• The Plant Pathology Journal
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• 제31권2호
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• pp.108-114
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• 2015

Curvularia lunata is an important maize foliar fungal pathogen that distributes widely in maize growing area in China, and several key pathogenic factors have been isolated. An yeast two-hybrid (Y2H) library is a very useful platform to further unravel novel pathogenic factors in C. lunata. To construct a high-quality full length-expression cDNA library from the C. lunata for application to pathogenesis-related protein-protein interaction screening, total RNA was extracted. The SMART (Switching Mechanism At 5' end of the RNA Transcript) technique was used for cDNA synthesis. Double-stranded cDNA was ligated into the pGADT7-Rec vector with Herring Testes Carrier DNA using homologous recombination method. The ligation mixture was transformed into competent yeast AH109 cells to construct the primary cDNA library. Eventually, a high qualitative library was successfully established according to an evaluation on quality. The transformation efficiency was about $6.39{\times}10^5$ transformants/$3{\mu}g$ pGADT7-Rec. The titer of the primary cDNA library was $2.5{\times}10^8cfu/mL$. The numbers for the cDNA library was $2.46{\times}10^5$. Randomly picked clones show that the recombination rate was 88.24%. Gel electrophoresis results indicated that the fragments ranged from 0.4 kb to 3.0 kb. Melanin synthesis protein Brn1 (1,3,8-hydroxynaphthalene reductase) was used as a "bait" to test the sufficiency of the Y2H library. As a result, a cDNA clone encoding VelB protein that was known to be involved in the regulation of diverse cellular processes, including control of secondary metabolism containing melanin and toxin production in many filamentous fungi was identified. Further study on the exact role of the VelB gene is underway.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.341-341
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• 2012

Recently, oxide semi-conductor materials have been investigated as promising candidates replacing a-Si:H and poly-Si semiconductor because they have some advantages of a room-temperature process, low-cost, high performance and various applications in flexible and transparent electronics. Particularly, amorphous indium-gallium-zinc-oxide (a-IGZO) is an interesting semiconductor material for use in flexible thin film transistor (TFT) fabrication due to the high carrier mobility and low deposition temperatures. In this work, we demonstrated improvement of flexibility in IGZO TFTs, which were fabricated on polyimide (PI) substrate. At first, a thin poly-4vinyl phenol (PVP) layer was spin coated on PI substrate for making a smooth surface up to 0.3 nm, which was required to form high quality active layer. Then, Ni gate electrode of 100 nm was deposited on the bare PVP layer by e-beam evaporator using a shadow mask. The PVP and $Al_2O_3$ layers with different thicknesses were used for organic/inorganic multi gate dielectric, which were formed by spin coater and atomic layer deposition (ALD), respectively, at $200^{\circ}C$. 70 nm IGZO semiconductor layer and 70 nm Al source/drain electrodes were respectively deposited by RF magnetron sputter and thermal evaporator using shadow masks. Then, IGZO layer was annealed on a hotplate at $200^{\circ}C$ for 1 hour. Standard electrical characteristics of transistors were measured by a semiconductor parameter analyzer at room temperature in the dark and performance of devices then was also evaluated under static and dynamic mechanical deformation. The IGZO TFTs incorporating hybrid gate dielectrics showed a high flexibility compared to the device with single structural gate dielectrics. The effects of mechanical deformation on the TFT characteristics will be discussed in detail.

• 한국비블리아학회지
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• 제28권1호
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• pp.25-44
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• 2017

본 연구는 온라인목록에서 효율적으로 RDA 자원유형 디스플레이 방안을 마련하기 위한 것이다. 연구방법으로는 문헌조사 및 RDA 자원유형 테스트 및 선호도 설문조사를 실시하였다. RDA 자원유형 디스플레이를 위한 방안으로 첫째, 기존 자원유형에서 RDA 자원유형으로 데이터 변환이 필요하며, 이를 위해 GMD 및 자체 자원유형코드를 사용하여 변환하되, 리더/06, 007, 008 태그의 정보를 사용하여 변환하는 방안을 제안하였다. 둘째, 한국의 목록규칙 환경에 맞게 RDA 자원유형 용어의 변경과 이를 33X 서브필드 ${\blacktriangledown}9$에 기술하고, 구체적인 자원유형을 표현하기 위해 34X 태그를 디스플레이하는 것을 제안하였다. 셋째, 내용유형, 수록매체유형을 각각 개별적으로 표현하는 방법과 통합하여 디스플레이하는 방식을 제시하였다. 넷째, 이용자 측면에서 자원유형 아이콘 개발을 위해 336, 338 태그의 정보를 바탕으로 리더/07 서지수준의 정보, 008/30-31 녹음자료의 내용, 34X의 정보를 활용할 것을 제안하였다. 본 연구에서 제시한 RDA 자원유형의 디스플레이 방안은 온라인목록에서 RDA 자원유형의 활용가능성을 증대시키고, 이용자에게 자원유형의 이해를 증대시킬 것이다.

• 조명전기설비학회논문지
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• 제25권10호
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• pp.116-124
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• 2011

In this work, the effect of the initial concentration of methanol and ethanol, and the addition of oxygen molecules were discussed to improve the hydrogen generation using non-thermal plasma reactor effectively. In addition, the effect of ozone decomposition catalyst of manganese dioxide and its quantity was investigated. First, hydrogen concentration increased until an initial concentration of about 40,000[ppm] of methanol and thereafter it was saturated. Henceforth, hydrogen concentration decreased with increasing the oxygen percent on the carrier gas of nitrogen about both substances. Related with the effect of catalyst, it increased upto 60[g], but it was not changed largely after that. Consequently, it is confirmed that the hybrid process using plasma process and catalytic surface chemical reaction is a very promising way to increase the efficiency of hydrogen generation as investigated in this work.

