• 제목/요약/키워드: Hot electron

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Development of Continuous Galvanization-compatible Martensitic Steel

  • Gong, Y.F.;Song, T.J.;Kim, Han S.;Kwak, J.H.;De Cooman, B.C.
    • Corrosion Science and Technology
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    • v.11 no.1
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    • pp.1-8
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    • 2012
  • The development of martensitic grades which can be processed in continuous galvanizing lines requires the reduction of the oxides formed on the steel during the hot dip process. This reduction mechanism was investigated in detail by means of High Resolution Transmission Electron Microscopy (HR-TEM) of cross-sectional samples. Annealing of a martensitic steel in a 10% $H_2+N_2$ atmosphere with the dew point of $-35^{\circ}C$ resulted in the formation of a thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film and amorphous $_{a-X}MnO.SiO_{2}$ oxide particles on the surface. During the hot dip galvanizing in Zn-0.13%Al, the thin $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was reduced by the Al. The $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides however remained embedded in the Zn coating close to the steel/coating interface. No $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formation was observed. During hot dip galvanizing in Zn-0.20%Al, the $_{C-X}MnO.SiO_{2}$ (x>1) oxide film was also reduced and the amorphous $_{a-X}MnO.SiO_{2}$ and $a-SiO_{2}$ particles were embedded in the $Fe_{2}Al_{5-X}Zn_{X}$ inhibition layer formed at the steel/coating interface during hot dipping. The results clearly show that Al in the liquid Zn bath can reduce the crystalline $_{C-X}MnO.SiO_{2}$ (x>1) oxides but not the amorphous $_{a-X}MnO.SiO_{2}$ (x<0.9) and $a-SiO_{2}$ oxides. These oxides remain embedded in the Zn layer or in the inhibition layer, making it possible to apply a Zn or Zn-alloy coating on martensitic steel by hot dipping. The hot dipping process was also found to deteriorate the mechanical properties, independently of the Zn bath composition.

A Study on Dobe Distribution at the Junction of $^{60}CO\;\gamma-Ray$ and Elecron Beam in Postoperative Radiotherapy of Breast Cancer (유암수술후 방사선치료시 $^{60}Co\;\gamma$선과 전자선 조사야 접합부 선량분포에 관한 연구)

  • Kang, Wee-Saing;Huh, Seung-Jae;Ha, Sung-Whan
    • Radiation Oncology Journal
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    • v.2 no.1
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    • pp.149-153
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    • 1984
  • Postoperative radiotherapy of breast cancer makes it possible to reduce loco-regional recurrence of breast cancer. The treatment technique, which can reduce the low-dose region at the junction and lung, is required. To produce proper dose distribution of internal mammary chain and chest wall, authors tried to find the method to expose $^{60}Co\;\gamma-ray$ on internal mammary region and 7MeV electron on chest wall. Exposure time of $^{60}Co\;\gamma$ and monitor unit of 9MeV were selected so that dose of $^{60}Co$ at 4cm depth was the same as that of 7Mev electron at $80\%$ dose depth. The position and direction of electron beam were changed for $^{60}Co$ beam: $0^{\circ},\;5^{\circ}$ for 0cm seperation; $0^{\circ},\;5^{\circ},\;10^{\circ}$ for 0.5cm seperation; $5^{\circ},\;10^{\circ},\;15^{\circ}$ for 1cm seperation. The results are as followings. 1. When the seperation of two fields was increased, dose on the axis of $^{60}Co$ beam was increased and dose at the junction region decreased while the volume of lung to be exposed to high dose and hot spot size were irregularly changed. 2. The dose distribution in the target volume of internal mammary and chest wall was most ideal when the seperation of two fields was $0\~0.5cm$ and the direction of electron beam was parallel to $^{60}Co$ beam.

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Material Characteristics of Ti-6Al-4V Alloy Manufactured by Electron Beam Melting for Orthopedic Implants (전자빔 용해 방법으로 제조된 정형외과 임플란트용 Ti-6Al-4V 합금의 재료 특성 분석)

  • Gang, Gwan-Su;Jeong, Yong-Hun;Jang, Tae-Gon;Yang, Jae-Ung;Jeong, Jae-Yeong;Park, Gwang-Min;U, Su-Heon;Park, Tae-Hyeon
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.25-25
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    • 2018
  • Electron beam melting (EBM) is one of powder based additive manufacturing technology used to produce parts for high geometrical complexity and directly with three-dimensional computer aided design (CAD) model. It is kind of the most promising methods with additive manufacturing for a wide range of medical applications, such as orthopedic, dental implant, and etc. This research has been investigated the microstructure and mechanical properties of as fabricated and hot iso-static pressing (HIP) processed specimens, which are made by an Arcam A1 EBM system. The Ti-6Al-4V titanium alloy powder was used as a material for the 3 dimensional printing specimens. Mechanical properties were conducted with EBM manufacturing and computer numerical control (CNC) machining specimens, respectively. Surface morphological analysis was conducted by scanning electron microscopy (SEM) for their surface, dissected plan, and fractured surface after tensile test. The mechanical properties were included tensile stress-strain and nano-indentation test as a analysis level between nano and macro. As following highlighted results, the stress-strain curves on elastic region were almost similar between as fabricated and HIP processed while the ductile (plastic deformed region) properties were higher with HIP than that of as fabricated processed.

