• Title/Summary/Keyword: Hot Channel

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A New Asymmetric SOI Device Structure for High Current Drivability and Suppression of Degradation in Source-Drain Breakdown Voltage (전류구동 능력 향상과 항복전압 감소를 줄이기 위한 새로운 비대칭 SOI 소자)

  • 이원석;송영두;정승주;고봉균;곽계달
    • Proceedings of the IEEK Conference
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    • 1999.06a
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    • pp.918-921
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    • 1999
  • The breakdown voltage in fully depleted SOI N-MOSFET’s have been studied over a wide range of film thicknesses, channel doping, and channel lengths. An asynmmetric Source/Drain SOI technology is proposed, which having the advantages of Normal LDD SOI(Silicon-On-Insulator) for breakdown voltage and gives a high drivability of LDD SOI without sacrificings hot carrier immunity The two-dimensional simulations have been used to investigate the breakdown behavior in these device. It is found that the breakdown voltage(BVds) is almost same with high current drivability as that in Normal LDD SOI device structure.

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The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, Sang-Jin;Yang, Joon-Young;Hwang, Kwang-Sik;Yang, Myoung-Su;Kang, In-Byeong
    • Journal of Information Display
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    • v.8 no.4
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    • pp.15-18
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    • 2007
  • In this paper, we investigated the SLS process to control grain boundary(GB) location in TFT channel region, and it has been found to be applicable for locating the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analysed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

Microstructural and Mechanical Characteristics of the ECAPed P/M 6061 Al Alloy (ECAP가공한 P/M 6061 Al 합금의 미세조직과 기계적 성질)

  • 장시영
    • Journal of Powder Materials
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    • v.9 no.1
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    • pp.43-49
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    • 2002
  • Microstructural and mechanical characteristics of P/M 6061 Al alloy subjected to equal channel angular pressing (ECAP) were investigated. The P/M 6061 Al alloy had an intial grain size of approximately $20\mutextrm{m}$. An equiaxed ultra-fine grained structure with the mean grain size of $~50 \mutextrm{m}$ was obtained by four repetitive ECAP at 473 K. The microhardness of P/M 6061 Al alloy was drastically increased from about 40 Hv to 80 Hv by two repetitive ECAP at 373 K. However, the microhardness decreased with increasing ECAP temperature. The tensile stength of as-hot-pressed P/M 6061 Al alloy before ECAP was 95 MPa, whereas it increased to both 248 MPa after two repetitive ECAP at 373 K and 130 MPa after four repetitive ECAP at 473 K. The tensile properties of the ECAPed sample were compared with those of commercial cast 6061-O and 6061-T4 Al alloys.

Effect of ECAP on Microstructure of SiCw/6061Al Composites Produced by Powder Metallurgy (분말야금공정으로 제조한 SiCw/6061Al 복합재료의 미세조직에 미치는 ECAP가공의 영향)

  • Chang, Si-Young
    • Journal of Powder Materials
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    • v.9 no.1
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    • pp.11-18
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    • 2002
  • The 6061 Al alloy based composites reinforced with 10 vol% SiC whiskers were prepared by powder metallurgy with the powders having the different sizes, i.e. < $30{\mu}m$ and > $30{\mu}m$ The composites were subjected to equal channel angular pressing (ECAP) at various conditions and the microstructural changes during ECAP were examined In the composites SiC whiskers were clustered and randomly aligned. The clusters were relatively well distributed in the composite with the smaller initial powder size. After ECAP, the clusters were aligned parallel to flow direction and became smaller. In addition, the shape of clusters was changed from irregular to round. The microstructure of the ECAPed samples were compared with those of the conventionally hot-extruded composites. The uniform microstructure and enhanced microhardness could be obtained by using the powders having the smaller size, decreasing ECAP temperature and repeating ECAP.

Numerical Simulation of Duct Flow about Shape and Arrangement of Inlet Guide Vane to Increase the Temperature Uniformity (전치 가이드 베인 배치 및 형상에 따른 보일러 입구 온도분포의 수치해석 연구)

  • Lee, Su-Yun;Shin, Seung-Won
    • Proceedings of the SAREK Conference
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    • 2008.06a
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    • pp.1172-1177
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    • 2008
  • Diverging channel from gas burner exit to the inlet section of Heat Recovery Steam Generator (HRSG) has been re-designed for 1 MW steam supply and power generation system. Three different test geometries have been chosen for the numerical simulation. The existing design for 300 kW HRSG system (CASE B) has been improved by geometry and position changes of inlet guide vanes along with gas velocity entrance angle at the diverging channel inlet (CASE C). Both cases has been compared with the case where hot combustion gas is directly injected without any guide vanes (CASE A). Improved design shows overall uniform velocity and temperature distribution compared to existing design.