• 한국통신학회논문지
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• 제27권5C호
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• pp.530-534
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• 2002

본 논문에서는 발진기의 안정도를 높이기 위해 2차 고조파를 병렬 궤환하는 새로운 구조로 자체 위상고정의 효과를 나타낼 수 있도록 제안하였다. 이 구조는 Hair-Pin 공진 발진기를 사용한 대역통과 여파기, 방향성 결합기, 기본주파수 발진기, 체배기, 그리고 출력전력의 궤환 및 격리를 위한 Wilkinson 전력분배기로 구성되었다. 제안된 발진기는 19.5GHz에서 2.5dBm의 출력을 나타내었으며 기본 주파수 억압 -25 dBc, 위상잡음은 중심주파수 19.5 GHz의 10 kHz offset 지점에서 -76.52 dBc/Hz의 안정된 특성을 얻었다.

• 대한전자공학회논문지
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• 제9권5호
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• pp.27-33
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• 1972

This paper describes the computer-aided design, fabrication and performance of high Q and high gain active filters suitable for microminiaturization in the frequency range of 10-800MHz, based on the negative resistance operation of a transistor. 48 as high as 1000 and a transducer gain as high as 35dB can readily be obtained with a single-transistor amplifier and with an inductance as small as a few nH at higher frequencies and 150 nH at lower frequencies in tile above frequency range. The gain of the proposed active filter can be stoabilized within $\pm$ 1.5 dB over the temperature range -1$0^{\circ}C$ to +5$0^{\circ}C$ and the temperature dependence of the center frequency is tapicalla 50ppm/$^{\circ}C$. An experimental FM receiver utilizing these fitters and operating at a carrier frequency of 92 MH3 was built. The whole circuit was fabricated on eight alumina substrates of by the thick-film hybrid IC technique and the coils are constructed, for miniaturization, in a spiral form of 3 or 4 turns of enamel copper wire with an overall diameter of about 5mm. The test results are also reported in this paper.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.180-180
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• 2010

The design and implementation of high rate deposition process and anti-scratch property of silicon oxide film by PECVD with UHF power were investigated according to the effect of UHF input power with HF bias. New regime of high rate deposition of SiOx films by hybrid plasma process was investigated. The dissociation of OMCTS (C8H24Si4O4) precursor was controlled by plasma processes. SiOx films were deposited on polyethylene terephthalate (PET) and polycarbonate substrate by plasma enhanced chemical vapor deposition (PECVD) using OMCTS with oxygen carrier gas. As the input energy increased, the deposition rate of SiOx film increased. The plasma diagnostics were performed by optical emission spectrometry. The deposition rate was characterized by alpha-step. The mechanical properties of the coatings were examined by nano-indenter and pencil hardness, respectively. The deposition rate of the SiOx films could be controlled by the appropriate intensity of excited neutrals, ionized atoms and UHF input power with HF bias at room temperature, as well as the dissociation of OMCTS.

• 한국전자파학회논문지
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• 제10권6호
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• pp.816-824
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• 1999

본 논문에서는 아날로그 위상비교기률 이용한 위상고정루프를 소개하였으며. 이 방법을 이용하여 20 GHz 대 고정국용 위상고정 국부발진기를 설계 제작하였다. 이 국부발진기는 하이브리드 형태의 18 GHz VCDRO (Voltage Controlled Dielectric Resonator Oscillator)와 완충증폭기 및 아날로그 위상검출기로 이루어져 있다. 일반적인 크리스탈 발전기의 N배 이외의 주파수를 위상고정하기 위하여 VHF PLL로 구성되어 있다. 국부발 진기의 발진전력은 18 GHz에서 약 21 dBm. 고조파억압은 - 34 dBc로 안정된 위상고정 상태를 나타내었다. 이때의 SSB위상잡음은 -75 dBc/Hz@10 kHz로 측정되었다.

• Macromolecular Research
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• 제11권4호
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• pp.250-255
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• 2003

We prepared the photorefractive sol-gel glass based on organic-inorganic hybrid materials containing a charge transporting molecule, second-order nonlinear optical (NLO) chromophore, photosensitizer, and plasticizer. Carbazole and 2-{ 4-[(2-hydroxy-ethyl)-methyl-amino]-benzylidene}-malononitrile were reacted with isocyanato-triethoxy silane and the functionalized silanes were employed to fabricate the efficient photorefractive media induding 2,4,7-trinitrot1uorenone (TNF) to form a charge transfer complex. The prepared sol-gel glass samples showed a large net gain coefficient and high diffraction efficiency at a certain composition. As the concentration of photosensitizer increased, the photorefractive properties were enhanced due to an increment of charge carrier density. Dynamic behavior of the diffraction efficiency was also investigated with the concentration of the photosensitizer.

• 한국통신학회논문지
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• 제30권7C호
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• pp.666-674
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• 2005

이동국에서 받은 되먹임 정보를 바탕으로 하는 차단 적응 전송 기법을 쓸 때, 여러 반송파 부호분할 다중접속/주파수분할 다중방식의(multi carrier code division multiple access/frequency division multiplexing: MC CDMA/FDM 내림 연결 성능을 알아본다. 셀이 하나일 때 직교 서명수열을 쓰면, 제안한 기법은 여러 반송파 직접 수연 부호분할 다중접속(direct sequence/code division multiple access: MC DS/CDMA) 방식과 적응 주파수 뜀/직접 수열(frequency hopping/direct sequence: FH/DS) 방식보다 성능이 더 좋다. 셀이 여럿일 때에도 직교 서명수열이나 확률 서명수열을 쓰면, 제안한 기법이 적응 주파수 뜀/직접 수열 방식보다 성능이 더 좋다.