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Hot-Carrier Degradation of NMOSFET (NMOSFET의 Hot-Carrier 열화현상)

  • Baek, Jong-Mu;Kim, Young-Choon;Cho, Moon-Taek
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.10 no.12
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    • pp.3626-3631
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    • 2009
  • This study has provided some of the first experimental results of NMOSFET hot-carrier degradation for the analog circuit application. After hot-carrier stress under the whole range of gate voltage, the degradation of NMOSFET characteristics is measured in saturation region. In addition to interface states, the evidences of hole and electron traps are found near drain depending on the biased gate voltage, which is believed to the cause for the variation of the transconductance($g_m$) and the output conductance($g_{ds}$). And it is found that hole trap is a dominant mechanism of device degradation in a low-gate voltage saturation region, The parameter degradation is sensitive to the channel length of devices. As the channel length is shortened, the influence of hole trap on the channel conductance is increased. Because the magnitude of $g_m$ and $g_{ds}$ are increased or decreased depending on analog operation conditions and analog device structures, careful transistor design including the level of the biased gate voltage and the channel length is therefore required for optimal voltage gain ($A_V=g_m/g_{ds}$) in analog circuit.

Antioxidant Activities of Extracts from Fermented Black Jujube (발효 흑대추 추출물의 항산화 효과)

  • Hong, Ju-Yeon;Nam, Hak-Sik;Yoon, Kyung Young;Shin, Seung-Ryeul
    • Food Science and Preservation
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    • v.19 no.6
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    • pp.901-908
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    • 2012
  • This study was conducted to analyze the antioxidant activities of fermented black jujube and to compare these with those of dried jujube, for the development of functional materials. The antioxidative activities of dried jujube and fermented black jujube extracts were analyzed by electron-donating ability (EDA) using 1,1-diphenyl-2-picryl hydrazyl (DPPH), superoxide-dismutase-(SOD)-like activity by pyrogallol, nitrite-scavenging ability, and xanthin oxidase. The yield of the fermented black jujube extracts was higher than that of the dried jujube extracts, and that of the ethanol extracts was higher than that of the hot-water extracts. The total phenol contents of the hot-water extracts from fermented black jujube were higher. The EDA values of the hot-water and ethanol extracts from fermented black jujube and dried jujube increased with an increase in extract concentration, and were about 85% in a $1000{\mu}g/mL$ extract concentration. The SOD-like activity increased with an increase in extract concentration. The SOD-like activity of the hot-water extract from fermented black jujube was higher than that of the other extracts. The nitrite-scavenging ability at pH 1.2 of the hot-water extracts from dried jujube was higher than that of the other extracts. The xanthine oxidase inhibitory activities of the hot-water and ethanol extracts from fermented black jujube were higher than those of the other extracts, and increased along with the concentrations of the extracts.

Effective Thermal Conductivities $Al_2O_3$ Nanoparticles Suspended in Water with Low Concentration (1%미만의 부피비를 가지는 알루미나 나노유체의 유효 열전도도)

  • Lee, Byeong-Ho;Kim, Jun-Ho;Kong, Yu-Chan;Jang, Seok-Pil;Koo, Ja-Ye
    • Proceedings of the KSME Conference
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    • 2007.05b
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    • pp.2177-2181
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    • 2007
  • In this paper, effective thermal conductivities of water-based $Al_2O_3$-nanofluids with low concentration from 0.01 vol. % to 0.3 vol. % are experimentally obtained by transient hot wire method (THWM). The water-based $Al_2O_3$-nanofluids are manufactured by two-step method which is widely used. To examine suspension and dispersion characteristics of the water-based $Al_2O_3$-nanofluids, Zeta potential as well as transmission electron micrograph (TEM) is observed. We confirm the manufactured $Al_2O_3$-nanofluids have good suspension and dispersion. The effective thermal conductivities of the water-based $Al_2O_3$-nanofluids with low concentration are enhanced up to 1.64% compared with that of DI water at $21^{\circ}C$. In addition, experimental results are compared with theoretical results from Jang and Choi model.

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Microstructure Evolution of 15Cr ODS Steel by a Simple Torsion Test (단순 전단변형에 의한 15Cr 산화물 분산강화 강의 미세조직 변화)

  • Jin, Hyun Ju;Kang, Suk Hoon;Kim, Tae Kyu
    • Journal of Powder Materials
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    • v.21 no.4
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    • pp.271-276
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    • 2014
  • 15Cr-1Mo base oxide dispersion strengthened (ODS) steel which is considered to be as a promising candidate for high- temperature components in nuclear fusion and fission systems because of its excellent high temperature strength, corrosion and radiation resistance was fabricated by using mechanical alloying, hot isostatic pressing and hot rolling. Torsion tests were performed at room temperature, leading to two different shear strain routes in the forward and reverse directions. In this study, microstructure evolution of the ODS steel during simple shearing was investigated. Fine grained microstructure and a cell structure of dislocation with low angle boundaries were characterized with shear strain in the shear deformed region by electron backscattered diffraction (EBSD). Grain refinement with shear strain resulted in an increase in hardness. After the forward-reverse torsion, the hardness value was measured to be higher than that of the forward torsion only with an identical shear strain amount, suggesting that new dislocation cell structures inside the grain were generated, thus resulting in a larger strengthening of the steel.

