• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2014.10a
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• pp.769-772
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• 2014

The device reliability in amorphous InGaZnO under NBS(Negative Bias Stress) and hot carrier stress with different gate overlap has been characterized. Amorphous InGaZnO thin film transistor has been measured. and is channel $width=104{\mu}m$, $length=10{\mu}m$ with gate overlap $length=0,1,2,3{\mu}m$. The device reliability has been analyzed by I-V characteristics. From the experiment results, threshold voltage variation has been increased with increasing of the gate overlap length after hot carrier stress. Also, threshold voltage variation has been decreased and Hump Effect has been observed later with increasing of the gate overlap length after NBS.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.516-521
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• 2004

We applied a deuterium plasma treatment to the surface of polycrystalline silicon films using PECVD and observed the change with AFM, XRD, ET-IR, and SIMS measurement. A bias temperature stressing (BTS) test was carried out to evaluate the reliability of the thin-film transistors (TFT). TFTs with channel lengths as small as 2 ${\mu}m$ were electrically stressed fer up to 1000 sec at room temperature. From the parameter variation such as s-factor, leakage current and on/off ratio, we suggest that the deuterium plasma treatment suppress the hot carrier effect and improve the stability of TFTs.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.8
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• pp.63-71
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• 1993

To verify validity of the steady-state Nyquist theorem and the steady-state Nyquist theorem with hot carrier effects in semiconductor devices, we calculate thermal noise in n-i-n structures using both the steady-state Nyquist theorem and the Monte-Carlo method, and compare the results from these two-methods. When the carrier temperature is not far from the lattice temperature, the results from both methods agree with each other very well, but in the hot carrier regime there are some discrepancies. Our results support the argument that for MOSFETs and MESFETs operating in the linear region, the channel thermal noise should be explained by the steady-state Nyquist theorem rather than by the existing theories.

• KEPCO Journal on Electric Power and Energy
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• v.2 no.2
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• pp.223-225
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• 2016

The newly proposed analysis method using a direct-current current-voltage (DCIV) simulation is introduced for investigating leakage current composing MOS transistor. From comparing the density and location of traps using DCIV method and investigating the leakage current of gate channel transistor, we proposed the graphical analysis method to correlate the DCIV current and leakage mechanism by the traps. And, our graphical method intuitively explains that leakage current in MOS transistor is well correlated with the DCIV current of the MOS transistor arrays due to two kinds of traps created by Fowler-Nordheim (F-N) stress and Hot carrier stress, respectively.

• Proceedings of the SAREK Conference
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• 2007.11a
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• pp.197-202
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• 2007

In this study, the cooling characteristics of a liquid cooler using thermoelectric module was experimentally investigated. The experiment was conducted for various inner structures of liquid cooler (4 cases), hot fluid flow rates (0.15-0.25 L/min), number of T.E module (2, 4, 6 set), and the cooling water flow rates (200-600 cc/min) for both parallel and counter flow types. Among the results, better cooling performance geometry was selected. And experiment was also carried out to examine further enhancement of cooling performance by inserting coils (pitches: 0.2, 3, 6 mm) into the hot-fluid channel. Present results showed that the short serpentine type(case2) indicated the best cooling performance. In the case of coil pitch of 3 mm, the best cooling performance was shown, more than 10% increase of the inlet and outlet temperature difference, compared with the case of the cooler without coil. Consequently, the inserted coil pitch should be properly selected to improve cooling performance.

• Journal of KIISE:Databases
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• v.35 no.3
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• pp.272-285
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• 2008

In this paper, we concentrate on data allocation methods for multiple broadcast channels. When the server broadcasts data, the important issue is to let mobile clients access requested data rapidly. Previous works first sorted data by their access probabilities and allocate the sorted data to the multiple channels by partitioning them into multiple channels. However, they do not reflect the difference of access probabilities among data allocated in the same channel. This paper proposes ZGMD allocation method. ZGMD allocates data item on multiple channels so that the difference of access probability in the same channel is maximized. ZGMD allocates sorted data to each channels and applies Broadcast Disk in each channel. ZGMD requires a proper indexing scheme for the performance improvement. This is because in ZGMD method each channel got allocated both hot and cold data. As a result, the sequential search heuristic does not allow the mobile client to access hot data items quickly. The proposed index scheme is based on using dedicated index channels in order to search the data channel where the requested data is. We show that our method achieve the near-optimal performance in terms of the average access time and significantly outperforms the existing methods.

• Journal of the Korean Society of Propulsion Engineers
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• v.20 no.4
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• pp.94-103
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• 2016

A regeneratively-cooled channel in a liquid rocket engine is used to effectively cool a combustion chamber inner wall from hot combustion gas, and the heat transfer/pressure loss characteristics should be predicted in advance to design cooling channels. In the present research, five cooling channels with different geometric dimensions were designed and the channels were respectively manufactured using cutter and endmill. By changing coolant velocity and downstream pressure, the effects of manufacturing method, channel shape, and flow condition on pressure losses were experimentally investigated and the results were compared with the analytical results. At same channel shape and flow condition, the pressure loss in the channel machined by the cutter was lower than that by the endmill. It was also found that the pressure loss ratio between the experimental result and the analytical data changed with the channel shape and flow condition.

• Transactions on Electrical and Electronic Materials
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• v.16 no.2
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• pp.78-81
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• 2015

Pure ZnO and ZnO nanowires doped with 3 wt.% Ga (‘3GZO’) were grown by pulsed laser deposition in a furnace system. The doping of Ga in ZnO nanowires was analyzed by observing the optical and chemical properties of the doped nanowires. The diameter and length of nanowires were under 200 nm and several ${\mu}m$, respectively. Changes of significant resistance were observed and the sensitivities of ZnO and 3GZO nanowires were compared. The sensitivities of ZnO and 3GZO nanowire sensors measured at 300℃ for 1 ppm of ethanol gas were 97% and 48%, respectively.

• Proceedings of the KIEE Conference
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• 2000.07a
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• pp.461-463
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• 2000

As increasing the accident of distribution transformers, we need to manage them efficiently. This paper proposes the method for transformer's management using multi-channel wireless data communication. The Data Acquisition System(DAS) was developed to manage transformers and the HDLC protocol applied to the system. Additionally, it will be feasible to diagnose distribution transformers by checking load conditions such as hot spot temperature, ambient temperature, load current, etc. and using adequate algorithm.

• Proceedings of the KIEE Conference
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• 2001.07c
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• pp.1357-1359
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• 2001

0.2${\mu}m$ 이하의 최소 선폭을 가지는 소자를 구현할 때 drain induced barrier lowering (DIBL)이나 hot electron effect와 같은 short channel effect (SCE)가 나타나며 이로 인하여 소자의 신뢰성이 악화되기도 한다. 이를 개선하기 위한 방법 중 하나가 silicon selective epitaxial growth (SEG)를 이용한 elevated source/drain (ESD) 구조이다. 본 연 구에서는 silicon selective epitaxial growth를 이용하여 elevated source/drain 구조를 갖는 MOSFET 소자와 일반적인 MOSFET 구조를 갖는 소자와의 차이를 elevated source/drain의 높이 변화에 따른 전류 전압 특성을 이용하여 비교, 분석하였으며 그 결과 elevated source/drain 구조가 short channel effect를 감소시킴을 확인할 수 있었다.