• 한국방사성폐기물학회:학술대회논문집
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• 한국방사성폐기물학회 2003년도 가을 학술논문집
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• pp.345-350
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• 2003

핫셀내에서 원격작업을 수행할 수 있는 천정 이동 서보 매니퓰레이터 시스템의 시제품을 소개한다. 핫셀(hot cell)에 기본적으로 설치되는 마스터-슬레이브 매니퓰레이터 (master-slave manipulator, MSM)는 팔 길이의 제한 때문에 핫셀내 장치의 유지보수를 효과적으로 수행할 수 없다. 따라서, MSM의 결점인 접근 지역의 제한을 극복하기 위해 천정 이동 서보 매니퓰레이터(Bridge Transported Servo Manipulator, BTSM) 시스템을 개발하고 있다. 개발한 시제품은 부분적으로 와이어 구동방식을 채택한 단일 팔 형태의 힘반영 마스터-슬레이브 서보 매니퓰레이터로 중량 및 규모 대비 취급하중이 기존 마스터-슬레이브 서보 매니퓰레이터 보다 크다. 이는 산업용로봇 및 일반적인 구동장치의 개발에도 유용하다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2002년도 하계학술대회 논문집 C
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• pp.1555-1558
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• 2002

This paper presents deposition and characterizations of microcrystalline silicon(${\mu}c$-Si:H) films prepared by hot wire chemical vapor deposition at substrate temperature below $300^{\circ}C$. The $SiH_4$ Concentration$[F(SiH_4)/F(SiH_4)+F(H_2)]$ is critical parameter for the formation of Si films with microcrystalline phase. At 6% of silane concentration, deposited intrinsic ${\mu}c$-Si:H films shows sufficiently low dark conductivity and high photo sensitivity for solar cell applications. P-type ${\mu}c$-S:H films deposited by Hot-Wire CVD also shows good electrical properties by varying the rate of $B_2H_6$ to $SiH_4$ gas. The solar cells with structure of Al/nip ${\mu}c$-Si:H/TCO/glass was fabricated with sing1e chamber Hot-Wire CVD. About 3% solar efficiency was obtained and applicability of HWCVD for thin film solar cells was proven in this research.

• Current Photovoltaic Research
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• 제1권1호
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• pp.63-68
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• 2013

We investigated the effects of Au eutectic reaction on Si thin film growth by hot wire chemical vapor deposition. Small SiC and Si nano-particles fabricated through a wet etching process were coated and biased at 50 V on micro-textured Si p-n junction solar cells. Au thin film of 10 nm and a Si thin film of 100 nm were then deposited by an electron beam evaporator and hot wire chemical vapor deposition, respectively. The Si and SiC nano-particles and the Au thin film were structurally embedded in Si thin films. However, the Au thin film grew and eventually protruded from the Si thin film in the form of Au silicide nano-balls. This is attributed to the low eutectic bonding temperature ($363^{\circ}C$) of Au with Si, and the process was performed with a substrate that was pre-heated at a temperature of $450^{\circ}C$ during HWCVD. The nano-balls and structures showed various formations depending on the deposited metals and Si surface. Furthermore, the samples of Au nano-balls showed low reflectance due to surface plasmon and quantum confinement effects in a spectra range of short wavelength spectra range.

• 한국재료학회지
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• 제21권12호
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• pp.666-672
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• 2011

The a-Si:H/c-Si hetero-junction (HJ) solar cells have a variety of advantages in efficiency and fabrication processes. It has already demonstrated about 23% in R&D scale and more than 20% in commercial production. In order to further reduce the fabrication cost of HJ solar cells, fabrication processes should be simplified more than conventional methods which accompany separate processes of front and rear sides of the cells. In this study, we propose a simultaneous deposition of intrinsic thin a-Si:H layers on both sides of a wafer by dual hot wire CVD (HWVCD). In this system, wafers are located between tantalum wires, and a-Si:H layers are simultaneously deposited on both sides of the wafer. By using this scheme, we can reduce the process steps and time and improve the efficiency of HJ solar cells by removing surface contamination of the wafers. We achieved about 16% efficiency in HJ solar cells incorporating intrinsic a-Si:H buffers by dual HWCVD and p/n layers by PECVD.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1598-1600
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• 2003

