• 한국광학회지
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• 제19권3호
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• pp.219-223
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• 2008

광대역 파장 가변 레이저를 구현하기 위하여, 폴리머 결합 링 반사기를 반사형 반도체 광증폭기와 하이브리드 집적하여 광대역 파장 가변 레이저를 구현하였다. 도파로 폭과 높이의 제작 오차로 인하여 방향성 결합기의 결합 비 조합이 설계 값에서 다소 벗어나더라도 단일 피크 조건이 유지되도록 설계함으로써, 제작 수율을 높이도록 하였다. 구현한 파장 가변 레이저는 파장 가변 범위가 35 nm, 부모드 억제 비가 30 dB 이상 보임을 확인하였다.

• 한국광학회지
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• 제20권4호
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• pp.217-222
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• 2009

본 논문에서는 고굴절률차 폴리머 도파로를 이용하여 이중 링 공진기 가감필터(Add/Drop Filter) 반사기를 설계하고 제작하였다. 이 가감필터 반사기를 반사형 반도체 광 증폭기와 하이브리드 집적함으로써 저가형 파장가변 레이저를 제작하고 그 측정결과를 분석하였다. 이중 링 공진기 반사기는 서로 다른 반경을 가진 두 개의 링 공진기로 인하여 선택적인 반사 특성을 가지게 되며, 버니어 효과로 인하여 넓은 파장가변 특성을 가질 수 있다. 반사형 반도체 광 증폭기와 능동 정렬을 통하여 제작된 하이브리드 집적 파장가변 레이저는 26 dB의 부 모드 억제율과 0.03 nm의 선폭을 가지며 단일 모드로 발진하였다. 또한 25 mA의 전류를 이중 링 공진기 가감필터 반사기 상부에 형성된 전극에 인가하여 총 17 nm의 파장가변을 측정하였으며, 파장가변 과정에서 부 모드 억제율은 일정하게 유지됨을 확인하였다.

• 한국광학회지
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• 제23권5호
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• pp.227-232
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• 2012

본 논문에서는 RLD (Reflective Laser Diode)와 FBG (Fiber Bragg Grating)가 하이브리드 집적된 LD (이하 FG-LD)의 정적 및 동적 특성을 해석하기 위하여 대신호 시영역 모델링 방법을 구현하였다. FBG의 유효길이 2.1 mm를 포함한 외부 집적 공진기의 길이가 8 m인 경우에 0.44GHz의 동적 주파수 요동과 6.4 GHz 정도의 동적 주파수 요동 결과를 나타내었다. 또한 10 Gbps NRZ 신호의 아이가 크게 오픈된 상태를 잘 유지함을 확인하였다. FG-LD는 50 km 정도의 길이를 커버하는 10 Gbps 급 단일파장 레이저로서의 효용성이 있을 것으로 기대된다.

• 한국광학회:학술대회논문집
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• 한국광학회 1990년도 제5회 파동 및 레이저 학술발표회 5th Conference on Waves and lasers 논문집 - 한국광학회
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• pp.69-72
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• 1990

For the effective heat transfering in Lser Diodes, Beam-Lead structure were introduced which is applicable to hybrid Optoelectronic Integrated Circuits. A 5-layer planar structure Laser Diode is fabricated and Beam-Lead is made by Au plating. And carrier was made by etching Si substrate and LD was mounted on a carrier. The thermal resistance was measured and we could certain that Beam-Lead structure behaves well as a heat sink.

• 정보저장시스템학회:학술대회논문집
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• 정보저장시스템학회 2005년도 추계학술대회 논문집
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• pp.154-159
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• 2005

The next generation of optical storage systems requires higher numerical aperture (NA) objective lenses and shorter wavelength laser in order to improve the unit areal density. A blu-ray technology satisfies a miniaturization and a high capacity which are the requirements of the portable device. In this paper, we analyze the optical performance of hybrid micro lens and do active alignment. The hybrid micro lens is manufactured by using a wafer based fabrication technology. Optical components of hybrid micro lens are evaluated. The measurement of the optical power, the spot size and the wavefront error awe performed to evaluate the hybrid micro lens with NA 0.85. Using the measured data, we estimate if the performance of hybrid micro lens corresponds to the designed performance. After the performance of hybrid micro lens is evaluated, the integrated optical pickup and the hybrid micro lens are assembled by active alignment using UV curing and the optical performance of SFFOP is satisfied with BD specifications.