Electrostatic Charging and Substrate Seeding in Gas Phase Synthesis of Nanocrystalline Diamond Powder

  • Cho, Jung-Min;Lee, Hak-Joo;Choi, Heon-Jin;Lee, Wook-Seong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.418-418
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    • 2012
  • Synthesis of nanocrystalline diamond powder was investigated via a gas-to-particle scheme using the hot filament chemical vapor deposition. Effect of substrate surface seeding by nano diamond powder, and that of the electrical conductance of the substrate were studied. The substrate temperature, methane content in the precursor gas, filament-substrate distance and filament temperature were $670^{\circ}C$, 5% methane in hydrogen, 10 mm and $2400^{\circ}C$, respectively. The powder formation by gas-to-particle mechanism were greatly enhanced by the substrate seeding by the nano diamond powder. It was attributed to the removal of the electrostatic force between the substrate and the seeded nano diamond particle by the thermal electron shower from the hot filament, via the depolarization of the substrate surface or the attached diamond powder and subsequent levitation into the gas phase to serve as the gas-phase nucleation site. The powder formation was greatly favoured by the conducting substrate relative to the insulating substrate, which proved the actual effect of the electric static force in the powder formation.

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STABILITY OF THE TWO-TEMPERATURE ACCRETION DISK

  • PARK MYEONG-GU
    • Journal of The Korean Astronomical Society
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    • v.28 no.1
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    • pp.97-107
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    • 1995
  • The stability of the geometrically thin, two-temperature hot accretion disk is studied. The general criterion for thermal instability is derived from the linear local analyses, allowing for advective cooling and dynamics in the vertical direction. Specifically, classic unsaturated Comptonization disk is analysed in detail. We find five eigen-modes: (1) Heating mode grows in thermal time scale, $(5/3)({\alpha}{\omega})^{-1}$, where alpha is the viscosity parameter and w the Keplerian frequency. (2) Cooling mode decays in time scale, $(2/5)(T_e/T_i)({\alpha}{\omega})^{-1}$, where $T_e\;and\;T_i$ are the electron and ion temperatures, respectively. (3) Lightman-Eardley viscous mode decays in time scale, $(4/3)(\Lambda/H)^2({\alpha}{\omega})^{-1}$, where $\Lambda$ is the wavelength of the perturbation and H the unperturbed disk height. (4) Two vertically oscillating modes oscillate in Keplerian time scale, $(3/8)^{1/2}\omega^{-1}$ with growth rate $\propto\;(H/\Lambda)^2$. The inclusion of dynamics in the vertical direction does not affect the thermal instability, adding only the oscillatory modes which gradually grow for short wavelength modes. Also, the advective cooling is not strong enough to suppress the growth of heating modes, at least for geometrically thin disk. Non-linear development of the perturbation is followed for simple unsaturated Compton disk: depending on the initial proton temperature perturbation, the disk can evolve to decoupled state with hot protons and cool electrons, or to one-temperature state with very cool protons and electrons.

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Evaluation of crystallinity and defect on (100) ZnTe/GaAs grown by hot wall epitaxy

  • Kim, Beong-Ju
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.12 no.6
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    • pp.299-303
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    • 2002
  • The relationship of crystallinity between defects distribution with (100) ZnTe/GaAs using HWE growth was investigated by four crystal rocking curve (FCRC) and transmission electron microscopy (TEM). The thickness dependence of crystal quality in ZnTe epilayer was evaluated. The FWHM value shows a strong dependence on ZnTe epilayer thickness. For the films thinner than 6 ${\mu}{\textrm}{m}$, the FWHM value decreases very steeply as the thickness increases. For the films thicker than 6 ${\mu}{\textrm}{m}$, it becomes an almost constant value. At the thickness of 12 $\mu\textrm{m}$ with the smallest value of 66 arcsec. which is the best value so far reported on ZnTe epilayers was obtained. Investigation into the nature and behavior of dislocations with film thickness in (100) ZnTe/(100)GaAs heterostructures grown by Hot Wall Epitaxy (HWE). This film defects range from interface to 0.7 ${\mu}{\textrm}{m}$ thickness was high density, due to the large lattice mismatch and thermal expansion coefficients. The thickness of 0.7~1.8 ${\mu}{\textrm}{m}$ was exists low defect density. In the thicker range than 1.8 ${\mu}{\textrm}{m}$ thickness was measured hardly defects.