friction and wear, but also self lubricating properties. Reduction of the oil consumption is expected. Currently, for an additional application field, the carbon-based films are extensively studied as excellent candidates for biocompatible films on biomedical implants. The carbon-based films consist of carbon, hydrogen and nitrogen, which are biologically harmless as well as the main elements of human body. Some in vitro and limited in vivo studies on the biological effects of carbon-based films have been studied [$2{\sim}5$].The carbon-based films have great potentials in many fields. However, a few technological issues for carbon-based film are still needed to be studied to improve the applicability. Aisenberg and Chabot [3] firstly prepared an amorphous carbon film on substrates remained at room temperature using a beam of carbon ions produced using argon plasma. Spencer et al. [4] had subsequently developed this field. Many deposition techniques for DLC films have been developed to increase the fraction of sp3 bonding in the films. The a-C films have been prepared by a variety of deposition methods such as ion plating, DC or RF sputtering, RF or DC plasma enhanced chemical vapor deposition (PECVD), electron cyclotron resonance chemical vapor deposition (ECR-CVD), ion implantation, ablation, pulsed laser deposition and cathodic arc deposition, from a variety of carbon target or gaseous sources materials [5]. Sputtering is the most common deposition method for a-C film. Deposited films by these plasma methods, such as plasma enhanced chemical vapor deposition (PECVD) [6], are ranged into the interior of the triangle. Application fields of DLC films investigated from papers. Many papers purposed to apply for tribology due to the carbon-based films of low friction and wear resistance. Figure 1 shows the percentage of DLC research interest for application field. The biggest portion is tribology field. It is occupied 57%. Second, biomedical field hold 14%. Nowadays, biomedical field is took notice in many countries and significantly increased the research papers. DLC films actually applied to many industries in 2005 as shown figure 2. The most applied fields are mold and machinery industries. It took over 50%. The automobile industry is more and more increase application parts. In the near future, automobile industry is expected a big market for DLC coating. Figure 1 Research interests of carbon-based filmsFigure 2 Demand ratio of DLC coating for industry in 2005. In this presentation, I will introduce a trend of carbon-based coating research and applications.

• Journal of the Korean Chemical Society
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• v.34 no.5
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• pp.396-403
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• 1990

We describe how to design and construct a LPCVD (Low Pressure Chemical Vapor Deposition) apparatus which can be applicable to the study of reaction mechanism in general CVD experiments. With this apparatus we have attempted to make diamond like carbon films on the p-type (111) Si wafer from (H$_2$ ＋ CH$_4$) gas mixtures. Two different methods have been tried to get products. (1)The experiment was carried out in the reactor with two different inlet gas tubes. One coated with phosphoric acid was used for supplying microwave discharged hydrogen gas stream, and methane has been passed through the other tube without the microwave discharge. In this method we got only amorphous carbon cluster products. (2) The gas mixture (H$_2$ ＋ CH$_4$) has been passed through the discharge tube with the Si wafer located in and/or near the microwave plasma. In this case diamond-like carbon products could be obtained.

• Journal of the Korean Electrochemical Society
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• v.13 no.4
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• pp.270-276
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• 2010

Nickel-copper foam electrodes with pore gradient micro framework and nano-ramified wall have been prepared by using an electrochemical deposition process. Growth habit of nickel-copper co-deposits was quite different from that of pure nickel deposit. In particular, the ramified structure of the individual particles was getting clear with chloride ion content in the electrolyte. The ratio of nickel to copper in the deposits decreased with the distance away from the substrate and the more chloride ions in the electrolyte led to the more nickel content throughout the deposits. Compositional analysis for the cross section of a ramified branch, together with tactical selective copper etching, proved that the copper content increased with approaching central region of the cross section. Such a composition gradient actually disappeared after heat treatment. It is anticipated that the pore gradient nickel-copper nanostructured foams presented in this work might be a promising option for the high-performance electrode in functional electrochemical devices.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.11
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• pp.20-25
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• 2007

In this paper, It was reported the dielectric constant in organic inorganic hybrid silica material such as SiOC film modeling of bond structure by annealing in organic properties. The organic inorganic hybrid silica material were deposited using bis-trimethylsilymethane (BTMSM, [(CH3)3Si]2CH2) and oxygen gas precursor by a plasma chemical vapor deposition (CVD). The organic inorganic hybrid silica material have three types according to the deposition condition. The dielectric constant of the films were performed MIS(Al/Si-O-C film/p-Si) structure. The C 1s spectra in organin inorganic silica materials with the flow rate ratio of O2/BTMSM=1.5 was organometallic carbon with the peak 282.9 eV by XPS. It means that organometallic carbon component is the cross-link bonding structure with good stability. The dielectric constant was the lowest at annealed films with cross-link bonding structure.