• 정보저장시스템학회논문집
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• 제2권1호
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• pp.79-84
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• 2006

The next generation of optical storage systems requires higher numerical aperture(NA) objective lenses and shorter wavelength laser in order to improve the unit areal density. A blu-ray technology satisfies a miniaturization and a high capacity which are the requirements of the portable device. In this paper, we analyze the optical performance of hybrid micro lens and do active alignment. The hybrid micro lens is manufactured by using a wafer based fabrication technology. Optical components of hybrid micro lens are evaluated. The measurement of the optical power, the spot size and the wavefront error are performed to evaluate the hybrid micro lens with NA 0.85. Using the measured data, we estimate if the performance of hybrid micro lens corresponds to the designed performance. After the performance of hybrid micro lens is evaluated. the integrated optical pickup and the hybrid micro lens are assembled by active alignment using UV curing and the optical performance of SFFOP is satisfied with BD specifications.

• ETRI Journal
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• 제29권4호
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• pp.452-456
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• 2007

Very compact 4-channel 200-GHz-spacing external cavity lasers (ECLs) were fabricated by hybrid integration of reflection gratings and superluminescent laser diodes on a planar lightwave circuit chip. The fifth-order gratings as reflection gratings were formed using a conventional contact-mask photo-lithography process to achieve low-cost fabrication. The lasing wavelength of the fabricated ECLs matched the ITU grid with an accuracy of ${\pm}0.1$ nm, and optical powers were more than 0.4 mW at the injection current of 80 mA for all channels. The ECLs showed single mode operations with more than 30 dB side lobe suppression.

• 전자통신동향분석
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• 제35권4호
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• pp.1-10
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• 2020

Since the 1960s, semiconductor packaging technology has developed into electrical joining techniques using lead frames or C4 bumps using tin-lead solder compositions based on traditional reflow processes. To meet the demands of a highly integrated semiconductor device, high reliability, high productivity, and an eco-friendly simplified process, packaging technology was required to use new materials and processes such as lead-free solder, epoxy-based non cleaning interconnection material, and laser based high-speed processes. For next generation semiconductor packaging, the study status of two epoxy-based interconnection materials such as fluxing and hybrid underfills along with a laser-assisted bonding process were introduced for fine pitch semiconductor applications. The fluxing underfill is a solvent-free and non-washing epoxy-based material, which combines the underfill role and fluxing function of the Surface Mounting Technology (SMT) process. The hybrid underfill is a mixture of the above fluxing underfill and lead-free solder powder. For low-heat-resistant substrate applications such as polyethylene terephthalate (PET) and high productivity, laser-assisted bonding technology is introduced with two epoxy-based underfill materials. Fluxing and hybrid underfills as next-generation semiconductor packaging materials along with laser-assisted bonding as a new process are expected to play an active role in next-generation large displays and Augmented Reality (AR) and Virtual Reality (VR) markets.

• 한국광학회:학술대회논문집
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• 한국광학회 2009년도 창립 20주년기념 특별학술발표회
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• pp.388-389
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• 2009

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.205-207
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• 2008

The new process for hybrid silicon thin film transistor (TFT) using DPSS laser has been developed for realizing both low-temperature poly-Si (LTPS) TFT and a-Si:H TFT on the same substrate as a backplane of active matrix liquid crystal display. LTPS TFTs are integrated on the peripheral area of the panel for gate driver integrated circuit and a-Si:H TFTs are used as a switching device for pixel in the active area. The technology has been developed based on the current a-Si:H TFT fabrication process without introducing ion-doping and activation process and the field effect mobility of $4{\sim}5\;cm^2/V{\cdot}s$ and $0.5\;cm^2/V{\cdot}s$ for each TFT was obtained. The low power consumption, high reliability, and low photosensitivity are realized compared with amorphous silicon gate driver circuit and are demonstrated on the 14.1 inch WXGA+ ($1440{\times}900$) LCD Panel.