• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.430.1-430.1
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• 2016

We present the concept of reducible fugitive material that conformally surrounds core Cu nanowire (NW) to fabricate transparent conducting electrode (TCE). Reducing atmosphere can corrodes/erodes the underlying/surrounding layers and might cause undesirable reactions such impurity doing and contamination, so that hydrogen-/forming gas based annealing is impractical to make device. In this regards, we introduce novel reducible shell conformally surrounding indivial CuNW to provide a protection against the oxidation when exposed to both air and solvent. Uniform copper lactate shell formation is readily achievable by injecting lactic acid to the CuNW dispersion as the acid reacts with the surface oxide/hydroxide or pure copper. Cu lactate shell prevents the core CuNW from the oxidation during the storage and/or film formation, so that the core-shell CuNW maintains without signficant oxidation for long time. Upon simple thermal annealing under vacuum or in nitrogen atmosphere, the Cu lactate shell is easily decomposed to pure Cu, providing an effective way to produce pure CuNW network TCE with typically sheet resistance of $19.8{\Omega}/sq$ and optical transmittance of 85.5% at 550 nm. Our reducible copper lactate core-shell Cu nanowires have the great advantage in fabrication of device such as composite transparent electrodes or solar cells.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.3
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• pp.139-143
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• 2017

N-type crystalline silicon solar cells have high metal impurity tolerance and higher minority carrier lifetime that increases conversion efficiency. However, junction quality between the boron diffused layer and the n-type substrate is more important for increased efficiency. In this paper, the current status and prospects for boron diffused layers in N-type crystalline silicon solar cell applications are described. Boron diffused layer formation methods (thermal diffusion and co-diffusion using $a-SiO_X:B$), boron rich layer (BRL) and boron silicate glass (BSG) reactions, and analysis of the effects to improve junction characteristics are discussed. In-situ oxidation is performed to remove the boron rich layer. The oxidation process after diffusion shows a lower B-O peak than before the Oxidation process was changed into $SiO_2$ phase by FTIR and BRL. The $a-SiO_X:B$ layer is deposited by PECVD using $SiH_4$, $B_2H_6$, $H_2$, $CO_2$ gases in N-type wafer and annealed by thermal tube furnace for performing the P+ layer. MCLT (minority carrier lifetime) is improved by increasing $SiH_4$ and $B_2H_6$. When $a-SiO_X:B$ is removed, the Si-O peak decreases and the B-H peak declines a little, but MCLT is improved by hydrogen passivated inactive boron atoms. In this paper, we focused on the boron emitter for N-type crystalline solar cells.

• 한국신재생에너지학회:학술대회논문집
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• 2009.11a
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• pp.383-383
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• 2009

Silicon is commercially prepared by the reaction of high-purity silica with wood, charcoal, and coal, in an electric arc furnace using carbon electrodes, so called the metallurgical refining process, which produces ~98% pure Si (MG-Si). This can be further purified to solar grade silicon (SoG-Si) by various techniques. The most problematic impurity elements are B and P because of their high segregation coefficients. In this study, we explored the possibility of the using Cat-CVD for Si purification. The existing hot-wire CVD was modified to accommodate the catalyzer and the heating source. Mo boat (1.5 cm ${\times}$ 1 cm ${\times}$ 0.2 cm) was used as a heating source. Commercially available Si was purchased from Nilaco corporation (~99% pure). This powder was kept in the Mo-boat and heated to the purification temperature. In addition to the purification by cat-CVD technique, other methods such as thermal CVD, plasma enhanced CVD, vacuum annealing was also tried. It is found that the impurities are reduced to a great extent when treated with cat-CVD method.