• Korean Journal of Materials Research
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• v.10 no.9
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• pp.648-655
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• 2000

Synthesis of the crystalline film was investigated under the diamond growth condition with altering the addition of the nitrogen from 0% to 95%. With increasing the nitrogen concentration, surface morphology of the film was changed from the diamond film with {100} growth plane to the non-faceted diamond film with nano-scale grains. It also showed that the deposition of the diamond film could be synthesized using only methane and nitrogen gases without hydrogen gas. Separated particles with diamond structure showed an octahedral shaped I the nitrogen ranges between 30% and 80%, and newly formed hexagonal crystals are observed when substrate temperature with diamond structure, however, also identify that the hexagonal crystal was SiCN composite composed of Si, C and N atoms.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.10a
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• pp.27.1-27.1
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• 2011

The recent extensive research of one-dimensional (1D) nanostructures such as nanowires (NWs) and nanotubes (NTs) has been the driving force to fabricate new kinds of nanoscale devices in electronics, optics and bioengineering. We attempt to produce silicon oxide nanowires (SiOxNWs) in a simple way without complicate deposition process, gaseous Si containing precursors, or starting material of $SiO_2$. Nickel (Ni) nanoparticles (NPs) were applied on Si wafer and thermally treated in a furnace. The temperature in the furnace was kept in the ranges between 900 and $1,100^{\circ}C$ and a mixture of nitrogen ($N_2$) and hydrogen ($H_2$) flowed through the furnace. The SiOxNWs had widths ranging from 100 to 200 nm with length extending up to ~10 ${\mu}m$ and their structure was amorphous. Ni NPs were acted as catalysts. Since there were no other Si materials introduced into the furnace, the Si wafer was the only Si sources for the growth of SiOxNWs. When the Si wafer with deposition of Ni NPs was heated, the liquid Ni-Si alloy droplets were formed. The droplets as the nucleation sites induce an initiation of the growth of SiOxNWs and absorb oxygen easily. As the droplets became supersaturated, the SiOxNWs were grown, by the reaction between Si and O and continuously dissolving Si and O onto NPs. Photoluminescence (PL) showed that blue emission spectrum was centered at the wavelength of 450 nm (2.76 eV). The details of growth mechanism of SiOxNWs and the effect of Ni NPs on the formation of SiOxNWs will be presented.

• Journal of the Korean Vacuum Society
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• v.13 no.2
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• pp.79-85
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• 2004

Secondary ion mass spectrometry(SIMS) and glow discharge mass spectrometry(GDMS) were used to determine the impurity concentrations of hydrogen, carbon, and oxygen elements in the Cu and Ta films, and the results of SIMS and GDMS analysis were carefully considered. The Cu and Ta films were deposited on Si (100) substrates at zero substrate bias voltage and a substrate bias voltage of -50 V(Cu films) or -125 V(Ta films) using a non-mass separated ion beam deposition method. As a result of SIMS with Cs+ ion beam, in the case of the Cu and Ta films deposited without the substrate bias voltage, many strong peaks were observed, which is considered to be detected as a the cluster state such as CxHx, OxHx, CxOxHx. All the peaks of SIMS results could be interpreted by the combination of these dominant impurities. Moreover, it was confirmed that the quantitative results of GDMS analysis were accordant to the SIMS results.

• Current Photovoltaic Research
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• v.5 no.2
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• pp.63-67
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• 2017

Aluminum oxide ($Al_2O_3$) film deposited by atomic layer deposition (ALD) is known to supply excellent surface passivation properties on crystalline Si surface. The quality of passivation layer is important for high-efficiency silicon solar cell. double-layer structures have many advantages over single-layer materials. $Al_2O_3/SiN_X$ passivation stacks have been widely adopted for high- efficiency silicon solar cells. The first layer, $Al_2O_3$, passivates the surface, while $SiN_X$ acts as a hydrogen source that saturates silicon dangling bonds during annealing treatment. We explored the properties on passivation film of $Al_2O_3/SiN_X$ stack layer with changing the conditions. For the post annealing temperature, it was found that $500^{\circ}C$ is the most suitable temperature to improvement surface passivation.