Microcrystalline silicon(c-Si:H) thin-film solar cells are prepared with intrinsic Si-layer by hot wire CVD. The operating parameters of solar cells are strongly affected by the filament temperature ($T_f$) during intrinsic layer. Jsc and efficiency abruptly decreases with elevated $T_f$ to $1400^{\circ}C$. This deterioration of solar cell parameters are resulted from increase of crystalline volume fraction and corresponding defect density at high $T_f$ The heater temperature ($T_h$) are also critical parameter that controls device operations. Solar cells prepared at low $T_h$ (<$200^{\circ}C$) shows a similar operating properties with devices prepared at high $T_f$, i.e. low Jsc, Voc and efficiency. The origins for this result, however, are different with that of inferior device performances at high $T_f$. In addition the phase transition of the silicon films occurs at different silane concentration (SC) by varying filament temperature, by which highest efficiency with SC vanes with $T_f$.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2005년도 제17회 워크샵 및 추계학술대회
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• pp.561-566
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• 2005

Polycrystalline silicon films were deposited using hot wire CVD (HWCVD). The deposition of silicon thin films was approached by the theory of charged clusters (TCC). The TCC states that thin films grow by self-assembly of charged clusters or nanoparticles that have nucleated in the gas phase during the normal thin film process. Negatively charged clusters of a few nanometer in size were captured on a transmission electron microscopy (TEM) grid and observed by TEM. The negatively charged clusters are believed to have been generated by ion-induced nucleation on negative ions, which are produced by negative surface ionization on a tungsten hot wire. The electric current on the substrate carried by the negatively charged clusters during deposition was measured to be approximately $-2{\mu}A/cm^2$. Silicon thin films were deposited at different $SiH_4$ and $H_2$ gas mixtures and filament temperatures. The crystalline volume fraction, grain size and the growth rate of the films were measured by Raman spectroscopy, X-ray diffraction and scanning electron microscopy. The deposit ion behavior of the si1icon thin films was related to properties of the charged clusters, which were in turn controlled by the process conditions. In order to verify the effect of the charged clusters on the growth behavior, three different electric biases of -200 V, 0 V and +25 V were applied to the substrate during the process, The deposition rate at an applied bias of +25 V was greater than that at 0 V and -200 V, which means that the si1icon film deposition was the result of the deposit ion of charged clusters generated in the gas phase. The working pressures had a large effect on the growth rate dependency on the bias appled to the substrate, which indicates that pressure affects the charging ratio of neutral to negatively charged clusters. These results suggest that polycrystalline silicon thin films with high crystalline volume fraction and large grain size can be produced by control1ing the behavior of the charged clusters generated in the gas phase of a normal HWCVD reactor.

• 방사성폐기물학회지
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• 제2권3호
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• pp.189-199
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• 2004

기계식 마스터-슬레이브 매니퓰레이터의 결점인 접근 지역의 제한을 극복하기 위해 차세대관리 공정장치 원격 유지보수용 천정이동 서보 매니퓰레이터(Bridge Transported Servo Manipulator, BTSM) 시스템을 개발하고 있다. 서보 매니퓰레이터는 핫셀 내 천정이동 브릿지(bridge)에 부착되는 슬레이브 매니퓰레이터와 핫셀 밖 운전지 역에 설치되는 마스터 매니퓰레이터로 구성된다. 각각의 매니퓰레이터는 몸체 회전, 상부 팔 틸트(tilt), 하부 팔 틸트, 하부 팔 회전, 손목 팬/틸트(pan & tilt) 및 잡는 운동(grasp motion)의 7 자유도를 갖는다. 하부 팔 회전, 손목 팬/틸트 및 잡는 운동은 매니퓰레이터의 무게에 비해 취급 용량을 크게 하고, 마찰을 작게 하기 위하여 와이어 구동 메카니즘을 채택하였다. 그러나, 와이어 구동 메카니즘은 한 축이 움직일 때 다른 축도 영향을 받을 수 있는 단점이 있다. 본 논문에서는 이와 같은 단점을 극복하기 위해 와이어 구동 링크(link) 사이의 전달 특성을 수식화 하였다. 와이어구동 링크들간의 전달특성 분석 및 실험을 통해서 이들의 기대하지 않은 동작 특성을 확인하였다. 또한, 제안한 보상식을 통해서 기대하지 않은 동작을 크게 줄일 수 있음을 확인하였다.

