• Journal of Korea Water Resources Association
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• v.45 no.5
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• pp.473-480
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• 2012

A two-dimensional depth-integrated hydrodynamic and a depth-averaged passive scalar transport models were developed by using a Compact Finite Volume Method (CFVM) which can assure a higher order accuracy. A typical wave current interaction experimental data set was compared with the computed results by the proposed CFVM model, and resonable agreements were observed from the comparisons. One and two dimensional scalar advection tests were conducted, and very close agreements were observed with very little numerical diffusion. Finally, a turbulent mixing simulation was done in an open channel flow, and a reasonable similarity with LES data was observed.

• JSTS:Journal of Semiconductor Technology and Science
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• v.5 no.2
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• pp.136-147
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• 2005

A theoretical design evaluation based on a hydrodynamic transport simulation of strained Si-SiGe on insulator (SSOI) type nMOSFETs is reported. Although, the net performance improvement is quite limited by the short channel effects, simulation results clearly show that the strained Si-SiGe type nMOSFETs are well-suited for gate lengths down to 20 nm. Simulation results show that the improvement in the transconductance with decreasing gate length is limited by the long-range Coulomb scattering. An influence of lateral and vertical diffusion of shallow dopants in the source/drain extension regions on the device performance (i.e., threshold voltage shift, subthreshold slope, current drivability and transconductance) is quantitatively assessed. An optimum layer thickness ($t_{si}$ of 5 and $t_{sg}$ of 10 nm) with shallow Junction depth (5-10 nm) and controlled lateral diffusion with steep doping gradient is needed to realize the sub-50 nm gate strained Si-SiGe type nMOSFETs.

• JSTS:Journal of Semiconductor Technology and Science
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• v.4 no.1
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• pp.32-40
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• 2004

An extension of the density-gradient model to include the non-local transport effect is presented. The governing equations can be derived from the first three moments of the Wigner distribution function with some approximations. A new nonlinear discretization scheme is applied to the model to reduce the discretization error. We also developed a new boundary condition for the $Si/SiO_2$ interface that includes the electron wavefunction penetration into the oxide to obtain more accurate C-V characteristics. We report the simulation results of a 25-nm metal-oxide-semiconductor field-effect transistor (MOSFET) device.

• KSCE Journal of Civil and Environmental Engineering Research
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• v.30 no.1B
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• pp.33-40
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• 2010

In this study, a two-dimensional hydrodynamic and sediment transport modeling system, HSCTM-2D is employed to simulate the amounts of long-term cohesive sediment deposition in two study bays, and its applicability is evaluated. The modeling system's two modules for hydrodynamic modeling and sediment transport modeling are calibrated, comparing the simulated results and the observed tidal levels, tidal current velocities, and suspended sediment concentrations in the Asan and the Cheonsu Bays, South Korea. It is found that there are good agreements between the simulation results and the observed values. The amounts of long-term cohesive sediment deposition of the two study bays are estimated using the modeling system, taking the suspended sediment concentrations from the open ocean in the tide-dominated environment into account. And, in the case of the Asan Bay, the annual deposition rate reaches 8.1 cm/yr; the Cheonsu Bay, 14.5 cm/yr. Overall, it is concluded that the modeling system is useful to understand the physical process of cohesive suspended sediment transport and deposition in tidal water bodies and to establish the mitigation strategy.

• Proceedings of the Korean Society of Agricultural Engineers Conference
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• 2003.10a
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• pp.515-518
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• 2003

Mathematical models can be used to evaluate the effects of operational alternatives of dam on the downstream aquatic environment. An unsteady, one-dimensional water quality model, CE-QUAL-RIVI was calibrated and validated in Geum river as a sub model for the realtime water management system in the basin. The main usage of the model within the system is to predict the effects of flow regulation by Daecheong Dam on the downstream water quality. The validated model was then used to simulate dynamic water quality changes at several key stations responding to different scenarios of reservoir releases under a hypothetical spill condition. The model showed fairly good performance in the simulation of hydrodynamic and mass transport processes under highly unsteady conditions.

• Journal of the Semiconductor & Display Technology
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• v.12 no.4
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• pp.21-25
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2 V to 4 V in the previous work. This is because the surface effect at the drain side decreases the channel current and the impact ionization in the channel at high drain voltage. In order to increase the breakdown voltage at the same asymmetric gate-recess structure, the InGaAs channel structure is replaced with the InGaAs/InP composite channel in the simulation. The simulation results with InGaAs/InP channel show that the breakdown voltage increases to 6V in the MHEMT as the current decreases. In this paper, the simulation results for the InGaAs/InP channel are shown and analyzed for the InGaAs/InP composite channel in the MHEMT.