• Advances in nano research
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• v.5 no.4
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• pp.359-372
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• 2017

Metallic copper nanoparticles were synthesised by reduction of copper ions in aqueous solution, and metal-metal bonding by using the nanoparticles was studied. A colloid solution of metallic copper nanoparticles was prepared by mixing an aqueous solution of $CuCl_2$ (0.01 M) and an aqueous solution of hydrazine (reductant) (0.2-1.0 M) in the presence of 0.0005 M of citric acid and 0.005 M of n-hexadecyltrimethylammonium bromide (stabilizers) at reduction temperature of $30-80^{\circ}C$. Copper-particle size varied (in the range of ca. 80-165 nm) with varying hydrazine concentration and reduction temperature. These dependences of particle size are explained by changes in number of metallic-copper-particle nuclei (determined by reduction rate) and changes in collision frequency of particles (based on movement of particles in accordance with temperature). The main component in the nanoparticles is metallic copper, and the metallic-copper particles are polycrystalline. Metallic-copper discs were successfully bonded by annealing at $400^{\circ}C$ and pressure of 1.2 MPa for 5 min in hydrogen gas with the help of the metalli-ccopper particles. Shear strength of the bonded copper discs was then measured. Dependences of shear strength on hydrazine concentration and reduction temperature were explained in terms of progress state of reduction, amount of impurity and particle size. Highest shear strength of 40.0 MPa was recorded for a colloid solution prepared at hydrazine concentration of 0.8 M and reduction temperature of $50^{\circ}C$.

• Korean Journal of Materials Research
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• v.28 no.12
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• pp.738-747
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• 2018

For the aerospace structural application of high-strength 2xxx series aluminum alloys, stress corrosion cracking(SCC) behavior in aggressive environments needs to be well understood. In this study, the SCC sensitivities of 2024-T62, 2124-T851 and 2050-T84 alloys in a 3.5 % NaCl solution are measured using a constant load testing method without polarization and a slow strain rate test(SSRT) method at a strain rate of 10-6 /sec under a cathodic applied potential. When the specimens are exposed to a 3.5 % NaCl solution under a constant load for 10 days, the decrease in tensile ductility is negligible for 2124-T851 and 2050-T84 specimens, proving that T8 heat treatment is beneficial in improving the SCC resistance of 2xxx series aluminum alloys. The specimens are also susceptible to SCC in a hydrogen-generating environment at a slow strain rate of $10^{-6}/sec$ in a 3.5 % NaCl solution under a cathodic applied potential. Regardless of the test method, low impurity 2124-T851 and high Cu/Mg ratio 2050-T84 alloys are found to have relatively lower SCC sensitivity than 2024-T62. The SCC behavior of 2xxx series aluminum alloys in the 3.5 % NaCl solution is discussed based on fractographic and micrographic observations.

• Transactions of the Korean hydrogen and new energy society
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• v.10 no.2
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• pp.119-130
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• 1999

After preparing $Mg_2Ni_{1-x}{^{57}}Fe_x$(x=0.015, 0.03, 0.06, 0.12 and 0.24) alloys, they were studied by $M{\ddot{o}}ssbauer$ resonance. The $M{\ddot{o}}ssbauer$ spectra of x=0.015 and 0.03 alloys exhibit two doublets (doublet 1, 2). That of x=0.06 alloys shows two doublets (doublet 1,2) and one six-line, and those of x=0.12 and 0.24 alloys have only one six-line. The doublet 1 for x=0.015, 0.03 and 0.06 alloys is considered to result from a fraction of Fe in excess showing a superparamagnetic behavior. The doublet 2 is considered to result from the Fe substituted for Ni in the $Mg_2Ni$ phase. The values of isomer shift 0.24 ~ 0.28 mm/s suggest that the iron exist in the state $Fe^{+3}$. The result that the quadrapole splitting of the doublet 2 is not zero shows that the distribution of electrons around the iron is asymmetric. Their values for the doublet 2, 1.20 ~ 1.38 mm/s, approach the value of quadrapole for the oxidation number +3. The six-line showing the magnetic hyperfine interactions results from the iron which has not substituted the nickel in the $Mg_2Ni$ phase. The $M{\ddot{o}}ssbauer$ spectra of the hydrided alloys with x=0.015 and 0.03 show six-line. This suggests that the iron segregates with the hydriding reaction. The analysis results of the $M{\ddot{o}}ssbauer$ spectrum, the variation of magnetization with magnetic field, Auger electron spectroscopy and electron diffraction show the segregation of Ni and the formation of MgO. This is considered to result from the reaction of the $Mg_2Ni$ phase with the oxygen contained in the hydrogen as impurity.