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Experimental Investigation on the Performance of a Scroll Expander for an Organic Rankine Cycle (유기랭킨사이클(ORC)을 위한 주전열면 열교환기의 채널주름비에 따른 유동 및 열전달특성)

  • Sung, Min-Je;Ahn, Joon
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
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    • v.26 no.4
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    • pp.158-162
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    • 2014
  • A series of numerical simulation has been carried out to study thermo-hydraulic characteristics of a primary surface type heat exchanger, which is designed for the evaporator and condenser of a geothermal ORC. Working fluid is geothermal water at hot side and R-245fa, which is a refrigerant designed for ORC, at cold side. Amplitude ratio of the channel and Reynolds number are considered as design parameters. Nusselt number is presented for the Reynolds number ranging from 50 to 150 and compared to analytic solutions. The result shows that higher amplitude ratio channel gives better heat transfer performance within the range of investigation.

The Characterization of Poly-Si Thin Film Transistor Crystallized by a New Alignment SLS Process

  • Lee, S.J.;Yang, J.Y.;Hwang, K.S.;Yang, M.S.;Kang, I.B.
    • 한국정보디스플레이학회:학술대회논문집
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    • 2007.08a
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    • pp.16-19
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    • 2007
  • In this paper, we present work that has been carried out using the SLS process to control grain boundary(GB) location in TFT channel region and it is possible to locate the GB at the same location in the channel region of each TFT. We fabricated TFT by applying a new alignment SLS process and compared the TFT characteristics with a normal SLS method and the grain boundary location controlled SLS method. Also, we have analyzed degradation phenomena under hot carrier stress conditions for n-type LDD MOSFETs.

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Development Study of Mono-Propellant Micro Propulsion Using MEMS Technology

  • Dan, Yoichiro;Kishida, Masahiro;Ikuta, Tatsuya;Takahashi, Koji
    • Proceedings of the Korean Society of Propulsion Engineers Conference
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    • 2004.03a
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    • pp.597-600
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    • 2004
  • Fabrication technique and performance test of catalytic micro propulsion are treated based on MEMS technology. This propulsion is designed to use hydrogen peroxide as liquid mono-propellant for attitude control of pica-satellite. The propellant is fed into the micro reactor channel and decomposed into hot gas yielding controllable thrust by catalyst. In order to increase the efficiency of the reaction that depends on the contact area of propellant and catalyst, porous surface formation on the channel accompanied by platinum particle deposition has been performed using H$_2$PtCl$_{6}$ solution as a precursor. Several thrusters were fabricated in different concentration of H$_2$PtCl$_{6}$ solution to determine the best quantity of Pt particles. For the comparison of the performance of each thruster, the volume of oxygen generated by the decomposition of hydrogen peroxide and the thrust were measured.red.

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Modeling negative and positive temperature dependence of the gate leakage current in GaN high-electron mobility transistors

  • Mao, Ling-Feng
    • ETRI Journal
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    • v.44 no.3
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    • pp.504-511
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    • 2022
  • Monte Carlo simulations show that, as temperature increases, the average kinetic energy of channel electrons in a GaN transistor first decreases and then increases. According to the calculations, the relative energy change reaches 40%. This change leads to a reduced barrier height due to quantum coupling among the three-dimensional motions of channel electrons. Thus, an analysis and physical model of the gate leakage current that includes drift velocity is proposed. Numerical calculations show that the negative and positive temperature dependence of gate leakage currents decreases across the barrier as the field increases. They also demonstrate that source-drain voltage can have an effect of 1 to 2 orders of magnitude on the gate leakage current. The proposed model agrees well with the experimental results.

The Fabrication and Characterization of CODE MOSFET (CODE MOSFET 소자의 제작 및 특성)

  • 송재혁;김기홍;박영준;민홍식
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.6
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    • pp.895-900
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    • 1990
  • With the MOS device scailing down, the substrate concentration must increase in order to avoid punchthrough leakage current due to the DIBL(Drain Induced Barrier Lowering) effect. However the enhancement of the substrate concentration increases source, drain juntion capacitances and substrate current due to hot elelctron, degrading the speed characteristics and reliability of the MOS devices. In this paper, a new device, called CODE(Channel Only Dopant Enhancement) MOS, an its fabrication are proposed. By comparing the fabricated CODE MOSFET with the conventional device, the improvements on DIBL, substrate current and source, drain juntion capacitances are realized.

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