• Journal of Applied Biological Chemistry
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• v.43 no.1
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• pp.25-30
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• 2000

The main form of nitrogen fertilizer applied to lowland rice is urea, but little is known about its transport in waterlogged soil. This study was conducted to investigate the transport of urea in waterlogged soil column using WAVE (simulation of the substances Water and Agrochemicals in the soil, crop and Vadose Environment) model which includes the parameters for urea adsorption and hydrolysis, The adsorption distribution coefficient and hydrolysis rate of urea were measured by batch experiments. A transport experiment was carried out with the soil column which was pre-incubated for 45 days under flooded condition. The urea hydrolysis rate (k) was $0.073h^{-1}$. Only 5% of the applied urea remained in soil column at 4 days after urea application. The distribution coefficient ($K_d$) of urea calculated from adsorption isotherm was $0.21Lkg^{-1}$, so it was assumed that urea that urea was a weak-adsorbing material. The maximum concentration of urea was appeared at the convective water front because transport of mobile and weak-adsorbing chemicals, such as urea, is dependent on water convective flow. The urea moved down to 11 cm depth only for 2 days after application, so there is a possibility that unhydrolyzed urea could move out of the root zone and not be available for crops. A simulated urea concentration distribution in waterlogged soil column using WAVE model was slightly different from the measured concentration distribution. This difference resulted from the same hydrolysis rate applied to all soil depths and overestimated hydrodynamic dispersion coefficient. In spite of these limitations, the transport of urea in waterlogged soil column could be predict with WAVE model using urea hydrolysis rate (k) and distribution coefficient ($K_d$) which could be measured easily from a batch experiment.

• Corrosion Science and Technology
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• v.16 no.1
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• pp.23-30
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• 2017

The inhibition effect of thioureido imidazoline inhibitor (TAI) for flow accelerated corrosion (FAC) at different locations for an X65 carbon steel elbow was studied by array electrode and computational fluid dynamics (CFD) simulations. The distribution of the inhibition efficiency measured by electrochemical impedance spectroscopy (EIS) is in good accordance with the distribution of the hydrodynamic parameters at the elbow. The inhibition efficiencies at the outer wall are higher than those at the inner wall meaning that the lower inhibition efficiency is associated with a higher flow velocity, shear stress, and turbulent kinetic energy at the inner wall of the elbow, as well as secondary flow at the elbow rather than the mass transport of inhibitor molecules. Compared to the static condition, the inhibition efficiency of TAI for FAC was relatively low. It is also due to a drastic turbulence flow and high wall shear stress during the FAC test, which prevents the adsorption of inhibitor and/or damages the adsorbed inhibitor film.

• Journal of Korean Society on Water Environment
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• v.27 no.1
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• pp.73-87
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• 2011

An abnormal mono-specific bloom of the cyanobacterium Microcystis aeruginosa had developed at a specific location (transitional zone, monitoring station of Hoenam) in Daecheong Reservoir from middle of July to early August, 2001. The maximum cell counts during the peak bloom reached 1,477,500 cells/mL, which was more than 6~10 times greater than those at other monitoring sites. The hypothesis of this study is that the timing and location of the algal bloom was highly correlated with the local environmental niche that was controled by physical processes such as hydrodynamic mixing and pollutant transport in the reservoir. A three-dimensional, coupled hydrodynamic and ecological model, ELCOM-CAEDYM, was applied to the period of development and subsequent decline of the bloom. The model was calibrated against observed water temperature profiles and water quality variables for different locations, and applied to reproduce the algal bloom event and justify the limiting factor that controled the Microcystis bloom at R3. The simulation results supported the hypothesis that the phosphorus loading induced from a contaminated tributary during several runoff events are closely related to the rapid growth of Microcystis during the period of bloom. Also the physical environments of the reservoir such as a strong thermal stratification and weak wind velocity conditions provided competitive advantage to Microcystis given its light adaptation capability. The results show how the ELCOM-CAEDYM captures the complex interactions between the hydrodynamic and biogeochemical processes, and the local environmental niche that is preferable for cyanobacterial species growth.

• Journal of the Semiconductor & Display Technology
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• v.12 no.3
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• pp.23-27
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• 2013

This paper is for enhancing the breakdown voltage of MHEMTs with an InP-etchstop layer. Gate-recess structures has been simulated and analyzed for the breakdown of the devices with the InP-etchstop layer. The fully removed recess structure in the drain side of MHEMT shows that the breakdown voltage enhances from 2V to almost 4V and that the saturation current at gate voltage of 0V is reduced from 90mA to 60mA at drain voltage of 2V. This is because the electron-captured negatively fixed charges at the drain-side interface between the InAlAs barrier layer and the $Si_3N_4$ passivation layer deplete the InGaAs channel layer more and thus decreases the electron current passing the channel layer. In the paper, the fully-recessed asymmetric gate-recess structure at the drain side shows the on-breakdown voltage enhancement from 2V to 4V in the MHEMTs.