• Journal of the Korean institute of surface engineering
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• v.35 no.3
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• pp.121-126
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• 2002

WC/C multilayered films were deposited by arc ion plating and magnetron sputter hybrid system with various $C_2$H$_2$ flow rates and bias voltages. The coatings have been characterized with respect to their chemical composition (Glow Discharge Optical Emission Spectroscopy), hardness(Knoop micro-hardness), residual stress(Laser beam bending) and friction coefficient(Ball on disc type wear test). Deposition rate, microhardness and residual stress of WC/C films were observed to increase with increasing the $C_2$$H_2$ flow rates. The highest hardness and residual stress were measured to be 26.5 GPa and 1.1GPa for, WC/C film deposited at substrate bias of -100V. WC/C multilayered film was obtained very low friction coefficient(~0.1).

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.484-485
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• 2003

We report on the optimization of the fabrication process of hybrid sol-gel thin film deposition to produce low cost $1 {\times} 16$ splitters for optical communications. We learn that sol-gel film thickness is dependent upon the spinning speeds and viscosity of the sol-gel solutions and refractive index upon the dopant concentrations of Al and Zr in the sol solutions. We could find the optimized physical conditions to achieve the desired thickness of core and cladding layers. We will further carry out the fabrication and measurements of insertion loss, polarization dependent loss (PDL), etc. for the performance of fabricated splitter devices.

• Proceedings of the IEEK Conference
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• 2003.07b
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• pp.995-998
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• 2003

This paper reports the correlation between dielectric constant and degree of amorphism of the hybrid type Si-O-C thin films. Si-O-C thin films were deposited by high density plasma chemical vapor deposition using bistrimethyl- silylmethane(BTMSM, $H_{9}$C$_3$-Si-C $H_2$-Si-C$_3$ $H_{9}$) and oxygen precursors with various flow rate ratio. As-deposited film and annealed films at 40$0^{\circ}C$ were analyzed by XRD. The Si-O-C thin films were amorphous from XRD patterns. For quantitative analysis, the diffraction pattern of the samples was transformed to radial distribution function by Fourier analysis, and then compared with each other. The degree of amorphism of annealed films was higher than that of as-deposited ones. The dielectric constant varied in accordance with flow rate ratio of precursors. The lowest dielectric constant was obtained from the as-deposited film which has the highest degree of amorphism after annealing.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.8 no.3
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• pp.83-90
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• 2009

This paper presents the design and measurement of a flight model for a Ku-Band Linearized Channel Amplifier. All MMICs, Variable Gain Amplifier (VGA), Variable Voltage Attenuator ('.IVA), Branch line Coupler and Detector for Pre-distorter are fabricated using a Thin-Film Hybrid process. The performance of the fabricated module is verified through the radio frequency circuit simulation tool and electrical function test in space environment.

• Journal of Information Display
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• v.4 no.2
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• pp.25-28
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• 2003

We propose a new optical configuration of a hybrid-aligned nematic liquid crystal cell for reflective displays, which consist of a biaxial film for obtaining wide viewing angle and a half-wave film for achieving high contrast. As a result, we can achieve wide viewing angle of (80( for the horizontal direction and (50( for the vertical direction and uniform reflection spectrum.

• ETRI Journal
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• v.25 no.2
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• pp.73-80
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• 2003

This paper describes an effective method for forming silicon oxide on silica-on-silicon platforms, which results in excellent characteristics for hybrid integration. Among the many processes involved in fabricating silica-on-silicon platforms with planar lightwave circuits (PLCs), the process for forming silicon oxide on an etched silicon substrate is very important for obtaining transparent silica film because it determines the compatibility at the interface between the silicon and the silica film. To investigate the effects of the formation process of the silicon oxide on the characteristics of the silica PLC platform, we compared two silicon oxide formation processes: thermal oxidation and plasma-enhanced chemical vapor deposition (PECVD). Thermal oxidation in fabricating silica platforms generates defects and a cristobalite crystal phase, which results in deterioration of the optical waveguide characteristics. On the other hand, a silica platform with the silicon oxide layer deposited by PECVD has a transparent planar optical waveguide because the crystal growth of the silica has been suppressed. We confirm that the PECVD method is an effective process for silicon oxide formation for a silica platform with excellent characteristics.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.7
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• pp.558-562
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• 2012

