• Korean Journal of Optics and Photonics
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• v.19 no.3
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• pp.219-223
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• 2008

To realize a widely tunable laser diode, a polymer coupled-ring reflector is hybrid- integrated with reflective semiconductor optical amplifier. Even though ring-ring and ring-bus coupling ratios are changed by fabrication errors in waveguide width and height, they remain very close to the single peak condition, ensuring high yield in fabrication. The tuning range is observed to be about 35 nm, maintaining the side mode suppression ratio of about 30 dB.

• Korean Journal of Optics and Photonics
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• v.23 no.5
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• pp.227-232
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• 2012

A large-signal time-domain model is implemented to analyze an FG-LD (Fiber Grating Laser Diode) in which a reflective laser diode is hybrid-integrated with a fiber Bragg grating (FBG). When the length of the externally integrated resonator is 8 mm, in which the effective FBG length of 2.1 mm is included, a static frequency chirp of 0.44 GHz and a dynamic frequency chirp of 6.4 GHz are observed. In addition, it is also observed that the eye of the 10Gbps NRZ signal is well open. The FG-LD is expected to be a cost-effective solution for a 10Gbps-class single wavelength laser covering a span of 50 km range.

• Korean Journal of Optics and Photonics
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• v.20 no.4
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• pp.217-222
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• 2009

In this paper, a low-cost hybrid-integrated tunable laser is realized using a polymer-ring resonator-based add/drop filter reflector and a reflective semiconductor optical amplifier. The add/drop filter reflector, composed of a double-ring resonator with different radii, can have characteristics of selective wavelength reflection and wide wavelength tuning with an aid of vernier effect derived from the radii difference. By hybrid-integrating the reflective semiconductor optical amplifier with the add/drop filter reflector, a tunable laser can be realized through an active alignment method. The hybrid laser exhibited a single mode lasing with side mode suppression ratio of 26 dB and full width half maximum of 0.03 nm. In addition, applying a low current as small as 25 mA onto electrodes over add/drop filter reflector, a wavelength tuning range of 17 nm could be obtained.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• 정보저장시스템학회:학술대회논문집
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• 2005.10a
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• pp.154-159
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• 2005

The next generation of optical storage systems requires higher numerical aperture (NA) objective lenses and shorter wavelength laser in order to improve the unit areal density. A blu-ray technology satisfies a miniaturization and a high capacity which are the requirements of the portable device. In this paper, we analyze the optical performance of hybrid micro lens and do active alignment. The hybrid micro lens is manufactured by using a wafer based fabrication technology. Optical components of hybrid micro lens are evaluated. The measurement of the optical power, the spot size and the wavefront error awe performed to evaluate the hybrid micro lens with NA 0.85. Using the measured data, we estimate if the performance of hybrid micro lens corresponds to the designed performance. After the performance of hybrid micro lens is evaluated, the integrated optical pickup and the hybrid micro lens are assembled by active alignment using UV curing and the optical performance of SFFOP is satisfied with BD specifications.

• Transactions of the Society of Information Storage Systems
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• v.2 no.1
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• pp.79-84
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• 2006

The next generation of optical storage systems requires higher numerical aperture(NA) objective lenses and shorter wavelength laser in order to improve the unit areal density. A blu-ray technology satisfies a miniaturization and a high capacity which are the requirements of the portable device. In this paper, we analyze the optical performance of hybrid micro lens and do active alignment. The hybrid micro lens is manufactured by using a wafer based fabrication technology. Optical components of hybrid micro lens are evaluated. The measurement of the optical power, the spot size and the wavefront error are performed to evaluate the hybrid micro lens with NA 0.85. Using the measured data, we estimate if the performance of hybrid micro lens corresponds to the designed performance. After the performance of hybrid micro lens is evaluated. the integrated optical pickup and the hybrid micro lens are assembled by active alignment using UV curing and the optical performance of SFFOP is satisfied with BD specifications.

• ETRI Journal
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• v.29 no.4
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• pp.452-456
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• 2007

Very compact 4-channel 200-GHz-spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth-order gratings as reflection gratings were formed using a conventional contact-mask photo-lithography process to achieve low-cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ${\pm}0.1$ nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression.

• Electronics and Telecommunications Trends
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• v.35 no.4
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• Proceedings of the Optical Society of Korea Conference
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• 2009.10a
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• pp.388-389
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 2008.10a
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.