• 유체기계공업학회:학술대회논문집
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• 유체기계공업학회 2006년 제4회 한국유체공학학술대회 논문집
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• pp.187-190
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• 2006

In the present study, effects of tree-stream turbulence and surface trip wire on the flow past a sphere at $Re\;=\;0.4\;{\times}\;10^5\;{\sim}\;2.8\;{\times}\;10^5$ are investigated through wind tunnel experiments. Various types of grids are installed upstream of the sphere in order to change the tree-stream turbulence intensity. In the case of surface trip wire, 0.5mm and 2mm trip wires are attached from $20^{\circ}\;{\sim}\;90^{\circ}$ at $10^{\circ}$ interval along the streamwise direction. To investigate the flow around a sphere, drag measurement using a load cell, surface-pressure measurement, surface visualization using oil-flow pattern and near-wall velocity measurement using an I-type hot-wire probe are conducted. In the variation of free-stream turbulence, the critical Reynolds number decreases and drag crisis occurs earlier with increasing turbulence intensity. With increasing Reynolds number, the laminar separation point moves downstream, but the reattachment point after laminar separation and the main separation point are fixed, resulting in constant drag coefficient at each free-stream turbulence intensity. At the supercritical regime, as Reynolds number is further increased, the separation bubble is regressed but the reattachment and the main separation points are fixed. In the case of surface trip wire directly disturbing the boundary layer flow, the critical Reynolds number decreases further with trip wire located more downstream. However, the drag coefficient after drag crisis remains constant irrespective of the trip location.

• Journal of Mechanical Science and Technology
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• 제15권12호
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• pp.1860-1868
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• 2001

An experimental investigation was carried out to clarify unsteady flow fields with rotating stall cell, especially behavior of stall cell, in a high specific-speed diagonal flow fan. As its specific-speed is vary high for a diagonal flow fan, its pressure-flow rate curve tends to indicate unstable characteristics caused by rotating stall similar to axial flow fan. Although for an axial flow fan many researchers have investigated such the flow field, for a diagonal flow fan tittle study has been done. In this study, velocity fields at rotor Inlet in a high specific-speed diagonal flow fan were measured by use of a single slant hot-wire probe. These data were processed by using the "Double Phase-Locked Averaging"(DPLA) technique, i. e. phases of both the rotor blade and the stall cell were taken into account. The behaviors of stall cell at rotor inlet were visualized for the meridional, tangential and radial velocity.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.370-370
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• 2009

이종접합태양전지는 구조적 대칭성 때문에 웨이퍼 두께가 감소하여도 보우잉이 일어나지 않는 특징이 있으며, 산요에서 개발한 이종접합태양전지의 효율이 22% 이상을 보이고 있다. 이종접합태양전지에서 비정질 실리콘과 실리콘 웨이퍼의 계면에 따라 이종접합태양전지의 특성이 크게 변화한다. 본 연구에서는 패시베이션 층으로 사용되는 비정질 실리콘을 hot wire chemical vapor deposition(HWCVD)을 사용하여 이종접합태양전지에 적용하였으며 기존의 plasma-enhanced chemical vapor deposition을 이용한 비정질 실리콘을 적용한 이종접합태양전지와 비교하였다. 패시베이션 특성을 확인하기 위해 quasi-steady state photoconductance로 minority carrier lifetime을 측정하였고, 태양전지 특성평가로는 암전류특성 및 광전류특성을 사용하였다. HWCVD를 사용하여 패시베이션한 태양전지의 경우 16.1%의 효율을 보였다.