As an alternative energy, Dye-sensitized solar cells (DSSCs) have received much attention due to low cost manufacturing procedure and high energy consumption rate. Incorporating scattering centers in the nanocrystalline photoanode or additional scattering layers on the nanocrystalline photoanode is an effective way to enhance the light harvest efficiency of the photoanode and the performance of dye-sensitized solar cells (DSSCs). The light scattering abilities of these scattering layers also depend on the relative sizes and phase of the particles in the layers. A higher surface area is normally obtained using large particle sizes. Therefore, transparent high surface area $TiO_2$ layers and an additional scattering layer consisting of $TiO_2$-Rutile 500 nm paste with relatively larger particles are attractive. In this work, we investigates the applicability of a hybrid $TiO_2$ electrode (or a working electrode with a light scattering layer) in a DSSCs. We fabrication various thin film using $TiO_2$ paste 20 nm and $TiO_2$ paste 500 nm. As a result, the efficiency of the a single structure thin film was 3.35% and the efficiency as scattering layer of hybrid structure thin film was 4.36%, 4.73%.

• Journal of Mechanical Science and Technology
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• v.20 no.8
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• pp.1125-1138
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• 2006

The optimal design of the squeeze film damper (SFD) for rotor system has been studied in previous researches. However, these researches have not been considering jumping or nonlinear phenomena of a rotor system with SFD. This paper represents an optimization technique for linear and nonlinear response of a simple rotor system with SFDs by using a hybrid GA-SA algorithm which combined enhanced genetic algorithm (GA) with simulated annealing algorithm (SA). The damper design parameters are the radius, length and radial clearance of the damper. The objective function is to minimize the transmitted load between SFD and foundation at the operating and critical speeds of the rotor system with SFD which has linear and nonlinear unbalance responses. The numerical results show that the transmitted load of the SFD is greatly reduced in linear and nonlinear responses for the rotor system.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.304-304
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• 2014

Quaternary Ti-Al-Si-N films were deposited on WC-Co substrates by a hybrid deposition system of arc ion plating (AIP) method for Ti-Al source and DC magnetron sputtering technique for Si incorporation. The synthesized Ti-Al-Si-N films were revealed to be composites of solid-solution (Ti,Al)N crystallites and amorphous $Si_3N_4$ by instrumental analyses. The Si addition in Ti-Al-N films affected the refinement and uniform distribution of crystallites by percolation phenomenon of amorphous silicon nitride, similarly to Si effect in TiN film. As the Si content increased up to about 9 at.%, the hardness of Ti-Al-N film steeply increased from 30 GPa to about 50 GPa. The highest microhardness value (~50 GPa) was obtained from the Ti-Al-Si-N film having the Si content of 9 at.%, the microstructure of which was characterized by a nanocomposite of $nc-(Ti,Al)N/a-Si_3N_4$.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2016.11a
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• pp.135-135
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• 2016

Recently flexible electrode materials have attracted attention in various electrical devices. In general, copper(Cu) is widely used electrical conductive material. However, Cu film showed drastically reduction of electrical conductivities under an applied tensile strain of 10%. These poor mechanical characteristics of Cu have difficulty applying in flexible electronic applications. In this study, mechanical flexibilities of Cu thin film were improved by hybridization with carbon nanotubes(CNTs) and laser sintering. First, thin carbon nanotube films were fabricated on a flexible polyethylene terephthalate(PET) substrate by using ultrasonic spray coating of CNT dispersed solution. After then, physically connected CNT-Cu NPs films were formed by utilizing ultrasonic spray coating of Cu nanoparticles dispersed solution on prepared CNT thin films. Finally, CNT-Cu thin films were firmly connected by laser sintering. Therefore, electrical stabilities under mechanical stress of CNT-Cu hybrid thin films were compared with Cu thin films fabricated under same conditions to confirm improvement of mechanical flexibilities by hybridization of CNT and Cu NPs.