• Journal of the Mineralogical Society of Korea
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• v.27 no.1
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• pp.53-62
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• 2014

In order to remove Fe impurity from low-grade pyrophyllite ore, the effect of certain variables such as particle size, concentration of sulfuric acid, amount of ammonium sulfate, added hydrogen peroxide, and temperature were studied. The euhedral cubic pyrites were observed in the low-grade pyrophyllite ore by reflected light microscopy, and quartz and dickite were identified in the sample by XRD analysis. The results of the Fe removal experiments showed that the best Fe removal parameters were when the particle size was at -325 mesh, the addition of $H_2SO_4$, $(NH_4)_2SO_4$ and $H_2O_2$ was at a 2.0 M, 10.0 g/l, and 3.0 M concentration, respectively, and at a $70^{\circ}C$ leaching temperature. In the dissolution kinetics analysis, the dissolution of Fe from the pyrite surface was a controlled chemical reaction, and the Fe dissolution reaction was proportioned to 0.066/R, $[H_2SO_4]^{1.156}$, $[(NH_4)_2SO_4]^{0.745}$, $[H_2O_2]^{0.428}$.

• Resources Recycling
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• v.10 no.3
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• pp.51-59
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• 2001

Impurities removal from waste carbon black was carried out to produce high-grade carbon black. A large amount of hydrophilic carbon black is produced as a byproduct of the hydrogen production process by flame decomposition of water. Due to its impurities content such as sulphur, iron, ash, etc., it can only be used as low-grade carbon or burnt out. High-grade hydrophilic carbon black is 3~5 times more expensive than oil-based carbon black because of high production cost associated with process complexly and pollutant treatment. Hydrophilic carbon is normally used for conductive materials for batteries, pigment for plastics, electric wire covering, additives for rubber, etc. In these applications, impurity content must be blow 1 fe. In this study, magnetic separation, froth flotation and ultrasonic treatment were employed to remove impurities from the low-grade hydrophilic carbon black. Results showed that the ash, iron and sulphur content of product decreased to less than 0.01 wt.%, 0.01 wt.% and 0.3 wt % respectively and the surface area of product was about 930 $m^2$/g for conductive materials.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.143-144
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• 2010

3-5족 화합물 반도체를 이용한 집광형 삼중 접합 태양전지는 40% 이상의 광변환 효율로 많은 주목을 받고 있다[1]. 삼중 접합 태양전지의 하부 셀은 기계적 강도가 높고 장파장을 흡수할 수 있는 Ge이 사용된다. Ge위에 성장될 III-V족 단결정막으로서 Ge과 격자상수가 일치하는 GaInP나 GaAs가 적합하고, 성장 중 V족 원소의 열확산으로 인해 Ge과 pn접합을 형성하게 된다. 이때 GaInP의 P의 경우 GaAs의 As보다 확산계수가 낮아 태양전지 변환효율향상에 유리한 얇은 접합 형성이 가능하고, 표면 에칭효과가 적기 때문에 GaInP를 단결정막으로 선택하여 p-type Ge기판 위 성장으로 단일접합 Ge구조 제작이 가능하다. 하지만 이종접합 구조 성장으로 인해 발생한 계면사이의 전위나 미세결함들이 결정막내부에 존재하게 되며 이러한 결함들은 광학소자 응용 시 비발광 센터로 작용할 뿐 아니라 소자의 누설전류를 증가시키는 원인으로 작용하여 태양전지 변환효율을 감소시키게 된다. 이에 결함감소를 통해 소자의 전기적 특성을 향상시키고자 수소 열처리나 플라즈마 공정을 통해 수소 원자를 박막내부로 확산시키고, 계면이나 박막 내 결함들과 결합시킴으로서 결함들의 비활성화를 유도하는 연구가 많이 진행되어 왔다 [2][3]. 하지만, 격자불일치를 갖는 GaInP/Ge 구조에 대한 수소 열처리 및 불순물 준위의 거동에 대한 연구는 많이 진행되어 있지 않다. 따라서 본 연구에서는 Ga0.45In0.55P/Ge구조에 수소 열처리 공정을 적용을 통하여 단결정막 내부 및 계면에서의 결함밀도를 제어하고 이를 통해 태양 전지의 변환효율을 향상시키고자 한다. <111> 방향으로 $6^{\circ}C$기울어진 p-type Ge(100) 기판 위에 유기금속화학증착법 (MOCVD)을 통해 Si이 도핑된 200 nm의 n-type GaInP층을 성장하여 Ge과 단일접합 n-p 구조를 제작하였다. 제작된 GaInP/Ge구조를 furnace에서 250도에서 90~150분간 시간변화를 주어 수소열처리 공정을 진행하였다. 저온 photoluminescence를 통해 GaInP층의 광학적 특성 변화를 관찰한 결과, 1.872 eV에서 free-exciton peak과 1.761 eV에서 Si 도펀트 saturation에 의해 발생된 D-A (Donor to Acceptor)천이로 판단되는 peak을 검출할 수 있었다. 수소 열처리 시간이 증가함에 따라 free-exciton peak 세기 증가와 반가폭 감소를 확인하였고, D-A peak이 사라지는 것을 관찰할 수 있었다. 이러한 결과는 수소 열처리에 따른 단결정막 내부의 수소원자들이 얕은 불순물(shallow impurity) 들로 작용하는 도펀트들이나, 깊은 준위결함(deep level defect)으로 작용하는 계면근처의 전위, 미세결함들과의 결합으로 결함 비활성화를 야기해 발광세기와 결정질 향상효과를 보인 것으로 판단된다. 본 발표에서는 상술한 결과를 바탕으로 한 수소 열처리를 통한 박막 및 계면에서의 결함준위의 거동에 대한 광분석 결과가 논의될 것이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.409-409
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• 2014

Recently hexagonal boron nitride (h-BN), III-V compound of boron and nitrogen with strong covalent $sp^2$ bond, is a 2 dimensional insulating material with a large direct band gap up to 6 eV. Its outstanding properties such as strong mechanical strength, high thermal conductivity, and chemical stability have been reported to be similar or superior to graphene. Because of these excellent properties, h-BN can potentially be used for variety of applications such as dielectric layer, deep UV optoelectronic device, and protective transparent substrate. Ultra flat and charge impurity-free surface of h-BN is also an ideal substrate to maintain electrical properties of 2 dimensional materials such as graphene. To synthesize a single or a few layered h-BN, chemical vapor deposition method (CVD) has been widely used by using an ammonia borane as a precursor. Ammonia borane decomposes into hydrogen (gas), monomeric aminoborane (solid), and borazine (gas) that is used for growing h-BN layer. However, very active monomeric aminoborane forms polymeric aminoborane nanoparticles that are white non-crystalline BN nanoparticles of 50~100 nm in diameter. The presence of these BN nanoparticles following the synthesis has been hampering the implementation of h-BN to various applications. Therefore, it is quite important to grow a clean and high quality h-BN layer free of BN particles without having to introduce complicated process steps. We have demonstrated a synthesis of a high quality h-BN monolayer free of BN nanoparticles in wafer-scale size of $7{\times}7cm^2$ by using CVD method incorporating a simple filter system. The measured results have shown that the filter can effectively remove BN nanoparticles by restricting them from reaching to Cu substrate. Layer thickness of about 0.48 nm measured by AFM, a Raman shift of $1,371{\sim}1,372cm^{-1}$ measured by micro Raman spectroscopy along with optical band gap of 6.06 eV estimated from UV-Vis Spectrophotometer confirm the formation of monolayer h-BN. Quantitative XPS analysis for the ratio of boron and nitrogen and CS-corrected HRTEM image of atomic resolution hexagonal lattices indicate a high quality stoichiometric h-BN. The method presented here provides a promising technique for the synthesis of high quality monolayer h-BN free of BN nanoparticles.